| Datasheet Search Results |
1 - 33 of about 33 for BAW10 |
 |
BAW10 |
Absopulse Electronics |
DC-DC Converter, (10 to 60) V to (-12 / 5|12) V |
130.89 Kb, 1 Pages. |
 |
 |
|
 |
BAW10 |
N/A |
Shortform Data and Cross References (Misc Datasheets) |
31.25 Kb, 1 Pages. |
 |
 |
|
 |
BAW10 |
N/A |
Shortform IC and Component Datasheets (Plus Cross Reference Data) |
92.7 Kb, 1 Pages. |
 |
 |
|
 |
BAW100 |
Central Semiconductor |
SMD Switching Diode Dual |
89.77 Kb, 2 Pages. |
 |
 |
|
 |
BAW100 |
Infineon Technologies |
Silicon Switching Diode Array |
85.21 Kb, 4 Pages. |
 |
 |
|
 |
BAW100 |
Siemens Semiconductors |
Cross Reference Guide 1998 |
26.71 Kb, 7 Pages. |
 |
 |
|
 |
BAW100 |
Siemens Semiconductors |
RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide |
454.72 Kb, 37 Pages. |
 |
 |
|
 |
BAW100 |
Siemens Semiconductors |
Components for Surface Mounting 1983/4 |
47.16 Kb, 1 Pages. |
 |
 |
|
 |
BAW100 |
Siemens Semiconductors |
Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes) |
101.51 Kb, 4 Pages. |
 |
 |
|
 |
BAW100 |
N/A |
Shortform IC and Component Datasheets (Plus Cross Reference Data) |
92.7 Kb, 1 Pages. |
 |
 |
|
 |
BAW100E6327 |
Infineon Technologies |
DIODE SWITCHING 75V 0.2A 4SOT-143 T/R |
85.2 Kb, 4 Pages. |
 |
 |
|
 |
BAW101 |
Central Semiconductor |
DUAL, ISOLATED HIGH VOLTAGE SWITCHING DIODES |
62.09 Kb, 2 Pages. |
 |
 |
|
 |
BAW101 |
Central Semiconductor |
DUAL, ISOLATED HIGH VOLTAGE SWITCHING DIODES |
151.43 Kb, 2 Pages. |
 |
 |
|
 |
BAW101 |
Infineon Technologies |
High Speed Switching Diodes; Package: PG-SOT143-4; Configuration: Dual; VR (max): 300.0 V; IF (max): 250.0 mA; IR (max): 150.0 nA; trr (max): 1,000.0 ns; |
57.44 Kb, 5 Pages. |
 |
 |
|
 |
BAW101 |
Infineon Technologies |
Silicon Switching Diode Array with medium-speed diodes |
30.23 Kb, 3 Pages. |
 |
 |
|
 |
BAW101 |
Infineon Technologies |
Silicon Switching Diode |
426.42 Kb, 3 Pages. |
 |
 |
|
 |
BAW101 |
Philips Semiconductors / NXP Semiconductors |
BAW101, High voltage double diode |
60.29 Kb, 12 Pages. |
 |
 |
|
 |
BAW101 |
Siemens Semiconductors |
Silicon Switching Diode Array (Electrically insulated high-voltage medium-speed diodes) |
61.48 Kb, 3 Pages. |
 |
 |
|
 |
BAW101 |
Siemens Semiconductors |
Cross Reference Guide 1998 |
26.71 Kb, 7 Pages. |
 |
 |
|
 |
BAW101 |
Siemens Semiconductors |
RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide |
454.72 Kb, 37 Pages. |
 |
 |
|
 |
BAW101 |
Siemens Semiconductors |
Components for Surface Mounting 1983/4 |
47.16 Kb, 1 Pages. |
 |
 |
|
 |
BAW101 |
N/A |
Shortform IC and Component Datasheets (Plus Cross Reference Data) |
92.7 Kb, 1 Pages. |
 |
 |
|
 |
BAW101,215 |
NXP Semiconductors / Philips Semiconductors |
High voltage double diode - Cd max.: 2 pF; Configuration: dual isolated ; IF max: 250 mA; IFSM max: 4.5 A; IR max: 150@VR=250V nA; IFRM: 625 mA; trr max: 50 ns; VFmax: 1.1@IF=100mA mV; VR max: 300 V; Package: SOT143B (SOT4); Container: Tape reel smd |
78.22 Kb, 9 Pages. |
 |
 |
|
 |
BAW101E6327 |
Infineon Technologies |
DIODE SWITCHING 300V 0.25A PG-SOT143-4-1 T/R |
57.88 Kb, 5 Pages. |
 |
 |
|
 |
BAW101E6393 |
Infineon Technologies |
DIODE SWITCHING 300V 0.25A PG-SOT143-4-1 T/R |
57.88 Kb, 5 Pages. |
 |
 |
|
 |
BAW101E6433 |
Infineon Technologies |
DIODE SWITCHING 300V 0.25A PG-SOT143-4-1 T/R |
57.88 Kb, 5 Pages. |
 |
 |
|
 |
BAW101E6874 |
Infineon Technologies |
DIODE SWITCHING 300V 0.25A PG-SOT143-4-1 T/R |
57.88 Kb, 5 Pages. |
 |
 |
|
 |
BAW101E8001 |
Infineon Technologies |
DIODE SWITCHING 300V 0.25A PG-SOT143-4-1 T/R |
57.88 Kb, 5 Pages. |
 |
 |
|
 |
BAW101GEG |
Infineon Technologies |
DIODE STANDARD RECOVERY RECTIFIER 300V 0. |
76.07 Kb, 3 Pages. |
 |
 |
|
 |
BAW101S |
Philips Semiconductors / NXP Semiconductors |
High Voltage Double Diode |
61.38 Kb, 12 Pages. |
 |
 |
|
 |
BAW101S,115 |
NXP Semiconductors / Philips Semiconductors |
High voltage double diode - Cd max.: 2 pF; Configuration: dual isolated ; IF max: 250 mA; IFSM max: 4.5 A; IR max: 150@VR=250V nA; IFRM: 625 mA; trr max: 50 ns; VFmax: 1100@IF=100mA mV; VR max: 300 V; Package: SOT363 (SC-88); Container: Tape reel smd |
74.07 Kb, 9 Pages. |
 |
 |
|
 |
BAW101ST/R |
NXP Semiconductors / Philips Semiconductors |
High voltage double diode - Cd max.: 2 pF; Configuration: dual isolated ; IF max: 250 mA; IFSM max: 4.5 A; IR max: 150@VR=250V nA; IFRM: 625 mA; trr max: 50 ns; VFmax: 1100@IF=100mA mV; VR max: 300 V |
74.07 Kb, 9 Pages. |
 |
 |
|
 |
BAW101T/R |
NXP Semiconductors / Philips Semiconductors |
High voltage double diode - Cd max.: 2 pF; Configuration: dual isolated ; IF max: 250 mA; IFSM max: 4.5 A; IR max: 150@VR=250V nA; IFRM: 625 mA; trr max: 50 ns; VFmax: 1.1@IF=100mA mV; VR max: 300 V |
78.22 Kb, 9 Pages. |
 |
 |
|
| |
|