BAW56DW - Datasheet Archive

 

SOT-363 Plastic-Encapsulate Diode SOT-363 BAW56DW SWITCHING DIODE FEATURES Power dissipation PD: 200 mW (Tamb=25) Collector

 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diode SOT-363 BAW56DW BAW56DW SWITCHING DIODE FEATURES Power dissipation PD: 200 mW (Tamb=25) Collector current 150 mA IF: Collector-base voltage 75 V VR: Operating and storage junction temperature range TJ, Tstg: -55 to +150 MAKING: KJC ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Reverse breakdown voltage Reverse voltage leakage current Symbol V(BR) R IR unless otherwise specified) Test conditions IR= 2.5µA MIN MAX 75 UNIT V VR=75V 2.5 VR=20V 0.025 715 855 1000 1250 mV 2 pF 4 nS Forward voltage VF IF=1mA IF=10mA IF=50mA IF=150mA Junction capacitance Cj VR=0V, f=1MHz µA IF=IR=10mA Reveres recovery time trr Irr=0.1×IR RL=100 Typical Characteristics BAW56DW BAW56DW