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BAW56T-7-F Diodes Incorporated Rectifier Diode, 2 Element, 0.155A, 85V V(RRM), Silicon, GREEN, ULTRA SMALL, PLASTIC PACKAGE-3 visit Digikey Buy
BAW56-TP Micro Commercial Components Rectifier Diode, 2 Element, 0.25A, 75V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3 visit Digikey Buy
BAW56W-7-F Diodes Incorporated Rectifier Diode, 2 Element, 0.075A, 75V V(RRM), Silicon, GREEN, PLASTIC PACKAGE-3 visit Digikey Buy
BAW56T-TP Micro Commercial Components Rectifier Diode, 2 Element, 0.075A, 85V V(RRM), Silicon, LEAD FREE, ULTRA SMALL, PLASTIC PACKAGE-3 visit Digikey Buy
BAW56T116 ROHM Semiconductor Rectifier Diode, 2 Element, 0.1A, 80V V(RRM), Silicon, SSD3, 3 PIN visit Digikey Buy
BAW56 Atmel Corporation Rectifier Diode, 2 Element, Silicon, TO-236 visit Digikey Buy

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Part : BAW56-7-F Supplier : Diodes Manufacturer : New Advantage Stock : 33,000 Best Price : $0.0165 Price Each : $0.0175
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Part : BAW56TT1G Supplier : ON Semiconductor Manufacturer : Wuhan P&S Stock : 500 Best Price : $0.02 Price Each : $0.04
Part : BAW56W,115 Supplier : NXP Semiconductors Manufacturer : Wuhan P&S Stock : 2,950 Best Price : $0.0102 Price Each : $0.0102
Part : BAW56WT1G Supplier : ON Semiconductor Manufacturer : Wuhan P&S Stock : 2,250 Best Price : $0.02 Price Each : $0.04
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BAW56 Datasheet

Part Manufacturer Description PDF Type
BAW56 Comchip Technology Surface mount switching diode. Original
BAW56 Continental Device India Silicon Planar Epitaxial High Speed Diode Original
BAW56 Diodes DUAL SURFACE MOUNT SWITCHING DIODE Original
BAW56 Diodes Short Form Selection Guide Original
BAW56 Diodes DUAL SURFACE MOUNT SWITCHING DIODE Original
BAW56 Diodes SMD DIODE BAW56 70V Original
BAW56 Diotec Surface Mount Silicon Planar Dual Small-Signal Diodes (common anode) Original
BAW56 EIC Semiconductor High Speed Switching Diodes Original
BAW56 Fairchild Semiconductor High Conductance Ultra Fast Diode Original
BAW56 Fairchild Semiconductor Small Signal Diode Original
BAW56 Fairchild Semiconductor High Conductance Ultra Fast Diode Original
BAW56 Fronter Electronics Rectifier Diode, Switching Diode, Dual Common Anode, 70V, SOT-23, 3-Pin Original
BAW56 General Semiconductor Small Signal Diodes Original
BAW56 Infineon Technologies Silicon Switching Diode Array with common cathode Original
BAW56 Infineon Technologies High Speed Switching Diodes; Package: PG-SOT23-3; Configuration: Dual; V<sub>R</sub> (max): 80.0 V; I<sub>F</sub> (max): 200.0 mA; I<sub>R</sub> (max): 150.0 nA; t<sub>rr</sub> (max): 4.0 ns; Original
BAW56 Kexin Dual Surface Mount Switching Diode Original
BAW56 Micro Commercial Components 350mW 75Volt Dual Switching Diode Original
BAW56 National Semiconductor Diode, High Conductance Ultra Fast Diode Original
BAW56 NXP Semiconductors BAW56 - High-speed switching diodes - Cd max.: 2 pF; Configuration: dual c.a. ; IF max: 215 mA; IFSM max: 4 A; IR max: 500@VR=80V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 90 V Original
BAW56 PanJit Semiconductors SURFACE MOUNT SWITCHING DIODES Original
Showing first 20 results.

BAW56

Catalog Datasheet MFG & Type PDF Document Tags

BAW56

Abstract: ) package 1) · Qualified according AEC Q101 BAW56 BAW56T BAW56W ! BAW56S BAW56U $ # , " " , ! , , , , ! Type BAW56 BAW56S BAW56T BAW56U BAW56W 1Pb-containing Package SOT23 SOT363 SC75 SC74 SOT323 , , double Total power dissipation BAW56, TS 28°C BAW56S, TS 85°C BAW56T, TS 104°C BAW56U, TS 90°C BAW56W , point 1) BAW56 BAW56S BAW56T BAW56U BAW56W 1For Symbol VR VRM IF I FSM Value 80 85 200 4.5 1 0.5 , 7 2007-04-20 BAW56. Permissible Puls Load RthJS = (tp) BAW56W 10 3 Permissible Pulse
Infineon Technologies
Original

smd dual diode code A7

Abstract: nxp Tape and Reel Information [1] BAV756S A7* BAW56 A1* BAW56M S5 BAW56S A1* BAW56T A1 BAW56W , IF BAW56S Ts = 60 °C - 100 mA BAW56T Ts = 90 °C - 75 mA BAW56W , diode Rth(j-a) [1] BAW56 BAW56M BAW56W [2] BAV756S_BAW56_SER_5 Product data sheet 4 , BAW56 - - 360 K/W BAW56S - - 255 K/W BAW56T - - 350 K/W , BAW56 SOT23 - TO-236AB small dual common anode BAW56M SOT883 SC-101 -
-
Original
SC-75 smd dual diode code A7 nxp Tape and Reel Information SMD MARKING CODE 101 SOT23-5 smd diode code A7 BAV756S/SG115 DIODE smd marking A1 SC-88 SC-70

MARKING CODE SOT23 A1S

Abstract: SOt323 marking code 6X configuration · BAW56S / U: For orientation in reel see package information below BAW56 BAW56T BAW56W BAW56S BAW56U $ ! " # , ! , , " , Type BAW56 BAW56S BAW56T BAW56U BAW56W , /W BAW56 360 BAW56S 260 BAW56T 185 BAW56U 240 BAW56W 190 1For , 28°C 330 BAW56S, TS 85°C 250 BAW56T, TS 104°C BAW56U, TS 90°C 250 BAW56W, TS , 2006-01-13 BAW56. Permissible Puls Load RthJS = (tp) Permissible Pulse Load BAW56T IFmax / I
Infineon Technologies
Original
MARKING CODE SOT23 A1S SOt323 marking code 6X A1s sot23 BCW66H SC74 SC75

bav99

Abstract: smd diode marking jc sot23 SMD Switching Diode BAL99/BAV99/BAW56/BAV70 Formosa MS List List , -221906 2008/02/10 2010/11/29 C Page. 8 Formosa MS SMD Switching Diode BAL99/BAV99/BAW56 , otherwise noted) o A PARAMETER SYMBOL Reverse Voltage BAL99 BAV99 VR BAV70 BAW56 , /BAW56/BAV70 Electrical Characteristics (AT T =25 C unless otherwise noted) o A PARAMETER , Current (at V R = 70V, T J =25 OC)BAL99/BAV99/BAW56/BAV70 (at V R = 25V, T J =150 OC)BAL99/BAV99/BAW56
Formosa MS
Original
smd diode marking jc sot23 BAL99/BAV99/BAW56/BAV70 MIL-STD-750D METHOD-2031 MIL-STD-202F METHOD-208 METHOD-1026

BAW56S

Abstract: configuration BAW56 BAW56T BAW56W 3 BAW56S BAW56U 6 5 4 D 3 D 1 D 2 D 1 D 2 D 4 1 2 1 2 3 Type BAW56 BAW56S BAW56T BAW56U BAW56W Package SOT23 SOT363 SC75 SC74 SOT323 , Parameter Junction - soldering point1) BAW56 BAW56S BAW56T BAW56U BAW56W 1For Ptot mW 330 250 250 250 , -10-2004 BAW56. Forward current IF = (T S) BAW56S 250 mA Forward current IF = (T S) BAW56T 250 mA , 4.5 1 0.5 0.75 Unit V mA A Total power dissipation BAW56, TS 28°C BAW56S, TS 85°C BAW56T, TS
Infineon Technologies
Original
Abstract: BAW56. Silicon Switching Diode For high-speed switching applications Common anode configuration #1; #1; BAW56 BAW56T BAW56W BAW56S BAW56U 6 3 4 5 D 3 D 1 D 1 1 D 4 D 2 2 Type BAW56 BAW56S BAW56T* BAW56U BAW56W 1 D 2 2 3 Package SOT23 , °C -65 . 150 Value Unit K/W BAW56 360 BAW56S 260 BAW56T tbd BAW56U , V mW BAW56, TS ≤ 31°C 330 BAW56S, TS ≤ 85°C 250 BAW56T, TS ≤ tbd 250 Infineon Technologies
Original

bav99

Abstract: BAW56 WEITRON BAS16 / BAV70 BAW56 / BAV99 Surface Mount Switching Diode * â'Gâ' Lead(Pb)-Free , BAS16 / BAV70 BAW56 / BAV99 Maximum Ratings (EACH DIODE) Symbol BAS16 75 Forward Current VR , Surge Current @ t=1.0s IFSM 2.0 1.0 Adc Characteristic Reverse Voltage BAW56 BAV99 , Characteristics Reverse Breakdown Voltage BAS16 (IBR=100 µAdc ) BAV70/BAW56/BAV99 Vdc Reverse Voltage Leakage Current VR=75V VR=70V VR=25V, TJ=150 C VR=25V, TJ=150 C BAS16/BAW56/BAV99 BAV70 VR
Weitron
Original
bav70 equivalent
Abstract: compliant) package1) â'¢ Qualified according AEC Q101 BAW56 BAW56W BAW56S BAW56U $ ! " # , ° C -65 . 150 Value Unit K/W BAW56 360 BAW56S 260 BAW56U 240 BAW56W , BAW56S BAW56U BAW56W SOT23 SOT363 SC74 SOT323 common anode double common anode double common , dissipation mW Ptot BAW56, TS ≤ 28° C 330 BAW56S, TS ≤ 85° C 250 BAW56U, TS â , BAW56. Silicon Switching Diode â'¢ For high-speed switching applications â'¢ Common anode Infineon Technologies
Original

BAV99

Abstract: BAW56 WEITRON BAS16 / BAV70 BAW56 / BAV99 Surface Mount Switching Diode SWITCHING DIODE 200-215m , BAS16 / BAV70 BAW56 / BAV99 Maximum Ratings (EACH DIODE) Symbol BAS16 75 Forward Current VR , Surge Current @ t=1.0s IFSM 2.0 1.0 Adc Characteristic Reverse Voltage BAW56 BAV99 , Characteristics Reverse Breakdown Voltage BAS16 (IBR=100 µAdc ) BAV70/BAW56/BAV99 Vdc Reverse Voltage Leakage Current VR=75V VR=70V VR=25V, TJ=150 C VR=25V, TJ=150 C BAS16/BAW56/BAV99 BAV70 VR
Weitron
Original
Diode BAV99 SOT23 BAV99 application Diode bav99 BAV99 SOT 23 DATA SHEET BAW56 A1 SOT 23 a6 diode

BAV756S

Abstract: BAV756S/SG115 status Change notice Supersedes Product data sheet - BAV756S_2 BAW56_4 BAW56S_2 BAW56T_2 , specification - BAV756S_1 BAW56_4 20030325 Product specification - BAW56_3 BAW56S_2 19971021 Product specification - BAW56S_1 BAW56T_2 19971219 Product specification - - BAW56W_4 19990511 Product specification - BAW56W_3 BAV756S_BAW56_SER , Marking code[1] BAV756S A7* BAW56 A1* BAW56M S5 BAW56S A1* BAW56T A1
NXP Semiconductors
Original
BAV756S/G,115 BAW56S/ZLX sot23-4 marking a1 baw56 nxp

A1s sot23

Abstract: A1S diode BAW56. Silicon Switching Diode · For high-speed switching applications · Common anode configuration BAW56 BAW56T BAW56W BAW56S BAW56U $ ! " # , ! , , " , Type BAW56 BAW56S BAW56T BAW56U BAW56W , , ! Package SOT23 SOT363 SC75 SC74 SOT323 , BAW56S 260 BAW56T 185 BAW56U 240 BAW56W 190 1For calculation of RthJA please , 85°C 250 BAW56T, TS 104°C 250 BAW56U, TS 90°C 250 BAW56W, TS 103°C 250
Infineon Technologies
Original
A1S diode diode a1s Marking a1s a1s marking BAW56 application note

smd diode marking jc sot23

Abstract: SMD Switching Diode BAL99/BAV99/BAW56/BAV70 Formosa MS List List , -221906 2008/02/10 2010/11/29 C Page. 8 Formosa MS SMD Switching Diode BAL99/BAV99/BAW56 , VR BAV70 BAW56 UNIT V 70 Forward Current IF Peak Forward Surge Current I FM , Diode BAL99/BAV99/BAW56/BAV70 Electrical Characteristics (AT T =25 C unless otherwise noted) o A , Voltage Leakage Current (at V R = 70V, T J =25 OC)BAL99/BAV99/BAW56/BAV70 (at V R = 25V, T J =150 OC
Formosa MS
Original
DS-221906 METHOD-1038 METHOD-1027 METHOD-1036 JESD22-A102 METHOD-1051

BAW56S

Abstract: A1s sot23 ) package1) · Qualified according AEC Q101 BAW56 BAW56W BAW56S BAW56U $ ! " # , ! , , " , , , ! Type Package Configuration Marking BAW56 BAW56S , mW Ptot BAW56, TS 28°C 330 BAW56S, TS 85°C 250 BAW56U, TS 90°C 250 BAW56W , /W BAW56 360 BAW56S 260 BAW56U 240 BAW56W 190 1For calculation of RthJA , BAW56. Silicon Switching Diode · For high-speed switching applications · Common anode
Infineon Technologies
Original
BCW66

BAW56

Abstract: bav70 BAV70 / BAW56 / BAV99 / BAS16 Diodes Switching diode BAV70 / BAW56 / BAV99 / BAS16 This , -23 zMarking (Type No.) Product name BAV70 BAW56 (Ex.) BAV70 Type No. RA4 RA1 Product name BAV99 BAS16 Type No. RA7 RA6 RA4 zCircuit BAV70 BAW56 BAV99 BAS16 BAV70 / BAW56 / BAV99 , ~+150 Type P / N Type BAV70 BAW56 BAV99 BAS16 N P N N zElectrical characteristics (Ta = , . VR (V) 10 10 10 10 IF (mA) 10 10 10 10 BAV70 BAW56 BAV99 BAS16 zElectrical characteristic
ROHM
Original

baw56

Abstract: application circuit bav99 BAV70 / BAW56 / BAV99 Diodes Switching diode BAV70 / BAW56 / BAV99 This product is available , No. BAV70 RA4 BAW56 RA1 BAV99 RA7 (Ex.) BAV70 RA4 Circuits BAV70 , are available. BAW56 BAV99 0~0.1 0.2Min. BAV70 / BAW56 / BAV99 Diodes Absolute maximum , 75 70 450 - 4 300 150 -55~+150 BAW56 85 70 450 - 4 225 , Capacitance between terminals Reverse current Cond. IF (mA) 1.25 150 BAW56 1.25 BAV99
ROHM
Original
application circuit bav99 bav99 marking Diode bav99 8
Abstract: BAV70 / BAW56 / BAV99 Diodes Switching diode BAV70 / BAW56 / BAV99 This product is available , BAW56 BAV99 (Ex.) BAV70 Type No. RA4 RA1 RA7 zEquivalent circuits BAV70 RA4 BAW56 BAV99 1/3 BAV70 / BAW56 / BAV99 Diodes zAbsolute maximum ratings (Ta=25°C) Type Peak reverse , to +150 -55 to +150 P / N Type BAV70 BAW56 BAV99 N P N zElectrical characteristics (Ta , BAV70 BAW56 BAV99 zElectrical characteristic curves (Ta=25°C) 125 (%) Max. 50 FORWARD CURRENT ROHM
Original

BAW56

Abstract: BAW56 application note DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAW56 High-speed double diode , specification High-speed double diode BAW56 FEATURES DESCRIPTION · Small plastic SMD package The BAW56 consists of two high-speed switching diodes with common anodes, fabricated in planar , and thin-film circuits. 2 MARKING 1 3 TYPE NUMBER MARKING CODE(1) BAW56 3 , Semiconductors Product specification High-speed double diode BAW56 LIMITING VALUES In accordance
Philips Semiconductors
Original
BAW56 Philips MAM206 SCA75

BAV99 DIODES

Abstract: BAV70 BAV70 / BAW56 / BAV99 Diodes Switching diode BAV70 / BAW56 / BAV99 This product is , .) Product name BAV70 BAW56 BAV99 (Ex.) BAV70 Type No. RA4 RA1 RA7 zEquivalent circuits BAV70 RA4 BAW56 BAV99 1/3 BAV70 / BAW56 / BAV99 Diodes zAbsolute maximum ratings (Ta=25°C) Type , 150 -55 to +150 -55 to +150 -55 to +150 P / N Type BAV70 BAW56 BAV99 N P N zElectrical , IF (mA) 10 10 10 BAV70 BAW56 BAV99 zElectrical characteristic curves (Ta=25°C) 125 (%) Max
ROHM
Original
BAV99 DIODES

bav99

Abstract: SOT23 BAW56 BAW56, BAV70, BAV99 Taiwan Semiconductor Small Signal Product 225mW SMD Switching Diode , V, f = 1 MHz BAW56, BAV70 BAV99 IF = IR = 10 mA, RL = 100 â"¦, IRR = 1 mA Document Number , - 6 ns VF IR CJ trr V Version: H14 BAW56, BAV70, BAV99 Taiwan Semiconductor , ) Document Number: DS_S1404011 Version: H14 BAW56, BAV70, BAV99 Taiwan Semiconductor Small Signal , PACKAGE PACKING MARKING CODE BAW56 RF SOT-23 3K / 7" Reel A1 BAV70 RF SOT
Taiwan Semiconductor
Original
SOT23 BAW56 MIL-STD-202 BAV99-B0 BAV99-D0

BAW56

Abstract: BAW56S configuration BAW56 BAW56T BAW56W 3 BAW56S BAW56U 6 5 4 D 3 D 1 D 2 D 1 D 2 D 4 1 2 1 2 3 Type BAW56 BAW56S BAW56T BAW56U BAW56W Package SOT23 SOT363 SC75 SC74 SOT323 , Parameter Junction - soldering point1) BAW56 BAW56S BAW56T BAW56U BAW56W 1For Ptot mW 330 250 250 250 , -10-2004 BAW56. Forward current IF = (T S) BAW56S 250 mA Forward current IF = (T S) BAW56T 250 mA , 4.5 1 0.5 0.75 Unit V mA A Total power dissipation BAW56, TS 28°C BAW56S, TS 85°C BAW56T, TS
Infineon Technologies
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MARKING SOT23 a1s

BAW56

Abstract: SOT-23 marking a1s SMD Switching Diode BAL99/BAV99/BAW56/BAV70 Formosa MS List List , -221906 2008/02/10 2010/11/29 C Page. 8 Formosa MS SMD Switching Diode BAL99/BAV99/BAW56 , VR BAV70 BAW56 UNIT V 70 Forward Current IF Peak Forward Surge Current I FM , Diode BAL99/BAV99/BAW56/BAV70 Electrical Characteristics (AT T =25 C unless otherwise noted) o A , Voltage Leakage Current (at V R = 70V, T J =25 OC)BAL99/BAV99/BAW56/BAV70 (at V R = 25V, T J =150 OC
Infineon Technologies
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SOT-23 marking a1s BAW 56 VPS05161 EHA07006 EHN00019 EHB00089 EHB00090 EHB00091

diode t25 4 a7

Abstract: marking code jg SMD diode DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAW56 High-speed double diode , specification High-speed double diode BAW56 FEATURES DESCRIPTION · Small plastic SMD package The BAW56 consists of two high-speed switching diodes with common anodes, fabricated in planar , and thin-film circuits. 2 MARKING 1 3 TYPE NUMBER MARKING CODE(1) BAW56 3 , Semiconductors Product specification High-speed double diode BAW56 LIMITING VALUES In accordance
Formosa MS
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diode t25 4 a7 marking code jg SMD diode DIODE smd marking A4 marking code JG SMD smd diode A4 diode t25 4 A6 125OC METHOD-1056 METHOD-4066-2 175OC METHOD-1031 METHOD-215

smd code A1t

Abstract: A1t smd BAW56 DUAL SURFACE MOUNT SWITCHING DIODE Features · · · · · · · Fast Switching Speed Surface , Information (Note 4) Part Number BAW56-7-F BAW56-13-F BAW56Q-7-F BAW56Q-13-F Notes: Qualification , 2016 D Nov N 2017 E Dec D BAW56 Document number: DS12008 Rev. 21 - 2 1 of 4 www.diodes.com July 2012 © Diodes Incorporated BAW56 Maximum Ratings (@TA = +25°C, unless otherwise specified , FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics, Per Element BAW56 Document number: DS12008
Philips Semiconductors
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smd code A1t A1t smd smd diode A1T SMD a1T Transistor A1T SMD diode a1t diode

marking code JD BAW56

Abstract: jd sot23 BAW56 DUAL SURFACE MOUNT SWITCHING DIODE Mechanical Data Features â'¢ â'¢ â'¢ â'¢ â , Top View Internal Schematic Top View Ordering Information (Note 4) Part Number BAW56-7-F BAW56-13-F BAW56Q-7-F BAW56Q-13-F Notes: Qualification Commercial Commercial Automotive , : 9 = September) 1999 K 2000 L Feb 2 BAW56 Document number: DS12008 Rev. 21 - 2 â , Nov N 2017 E Dec D July 2012 © Diodes Incorporated BAW56 Maximum Ratings (@TA =
Diodes
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marking code JD BAW56 jd sot23 marking CJD CJD marking diode AEC-Q101 J-STD-020 BAW56-13-F 000/T 2002/95/EC 2011/65/EU
Abstract: BAW56 DUAL SURFACE MOUNT SWITCHING DIODE Please click here to visit our online spice models , Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. BAW56 Document number: DS12008 Rev. 18 - 2 1 of 3 www.diodes.com May 2008 © Diodes Incorporated BAW56 IF, INSTANTANEOUS , . Reverse Voltage, Per Element (Note 5) Part Number BAW56-7-F Notes: 1.6 Case SOT , D BAW56 Document number: DS12008 Rev. 18 - 2 2 of 3 www.diodes.com May 2008 © Diodes Diodes
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