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BC337-40-AP Micro Commercial Components Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3 visit Digikey Buy
BC337-16-AP Micro Commercial Components Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3 visit Digikey Buy
BC337-25-AP Micro Commercial Components Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3 visit Digikey Buy
BC337-AP Micro Commercial Components TRANSISTOR NPN 800MA 45V TO-92 visit Digikey Buy

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BC337 Datasheet

Part Manufacturer Description PDF Type
BC337 Diotec Si-Epitaxial PlanarTransistors Original
BC337 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original
BC337 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
BC337 Fairchild Semiconductor Switching and Amplifier Applications Original
BC337 Fairchild Semiconductor NPN general purpose transistor Original
BC337 General Semiconductor General Purpose Bipolar Transistor, NPN, 45V, TO-92, 3-Pin Original
BC337 General Semiconductor Small Signal Transistors (NPN) Original
BC337 Korea Electronics TRANS GP BJT NPN 45V 0.8A 3TO-92 Original
BC337 NXP Semiconductors BC337 - 45 V, 500 mA NPN general-purpose transistors - Complement: BC327 ; fT min: 100 MHz; hFE max: 600 ; hFE min: 100 ; IC max: 500 mA; Polarity: NPN ; Ptot max: 625 mW; VCEO max: 45 V Original
BC337 On Semiconductor Amplifier Transistors NPN Silicon Original
BC337 On Semiconductor Amplifier Transistor NPN Original
BC337 On Semiconductor Amplifier Transistor NPN Original
BC337 Philips Semiconductors NPN general purpose transistor Original
BC337 Philips Semiconductors Small-signal Transistors Original
BC337 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original
BC337 Siemens NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Original
BC337 Siemens Cross Reference Guide 1998 Original
BC337 Sinyork Mini size of Discrete semiconductor elements Original
BC337 Various Russian Datasheets Transistor Original
BC337 Vishay Semiconductors Small Signal Transistors (NPN) Original
Showing first 20 results.

BC337

Catalog Datasheet MFG & Type PDF Document Tags

bc337 pin out diagram

Abstract: BC337 ://onsemi.com 3 BC337, BC337-16, BC337-25, BC337-40, BC338-25 ORDERING INFORMATION Device BC337 BC337RL1 BC337ZL1 BC337-16 BC337-16RL1 BC337-16ZL1 BC337-25 BC337-25RL1 BC337-25ZL1 BC337-25ZL1G BC337-40 BC337-40RL1 , BC337, BC337-16, BC337-25, BC337-40, BC338-25 Amplifier Transistors NPN Silicon http://onsemi.com , BC337, BC337-16, BC337-25, BC337-40, BC338-25 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise , 100 Figure 1. Thermal Response http://onsemi.com 2 BC337, BC337-16, BC337-25, BC337-40
ON Semiconductor
Original
bc337 pin out diagram BC337 figure BC337 pin out BC337 typical application BC-337-16 BC337/MGB20N36CL BC338 BC337/D

bc337

Abstract: bc337 fairchild Click on a product for detailed qualification data Product BC337 BC33716 BC33716BU BC33716TA BC33716TAR BC33716TF BC33716TFR BC33725 BC33725BU BC33725TA BC33725TAR BC33725TF BC33725TFR BC33740BU BC33740TA BC337ABU BC337BU BC337TF BC337TFR back to top © 2007 Fairchild Semiconductor Products | Design , : BC337 Line 3: -16 Line 1: BC337 Line 2: 16 Line 3: -&3 This page Print version BC33716 Full , BC33716TA Full Production $0.0296 TO-92 3 AMMO Line 1: BC337 Line 2: 16 Line 3: -&3
Fairchild Semiconductor
Original
bc337 fairchild BC337 NPN transistor BC337/338 BC327/BC328

BC337

Abstract: bc337 pin out diagram , BC337-25, BC337-40, BC338-25 ORDERING INFORMATION Device BC337 BC337G BC337RL1 BC337RL1G BC337ZL1 BC337ZL1G BC337-16 BC337-16G BC337-16RL1 BC337-16RL1G BC337-16ZL1 BC337-16ZL1G BC337-25 BC337-25G BC337-25RL1 BC337-25RL1G BC337-25ZL1 BC337-25ZL1G BC337-40 BC337-40G BC337-40RL1 BC337-40RL1G , BC337, BC337-16, BC337-25, BC337-40, BC338-25 Amplifier Transistors NPN Silicon http , , BC337-16, BC337-25, BC337-40, BC338-25 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted
ON Semiconductor
Original
BC33 7-25 BC33x bc33725g bc33825 BC33 equivalent for BC337

BC337

Abstract: BC337 figure BC337-16 hFE, 160 @ 100 mA BC337-16-BULK or BC337-16-TAP Bulk / Ammopack BC337-25 hFE, 250 @ 100 mA BC337-25-BULK or BC337-25-TAP Bulk / Ammopack BC337-40 hFE, 400 @ 100 mA BC337-40-BULK or BC337-40-TAP Bulk / Ammopack BC338-16 hFE, 130 @ 300 mA BC338-16-BULK or , Max DC current gain (current gain group - 16) Parameter VCE = 1 V, IC = 100 mA BC337-16 , BC337-25 hFE 160 250 400 DC current gain (current gain group - 40) VCE = 1 V, IC =
Vishay Semiconductors
Original
BC327 BC328 BC338-25-BULK CBC337 BC337 hfe cbc338 BC337 leads BC33825TA BC338-16-TAP BC338-25-TAP BC338-40

bc337-40 npn transistor

Abstract: BC337 gain BC337; BC338 BC337A BC337-16; BC338-16 BC337-25; BC338-25 BC337-40; BC338-40 DC current gain , decreases by about 2 mV/K with increasing temperature. M 8H721 BC337-16; BC338-16. Fig.2 DC current , plastic package. PNP complements: BC327, BC327A and BC328. PINNING PIN 1 2 3 BC337; BC337A; BC338 , voltage BC337 BC337A BC338 VCEO collector-emltter voltage BC337 BC337A BC338 !cm Pto, h FE MIN. MAX , collector current total power dissipation DC current gain BC337; BC338 BC337A transition frequency lc = 10
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OCR Scan
bc337-40 npn transistor BC337 pnp transistor TRANSISTOR BC337-25 PNP OF TRANSISTOR BC337 NPN TRANSISTOR BC337 40 transistor BC337-16 BC33S

BC337

Abstract: BC338-25 . Capacitances http://onsemi.com 286 BC337, BC337-16, BC337-25, BC337-40, BC338-25 ORDERING INFORMATION Device BC337 BC337RL1 BC337ZL1 BC337-16 BC337-16RL1 BC337-16ZL1 BC337-25 BC337-25RL1 BC337-25ZL1 BC337-25ZL1G BC337-40 BC337-40RL1 BC337-40ZL1 BC338-25ZL1 Package TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO , ://onsemi.com 283 BC337, BC337-16, BC337-25, BC337-40, BC338-25 Amplifier Transistors NPN Silicon , Order Number: BC337/D BC337, BC337-16, BC337-25, BC337-40, BC338-25 ELECTRICAL CHARACTERISTICS (TA
ON Semiconductor
Original
BC327-16 bc327-40 cbc327 BC327-25 BC327-40 BC327/D BRD8011/D

bc337 pin out diagram

Abstract: BC337 figure , BC337-16, BC337-25, BC337-40, BC338-25 ORDERING INFORMATION Device BC337 BC337RL1 BC337ZL1 BC337-16 BC337-16RL1 BC337-16ZL1 BC337-25 BC337-25RL1 BC337-25ZL1 BC337-40 BC337-40RL1 BC337-40ZL1 BC338 , BC337, BC337-16, BC337-25, BC337-40, BC338-25 Amplifier Transistors NPN Silicon http://onsemi.com , , BC337-16, BC337-25, BC337-40, BC338-25 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , Current Gain (IC = 100 mA, VCE = 1.0 V) hFE BC337 BC337-16 BC337-25/BC338-25 BC337-40 100 100 160 250 60
ON Semiconductor
Original

c33725

Abstract: c33740 SOT54A and SOT54 variant added Table 5 Marking codes for BC337, BC337-16, BC337-25 and BC337-40 added , -25; BC817-25W; BC337-25 160 - 400 BC817-40; BC817-40W; BC337-40 250 - 600 hFE DC , * BC817-16W 6A* BC817-25W 6B* BC817-40W 6C* BC337 C337 BC337-16 C33716 BC337-25 , 100 - 250 BC817-25; BC817-25W; BC337-25 160 - 400 BC817-40; BC817-40W; BC337-40 , _3 BC337_3 19990415 Product specification - 9397 750 05676 BC337_338_CNV_2 9397 750 14022
Philips Semiconductors
Original
c33725 c33740 C33740 NPN transistor transistor c33725 c33725 transistor BC337-40 C33740 BC817 BC817W BC807 SC-70 BC807W SC-43A

BC337

Abstract: TRANSISTOR BC337-25 BC337-16/BC338-16 BC337-25/BC338-25 BC337-40/BC338-40 100 100 160 250 60 630 250 400 630 , BC337/338 BC337,-16,-25,-40 TRANSISTOR (NPN) BC338, -16,-25,-40 FEATURES Power dissipation , Collector-base voltage BC337 50 V VCBO: BC338 30 V Operating and storage junction temperature range 2 , conditions MIN TYP MAX UNIT Ic= 100µA, IE=0 BC337 50 V BC338 30 V 45 V 25 V 5 V Collector-emitter breakdown voltage BC337 IC= 10 mA , IB=0 VCEO BC338
WEJ Electronic
Original
TRANSISTOR BC337-25 bc337 transistor datasheet BC337 NPN transistor datasheet TRANSISTOR bc337 BC337 equivalent bc337 transistor BC337/BC338 BC337-16/BC338-16 BC337-25/BC338-25 BC337-40/BC338-40 100MH

BC337 NATIONAL SEMICONDUCTOR

Abstract: BC338-25 NATIONAL SEMICONDUCTOR 300 mA hFE, 320 @ 300 mA Ordering code BC337-16-BULK or BC337-16-TAP BC337-25-BULK or BC337-25-TAP BC337-40-BULK or BC337-40-TAP BC338-16-BULK or BC338-16-TAP BC338-25-BULK or BC338-25-TAP BC338 , k per Ammopack 20 k/box Parts Table Part BC337-16 BC337-25 BC337-40 BC338-16 BC338-25 BC338 , °C VCE = 25 V, Tamb = 125 °C Collector - emitter breakdown voltage IC = 10 mA Part BC337-16 BC337-25 BC337-40 BC338-16 BC338-25 BC338-40 BC337 BC338 BC337 BC338 BC337 BC338 IC = 0.1 mA Emitter - base
Vishay Semiconductors
Original
BC337 NATIONAL SEMICONDUCTOR BC338-25 NATIONAL SEMICONDUCTOR BC338-16 NATIONAL SEMICONDUCTOR BC337 vishay bc3374 BC33840 BC338-40-BULK BC338-40-TAP 88/540/EEC 91/690/EEC D-74025

bc337

Abstract: cbc337 : BC337/D BC337, BC337­16, BC337­25, BC337­40, BC338­25 ELECTRICAL CHARACTERISTICS (TA = 25°C unless , (IC = 100 mA, VCE = 1.0 V) hFE BC337 BC337­16 BC337­25/BC338­25 BC337­40 VBE(on) VCE(sat) 100 100 160 , , BC337­16, BC337­25, BC337­40, BC338­25 1000 IC, COLLECTOR CURRENT (mA) 1.0 s 1.0 ms TJ = 135°C 100 µs , 12 ­55 to +150 BC338 25 30 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C BC337, BC337-16, BC337-25, BC337-40, BC338-25 1 2 3 CASE 29­04, STYLE 17 TO­92 (TO­226AA) THERMAL CHARACTERISTICS
ON Semiconductor
Original
BC-337

BC337

Abstract: BC338 Collector cut-off current BC337 BC338 Emitter cut-off current BC337/BC338 BC337-16/BC338-16 BC337-25/BC338-25 BC337-40/BC338-40 DC current gain Collector-emitter saturation voltage Base-emitter , www.haorm.cn BC337/BC338 TRANSISTOR (NPN) FEATURES Power dissipation TO-92 MAXIMUM RATINGS , Collector-Emitter Voltage VEBO 30 BC337 45 25 Emitter-Base Voltage IC 50 BC338 VCEO Collector-Base Voltage BC337 BC338 VCBO Units V 3. EMITTER 1 2 3 V 5 V Collector
HAROM
Original
BC338 TRANSISTOR TRANSISTOR BC338 transistor bc33740 TRANSISTOR bc337 40 TRANSISTOR BC337-40 transistor bc337 npn

BC337 pnp transistor

Abstract: TRANSISTOR BC337-25 PNP ; BC338 BC337A BC337-16; BC338-16 BC337-25; BC338-25 BC337-40; BC338-40 lc = 100 mA; VCE = 1 V; see Figs 2 , BC337-25; BC3378-25. Fig.3 DC current gain; typical values. 500 hFE 400 300 200 100-\- 10-1 ì 10 102 |c(mA) 103 BC337-40; BC338-40. Fig.4 DC current gain; typical values. MBH722 , BC337-16; BC338-16. Fig.2 DC current gain; typical values. 1997 Mar 10 4 Philips Semiconductors , Philips Semiconductors Product specification NPN general purpose transistors BC337; BC337A
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OCR Scan
TRANSISTOR BC337-40 PNP bc3378 BC337-25 PNP transistor MAR105 PNP TRANSISTOR bc338 BC337 sot54 MAM182 SC-43

BC337-25

Abstract: bc33725 BC337-25 BC337-40 ® SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Type BC337-25 s s BC337-25 BC337-40 s Marking BC337-40 SILICON EPITAXIAL PLANAR NPN TRANSISTORS TO , h FE DC Current Gain I C = 100 mA for BC337-25 for BC337-40 V (BR)CBO fT C CBO , V f = 1 MHz 400 600 100 MHz 5 pF BC337-25 / BC337-40 TO-92 MECHANICAL DATA , BC337-25 / BC337-40 Information furnished is believed to be accurate and reliable. However
STMicroelectronics
Original
BC337-40 t d BC337-40 TO92 bc337 40 bc337 25 st bc337

BC337

Abstract: BC337 MOTOROLA BC337/BC338 BC337­16/BC338­16 BC337­25/BC338­25 BC337­40/BC338­40 (IC = 300 mA, VCE = 1.0 V , MOTOROLA Order this document by BC337/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Collector ­ Emitter Voltage VCEO 45 , BC337 BC338 Vdc V(BR)CES BC337 BC338 Emitter ­ Base Breakdown Voltage (IE = 10 mA, IC = 0
Motorola
Original
BC337 MOTOROLA Motorola BC337

c33725 w 78

Abstract: c33725 transistor C337 BC337-16 C33716 BC337-25 C33725 BC337-40 C33740 [1] * = -: made in Hong , 100 - 250 BC817-25; BC817-25W; BC337-25 160 - 400 BC817-40; BC817-40W; BC337-40 [1] 100 BC817-16; BC817-16W; BC337-16 250 - 600 Pulse test: tp ≤ 300 μs; δ â , 250 BC817-25; BC817-25W; BC337-25 160 - 400 BC817-40; BC817-40W; BC337-40 IEBO , BC817W_SER_3 BC337_3 19990415 Product specification - BC337_338_CNV_2 BC817_BC817W_BC337
NXP Semiconductors
Original
c33725 w 78 transistor NPN c337 C33740 transistor C33725 W

BC337 figure

Abstract: bc337 ON Semiconductort BC337, BC337-16, BC337-25, BC337-40, BC338-25 Amplifier Transistors , Publication Order Number: BC337/D BC337, BC337­16, BC337­25, BC337­40, BC338­25 ELECTRICAL , Current Gain (IC = 100 mA, VCE = 1.0 V) hFE ­ BC337 BC337­16 BC337­25/BC338­25 BC337­40 , 100 BC337, BC337­16, BC337­25, BC337­40, BC338­25 1.0 s 1.0 ms 1000 TJ = 135°C 100 µs , ) Figure 7. Capacitances http://onsemi.com 3 100 BC337, BC337­16, BC337­25, BC337­40, BC338
ON Semiconductor
Original
Abstract: BC337 ICEO BC338 Emitter cut-off current DC current gain BC337/BC338 BC337-16/BC338-16 BC337-25/BC338-25 BC337-40/BC338-40 100 100 160 250 60 630 250 400 630 VCE= 5V, IC , JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337 , : Collector-base voltage BC337 50 V VCBO: BC338 30 V Operating and storage junction temperature range 1 2 , MAX UNIT Ic= 100µA, IE=0 BC337 50 V BC338 30 V 45 V 25 V 5 Jiangsu Changjiang Electronics Technology
Original

BC337

Abstract: BC337 NPN transistor CLASSIFICATION OF hFE Product-Rank BC337-16 1Collector 2Base 3Emitter J A BC337-25 D BC337-40 , BC337 / BC338 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant , -Mar-2011 Rev. B Symbol BC337 BC338 BC337 BC338 VCBO VCEO VEBO IC PD TJ, TSTG Ratings 50 30 , not be informed individually. Page 1 of 4 BC337 / BC338 NPN Plastic-Encapsulate Transistor , Collector to Base Breakdown BC337 Voltage BC338 Collector to Emitter Breakdown BC337 Voltage BC338
SeCoS
Original
NPN Transistor TO92 300ma OF TRANSISTOR BC338 NPN bc338

bc337 pin out diagram

Abstract: BC3377 BC337, BC337-25, BC337-40 Amplifier Transistors NPN Silicon http://onsemi.com Features · , section on page 4 of this data sheet. Publication Order Number: BC337/D BC337, BC337-25, BC337-40 , ON CHARACTERISTICS hFE DC Current Gain (IC = 100 mA, VCE = 1.0 V) - BC337 BC337-25 BC337-40 , 50 100 BC337, BC337-25, BC337-40 1.0 s 1.0 ms 1000 TJ = 135°C 100 ms hFE, DC , . Capacitances http://onsemi.com 3 100 BC337, BC337-25, BC337-40 ORDERING INFORMATION Marking
ON Semiconductor
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BC3377 BC337-xx BC337-

equivalent of transistor 8050

Abstract: 2SC734 equivalent BC337 / BC338 Vishay Semiconductors Small Signal Transistors (NPN) Features C 1 · NPN , BC337-16 hFE, 160 @ 100 mA BC337-16-BULK or BC337-16-TAP Bulk / Ammopack BC337-25 hFE, 250 @ 100 mA BC337-25-BULK or BC337-25-TAP Bulk / Ammopack BC337-40 hFE, 400 @ 100 mA BC337-40-BULK or BC337-40-TAP Bulk / Ammopack BC338-16 hFE, 130 @ 300 mA BC338-16-BULK or , Value Unit VCES 50 V BC338 VCES 30 V BC337 VCEO 45 V BC338
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2SC650 2SC711 2SC733 equivalent of transistor 8050 2SC734 equivalent Equivalent to transistor 2sc945 transistor 2SC710 transistor BC 337 transistor 2SC711 2SC621 2SC754 2SC950 2SC622 2SC755 2SC951

c33725

Abstract: c33740 BC337, BC337-16, BC337-25, BC337-40, BC338-25 Amplifier Transistors NPN Silicon http://onsemi.com , PD 625 5.0 PD 1.5 12 TJ, Tstg -55 to +150 BC337 45 50 5.0 800 BC338 25 30 Unit Vdc Vdc Vdc mAdc mW mW , Components Industries, LLC, 2004 1 April, 2004 - Rev. 3 Publication Order Number: BC337/D BC337, BC337-16, BC337-25, BC337-40, BC338-25 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , Current Gain (IC = 100 mA, VCE = 1.0 V) hFE BC337 BC337-16 BC337-25/BC338-25 BC337-40 100 100 160 250 60
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OCR Scan
Q62702-C313 Q62702-C313-V3 Q62702-C313-V1 Q62702-C313-V2 Q62702-C314 Q62702-C314-V1

c 337 25

Abstract: 337 marking code www.haorm.cn BC337/BC338 TRANSISTOR (NPN) FEATURES Power dissipation TO-92 MAXIMUM RATINGS , Collector-Emitter Voltage VEBO 30 BC337 45 25 Emitter-Base Voltage IC 50 BC338 VCEO Collector-Base Voltage BC337 BC338 VCBO Units V 3. EMITTER 1 2 3 V 5 V Collector , =25 unless otherwise specified) Parameter Collector-base breakdown voltage BC337 BC338 Collector-emitter breakdown voltage BC337 BC338 Emitter-base breakdown voltage Collector cut-off current BC337 BC338
Siemens
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c 337 25 337 marking code c 33740 337-40 338 marking code bc 337 equivalent Q62702-C314-V2 Q62702-C314-V3
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