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Part : BC140-10 Supplier : STMicroelectronics Manufacturer : Bristol Electronics Stock : 142 Best Price : $1.1250 Price Each : $3.00
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BC140-10 Datasheet

Part Manufacturer Description PDF Type
BC140-10 Central Semiconductor NPN Silicon Transistor Original
BC140-10 Philips Semiconductors NPN medium power transistors Original
BC140-10 Philips Semiconductors Small-signal Transistors Original
BC140-10 Central Semiconductor Leaded Small Signal Transistor General Purpose Scan
BC140-10 Continental Device India Semiconductor Device Data Book 1996 Scan
BC140-10 Crimson Semiconductor Transistor Selection Guide Scan
BC140-10 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
BC140-10 Infineon Technologies TRANS GP BJT NPN 40V 1A 3TO 39 Scan
BC140-10 ITT Semiconductors Semiconductor Summary 1969 Scan
BC140-10 Micro Electronics Semiconductor Devices Scan
BC140-10 N/A Basic Transistor and Cross Reference Specification Scan
BC140-10 N/A Basic Transistor and Cross Reference Specification Scan
BC140-10 N/A Shortform Transistor PDF Datasheet Scan
BC140-10 N/A Shortform Transistor PDF Datasheet Scan
BC140/10 N/A Shortform Transistor Datasheet Guide Scan
BC140-10 N/A Shortform Electronic Component Datasheets Scan
BC140-10 National Semiconductor PRO ELECTRON SERIES - JFET Scan
BC140-10 National Semiconductor Pro-Electron Transistor Datasheets Scan
BC140-10 National Semiconductor Shortform National Semiconductor Datasheet Scan
BC140-10 Raytheon Selection Guide 1977 Scan
Showing first 20 results.

BC140-10

Catalog Datasheet MFG & Type PDF Document Tags

TRANSISTOR BC140

Abstract: TRANSISTOR pnp BC140 current gain BC140-10; BC141-10 BC140-I6; BC141-16 transition frequency open base CONDITIONS open , current gain BC140-10; BC141-10 BC140-16; BC141-16 DC current gain BC140-10; BC141-10 BC140-16; BC141-16 DC current gain BC140-10; BC141-10 BC140-16; BC141-16 collector-emitter saturation voltage
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OCR Scan
BC140 TRANSISTOR BC140 TRANSISTOR pnp BC140 TRANSISTOR BC141 bc141 TRANSISTOR BC140 npn BC141 BC160 BC161

TRANSISTOR BC140

Abstract: TRANSISTOR BC141 =1.0a 1.8 v hFE vce=1.0v, Ic=100|JA (bc140-10, bc141-10) 50 100 hFE vce=1.0v, Ic=100|JA (bc140-16, bc141-16) 100 205 hFE VCE=1.0V, lc=100mA (BC140-10, BC141-10) 63 110 160 hFE VCE=1.0V, lc=10QmA (bc140-16, BC141-16) 100 195 250 hFE vce=1.0v, lc=1.0a (bc140-10, bc141-10) 10 30 hFE vce=1.0v, lc=1.0a (bc140
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OCR Scan
bc140 TRANSISTOR Transistor BC140-10 bc141.10 bc140 NPN transistor transistor 335 100MH

bc140

Abstract: BC141 ;VCE= 1 V hFE BC140 BC141 max. 40 60 max. 1 A max. 3,7 W max. 175 °C > 50 MHz BC140-10 BC140 , V 50 MHz 25 pF 80 pF BC140-10 BC140-16 BC141-10 BC141-16 40 90 63 100 100 160 160
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OCR Scan
BC140 10 J 3305 bc14016 7--33-OS T-33-05 10JUS

TRANSISTOR BC140

Abstract: TRANSISTOR pnp BC140 W BC140-10; BC141-10 63 100 160 BC140-16; BC141-16 100 160 250 50 - , 100 nA hFE DC current gain IC = 100 µA; VCE = 1 V BC140-10; BC141-10 - 40 - BC140-16; BC141-16 - 90 - BC140-10; BC141-10 63 100 160 BC140-16; BC141-16 100 160 250 BC140-10; BC141-10 - 20 - BC140-16; BC141-16 - 30 - hFE
Philips Semiconductors
Original
BC141 philips transistor bc140 DC BC140 equivalent BC141 equivalent M3D110 MAM317 SCA54

BU140

Abstract: bc140 lc = 50 mA; VCg = 10 V *T > 50 MHz BC140-10 BC140-16 BC141-10 BC141-16 D.C. current gain , K/W K/W nA nA (iA /*A V V V V MHz pF pF BC140-10 BC140-16 D.C. current gain BC141
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OCR Scan
BU140 BC-141 DM-127 Q27SD7 BU14U 100MA
Abstract: frequency at f = 20 MHz lc = 50 m A ;V CE = 10 V M Hz 50 BC140-10 BC141-10 D.C. current gain lc , 150 °C D.C. current gain lc = 100/xA;VCE = 1 V BC140-10 BC140-16 BC141-10 BC141-16 40 90 -
OCR Scan
T-33-0E
Abstract: temperature Ti Transition frequency at f = 20 MHz Iq = 50 mA; V q E = 10 V > MHz 50 BC140-10 , BC140-10 BC140-16 BC141-10 BC141-16 40 90 N AMER PHILIPS/DISCRETE bHE D bbS3H31 DOSTSOH TH4 -
OCR Scan
53T31 575DA IEC134 S3H31

2N4033

Abstract: bc140 TO92 228 BC160-10 TO-39 40 1000 3700 63 160 50 BC140-10 228 BC160-16 TO
Philips Semiconductors
Original
2N4031 2N4033 BC161-10 BC161-16 BC369 BC369-16 bc140 TO92 BC638-10 bc368 equivalent BC369 NPN BC368

BC140

Abstract: BC140-10 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted ) BC140-10, -16 BC141-10, -16 CASE 79-04
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OCR Scan
2N3019 BC140 MOTOROLA

Bc300

Abstract: 2N3742 100 1 1 1000 25 50 50 850 BC140-10 80 40 7 0.8 1 0.1 60 63 160 100 1 1 1000 25 50 50 850
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OCR Scan
2N3678 2N3742 2N4237 2N4926 2N5320 2N5321 Bc300

2N3643

Abstract: 2N2222 -92 30 BC140-10 BC160-10 40 63/160 100 1.40 1000 25 50 â'" 800 5.0 TO-39 3-16
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OCR Scan
2N3641 2N3300 2N3302 2N2219 2N2222 2N3643 2N3643 TO-105 2N2219/2N2222 high voltage npn to-92 BC126 T0-105

bc141-16

Abstract: BC140 BC140 BC141 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO -39 metal package for general purpose applications. P-N-P complements are BC160 and BC161. Q U IC K R E F E R E N C E D A T A BC140 Collector-emitter voltage (open base) Collector current (d.c.) Total power dissipation up to T case -45 °C Junction temperature Transition frequency at f = 20 M Hz lc = 5 0 m A ; V C E = 10 V v CE0 'c ^tot Ti max. max. max. max. > 40 1 3,7 175 50 BC140-10 B C 1 4 1 10 D.C. current gain
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OCR Scan
BC140- BC141-

bc368 equivalent

Abstract: BFY50 equivalent 146 BC140 TO-39 40 1000 3700 63 250 50 ­ BC160 225 BC140-10 TO
Philips Semiconductors
Original
2N1613 2N1711 2N1893 BC638 BFY50 equivalent 2N1711 Data Sheet BC635-16 equivalent transistor 2N1711 TO-92 BC368-16 BC368-25 BC369-25
Abstract: 40 2 150 1000 250 2 2 1 0.6 1 2N656 2N657 2N696 2N697 2N699 BC140 BC140-10 BC140-16 BC140 -
OCR Scan
2N5681 2N5682 BC140-6 BC141-6 BC3004 BC300-5

BC140 equivalent

Abstract: 2n3019 equivalent Discrete Devices European "Pro Electron" Types Type Near Equivalent Polarity Pkg. BC107 2N2484 NPN TO-18 BC107A 2N930 NPN TO-18 BC107B 2N930 NPN TO-18 BC108 2N2484 NPN TO-18 BC108A 2N930 NPN TO-18 BC108B 2N930 NPN TO-18 BC108C 2N3117 NPN TO-18 BC109 2 N2484 NPN TO-18 BC109B 2N930 NPN TO-18 BC109C 2N3117 NPN TO-18 BC140 2N3019 NPN TO-39 BC140-6 2N3019 NPN TO-39 BC140-10 2N3019 NPN TO-39 BC140-16 2N3019 NPN TO-39 BC141 2N3019 NPN TO-39 BC141-6 2N3019 â  NPN TO-39 BC141
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OCR Scan
2n3019 equivalent BC107 equivalent transistors bcy59 equivalent equivalent to BC177 2n930 equivalent BC107 pnp equivalent BC143 2N2904A 2N4030 BC160-6 2N4032 BC161-6

T053

Abstract: BC140-16 1 40-400 1/0.1 50H 3.7 BC140-10 REQ NPN T039 40 1 63-160 1/0.1 50M 3.7 BC140-16 REQ NPN T039 40 1
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OCR Scan
2N6589 2N6590 2N6594 2N6609 2N6653 2N6654 T053 BC109C NPN bc108 IC hr 0000MH5

1V160

Abstract: BC141-10 MAXIMUM RATINGS Rating C o lle cto r-E m itte r Voltage C ollector-Base Voltage Em itter-Base Voltage C o lle cto r C u rrent - C o ntinuous Total Device D issipa tion (a> T a = 25°C D erate above 25°C Total Device D issipa tion (ft T c = 25°C Derate above 25°C O perating and Storage Ju n c tio n Tem perature Range Symbol VcEO VCBO vebo BC BC Unit Vdc Vdc Vdc Ade 140 40 80 7 141 60 100 BC140-10, -16 BC14110, -16 CASE 79-04, STYLE 1 TO-39 (TO-205AD) 3 Collector !C Pd 0.8 4.6
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OCR Scan
1V160

KT503A

Abstract: 2SC1330 TP5B24 MMBC1623L3 MMBC1623L3 MMBC1623L3 2N5814 GES5814 BCW90A 033024 033024 TP5B14 BC340·10 BC140·10
Advanced Semiconductor
Original
2N2868 2N2909 2N2534 KT503A 2SC1330 45M40 LOW-POWER SILICON NPN RN5816 RN5B16 RN5818 HSE125 HSE210 HSE171

Bc177a

Abstract: SEMELAB LTD 37E D fll331fl7 DDD0031 5 ISMLB - y - X J - 01 - - 3 3 - 0 / type No. Package Vc e o · c cont 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 1 0.5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.2 0.2 0.2 hFEc V c e /'C PD B C1 0 7 BC107A BC107B BC108 BC108A BC108B BC108C BC109 BC109B BC109C BC119 BC139 BC140 BC140-6 BC140-10 BCX40-16 BC141 BC14 0 - 6 BC141-10 BC14 1 - 1 6 BC142 BC143 BC160 BC1 60-6 BC160 - 1 0 BC1 6 0 - 1 6
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OCR Scan
Bc177a BC171 BC177 BC177A BC178 BC178B BC179

BC140 equivalent

Abstract: 2N2484 equivalent transistors 2N3019 NPN TO-39 BC140-6 2N3019 NPN TO-39 BC140-10 2N3019 NPN TO-39 BC140-16 2N3019 NPN TO-39 BC141
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OCR Scan
2N328A 2N1025 2N2484 equivalent transistors bc160 equivalent BC177 equivalent bc108c equivalent bc108 equivalent 2n2484 equivalent 2N327A 2N327B 2N328B 2N329A 2N329B

BC140

Abstract: bc141 ;VCE= 1 V hFE BC140 BC141 max. 40 60 max. 1 A max. 3,7 W max. 175 °C > 50 MHz BC140-10 BC140 , V 50 MHz 25 pF 80 pF BC140-10 BC140-16 BC141-10 BC141-16 40 90 63 100 100 160 160
Comset Semiconductors
Original
BC140-BC141 DSA008994 1225pF pnp BC140 BC-140 IC BC140 BC140/16 BC141/10 BC141/16

Bc 140 transistor

Abstract: TRANSISTOR BC 141 frequency at f = 20 MHz lc = 50 m A ;V CE = 10 V M Hz 50 BC140-10 BC141-10 D.C. current gain lc , 150 °C D.C. current gain lc = 100/xA;VCE = 1 V BC140-10 BC140-16 BC141-10 BC141-16 40 90
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OCR Scan
Bc 140 transistor TRANSISTOR BC 141 bc 187 npn transistor TRANSISTOR BC 187 transistor BC 310 transistor bc 102
Showing first 20 results.