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1 - 50 of about 244 for BC337 |
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First line: BC337 / 338 EPITAXIAL SILICON TRANSISTOR SWITCHING AMPLIFIER APPLICATIONS FEATURES Suitable AF-Driver stages power Abstract: .. UTC BC337/338 NPN EPITAXIAL SILICON TRANSISTOR. UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-039,B. SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES *Suitable for AF-Driver stages and low power .. datasheet abstract.. |
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First line: BC337 BC338 Small Signal Transistors NPN TO-226AA TO-92 min. Features Silicon Epitaxial Abstract: .. BC337 and BC338 Small Signal Transistors NPN Features • NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suited for AF-driver stages and low .. datasheet abstract.. |
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First line: BC337-25 BC337-40 SMALL SIGNAL TRANSISTORS PRELIMINARY DATA Type BC337-25 BC337-40 Marking BC337-25 Abstract: .. BC337-25 BC337-40. SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA. ■ SILICON EPITAXIAL PLANAR NPN. TRANSISTORS ■ TO-92 PACKAGE SUITABLE FOR. THROUGH-HOLE PCB ASSEMBLY ■ THE PNP COMPLEMENTARY TYPES .. datasheet abstract.. |
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First line: Semiconductort Amplifier Transistors Silicon MAXIMUM RATINGS Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Abstract: .. Amplifier Transistors NPN Silicon. MAXIMUM RATINGS. Rating Symbol BC337 BC338 Unit. Collector‐Emitter Voltage VCEO 45 25 Vdc. Collector‐Base Voltage VCBO 50 30 Vdc. Emitter‐Base Voltage VEBO 5 .. datasheet abstract.. |
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First line: BC337-25 BC337-40 SMALL SIGNAL TRANSISTORS PRELIMINARY DATA Ordering Code BC337-25 BC337-25-AP BC337-40 Abstract: .. BC337-25 BC337-40. SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA. ■ SILICON EPITAXIAL PLANAR NPN. TRANSISTORS ■ TO-92 PACKAGE SUITABLE FOR. THROUGH-HOLE PCB ASSEMBLY ■ THE PNP COMPLEMENTARY TYPES .. datasheet abstract.. |
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First line: BC337 BC337-16 BC337-25 BC337-40 BC338-25 Amplifier Transistors Silicon Features COLLECTOR BASE Abstract: .. BC337/D. BC337, BC337 16, BC337 25, BC337 40, BC338 25. Amplifier Transistors NPN Silicon. Features. • Pb Free Packages are Available* MAXIMUM RATINGS. Rating Symbol BC337 BC338 Unit. Collector .. datasheet abstract.. |
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First line: BC337..BC338 Silicon Epitaxial Planar Transistor switching amplifier applications These types subdivided into Abstract: .. Absolute Maximum Ratings Ta = 25 OC Parameter Symbol BC337 BC338 Unit. Collector Base Voltage VCBO 50 30 V. Collector Emitter Voltage VCEO 45 25 V. Emitter Base Voltage VEBO 5 V. Collector Current .. datasheet abstract.. |
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First line: BC337-16 BC337-25 Discrete POWER Signal Technologies BC337-16 BC337-25 TO-92 General Purpose Amplifier Abstract: .. BC337-16 / BC337-25. Discrete POWER & Signal Technologies. NPN General Purpose Amplifier. BC337-16 BC337-25. This device is designed for use as general purpose amplifiers and switches requiring .. datasheet abstract.. |
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First line: BC337 BC338 Small Signal Transistors NPN TO-92 min. FEATURES Silicon Epitaxial Planar Abstract: .. Collector-Emitter Voltage BC337. BC338. VCES VCES. 50 30. V V. Collector-Emitter Voltage BC337. BC338. VCEO VCEO. 45 25. V V. Emitter-Base Voltage VEBO 5 V. Collector Current IC 800 mA. Peak Collector Current .. datasheet abstract.. |
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First line: BC337 BC337-25 BC337-40 Amplifier Transistors Silicon Features Pb-Free Packages Available COLLECTOR Abstract: .. BC337/D. BC337, BC337 25, BC337 40. Amplifier Transistors NPN Silicon. Features. • Pb Free Packages are Available* MAXIMUM RATINGS. Rating Symbol Value Unit. Collector Emitter Voltage VCEO .. datasheet abstract.. |
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First line: BC337 BC338 Vishay Semiconductors formerly General Semiconductor Small Signal Transistors NPN TO-226AA Abstract: .. BC337 and BC338 Vishay Semiconductors formerly General Semiconductor. Document Number 88159 www.vishay.com. 8-Mar-02 1. Small Signal Transistors NPN 0.181 4.6 min. 0.492 12.5 0.181 4 .. datasheet abstract.. |
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First line: BC337 BC338 Vishay Semiconductors formerly General Semiconductor Small Signal Transistors NPN TO-226AA Abstract: .. BC337 and BC338 Vishay Semiconductors formerly General Semiconductor. Document Number 88159 www.vishay.com. 8-Mar-02 1. Small Signal Transistors NPN 0.181 4.6 min. 0.492 12.5 0.181 4 .. datasheet abstract.. |
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First line: BC337 BC338 Vishay Semiconductors Small Signal Transistors NPN Features Silicon Epitaxial Planar Abstract: .. BC337-16 hFE, 160 @ 100 mA BC337-16-BULK or BC337-16-TAP Bulk / Ammopack BC337-25 hFE, 250 @ 100 mA BC337-25-BULK or BC337-25-TAP Bulk / Ammopack BC337-40 hFE, 400 @ 100 mA BC337-40-BULK or .. datasheet abstract.. |
101.22 Kb |
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First line: BC337-xBK BC338-xBK BC337-xBK BC338-xBK Version 2009-05-05 Power dissipation Verlustleistung Plastic case Weight Abstract: .. BC337-xBK / BC338-xBK. BC337-xBK / BC338-xBK. NPN. General Purpose Si-Epitaxial Planar Transistors. Si-Epitaxial Planar-Transistoren für universellen Einsatz. NPN. Version 2009-05-05. Dimensions .. datasheet abstract.. |
91.04 Kb |
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First line: BC337 BC338 BC337 BC338 Version 2006-05-30 Power dissipation Verlustleistung General Purpose Si-Epitaxial Abstract: .. BC337 / BC338 NPN General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN Version 2006-05-30 Dimensions - Maße [mm] Power dissipation .. datasheet abstract.. |
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First line: BC337 / BC338 Elektronische Bauelemente FEATURES Power dissipation WTamb=25 Collector current Collector-base voltage V BR CBO Abstract: .. Any changing of specification will not be informed individual. BC337/BC338 NPN Plastic-Encapsulate Transistors. http://www.SeCoSGmbH.com. Elektronische Bauelemente. FEATURES. Power dissipation .. datasheet abstract.. |
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First line: BC337.. BC338 Silicon Epitaxial Planar Transistor switching amplifier applications. Especially suitable AF-driver Abstract: .. ST BC337.. BC338. NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are .. datasheet abstract.. |
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First line: BC337.. BC338 Silicon Epitaxial Planar Transistor switching amplifier applications. Especially suitable AF-driver Abstract: .. ST BC337.. BC338. NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are .. datasheet abstract.. |
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First line: BC337.. BC338 Silicon Epitaxial Planar Transistor switching amplifier applications. Especially suitable AF-driver Abstract: .. ST BC337.. BC338. NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are .. datasheet abstract.. |
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First line: BC337.. BC338 Silicon Epitaxial Planar Transistor switching amplifier applications. Especially suitable AF-driver Abstract: .. ST BC337.. BC338. NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are .. datasheet abstract.. |
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First line: BC337 / 338 EPITAXIAL SILICON TRANSISTOR SWITCHING AMPLIFIER APPLICATIONS Suitable AF-Driver stages power output Abstract: .. BC337/338 NPN EPITAXIAL SILICON TRANSISTOR. SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC328. ABSOLUTE MAXIMUM RATINGS .. datasheet abstract.. |
29.86 Kb |
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First line: BC817 BC817W BC337 general-purpose transistors Rev. January Product data sheet Product profile Abstract: .. BC817; BC817W; BC337 45 V, 500 mA NPN general-purpose transistors Rev. 05 — 21 January 2005 Product data sheet. Table 1: Product overview. Type number Package PNP complement. Philips JEITA. BC817 .. datasheet abstract.. |
157.63 Kb |
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First line: BC327 SERIES GENERAL PURPOSE TRANSISTORS VOLTAGE FEATURES General purpose amplifier applications epitaxial Abstract: .. DC Current Gain BC337-16. IC=-100mA,VCE =-1V BC337-25. BC337-40. IC=-300mA, VCE=-1V hFE. 100. 160. 250. 40. -. -. -. -. 250. 400. 630. -. -. Collector – Emitter Saturation Voltage IC=-500mA, IB=-50mA VCE .. datasheet abstract.. |
142.71 Kb |
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First line: Philips Semiconductors Small-signal Transistors LEADED DEVICES continued GENERAL PURPOSE LOW-POWER TRANSISTORS TYPE Abstract: .. BC327 TO-92 45 500 625 100 600 80 BC337 240. BC327A TO-92 60 500 625 100 400 80 BC337A 240. BC327-16 TO-92 45 500 625 100 250 80 BC337-16 240. BC327-25 TO-92 45 500 625 160 400 80 BC337-25 240. BC327-40 TO-92 .. datasheet abstract.. |
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First line: Philips Semiconductors Small-signal Transistors LEADED DEVICES GENERAL PURPOSE LOW-POWER TRANSISTORS TYPE NUMBER Abstract: .. BC337 TO-92 45 500 625 100 600 100 BC327 244. BC337A TO-92 60 500 625 100 400 100 BC327A 244. BC337-16 TO-92 45 500 625 100 250 100 BC327-16 244. BC337-25 TO-92 45 500 625 160 400 100 BC327-25 244. BC337-40 .. datasheet abstract.. |
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First line: BC337 / BC338 General Purpose Transistor Lead Pb -Free BASE COLLECTOR TO-92 EMITTER Maximum Ratings TA=25°C unless Abstract: .. BC337 BC338. ELECTRICAL CHARACTERISTICS Characteristics. WEITRON http://www.weitron.com.tw. OFF CHARACTERISTICS. ON CHARACTERISTICS. OFF CHARACTERISTICS. V. V. MHz. VCE sat VBE sat fT. 630 .. datasheet abstract.. |
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First line: Semiconductort Amplifier Transistors Silicon MAXIMUM RATINGS Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Abstract: .. Amplifier Transistors NPN Silicon. MAXIMUM RATINGS. Rating Symbol BC337 BC338 Unit. Collector‐Emitter Voltage VCEO 45 25 Vdc. Collector‐Base Voltage VCBO 50 30 Vdc. Emitter‐Base Voltage VEBO 5 .. datasheet abstract.. |
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First line: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors Order this document BC337 / D Silicon COLLECTOR Abstract: .. Rating Symbol BC337 BC338 Unit. Collector ‐ Emitter Voltage VCEO 45 25 Vdc. Collector ‐ Base Voltage VCBO 50 30 Vdc. Emitter ‐ Base Voltage VEBO 5.0 Vdc. Collector Current — Continuous IC 800 mAdc. Total .. datasheet abstract.. |
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First line: BC337 / 338 BC337 / 338 Switching Amplifier Applications Suitable AF-Driver stages power output stages Complement Abstract: .. ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002. BC337/338. NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted. Electrical Characteristics .. datasheet abstract.. |
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First line: BC337 / 338 BC337 / 338 Switching Amplifier Applications Suitable AF-Driver stages power output stages Complement Abstract: .. ©2000 Fairchild Semiconductor International Rev. A, February 2000. BC337/338. NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted. Electrical Characteristics .. datasheet abstract.. |
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First line: BC337-16 BC337-25 BC337-16 BC337-25 TO-92 General Purpose Amplifier This device designed general Abstract: .. BC337-16 / BC337-25. NPN General Purpose Amplifier. BC337-16 BC337-25. This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced .. datasheet abstract.. |
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First line: BC337 / 338 BC337 / 338 Switching Amplifier Applications Suitable AF-Driver stages power output stages Complement Abstract: .. ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001. BC337/338. NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted. Electrical Characteristics .. datasheet abstract.. |
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First line: DISCRETE SEMICONDUCTORS DATA SHEET book halfpage M3D186 BC337 general purpose transistor Product Abstract: .. BC337 NPN general purpose transistor book, halfpage M3D186 1999 Apr 15 2 Philips Semiconductors Product specification NPN general purpose transistor BC337 FEATURES • High current .. datasheet abstract.. |
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First line: DISCRETE SEMICONDUCTORS DATA SHEET book halfpage M3D186 BC337 BC337A BC338 general purpose Abstract: .. BC337; BC337A; BC338 NPN general purpose transistors book, halfpage M3D186 1997 Mar 10 2 Philips Semiconductors Product specification NPN general purpose transistors BC337; BC337A .. datasheet abstract.. |
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First line: Small-Signal Bipolar Transistors Package Thru-hole TO-92 VCEO 4 Volt TO-92 Surface Mount SOT-23 Abstract: .. BC337-16 BC327-16 800 100 160 250 1V / 300mA BC337-25 BC327-25 800 160 250 400 1V / 300mA BC337-40 BC327-40 800 250 400 630 1V / 300mA BCW66G BCW68G 800 160 400 1V / 100mA BCW69 100 120 260 5V / 2mA .. datasheet abstract.. |
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First line: Philips Semiconductors Small-signal Transistors Diodes PHILIPS TRANSISTORS CROSS REFERENCE COMPETITOR TYPE NUMBER Abstract: .. BC337-16 BC337-16 BC337-25 BC337-25 BC337-40 BC337-40 BC338 BC337 BC338-16 BC337-16 BC338-25 BC337-25 BC338-40 BC337-40 BC368 BC368 BC369 BC369 BC373 BC618 BC489A MPSA06 BC490A .. datasheet abstract.. |
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First line: STEVAL-IHT002V1 SCHEMATIC +VDD 100nF +VDD ST7ULTRALITE Abstract: .. Q1 BC337. LINE. R13 100K. R12 100K 1% L1 6.8uH. +VDD. * R1 47 1W. TR1 ACST67S. C6 47nF 275~ X2. 1 2. 3. J3 CON3 .. datasheet abstract.. |
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First line: Small Signal Transistors Reference Guide response continuous market demand enlarging product portfolio Abstract: .. 2SB709AR BC857B 2 2SC1213 BC337-25 1 2SC1573A BF420. 2SC1623 BC847B. 2SC1815 2N3904 1 2SC2411K SO2222A. 2SC2412K BC847B 2 2SC4081 BC847BW. 2SC4097 SO2222AW. 2SC4617 BC847BW 2 2SC945 .. datasheet abstract.. |
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First line: Continental Device India Limited ISO / TS Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC327 / A Abstract: .. SILICON PLANAR EPITAXIAL TRANSISTORS BC327/A BC328 PNP. BC337/A BC338 NPN. TO-92 Plastic Package. General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier .. datasheet abstract.. |
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First line: Philips Semiconductors Small-signal Transistors Replacement list DISCONTINUED TYPE 2N1613 2N1711 2N1893 2N2219 Abstract: .. BC337A BC337 equivalent type. BC338 BC337. BC338-16 BC337-16. BC338-25 BC337-25. BC338-40 BC337-40. BC368-16 BC635-16. BC368-25 BC635-16 equivalent type. BC547A BC546A. BC548 BC547. BC548A BC546A .. datasheet abstract.. |
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First line: Continental Device India Limited IS / ISO IECQ Certified Manufacturer IS / ISO QSC / L- SILICON PLANAR Abstract: .. SILICON PLANAR EPITAXIAL TRANSISTORS BC337. BC337A BC338. TO-92 Plastic Package. Complementary Transistors For Use in Driver And Output Stages of Audio Amplifiers. ABSOLUTE MAXIMUM RATINGS Ta .. datasheet abstract.. |
150.26 Kb |
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First line: BC337-16 BC337-25 BC337-16 BC337-25 TO-92 General Purpose Amplifier This device designed general Abstract: .. BC337-16 / BC337-25. NPN General Purpose Amplifier. BC337-16 BC337-25. This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced .. datasheet abstract.. |
289.33 Kb |
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First line: STEVAL-IHI001V1 Bill material Item Reference DL1-DL32 P1-P10 Part Buzzer KPE242 L-LTL4231N HD-A552RD Abstract: .. 20 1 Q1 BC337 TO-92. 21 3 R1, R10, R11 4K7 0805 SMD. 22 2 R3, R9 4K7 1206 SMD. 23 1 R2 15 kΩ 1206 SMD. 24 1 R4 390 1206 SMD. 25 3 R5, R6, R8 10 kΩ 1206 SMD. 26 4 R12, R13, R14, R15 10 kΩ 0805 SMD. 27 1 TR1 SMAJ33A-TR TransilTM .. datasheet abstract.. |
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First line: UM0526 User manual STEVAL-IFS007V1 4-channel proximity sensor board based TDA0161 Introduction This Abstract: .. 8 4 Q1,Q2,Q3,Q4 BC337-25 NPN standard BJT Any -. 9 4 R1,R3,R5,R7 15 kΩ 1⁄4 W Any -. 10 4 R2,R4,R6,R8 12 kΩ 1⁄4 W Any -. 11 4 R9,R12,R14,R15 560 Ω 1⁄4 W Any -. 12 4 R10,R11,R13,R16 120 Ω 1⁄4 W Any -. 13 4 R17,R18,R19 .. datasheet abstract.. |
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First line: SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. BC337 EPITAXIAL PLANAR TRANSISTOR Abstract: .. BC337. EPITAXIAL PLANAR NPN TRANSISTOR. Revision No : 2. GENERAL PURPOSE APPLICATION. SWITCHING .. BC337. Revision No : 2. C. COLLECTOR CURRENT I mA 0. P mW 0. C. 0. AMBIENT TEMPERATURE Ta C C P - Ta. 10. DC .. datasheet abstract.. |
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First line: BC327-25 BC327-40 SMALL SIGNAL TRANSISTORS PRELIMINARY DATA Type BC327-25 BC327-40 Marking BC327-25 Abstract: .. BC337-25 AND BC337-40 RESPECTIVELY. APPLICATIONS. ■ WELL SUITABLE FOR TV AND HOME. APPLIANCE EQUIPMENT ■ SMALL LOAD SWITCH TRANSISTORS. WITH HIGH GAIN AND LOW SATURATION VOLTAGE. ®. INTERNAL SCHEMATIC .. datasheet abstract.. |
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First line: COMPONENTS LTD. BC337 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS EPITAXIAL PLANAR TRANSISTOR Description Designed Abstract: .. BC337. DISCRETE SEMICONDUCTORS. R. DC COMPONENTS CO., LTD.. TECHNICAL SPECIFICATIONS OF NPN .. datasheet abstract.. |
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First line: Motor Control Revised Thursday October PowerBD-1000 Revision SYSTEMS M.Di Guardo Bill Materials Abstract: .. 42 1 Q7 BC337-25. 43 4 R1,R5,R22,R23 100K-1/2W. 44 1 R2 680K. 45 1 R3 330K. 46 1 R4 12K. 47 1 R6 10 4W. 48 2 R10,R7 0.047. 49 1 R8 2.2K. 50 1 R9 100. 51 4 R11,R24,R25,R26 10K. 52 3 R12,R15,R17 56K-1/2W. 53 3 R13,R16,R18 .. datasheet abstract.. |
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First line: STEVAL-IFS007V1 Distributed proximity sensor demonstration board based TDA0161 Data Brief Features TDA0161 Abstract: .. Q2 BC337. U1. TDA0161. U1. VCC 1 Adj 2 DHP 3 Adj 4. Filt. 5 Out 6 DetE. 7. C* 8. R11 120 Ω. C10. 1 nF. U2U2. 1 2. DHP 3 4 Filt 5 .. Q1 BC337. VCC Adj. Adj. TDA0161. VCC Adj DHP Adj Filt. Out DetE. C* TDA0161. TDA0161. VCC Adj DHP Adj Filt .. datasheet abstract.. |
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First line: Abstract: .. BC337-25. 3 1. D8. 1N4148 1 2. D5. BZX85C5V1. 1. 2. R9 100. D3. BZX84C15 1 2. C4 22nF/50V. VDD DRAIN. SET. RES. - + 0 .. datasheet abstract.. |
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