BC337 BC338 BC327 BC328 - Datasheet Archive

Vishay Semiconductors formerly General Semiconductor Small Signal Transistors (NPN) TO-226AA (TO-92) Features · NPN

BC337 BC337 and BC338 BC338 Vishay Semiconductors formerly General Semiconductor Small Signal Transistors (NPN) TO-226AA (TO-92) Features · NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suited for AF-driver stages and low power output stages. 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) · These types are also available subdivided into three groups -16, -25, and -40, according to their DC current gain. As complementary types, the PNP transistors BC327 BC327 and BC328 BC328 are recommended. · On special request, this transistor is also manufactured in the pin configuration TO-18. Mechanical Data Case: TO-92 Plastic Package max. 0.022 (0.55) Weight: approx. 0.18g 0.098 (2.5) Dimensions in inches and (millimeters) Packaging Codes/Options: E6/Bulk 5K per container, 20K/box E7/4K per Ammo mag., 20K/box Bottom View Maximum Ratings & Thermal Characteristics Parameter Ratings at 25°C ambient temperature unless otherwise specified. Symbol Value Unit Collector-Emitter Voltage BC337 BC337 BC338 BC338 VCES 50 30 V Collector-Emitter Voltage BC337 BC337 BC338 BC338 VCEO 45 25 V VEBO 5 V IC 800 mA ICM 1 A IB 100 Emitter-Base Voltage Collector Current Peak Collector Current Base Current Power Dissipation at Tamb = 25°C Thermal Resistance Junction to Ambient Air Ptot RJA mA (1) mW (1) °C/W 625 200 Junction Temperature Tj 150 °C Storage Temperature Range TS 65 to +150 °C Note: (1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. Document Number 88159 8-Mar-02 www.vishay.com 1 BC337 BC337 and BC338 BC338 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (TJ = 25°C unless otherwise noted) Parameter Symbol Current gain group DC Current Gain Min Typ Max VCE = 1 V, IC = 100 mA 100 160 250 160 250 400 250 400 630 VCE = 1 V, IC = 300 mA -16 -25 -40 Test Condition 60 100 170 130 200 320 - - - - - - - 2 2 - - 100 100 10 10 nA nA µA µA hFE Current gain group -16 -25 -40 Unit - Collector-Emitter Cutoff Current BC337 BC337 BC338 BC338 BC337 BC337 BC338 BC338 ICES VCE = 45 V VCE = 25 V VCE = 45 V, Tamb = 125°C VCE = 25 V, Tamb = 125°C Collector-Emitter BreakdownVoltage BC337 BC337 BC338 BC338 V(BR)CEO IC = 10 mA 45 20 - - - - V Collector-Emitter BreakdownVoltage BC337 BC337 BC338 BC338 V(BR)CES IC = 0.1 mA 50 30 - - - - V V(BR)EBO IE = 0.1 mA 5 - - V VCEsat IC = 500 mA, IB = 50 mA - - 0.7 V VBE VCE = 1 V, IC = 300 mA - - 1.2 V fT VCE = 5 V, IC = 10 mA f = 50 MHz - 100 - MHz CCBO VCB = 10 V, f = 1 MHz - 12 - pF Emitter-Base Breakdown Voltage Collector Saturation Voltage Base-Emitter Voltage Gain-Bandwidth Product Collector-Base Capacitance Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) www.vishay.com 2 Document Number 88159 8-Mar-02 BC337 BC337 and BC338 BC338 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Document Number 88159 8-Mar-02 www.vishay.com 3 BC337 BC337 and BC338 BC338 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) www.vishay.com 4 Document Number 88159 8-Mar-02