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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
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ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
LM3S5G51-IBZ80-A0T Texas Instruments Stellaris Microcontroller 108-NFBGA visit Texas Instruments
LM3S8G62-IBZ50-A0 Texas Instruments Stellaris Microcontroller 108-NFBGA visit Texas Instruments

BC 108 transistor

Catalog Datasheet MFG & Type PDF Document Tags

bc 303 transistor

Abstract: BC 109 Transistor gain statique : A â'" B '"The transistor BC 108 ¡s grouped in three classes of DC gain : A - B - C Le transistor BC 108 est subdivisé en trois classes de gain statique : Aâ'" B â'" C â'¢"The transisto BC 109 , ^ BC 108 BC 109 Jompl. of BC 177, BC 178, BC 179 Preferred device Dispositif recommandé rhe NPN "plan epitaxial" transistors BC 107, 3C 108 and BC 109 ara intended for use in L.F. preamplifier and , , BC 108 et IC 109 sont destinés eux usages BF dens les étages 'préamplificateurs" at "drivers". Le
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TRANSISTOR BC 137

Abstract: TRANSISTOR bc107 current gain IC 107 JC 108 -BC 109 BC107, BC 108, and BC 109 are epitaxial NPN silicon Planartransistors in , 108 B Q60203-X108-B BC 108 C Q60203-X108-C BC 1091) 060203-X109 BC 109 B Q60203-X109-B BC 109 C , BC 107 BC 108 BC109 Collector-emitter voltage Vces 50 30 30 V Collector-emitter voltage Vceo 45 20 ,   a23SbQS â¡â¡â¡40^0 b "ISIE6 -7"-7 SIEMENS AKTIENGESELLSCHAF BC 107 BC 108 -BC 109 Static , apply: hFE group A B C Type BC 107 BC 107 - BC 108 BC 108 BC 108 - BC 109 BC 109 k hf E hFE hF E
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TRANSISTOR BC 137 TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor BC1071 Q62702-C680 Q60203-X107-A Q60203-X107-B Q60203-X108 BC108

TRANSISTOR BC 137

Abstract: BC107 characteristic 108 - BC 109 B C 107, BC 108 , 108 A BC 108 B BC 108 C BC 1091> BC 109 B BC 109 C Ordering code Q62702-C680 Q60203-X107-A , Junction to case ftthJA flthJC Vces Vceo V'ebo B C 107 50 45 6 100 200 50 175 300 B C 108 BC 109 V , 023SbQS DGOMO^G b BISIE6 SIEMENS AKTIENGESELLSCHAF BC 107 BC 108 , following static characteristics apply: hFE group Type A B C 107 BC 108 *FE B B C 107 B C 108 B C 109 Afe C
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BC 108 transistor TRANSISTOR BC 109 transistor bc 102 NT 101 BC 107 transistor b 108 b Q60203-X108-A 60203-X109 Q60203-X109-C

transistor eft 323

Abstract: EFT 323 Transistor BC 108 C entspricht 100 kOhm 2-1-25H1-665 TGL wird vom Zentrallager Erfurt 9100 der Typ BC 149 C , ZF-Spule L5/6 M-ZF-Spule L9 FH-ZF-Spule L8 FU-ZF-Spule L12 FH-ZF-Spule L13 3573-092-1 Transistor BC 528 Or. II Transistor AC 180 K Transistorpaar AC 180 K/181 K Blko 4700 uF, 25 V Ferritkern UKW ROÍ a 4x0 , V geändert in 323 u BC 108 A geändert in TBC 108 A BC 108 C geändert in TBC 108 C Äquivalente , spricht TNM 100 Das Importlager in Potsdam liefert statt des Transistors T 413 C den Typ BC 109 C oder BC
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transistor eft 323 EFT 323 transistor BC-108 6001-015 service-mitteilungen EFT323 3792-OOI-I 459I-O75 57OO9OO

transistor vergleichsliste

Abstract: Transistor Vergleichsliste DDR BCW 49 B S Y 24 B SY 72 BC 107 BC 108 BC 109 BC 129 BC 130 BC 131 BC 147 BC 148 BC 149 BC 157 BC 158 , 107 BC 108 BC 109 BC 171 BC 172 BC 173 BC 107 BC 108 BC 147 BC 148 2 SC 650 BC 157 BC 177 BC 158 BC 179 BC 107 BC 108 BC 109 SC 239 Seite 39 39 39 39 34 34 40 40 32 33 33 34 34 34 35 35/36 35 35 35 , fü r NF-Vor- u n d Treiberstufen SC 110 SC 111 SC 206 BC 107 BC 108 BC 147 BC 148 BC 112 BC 146 B C W , 237 SC 238 SC 236 42 42 42 48 45 48 48 49 49 49 49 49 45 45 46 46 46 47 47 47 48 48 42 42 42 BC 108 BC
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transistor vergleichsliste Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR

TRANSISTOR BC 208

Abstract: TRANSISTOR BC 158 °> max (V) â c (mA) BC 107 N TO-18 300 100 45 110 450 â'¢ 2 5 0.6 100 150 6 10 BC 108 N TO-18 300 100 20 110 800 t 2 5 0.6 100 150 6 10 BC 109 N TO-18 300 100 20 110 800 t 2 5 0.6 100 150 6 4 BC 110 N TO-18 300 50 80 30 â'" 2 5 0.6 50 100+ 5 â'" BC 113 N TO-106 200 50 25 200 1000 1 5 0.35 1 60 4 3 BC 114 N TO-106 200 50 25 200 1000 1 5 0.35 1 70 4 3 BC 132 N TO-106 200 50 25 60 300 1 10 0.35 1 40 4 â'" BC 147 N TO-92F 350 100 45 100 450 » 2 5 0.6 100 200+ 4.5 10 BC 148 N TO-92F 350 100 20 110
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TRANSISTOR BC 208 TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 MELF-005 MT-12 S40/S-

transistor bc 325

Abstract: transistor bf 179 , of BC 107, BC 108, BC 109 * BC 177 * BC 178 BC 179 The PNP planar epitaxial transistors BC 177, 3C 178 and BC 179 are intended for use in L.F. n-eamplifier and driver stages. The BC 179 is Foroseen for low noise stages. .es transistors PNP "planar épitaxlal" BC 177, BC 178 et SC 179 sont destinés aux usages BF dans les étages "préamplificateur" et "driver". Le BC 179 est prévu oour les étages faible , transistor BC 179 is selected in two classes of DC gain : A â'" B Le transistor BC 179 ast livré an deux
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transistor bc 325 transistor bf 179 Transistor BC 177 TO-18 BC-177 pnp transistor transistor BC 324 low noise transistor bc 179

TRANSISTOR BC 313

Abstract: npn 2222 transistor 2N 2894 15 V 2N 914 2N 2368 2N 2369 20 V BC 108 IK BSfe:* 25 V BSX 51 BSX52 BC , general purpose and fast switching transistor selector guide guide de sélection ^ transistors , 2222 A 2N 2906 2N 2907 2N 2218 A 2N 2219 A 2N 2904 2N 2905 BC 211 BSX 45 BC 313 BSV 15 45 V BC 107 BCY 59 BC 177 BCY 79 50 V BSX51 A BSX52 A BSW21 A BSW22 A 2N 16113(1) 2N 17111(1) 60 V BSX52 B 2N 2906 A 2N 2907 A 2N 2904 A 2N 2905 A BC 211 A BSX 46 BC 313 A BSV 16 80 V 2N 1893 2N
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TRANSISTOR BC 313 npn 2222 transistor transistor 2n 2222 2907 TRANSISTOR PNP NPN 2904 2n 2222 transistor

bc 107 transistor

Abstract: transistor Bc 540 2N 2894 15 V 2N 914 2N 2368 2N 2369 20 V BC 108 IK BSfe:* 25 V BSX 51 BSX52 BC , ) 2 0,6 100/ 5 150 4 10 BC 108 300 20 125* 900*(1) 2 0,6 100/ 5 150 4 10 BC 109 300 20 240 , general purpose and fast switching transistor selector guide guide de sélection ^ transistors , 2222 A 2N 2906 2N 2907 2N 2218 A 2N 2219 A 2N 2904 2N 2905 BC 211 BSX 45 BC 313 BSV 15 45 V BC 107 BCY 59 BC 177 BCY 79 50 V BSX51 A BSX52 A BSW21 A BSW22 A 2N 16113(1) 2N 17111(1) 60 V BSX52
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BSX24 transistor Bc 540 BC 540 TRANSISTOR 2N 2222 2221-2N BC 390 Transistor 2N735 2N736 BCY58 BCY59

BC 109 Transistor

Abstract: BC 108 DRIVER/PRE-AMPLIFIER TRANSISTORS BC 107 45 50 6 110/450 2 5 ' 200 300 0.02 0.25 300 2.5 TO-18 BC 107 A 45 50 6 110/220 2 5 200 300 0.02 0.25 300 2.5 TO-18 BC 107B 45 50 6 200/450 2 5 200 300 0.02 0.25 300 2.5 TO-18 BC 108 20 30 5 110/800 2 5 200 300 0.02 0.25 300 2.5 TO-18 BC 108A 20 30 5 110/220 2 5 200 300 U02 0.25 300 2.5 TO-18 BC 108B 20 30 5 200/450 2 5 , -18 PNP DRIVER/PRE-AMPLIFIER TRANSISTOR - BC 177 45 50 5 75/260* 2 5 200 300
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BC 109 Transistor BC 108 transistor bc 107 CIL 108 BC 109C transistor bc 107b transistor T0-105 DO-21

TRANSISTOR BC 416 b pnp

Abstract: TRANSISTOR BC 415BC 416 5 0,1 10 iriA 108 , im BC 415 â'¢ BC 416 Silizium-PNP-Epitaxial-Planar NF-Transistoren Silicon PNP Epitaxial , of the transistor Abmessungen in mm Dimensions in mm 7,2-9,7 Absolute Grenzdaten Absolute , CM ~J\ BM tot stg BC 415 45 35 Normgehäuse Case 10 A 3 DIN 41 868 JEDEC TO 92 Z Gewicht â  Weight max. 0,2 g BC 416 50 V 45 V V mA mA 5 100 20 300 150 -55 . +150 mW °C °C B 2/V
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TRANSISTOR BC 416 b pnp TRANSISTOR BC 415 TRANSISTOR BC 416 b TRANSISTOR BC 415 b pnp BC 104 transistor bc416

TRANSISTOR BC 137

Abstract: TRANSISTOR BD 338 / TO-71* BC107/108 BCY58/59 2N2483/2484 TO-92 BC546/547 BCX58 JC500/501 JC546-48 M PS3704-3706 MPS3904 , BC817/818 B C X 19/20 PMBTA06 BSS64 BC Y 87-89*1' DARLING TO NS BC517 BC617/618 M PSA13/14 MPSA25 2N6427 1 > double transistor * TO-71 +SO T143 BCV27/47 PM BTA13/14 Small-signal transistors PRO DUCT DATA: PAG ES 7-16 NPN surface-m ount SOT89 SOT223 SOT323 BC846W /847W PM SS3904 PMST6428/6429 BC , M PS6534/6535 MPSA55/56 DARLING TO NS BC516 MPSA63/64 M PSA76/77 BSS68 1) double transistor t t SC70
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2PC1815 2PA1015 BD136 TRANSISTOR BD 338 transistor BD 141 TRANSISTOR 328 SOT89 JC546 JC sc70 BC107/108 PS6513-6515 MPS6520/6521 2PC945 2PD601/A

APC UPS CIRCUIT DIAGRAM rs 1500

Abstract: APC UPS es 500 CIRCUIT DIAGRAM PLANAR NPN BC 107 BC 108 BC 109 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC107, BC 108 and , temperature Junction temperature BC 107 BC 108 BC 109 50 V 45 V 6V 30 V 20 V 30 V 20 V 5V 5V 100 mA 0.3 , BC 107 BC 108 BC 109 THERMAL DATA Rth ¡_case Thermal resistance junction-case max max 200 500 °C/W , 40V T am b = 150 °C for BC 108 - BC 109 VCb = 20 V VCb = 20 V T am b = 150 °C 15 nA 15 (j,A 15 nA , BC 108 for BC 109 50 30 30 V V V V(BR)CEO'Collector-em itter breakdown voltage dB = o) lc =
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APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM AF106

BC 109C transistor

Abstract: bc 106 transistor 0.050 .050 0.05 60 NPN D R IV E R /P R E -A M P L IF IE R T R A N S IS T O R S BC 107 BC 107 A BC 107B BC BC BC BC 108 108A 108B 108C 45 45 45 20 20 20 20 20 20 20 50 50 50 30 30 30 30 30 30 30 6 6 6 5 , -18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 BC 109 BC 109B BC 109C 300 300 J300 · PNP D R IV E R /P R E -A M P L IF IE R T R A N SIST O R BC 177 BC 177A BC 177B BC 178 BC 178A BC 178B BC 179 BC 179A BC 179B 45 45 45 25 25 25 20 20 · 20 50 50 50 30 30 30 25 25 25 5 5 5 5 5 5 5 5 5 75
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BC 107 npn transistor pin configuration TR BC 237 B transistor BC 368 transistor BC 108C TRANSISTOR TO-106 transistor BC 106 QQDDD13 DO-35 DO-41 DO-34

BC 148 TRANSISTOR

Abstract: DIODE ga . ¿135010 UL >64/2 RADUGA 730 IS: K 155 L I )1 TB-Gerät Transistor 8342113 U 2405 S BC 413 B/C BC 149 B/G 8302130 8 332 128 BC 148 B 8382120 BC 148 C 8343042 3C 107 A 8322138 BC 147 B/C Diode AAP 155 3442029 BYP 401/100 6432035 Z-Di-ode BZP 611 D5V6 Eiode BYP 401-50 8462024 Autosuper Transistor Safari B I ? 214 8353003 3 3 2 2 10 1 BC 108 C 8372110 BC 160 EI ? 215 8313004 Diode 8442029 /AP 155 Diodenoaar 6452030 AAP 153 Stabilisator 2x BAP 661 Theriaistor 47 R 8475254 Diode 8452014 EAP 661 Transistor Auto633216
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6D22S BC 148 TRANSISTOR DIODE ga transistor bc 148 bc 147 B transistor 2GA113 Mitteilung VEB RFT 350AF-S

transistor bc 138

Abstract: bc 301 transistor -39 800 1 30 40 120 150 1 0.35 0.15 40 25 BC 139 BC 138 N TO-39 800 1 30 35 â'" 100 10 1.5 1 40 25 _ BC 139 P TO-39 700 0.5 40 40 â'" 100 10 0.8 0.3 â'" 6+ BC 119 BC 140 N TO-39 800 1 40 40 250.1 100 1 1 1 50 25 BC 160 BC 141 N TO-39 800 1 60 40 250* 100 1 1 1 50 25 BC 161 BC 142 N TO-39 800 1 60 20 _ 200 2 0.4 0.2 40 25 BC 143 BC 143 P TO-39 800 1 60 20 â'" 300 1 0.6 0.2 60 20 BC 142 BC 144 N TO-39 800 1 40 20 â'" 300 1 0.6 0.5 100+ 20 â'" BC 160 P TO-39 800 1 40 40 250 # 100 1 1 1 50 30 BC 140 BC 161
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bc 301 transistor transistor Bc 287 bc 303 transistor transistor BC 341 TRANSISTOR BC 345 transistor BC 388 BC119 BC211A BC313A MELF-00 MELF-002

TRANSISTOR BC 534

Abstract: transistor bc 537 ) (MHz) (pF) TYPE BC 432 P TO-92F 625 0.8 60 63 240* 100 1 0.7 0.5 100+ 17+ BC 431 BC 440 N TO-39 1000 1 40 40 250» 500 4 1 1 50 25 BC 460 BC 441 N TO-39 1000 1 60 40 250» 500 4 1 1 50 25 BC 461 BC 445 N TO-92F 625 0.3 60 50 460» 2 5 0.25 0.1 100 3+ BC 446 BC 446 P TO-92F 625 0.3 60 50 460» 2 5 0.25 0.1 100 3+ BC 445 BC 460 P TO-39 1000 1 40 40 250» 500 4 1 1 50 25 BC 440 BC 461 P TO-39 10CKD 1 60 40 250» 5Ã0 4 1 1 50 25 BC 441 BC 485 N TO-92F 625 1 45 60 400» 100 2 0.5 0.5 200+ 7+ BC
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TRANSISTOR BC 534 transistor bc 537 transistor bc 488 transistor 537 b 360 transistor bc 630 TRANSISTOR BC 431

TRANSISTOR BC 384

Abstract: bc 357 transistor ) 'c ImA) BC 251 P TO-92F 300 100 45 125 900 A * 2 5 0.3 10 80 6 10 BC 262 P TO-92F 300 100 25 125 900 At 2 5 0.3 10 80 6 10 BC 253 P TO-92F 300 100 25 125 900â² 1 2 5 0.3 10 80 6 4 BC 256 P TO-92F 300 100 64 125 5001 2 5 0.5 100 130+ 6 10 BC 257 P TO-92B 300 100 45 70 450* 2 5 0.3 10 130 6 10 BC 258 P TO-92B 300 100 25 70 800» 2 5 0.3 10 130 6 10 BC 259 P TO-92B 300 100 20 200 800« 2 5 0.3 10 130 6 4 BC 260 P TO-18 300 100 20 35 600* 1 1 0.4+ 30 100 6 â'" BC 261 P TO-18 300 100 45 125 900A
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TRANSISTOR BC 384 bc 357 transistor transistor BC 336 TRANSISTOR BC 413 transistor BC 310 TRANSISTOR BC 321

transistor BC-108

Abstract: dog 53 201/221; Transistor BC 108 kann bei Beachtung Diode BZ 2/C9V1 entder Stromverstärkung durch den BC 149 , 4403-4248-033-014 Stabilisatorpl., bestückt 35 OO-2 2 15 -O37 -OI7 71. Transistor C 2 N 2195 A 72. Transistor BC 178 A 73. Diode BZP 6870 V 75 74. Transistor BC 109 B 75. Elko 1600 uF, 12V WT 392/70 76. Kondens. 0 , 85. Transistor ADP 671 8332015 8323006 8403102 8343001 7383050 7343051 7303052 7353053 7313054
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dog 53 DIODE BZ DIODE BZp 6870 VEB Kombinat DIODE BZP OA625 III/18/379

bc 301 transistor

Abstract: bc 303 transistor 2N 2894 15 V 2N 914 2N 2368 2N 2369 20 V BC 108 IK BSfe:* 25 V BSX 51 BSX52 BC , general purpose and fast switching transistor selector guide guide de sélection ^ transistors , 2222 A 2N 2906 2N 2907 2N 2218 A 2N 2219 A 2N 2904 2N 2905 BC 211 BSX 45 BC 313 BSV 15 45 V BC 107 BCY 59 BC 177 BCY 79 50 V BSX51 A BSX52 A BSW21 A BSW22 A 2N 16113(1) 2N 17111(1) 60 V BSX52 B 2N 2906 A 2N 2907 A 2N 2904 A 2N 2905 A BC 211 A BSX 46 BC 313 A BSV 16 80 V 2N 1893 2N
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A2N transistor BC 170c transistor TRANSISTOR BC 650 c transistor BSX 82 BC211 transistor transistor BC 56 BSY53 BSY54 2N706
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