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UNRF2A100A Panasonic Electronic Components TRANS NPN W/RES 35 HFE ML3-N2 visit Digikey Buy

BC338 hie hre hfe

Catalog Datasheet MFG & Type PDF Document Tags

transistors

Abstract: bc337 TRANSISTOR equivalent Emitter Base Emitter- Basis- hie 1 + h fe hic = hie Eingangsimpedanz hie × h oe - hre , voltage transfer ratio h12 hre Small signal current gain h21 hfe h fb = - Output , : B ­ Silicon Transistor C ­ LF Low Power Transistor nnn ­ Serial Number X or -nn ­ hFE Group B ­ Siliziumtransistor C ­ NF Kleinleistungstransistor nnn ­ Serien-Nummer X oder -nn ­ hFE Gruppe , / C BC860 A / B / C BC327 -16 / -25 / -40 BC328 -16 / -25 / -40 BC337 -16 / -25 / -40 BC338 -16
Diotec
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transistors bc337 TRANSISTOR equivalent BC337 hie hre hfe EQUIVALENT TRANSISTOR bc547 bc547 sot 23 transistor BC547 equivalent BC807 BC808 BC817 BC818 BC846 BC847

BC338 hie hre hfe

Abstract: BD371C-10 Vebo (V) Min Ices' â cBO@Vcb (nA) (V) Max Hfe hie @ 'C VCE 1 kHz* (mA) (V) Min Max +Z1 53. - (V) (mA , Hfe hfe @ lc VCE 1 kHz* (mA) (V) Min Max "TT, Ã"?. , ui 00 OnA) Max Min Max C0b
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BC338 hie hre hfe BD371C-10 bc368 hie BD370B-10 BF494 BD371D S01130 T-03-01

smd npn 2n2222

Abstract: bf471 800 25 BC337 BC337A BC338 n-p-n TO-92 var. 45 60 25 500 800 25 BC368 , CHARACTERISTICS hFE (hfe) (1 2 5 -5 0 0 ) (1 2 5 -9 0 0 ) (2 4 0 -9 0 0 ) at 'c mA 2 fT MHz , 45 25 200 350 25 SELECTION GUIDE CHARACTERISTICS h FE (hfe ) at 'c mA fT , ARACTERISTIC S h FE (hfe> (1 2 5 -7 0 0 ) at *C mA fT MHz typ. F dB typ. remarks , RATINGS at Tamb at ° C h FE (hfe> at fT MHz typ. 'c mA F dB typ. 2PA733
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smd npn 2n2222 bf471 tunnel diode BSR62 equivalent BF494 h parameters uhf amplifier design Transistor bf970 2PC1815L 2PC1815 7Z88986

t110 94v 0

Abstract: PTC SY 16P . . . . . . . . . . 11 Low Noise and Good hFE Linearity . . . . . . . . . . . . . . . 11 , . . . 8 General­Purpose Multiple Transistors . . . . . . . . 11 Low Noise and Good hFE Linearity . , BC338­25 MPS4124 ­ MPS5172 MPS6521 PNP MPSL51 ­ ­ ­ MPS8599 MPSA56 ­ MPS6729 ­ BC556B , 100 200 420 80 100 350 450 200 380 380 160 120 120 100 300 hFE fT Max dB Max , BC858BLT1 BC858CLT1 BC859BLT1 BC859CLT1 ­ ­ ­ NPN MPSW05 ­ PNP hFE fT NF Max
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t110 94v 0 PTC SY 16P philips diode PH 37m 2N2955T PT895 KP303E 201069F S-171 CH-5400

TRANSISTOR AH-16

Abstract: TRANSISTOR bH-16 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k , f = 1.0 kHz) 2N3903 2N3904 2N3903 2N3904 hre 2N3903 2N3904 hfe , General­Purpose Multiple Transistors . . . . . . . . . . . . 11 Low Noise and Good hFE Linearity . . . . . . . . . , Multiple Transistors . . . . . . . . 11 Low Noise and Good hFE Linearity . . . . . . . . . . . 11 , MPS2222A 2N4401 MPS6602 2N3904 BC548B BC548C ­ MPS2222 2N5088 2N5089 BC238B BC238C BC239C BC338­25 MPS4124 , hFE Min 40 50 120 50 100 100 60 50 120 180 60 160 100 100 250 120 120 200 120 120 200 380 100 100 160
ON Semiconductor
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TRANSISTOR AH-16 TRANSISTOR bH-16 transistor marking code SOT-23 2FX equivalent of transistor bc212 bc 214 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 DL126/D DL126

CBF493S

Abstract: BC337 hie hre hfe 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k , f = 1.0 kHz) 2N3903 2N3904 2N3903 2N3904 hre 2N3903 2N3904 hfe , General­Purpose Multiple Transistors . . . . . . . . . . . . 11 Low Noise and Good hFE Linearity . . . . . . . . . , Multiple Transistors . . . . . . . . 11 Low Noise and Good hFE Linearity . . . . . . . . . . . 11 , MPS2222A 2N4401 MPS6602 2N3904 BC548B BC548C ­ MPS2222 2N5088 2N5089 BC238B BC238C BC239C BC338­25 MPS4124 , hFE Min 40 50 120 50 100 100 60 50 120 180 60 160 100 100 250 120 120 200 120 120 200 380 100 100 160
ON Semiconductor
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CBF493S BC449 equivalent MECL 10000 marking 513 SOD-323 bc213 equivalent rvb ah

marking 513 SOD-323

Abstract: transistor marking code SOT-23 2FX ) BFY52 BFY51 2N2218 BSY53 2N2219 30 35 40 40 40 fT min (MHz) 2N4033 hFE m in/m ax , 2N3962 2N2484 BFY76 â  hfe @ 1 KHz â' If 10 SCS-THOMSON MKEWEILiMOSaKS â'" 3 2 4 , VCER* (V) hFE m in/m ax lc (mA) 30 40 50 60/150 60/150 60/150 100 100 100 , -18 TY PE gi VCEO VCER* hFE m in/m ax >c (mA) 150 180 180 180 180 40/â'" 30/â , VOLTAGE transisto rs in TO-39 TY PE i v CEO hFE m ln/m ax >c (mA) NPN 150 150 160
ON Semiconductor
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DTD113 BC548 hie hre hfe steel package BC449A equivalent MPSW45A replacement 2n4401 free transistor equivalent book BF256

BC350

Abstract: BSX19 equivalent hFE @ IC mA IC mA Max Min Max 10 10 10 10 10 10 50 10 10 10 10 10 10 10 , 2N4400 MPS6602 2N3903 2N3904 BC548 BC548A BC548B BC548C 2N4123 2N4124 BC338 MPS8599 MPSA56 , General­Purpose Transistors (continued) NPN PNP V(BR)CEO Volts Min fT @ IC hFE @ IC VCE(sat) @ , 50 50 50 Table 2. Plastic­Encapsulated Low­Noise and Good hFE Linearity These devices are designed to use on applications where good hFE linearity and low­noise characteristics are required
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BC350 BSX19 equivalent BC108 CROSS REFERENCE BFY40 SHORT DATA ON 2N744 BFW63 BC142 BC160 BC177 BC179 BC286 BC287

BC517 spice model

Abstract: bc547 spice model Figure (IC = ­100 mAdc, VCE = ­5.0 Vdc, RS = 1.0 k , f = 1.0 kHz) fT Cobo Cibo hie hre hfe hoe NF 250 - , = ­5.0 mAdc) hFE 60 80 100 60 30 VCE(sat) - - VBE(sat) ­0.65 - ­0.85 ­0.95 ­0.25 ­0.4 Vdc - - , IC/IB hFE/2 0.8 *qVC for VCE(sat) 0 25°C to 125°C ­ 55°C to 25°C VBE(sat) @ IC/IB = 10 0.6 VBE(on , VOLTAGE (VOLTS) Figure 13. Current­Gain - Bandwidth Product Figure 14. Capacitance 20 10 hie , CURRENT (mA) 50 100 MPS3906 hfe 200 @ IC = ­1.0 mA hoe, OUTPUT ADMITTANCE (m mhos) VCE = ­10 Vdc f = 1.0
Motorola
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BC517 spice model bc547 spice model bc548 spice model h1 m6c MPS6595 BF245 A spice PZT751T1 PZT2222AT1 PZT2907AT1 PZTA14T1 PZTA42T1 PZTA64T1

BC237

Abstract: 2N2904 PNP Transistor 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz) fT Cobo Cibo hie hre hfe hoe NF 300 - - 1.0 0.5 100 1.0 - - 4.0 , mAdc) hFE 40 70 100 60 30 VCE(sat) - - VBE(sat) 0.65 - 0.85 1.1 0.2 0.3 Vdc - - 300 - - Vdc - , ) 1.4 1.6 0.8 *APPLIES for IC/IB hFE/2 25°C to 125°C *qVC for VCE(sat) ­ 55°C to 25°C 0 ­ , . Current­Gain - Bandwidth Product Figure 16. Capacitance 20 hoe, OUTPUT ADMITTANCE (m mhos) hie , INPUT , (mA) 50 100 MPS3904 hfe 200 @ IC = 1.0 mA VCE = 10 Vdc f = 1.0 kHz TA = 25°C 200 100 70 50 30 20
ON Semiconductor
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BC237 2N2904 PNP Transistor 226AA MM3001 MM3725 MM4001 MMAD1106 MMBF4856LT1

BC237

Abstract: 2n2904 2n2905 ­10 mAdc, VCE = ­10 Vdc, f = 1.0 kHz) fT 150 Cobo - Cibo - hie - hre - hfe 100 hoe - 1.2 - mmhos , correspondingly­numbered curves on hfe and other "h" parameters for this series of transistors. To each graph. obtain these curves, a high­gain and a low­gain unit were 1000 700 500 hfe , CURRENT GAIN 300 200 hie , INPUT , Voltage (IC = ­50 mAdc, IB = ­2.5 mAdc) (IC = ­300 mAdc, IB = ­30 mAdc) hFE 80 100 100 20 VCE(sat) - -
ON Semiconductor
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2n2904 2n2905 K 2056 BC547 hie hre hfe hie for bc547b TO-226-AE MMBF4860LT1 MMBF5459LT1 MMBF5486LT1 MMBT8599LT1 MMBV2104LT1 MMPQ3799

BC547 hie hre hfe

Abstract: hie for bc547b Cobo Cibo hie 2.0 0.25 hre - - hfe 50 75 hoe 5.0 25 rbCc NF - - 35 200 150 4.0 ps dB 300 375 8.0 , mAdc, IB = 50 mAdc) hFE 35 50 75 35 100 50 40 VCE(sat) - - VBE(sat) 0.6 - 1.2 2.0 0.3 1.0 Vdc - - , defined as the frequency at which |hfe| extrapolates to unity. v v 2­790 Motorola Small­Signal , 1000 700 500 hFE , DC CURRENT GAIN 300 200 TJ = 125°C 25°C 100 70 50 30 20 10 0.1 ­55°C VCE = 1.0
ON Semiconductor
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sot-223 body marking A G Q E mps3638 MPS3638A MMSV3401T1 MPF970 MPF971 MPF3821 MPF3822

TRANSISTOR P2N2222A

Abstract: BC237 ) MPS2222 MPS2222A hie MPS2222A MPS2222A hre MPS2222A MPS2222A hfe MPS2222A MPS2222A hoe MPS2222A MPS2222A , Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) hFE 35 50 75 35 100 50 30 40 VCE(sat) MPS2222 , 300 ms, Duty Cycle 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. v , . Figure 1. Turn­On Time Figure 2. Turn­Off Time 1000 700 500 hFE , DC CURRENT GAIN 300 200 TJ =
ON Semiconductor
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TRANSISTOR P2N2222A bf422 transistor P2N2222A MPF4856 MPF4857 MPF4858 MPF4859 MPF4860

2N2222 MPS2222 npn transistor

Abstract: 2N2222 MPS2222 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k , f = 1.0 kHz) 2N3905 2N3906 hre 2N3905 2N3906 hfe 2N3905 2N3906 , ) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(1) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) hFE , 2N3905 2N3906 Cobo Cibo hie 0.5 2.0 8.0 12 X 10­ 4 200 250 - - - - 4.5 10.0 pF pF k MHz mmhos
ON Semiconductor
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2N2222 MPS2222 npn transistor 2N2222 MPS2222 DO204AA 2n3053 motorola mps2222a npn transistor mps2222 transistor MPF4861 MPQ6501 MPS3866 MPS4123 MPS4125 MPS4258

2N3906 MOTOROLA

Abstract: 2n3906 TRANSISTOR REPLACEMENT kHz) hFE 35 50 70 35 100 50 40 VCE(sat) - - VBE(sat) 0.6 - °hie° 2.0 0.25 hre - - hfe
ON Semiconductor
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2N3906 MOTOROLA 2n3906 TRANSISTOR REPLACEMENT 2n3906 REPLACEMENT 2N3905 Equivalent equivalent transistor 2N1711 applications of Transistor BC108 MPS5771 MPS6520 2N5551 2N5401 BAS16LT1 MMBF4391LT1

motorola p1f

Abstract: hie for bc547b (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) fT Cobo Cibo hie hre hfe hoe 100 - - 3.0 2.0 200 5.0 700 , mAdc) (IC = 100 mAdc, IB = 5.0 mAdc) Base ­ Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE 250
ON Semiconductor
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motorola p1f 619 sc-59 Marking P1F P1F marking transistor motorola 2n3053 MARKING CODE Zi sot363 PZT2222AT3 318E-04 MMBF5457LT1 2N5486 MMBT5551LT1 MMBV2103LT1
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