BAV99 BAV99S SC-88 BAV99W SC-70

High-speed switching diodes Rev. 05 - 20 August 2008 Product data sheet 1. Product profile 1.1 General description High-speed

BAV99 BAV99 series High-speed switching diodes Rev. 05 - 20 August 2008 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package Configuration Package configuration NXP JEITA JEDEC BAV99 BAV99 SOT23 - TO-236AB dual series small BAV99S BAV99S SOT363 SC-88 SC-88 - quadruple; 2 series very small BAV99W BAV99W SOT323 SC-70 SC-70 - dual series very small 1.2 Features I High switching speed: trr 4 ns I Low leakage current I Small SMD plastic packages I Low capacitance: Cd 1.5 pF I Reverse voltage: VR 100 V 1.3 Applications I High-speed switching I General-purpose switching I Reverse polarity protection 1.4 Quick reference data Table 2. Symbol Quick reference data Parameter Conditions IR reverse current VR = 80 V VR Min reverse voltage Typ Max Unit Per diode trr [1] reverse recovery time [1] - 0.5 µA - - 100 V - - 4 ns When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA. BAV99 BAV99 series NXP Semiconductors High-speed switching diodes 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol BAV99 BAV99; BAV99W BAV99W 1 anode (diode 1) 2 cathode (diode 2) 3 cathode (diode 1), anode (diode 2) 3 3 1 2 006aaa144 1 2 006aaa763 BAV99S BAV99S 1 anode (diode 1) 2 cathode (diode 2) 3 cathode (diode 3), anode (diode 4) 4 anode (diode 3) 5 cathode (diode 4) 6 cathode (diode 1), anode (diode 2) 6 5 4 1 2 3 6 5 1 2 4 3 006aab101 3. Ordering information Table 4. Ordering information Type number Package Name Description Version BAV99 BAV99 - plastic surface-mounted package; 3 leads SOT23 BAV99S BAV99S SC-88 SC-88 plastic surface-mounted package; 6 leads SOT363 BAV99W BAV99W SC-70 SC-70 plastic surface-mounted package; 3 leads SOT323 4. Marking Table 5. Marking codes Type number Marking code[1] BAV99 BAV99 A7* BAV99S BAV99S K1* BAV99W BAV99W A7* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China BAV99 BAV99_SER_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 - 20 August 2008 2 of 13 BAV99 BAV99 series NXP Semiconductors High-speed switching diodes 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode VRRM repetitive peak reverse voltage - 100 V VR reverse voltage - 100 V IF forward current [1] - 215 mA [2] - 125 mA BAV99S BAV99S [1] - 200 mA BAV99W BAV99W [1] - 150 mA BAV99 BAV99 [2] IFRM IFSM non-repetitive peak forward current square wave - 130 mA - repetitive peak forward current 500 mA [3] tp = 1 µs - 4 A tp = 1 ms - 1 A - 0.5 A tp = 1 s [1][4] total power dissipation Ptot BAV99 BAV99 Tamb 25 °C BAV99S BAV99S Tamb 85 °C BAV99W BAV99W Tamb 25 °C [5] 250 mW - 250 mW - 200 mW Per device Tj junction temperature - 150 °C Tamb ambient temperature -65 +150 °C Tstg storage temperature -65 +150 °C [1] Single diode loaded. [2] Double diode loaded. [3] Tj = 25 °C prior to surge. [4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [5] Soldering points at pins 2, 3, 5 and 6. BAV99 BAV99_SER_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 - 20 August 2008 3 of 13 BAV99 BAV99 series NXP Semiconductors High-speed switching diodes 6. Thermal characteristics Table 7. Symbol Thermal characteristics Typ Max Unit - - 500 K/W BAV99W BAV99W Rth(j-sp) Min BAV99 BAV99 Rth(j-a) Parameter Conditions - - 625 K/W - - 360 K/W - - 260 K/W - - 300 K/W thermal resistance from junction to ambient in free air [1][2] thermal resistance from junction to solder point BAV99 BAV99 [3] BAV99S BAV99S BAV99W BAV99W [1] Single diode loaded. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Soldering points at pins 2, 3, 5 and 6. 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit forward voltage IF = 1 mA - - 715 mV IF = 10 mA - - 855 mV IF = 50 mA - - 1 V IF = 150 mA - - 1.25 V VR = 25 V - - 30 nA Per diode VF IR reverse current VR = 80 V diode capacitance - 0.5 µA - - 30 µA VR = 80 V; Tj = 150 °C Cd - VR = 25 V; Tj = 150 °C - - 50 µA f = 1 MHz; VR = 0 V - trr reverse recovery time [1] VFR forward recovery voltage [2] - 1.5 pF - - 4 ns - - 1.75 V [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA. [2] When switched from IF = 10 mA; tr = 20 ns. BAV99 BAV99_SER_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 - 20 August 2008 4 of 13 BAV99 BAV99 series NXP Semiconductors High-speed switching diodes 006aab132 103 006aab133 (1) 1 IF (mA) 102 IR (µA) 10 (2) 102 10-1 10 (3) 10-2 (1) (2) (3) 10-3 (4) 1 10-4 (4) 10-5 10-1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 1.4 VF (V) 20 40 60 80 100 VR (V) (1) Tamb = 150 °C (1) Tamb = 150 °C (2) Tamb = 85 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (3) Tamb = 25 °C (4) Tamb = -40 °C (4) Tamb = -40 °C Fig 1. Forward current as a function of forward voltage; typical values mbg446 0.8 Cd (pF) Fig 2. Reverse current as a function of reverse voltage; typical values mbg704 102 IFSM (A) 0.6 10 0.4 1 0.2 10-1 0 0 4 8 12 VR (V) 1 16 10 102 103 104 tp (µs) f = 1 MHz; Tamb = 25 °C Based on square wave currents. Tj = 25 °C; prior to surge Fig 3. Diode capacitance as a function of reverse voltage; typical values Fig 4. Non-repetitive peak forward current as a function of pulse duration; maximum values BAV99 BAV99_SER_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 - 20 August 2008 5 of 13 BAV99 BAV99 series NXP Semiconductors High-speed switching diodes 8. Test information tr tp t D.U.T. 10 % + IF IF RS = 50 SAMPLING OSCILLOSCOPE V = VR + IF × RS trr t Ri = 50 (1) 90 % VR mga881 input signal output signal (1) IR = 1 mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle = 0.05 Oscilloscope: rise time tr = 0.35 ns Fig 5. Reverse recovery time test circuit and waveforms I 1 k RS = 50 D.U.T. 450 I V 90 % OSCILLOSCOPE VFR Ri = 50 10 % t tr t tp input signal output signal mga882 Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp 100 ns; duty cycle 0.005 Fig 6. Forward recovery voltage test circuit and waveforms BAV99 BAV99_SER_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 - 20 August 2008 6 of 13 BAV99 BAV99 series NXP Semiconductors High-speed switching diodes 9. Package outline 3.0 2.8 2.2 1.8 1.1 0.9 6 3 1.1 0.8 5 2 0.45 0.15 4 3 0.45 0.15 2.2 1.35 2.0 1.15 2.5 1.4 2.1 1.2 1 2 1 0.48 0.38 1.9 0.15 0.09 0.25 0.10 0.3 0.2 0.65 1.3 Dimensions in mm Fig 7. pin 1 index Dimensions in mm 04-11-04 Package outline BAV99 BAV99 (SOT23/TO-236AB) Fig 8. 06-03-16 Package outline BAV99S BAV99S (SOT363/SC-88) 2.2 1.8 1.1 0.8 0.45 0.15 3 2.2 1.35 2.0 1.15 1 2 0.4 0.3 0.25 0.10 1.3 Dimensions in mm Fig 9. 04-11-04 Package outline BAV99W BAV99W (SOT323/SC-70) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 10000 BAV99 BAV99 SOT23 4 mm pitch, 8 mm tape and reel -215 -235 BAV99S BAV99S SOT323 4 mm pitch, 8 mm tape and reel SOT363 -135 4 mm pitch, 8 mm tape and reel; T1 -115 -135 4 mm pitch, 8 mm tape and reel; T2 BAV99W BAV99W -115 [2] [3] -125 -165 [1] For further information and the availability of packing methods, see Section 14. [2] T1: normal taping [3] T2: reverse taping BAV99 BAV99_SER_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 - 20 August 2008 7 of 13 BAV99 BAV99 series NXP Semiconductors High-speed switching diodes 11. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 10. Reflow soldering footprint BAV99 BAV99 (SOT23/TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 11. Wave soldering footprint BAV99 BAV99 (SOT23/TO-236AB) BAV99 BAV99_SER_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 - 20 August 2008 8 of 13 BAV99 BAV99 series NXP Semiconductors High-speed switching diodes 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig 12. Reflow soldering footprint BAV99S BAV99S (SOT363/SC-88) 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 1.3 preferred transport direction during soldering 2.45 5.3 sot363_fw Fig 13. Wave soldering footprint BAV99S BAV99S (SOT363/SC-88) BAV99 BAV99_SER_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 - 20 August 2008 9 of 13 BAV99 BAV99 series NXP Semiconductors High-speed switching diodes 2.65 1.85 1.325 solder lands solder resist 2 2.35 0.6 (3×) 3 solder paste 1.3 1 occupied area 0.5 (3×) Dimensions in mm 0.55 (3×) sot323_fr Fig 14. Reflow soldering footprint BAV99W BAV99W (SOT323/SC-70) 4.6 2.575 1.425 (3×) solder lands solder resist occupied area 1.8 3.65 2.1 09 (2×) Dimensions in mm preferred transport direction during soldering sot323_fw Fig 15. Wave soldering footprint BAV99W BAV99W (SOT323/SC-70) BAV99 BAV99_SER_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 - 20 August 2008 10 of 13 BAV99 BAV99 series NXP Semiconductors High-speed switching diodes 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BAV99 BAV99_SER_5 20080820 Product data sheet - BAV99 BAV99_4 BAV99S BAV99S_3 BAV99W BAV99W_4 · The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. · · · · · · · · Legal texts have been adapted to the new company name where appropriate. · · · · · · Modifications: Table 8 "Characteristics": change of IR condition VR from 75 V to 80 V for Tj = 150 °C Section 1.1 "General description": amended Table 1 "Product overview": added Table 2 "Quick reference data": added Table 6 "Limiting values": change of VRRM maximum value from 85 V to 100 V Table 6 "Limiting values": change of VR maximum value from 75 V to 100 V Table 8 "Characteristics": change of IR condition VR from 75 V to 80 V for Tj = 25 °C Table 8 "Characteristics": change of IR maximum value from 1 µA to 0.5 µA for VR = 80 V and Tj = 25 °C condition Section 8 "Test information": added Figure 7, 8 and 9: superseded by minimized package outline drawings Section 10 "Packing information": added Section 11 "Soldering": added Section 13 "Legal information": updated BAV99 BAV99_4 20011015 Product specification - BAV99 BAV99_3 BAV99S BAV99S_3 20010514 Product specification - BAV99S BAV99S_N_2 BAV99W BAV99W_4 19990511 Product specification - BAV99W BAV99W_3 BAV99 BAV99_SER_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 - 20 August 2008 11 of 13 BAV99 BAV99 series NXP Semiconductors High-speed switching diodes 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft - The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet - A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General - Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes - NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use - NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications - Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values - Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale - NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license - Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data - The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BAV99 BAV99_SER_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 - 20 August 2008 12 of 13 BAV99 BAV99 series NXP Semiconductors High-speed switching diodes 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information. . . . . . . . . . . . . . . . . . . . . . 7 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 20 August 2008 Document identifier: BAV99 BAV99_SER_5