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SN65LBC184DRG4 Texas Instruments RS-485 Transceiver with Integrated Transient Voltage Suppression 8-SOIC -40 to 85 visit Texas Instruments
SN75LBC184DRG4 Texas Instruments Transient Voltage Suppression Differential Transceiver 8-SOIC 0 to 70 visit Texas Instruments
SN75LBC184CP Texas Instruments LINE TRANSCEIVER, PDIP8 visit Texas Instruments
SN75LBC184CDR Texas Instruments LINE TRANSCEIVER, PDSO8 visit Texas Instruments
SN65LBC184PE4 Texas Instruments RS-485 Transceiver with Integrated Transient Voltage Suppression 8-PDIP -40 to 85 visit Texas Instruments
SN75LBC184PE4 Texas Instruments Transient Voltage Suppression Differential Transceiver 8-PDIP 0 to 70 visit Texas Instruments

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BC184 Datasheet

Part Manufacturer Description PDF Type
BC184 Continental Device India NPN SILICON PLANAR EPITAXIAL TRANSISTORS Original
BC184 Fairchild Semiconductor SILICON NPN SMALL SIGNAL TRANSISTOR Original
BC184 Motorola Amplifier Transistors NPN Silicon Original
BC184 Advani-Oerlikon Silicon Transistor Guide Scan
BC184 Continental Device India Semiconductor Device Data Book 1996 Scan
BC184 Fairchild Semiconductor Amplifier Transistor (NPN Silicon) Scan
BC184 Farnell Components NPN Si Amplifier Transistors Scan
BC184 Ferranti Semiconductors Quick Reference Guide 1985 Scan
BC184 Micro Electronics SILICON AF SMALL SIGNAL AMPLIFIERS AND DRIVERS Scan
BC184 Micro Electronics Semiconductor Device Data Book Scan
BC184 Micro Electronics Low Level and General Purpose Amplifiers Scan
BC184 N/A Basic Transistor and Cross Reference Specification Scan
BC184 N/A Shortform Transistor PDF Datasheet Scan
BC184 N/A Transistor Replacements Scan
BC184 N/A Shortform Transistor PDF Datasheet Scan
BC184 N/A Cross Reference Datasheet Scan
BC184 N/A Semiconductor Master Cross Reference Guide Scan
BC184 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BC184 N/A Shortform Transistor Datasheet Guide Scan
BC184 N/A Shortform Data and Cross References (Misc Datasheets) Scan
Showing first 20 results.

BC184

Catalog Datasheet MFG & Type PDF Document Tags

TR BC184

Abstract: BC182 BC184 COLLECTOR 1 3 EMITTER MAXIM UM RATINGS Rating Collector-Emitter Voltage Collector-Base , BC1S2 50 60 BC183 30 45 6.0 100 350 2.8 1.0 8.0 -5 5 to +150 BC184 30 45 Unit Vdc Vdc Vdc mAdc mW mW/"C , ACTERISTICS Collector-Emitter Breakdown Voltage (lC = 2.0 mA, lB = 0) V(BR)CEO BC182 BC183 BC184 v (BR)CBO BC182 BC183 BC184 V(BR)EBO *CBO BC182 BC183 BC184 'e b o - - - - V 50 30 30 60 45 45 6.0 V - - , Motorola Small-Signal Transistors, FETs and Diodes Device Data 2-79 BC182,A,B BC183 BC184
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TR BC184 BC182A BC182B

BC184

Abstract: BC214 BCI84 BCI84L BC2I4 BC2I4L COMPLEMENTARY SILICON AF SMALL SIGNAL AMPLIFIERS & DRIVERS The BC184, BC184L (NPN) and BC214, BC214L (PNP) are complementary silicon planar epitaxial transistors for use in AF , feature good linearity of DC current gain. TO-92B 1E£B_J_ BC184L BC214L J £ I'll BOTTOM VIEW BC184 BC214 ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base , -55 to +150°C BC184,L 45V 30 V 6V TYPICAL CHARACTERISTICS (TA=25°C unless otherwise specified
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transistor BC184 LBC184 Small Signal Amplifiers bc184L npn 100MH

BC182

Abstract: BC183 BOINAS BC183 BC184 CASE 29-04, STYLE 17 TO-92 (TO-226AA) 1 Collector 3 Emitter ELECTRICAL CHARACTERISTICS , = 2.0 mA, IB = 0) BC182 50 â'" â'" BC183 30 â'" â'" BC184 30 â'" â'" Collector-Base Breakdown Voltage V(BR)CBO V (lC = 10/IAJE = 0) BC182 60 â'" â'" BC183 45 â'" â'" BC184 45 â'" â , 'CBO nA (VCB = 50 V, VBE = 0) BC182 â'" 0.2 15 (VCB = 30 V, VBE = 0) BC183 â'" 0.2 15 BC184 â , '" BC184 100 â'" - (lC = 2.0 mA, Vce = 5.0 V) BC182 120 â'" 500 BC183 120 â'" 800 BC184 250 â
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BC237 bc183 motorola BC183 3 bc 182
Abstract: BC184 Silicon NPN Small Signal Transistor â'¢ â'¢ BV CEO = 30V (Min.) h = 130 (Min.) @VCE = , '. © 2007 Fairchild Semiconductor Corporation BC184 Rev. 1.0.0 www.fairchildsemi.com 1 BC184 â , temperature of 150degrees C. © 2007 Fairchild Semiconductor Corporation BC184 Rev. 1.0.0 www.fairchildsemi.com 2 BC184 â'" Silicon NPN Small Signal Transistor Electrical Characteristics TC=25°C unless , Corporation BC184 Rev. 1.0.0 www.fairchildsemi.com 3 BC184 BC184 Silicon NPN Small Signal Transistor Fairchild Semiconductor
Original

BC182

Abstract: bc183 0 30 45 U nit Vdc Vdc Vdc mAdc mW m W /°C W att m W /°C °C BC182rA,B BC183 BC184 CASE 29-04 , Voltage He = 2.0 mA, Iq = 0) v {BR)CEO BC182 BC183 BC184 V(BR)CBO BC182 BC183 BC184 V(BR)EBO 'CBO BC182 BC183 BC184 >EBO - - - - Symbol Min Typ Max Unit V 50 30 30 60 45 45 6.0 V - - , / iA , VCe = 5.0 V) V nA 0.2 0.2 0.2 - 15 15 15 15 nA hFE BC182 BC183 BC184 BC182 BC183 BC184 BC182 BC183 BC184 40 40 100 120 120 250 80 80 130 v CE(sat) v BE(sat) VBE(on) - - - - -
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transistors BC 183

BC214

Abstract: LBC184 Ts I-J â'¢y V . - â'¢ âºâº '»j. . ♦ , - » . w. . » J;. vvl \ : The BC184, BC184L (NPN , good linearity of DC current gain. 'w-y TO-92B j :r BC184L BC214L S Vi £ BOTTOM VIEW BC184 BC214 , CBO VCEO vEB0 ic BC184,L 45V 30 V 6V P tot Tj,Tstg BC214,L 45V 5V 200mA 300mW 2.4mW/°e -55 to , Breakdown bvcbo Voltage BVEBO BC184/L BC214,L Collector Cutoff Current ICBO Emitter Cutoff Current IEBO Collector-Emitter Saturation!^CE(sat) BC184,L BC214,L Base-Emitter Saturation BC184,L BC214,L Base-Emitter Voltage
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BOX69477 vw 1.2 6V D-43010 BC184/L BC214/L
Abstract: The BC184, BC184L (NPN) and BC214, BC214L (PNP) are complementary silicon planar epitaxial , applications. Both types feature good linearity of DC current gain. BC184 BC214 BC184L BC214L ABSOLUTE MAXIMUM RATINGS BC184,L Collector-Base Voltage BC214,L 45V 45V Collector-Emitter , e b =4V Ic =0 Collector-Emitter Saturation ^CE(sat) BC184,L BC214,L IC=100mA IÃ=5mA* IC=100mA lB=5mA* VÃE(sat) BC184,L BC214,L Base-Emitter Voltage IC=10mA ÏB=0.5mÃ' 0.6 -
OCR Scan

BC182

Abstract: transistor BC184 ST BC182 . BC184 NPN Silicon Epitaxial Planar Transistor Amplifier Transistors On special , 100 mA Ptot Power Dissipation 60 ST BC184 Collector Current VCBO ST BC183 Emitter Base Voltage ST BC182 ST BC184 Collector Emitter Voltage Unit ST BC183 Collector , Hong Kong Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 ST BC182 . BC184 , ST BC183 hFE 125 - 900 - ST BC184 hFE 240 - 900 - ST BC182A
Semtech Electronics
Original
BC184 transistor transistor bc182 BC182 transistor transistor bc182B BC182 NPN transistor datasheet
Abstract: BC182 â'¦ BC184 NPN Silicon Epitaxial Planar Transistor Amplifier Transistors On special request , Dissipation 60 ST BC184 Collector Current VCBO ST BC183 Emitter Base Voltage ST BC182 ST BC184 Collector Emitter Voltage Unit ST BC183 Collector Base Voltage Value 100 mA , O 150 O -55 to +150 O C C BC182 â'¦ BC184 Characteristics at Tamb=25 oC Symbol , 900 - ST BC184 hFE 240 - 900 - ST BC182A hFE 125 - 260 - ST Bytes
Original

BC182

Abstract: BC183 ST BC182 . BC184 NPN Silicon Epitaxial Planar Transistor Amplifier Transistors On special , Power Dissipation 60 ST BC184 Collector Current VCBO ST BC183 Emitter Base Voltage ST BC182 ST BC184 Collector Emitter Voltage Unit ST BC183 Collector Base Voltage , , Stock Code: 724) ® Dated : 07/12/2002 ST BC182 . BC184 Characteristics at Tamb=25 oC Symbol , 900 - ST BC184 hFE 240 - 900 - ST BC182A hFE 125 - 260 - ST
Semtech Electronics
Original

bc183

Abstract: BC182 ST BC182 . BC184 NPN Silicon Epitaxial Planar Transistor Amplifier Transistors On special , Power Dissipation 60 ST BC184 Collector Current VCBO ST BC183 Emitter Base Voltage ST BC182 ST BC184 Collector Emitter Voltage Unit ST BC183 Collector Base Voltage Value , Kong Stock Exchange, Stock Code: 724) Dated : 07/12/2002 ST BC182 . BC184 Characteristics at , BC183 hFE 125 - 900 - ST BC184 hFE 240 - 900 - ST BC182A hFE
Semtech Electronics
Original
BC184 DATASHEET BC183 transistor

CBC184

Abstract: BC182 BC182, A, B BC183, A, B, C BC184, B, C NPN SILICON PLANAR EPITAXIAL TRANSISTORS TO-92 Plastic , in free air BC182 50 60 BC183 30 45 6.0 100 350 UNITS V V V mA mW BC184 30 , VCEO TEST CONDITION IC=2mA, IB=0 MIN 50 30 V V VCBO BC182 BC183/BC184 IC=10µA, IE=0 Emitter Base Voltage VEBO BC182 BC183/BC184 IE=100µA, IC=0 60 45 6.0 V V V Collector , Limited Data Sheet Page 1 of 5 BC182, A, B BC183, A, B, C BC184, B, C NPN SILICON PLANAR
Continental Device India
Original
CBC184 BC184 pin out BC182-18 BC184-B-C bc184 application 2N5551 TO92 india limited BC183/BC184 BC183/184 201205E C-120

cbc182

Abstract: bc184 ra ,A,B BC183 BC184 CASE 29-04, STYLE 17 TO-92 (TO-226AA) T stg 3 E m itte r THERMAL , BC183 BC184 ViBRICBO BC182 BC183 BC184 V(BR|EBO ICBO BC182 BC183 BC184 lEBO - - Symbol Min , - 0.2 0.2 0.2 - 15 15 15 15 nA h FE BC182 BC183 BC184 BC182 BC183 BC184 BC182 BC183 BC184 , AND DIODES BC182,A,B, BC183, BC184 ELECTRICAL CHARACTERISTICS Icontinued) (Ta - 25°C unless , A, VCE = 3-0 V, f = 100 MHz) MHz BC182 BC183 BC184 8C182 BC183 BC184 ^-ob Qb hfe BC182 BC183 BC184
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cbc182 bc184 ra

BC184 pin out

Abstract: BC182B BC182,A,B BC183 BC184 Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC182 BC183 BC184 Unit Collector­Emitter Voltage VCEO 50 30 30 Vdc , ) V(BR)CEO BC182 BC183 BC184 V(BR)CBO BC182 BC183 BC184 Emitter­Base Breakdown Voltage (IE , )EBO February, 2001 ­ Rev. 1 V ICBO BC182 BC183 BC184 Emitter­Base Leakage Current (VEB , nA Publication Order Number: BC182/D BC182,A,B BC183 BC184 ELECTRICAL CHARACTERISTICS (TA =
ON Semiconductor
Original
226AA

BC182

Abstract: BC184 ST BC182 . BC184 NPN Silicon Epitaxial Planar Transistor Amplifier Transistors On special , Power Dissipation 60 ST BC184 Collector Current VCBO ST BC183 Emitter Base Voltage ST BC182 ST BC184 Collector Emitter Voltage Unit ST BC183 Collector Base Voltage Value , ) R Dated : 07/12/2002 ST BC182 . BC184 Characteristics at Tamb=25 oC Symbol Min. Typ , ST BC184 hFE 240 - 900 - ST BC182A hFE 125 - 260 - ST BC182B
Semtech Electronics
Original
ST transistor BC184 NPN ST 024 bc182* transistor BC184* transistor

cbc182

Abstract: BC182 MAXIMUM RATINGS Rating Symbol BC182 BC183 BC184 Unit Collector- Emitter Voltage VCEO 50 30 30 Vdc , Junction Temperature Range Tj, Tstg -55 to+150 °C BC182,A,B BC183 BC184 CASE 29-04, STYLE 17 TO-92 (TO , Breakdown Voltage V(BR)CEO V (IC = 2.0 mA, lB = 0) BC182 50 â'" â'" BC183 30 â'" â'" BC184 30 , '" BC183 45 â'" â'" BC184 45 â'" â'" Emitter-Base Breakdown Voltage v(BR)EBO 6.0 â'" â'" V (IE = , (VCB = 30V,VBE = 0) BC183 â'" 0.2 15 BC184 â'" 0.2 15 Emitter-Base Leakage Current lEBO â'" â
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BC182

Abstract: BC183 ST BC182 . BC184 NPN Silicon Epitaxial Planar Transistor Amplifier Transistors On special , 100 mA Ptot Power Dissipation 60 ST BC184 Collector Current VCBO ST BC183 Emitter Base Voltage ST BC182 ST BC184 Collector Emitter Voltage Unit ST BC183 Collector , Hong Kong Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 ST BC182 . BC184 , ST BC183 hFE 125 - 900 - ST BC184 hFE 240 - 900 - ST BC182A
Semtech Electronics
Original
Abstract: BC182, A, B BC183, A, B, C BC184, B, C NPN SILICON PLANAR EPITAXIAL TRANSISTORS TO-92 Plastic , THERMAL RESISTANCE Junction to Case Junction to Ambient in free air BC184 30 45 UNITS V V V , VCBO BC182 BC183/BC184 IC=10µA, IE=0 Emitter Base Voltage VEBO BC182 BC183/BC184 , Limited Data Sheet Page 1 of 5 BC182, A, B BC183, A, B, C BC184, B, C NPN SILICON PLANAR , Current Gain SYMBOL hFE TEST CONDITION IC=10µA, VCE=5V MIN BC182/183 BC184 40 100 Continental Device India
Original

bc184 ra

Abstract: cbc182 Operating and Storage Junction Temperature Range Tj, Tstg -55 to+150 °C BC182,A,B BC183 BC184 CASE 29-04 , '" BC184 30 â'" â'" Collector-Base Breakdown Voltage V(BR)CBO V (lC = 10nA, lE = 0) BC182 60 â'" â'" BC183 45 â'" â'" BC184 45 â'" â'" Emitter-Base Breakdown Voltage V(BR)EBO 6.0 â'" â'" V (lE = 100 , = 30 V, VBE = 0) BC183 â'" 0.2 15 BC184 â'" 0.2 15 Emitter-Base Leakage Current lEBO â'" â'" 15 nA (VEB = 4.0 V, IC = 0) > Motorola, Inc. 1996 (M) MOTOROLA BC182,A,B BC183 BC184 ELECTRICAL
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BC182A

Abstract: BC183 BC182,A,B NPN Silicon BC183 BC184 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 , )CEO BC182 BC183 BC184 V(BR)CBO BC182 BC183 BC184 Emitter ­ Base Breakdown Voltage (IE = 100 , V ICBO BC182 BC183 BC184 Emitter­Base Leakage Current (VEB = 4.0 V, IC = 0) Motorola , BC182,A,B BC183 BC184 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max BC182 BC183 BC184 40 40 100 - - - - - -
Motorola
Original

bc183b

Abstract: 2904S W / °C °C BC182, A, B BC183, A, B, C BC184, B, C C A S E 29-04, S T Y L E 17 TO-92 (TO , ) 0.2 0.2 0.2 - 15 15 15 15 nA hFE BC182 BC183 BC 184 BC182 BC183 BC 184 BC182 BC183 BC184 d e " , ti?E S tl Q0flSfi32 M Jj BC182, A, B, BC183, A, B, C, BC184, B, C E L E C T R I C A L C H A R A C
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bc183b 2904S BC183B MOTOROLA BC183 2 BC183B BC183C

transistor BC 331

Abstract: BC 331 Transistor ) Parameter Symbol Value Unit Collector Base Voltage BC182 BC183, BC184 VCBO 60 45 V Collector Emitter Voltage BC182 BC183, BC184 VCEO 50 30 V VEBO 6 V IC 100 mA , Cutoff Current at VEB = 4 V Symbol Min. Max. Unit BC182, BC183 BC184 BC182 BC183 BC184 BC182, BC183 BC184 hFE hFE hFE hFE hFE hFE hFE 40 100 120 120 250 80 130 500 800 800 - - BC182 BC183, BC184 ICBO - 15 15 nA IEBO - 15 nA
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BC183C-BC184C transistor BC 331 BC 331 Transistor bc 331 bc 184 transistor h21e transistor BC 55 CB-76

BC182 NPN transistor datasheet

Abstract: transistor bc182 BC182, A, B BC183, A, B, C BC184, B, C NPN SILICON PLANAR EPITAXIAL TRANSISTORS TO-92 Plastic , THERMAL RESISTANCE Junction to Case Junction to Ambient in free air BC184 30 45 UNITS V V V , VCBO BC182 BC183/BC184 IC=10µA, IE=0 Emitter Base Voltage VEBO BC182 BC183/BC184 , Limited Data Sheet Page 1 of 5 BC182, A, B BC183, A, B, C BC184, B, C NPN SILICON PLANAR , Current Gain SYMBOL hFE TEST CONDITION IC=10µA, VCE=5V MIN BC182/183 BC184 40 100
Semtech Electronics
Original
BC182 NPN transistor BC182 datasheet bc183 equivalent
Showing first 20 results.