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Part Manufacturer Description Datasheet BUY
BAV70W,135 Nexperia BAV70 series - High-speed switching diodes SC-70 3-Pin visit Digikey Buy
BAV70,235 Nexperia BAV70 series - High-speed switching diodes TO-236 3-Pin visit Digikey Buy
BAV70M,315 Nexperia BAV70 series - High-speed switching diodes DFN 3-Pin visit Digikey Buy
BAV70,215 Nexperia BAV70 series - High-speed switching diodes TO-236 3-Pin visit Digikey Buy
BAV70W,115 Nexperia BAV70 series - High-speed switching diodes SC-70 3-Pin visit Digikey Buy
BAV70S,115 Nexperia BAV70 series - High-speed switching diodes TSSOP 6-Pin visit Digikey Buy

BAV70 ON

Catalog Datasheet MFG & Type PDF Document Tags

bav70

Abstract: BAV70 / BAV74 Discrete POWER & Signal Technologies N at ion al Semiconductor BAV70 / 74 CONNECTION DIAGRAMS 0 0 MARKING BAV70 A4 BAV74 JA High Conductance Ultra Fast , mA Average Rectified Current BAV70 BAV74 If DC Forward Current 600 mA if , ratings are based on a maximum junction temperature of 150 degrees C. 2 ) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
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BAV70/74

BAV70

Abstract: DIODE smd marking A4 SOT363 BAV70 series High-speed switching diodes Rev. 07 - 27 November 2007 Product data sheet 1 , configuration Configuration NXP JEITA JEDEC BAV70 SOT23 - TO-236AB small dual common , ; measured at IR = 1 mA. BAV70 series NXP Semiconductors High-speed switching diodes 2. Pinning information Table 3. Pinning Pin Description Simplified outline Symbol BAV70; BAV70T , Package Name Description Version BAV70 - plastic surface-mounted package; 3 leads SOT23
NXP Semiconductors
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BAV70M SC-101 BAV70S SC-75 BAV70W DIODE smd marking A4 SOT363 BAV705 smd marking A4 SOT363 BAV70 NXP sot23-4 jt BAV70T,115 SC-88

BAV70

Abstract: BAV74 BAV70 / BAV74 Discrete POWER & Signal Technologies N BAV70 / 74 3 1 2 SOT-23 1 CONNECTION DIAGRAMS A4 3 3 2 MARKING A4 BAV74 BAV70 1 JA 2 High Conductance , TJ BAV70 BAV74 Operating Junction Temperature *These ratings are limiting values above , based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal
National Semiconductor
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1JA2 BAV70 ON a433 diode bav70

BAV70S

Abstract: BAV70 INFINEON BAV70. Silicon Switching Diode · For high-speed switching applications · Common cathode configuration BAV70 BAV70F BAV70L3 BAV70T BAV70W 3 BAV70S BAV70U 6 5 4 D 3 D 1 D 2 D 1 D 2 D 4 1 2 1 2 3 Type BAV70 BAV70F* BAV70L3 * BAV70S BAV70T BAV70U BAV70W , cathode common cathode Marking A4s A4s A4 A4s A4s A4s A4s 1 Mar-10-2004 BAV70. Maximum , Total power dissipation BAV70, T S 33°C BAV70F, TS tbd BAV70L3, TS tbd BAV70S, TS 85°C BAV70T, TS
Infineon Technologies
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BAV70 INFINEON

BAV70

Abstract: BAV74 " BAV70 / 74 High Conductance Ultra Fast Diode Sourced from Process 1 P. See BAV99 for characteristics , any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on , otherwise noted Symbol Characteristic Max Units BAV70/74 Pd Total Device Dissipation Derate above 25Â , Min Max Units Bv Breakdown Voltage BAV70 BAV74 IR = 100HA IR = 100 uA 70 50 V V I* Reverse Current
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SQ113Q 5D1130 0040S50

bav99

Abstract: smd diode marking jc sot23 SMD Switching Diode BAL99/BAV99/BAW56/BAV70 Formosa MS List List , /BAV70 225mW Surface Mount Switching Diode- 70V Package outline Features (B) (C) (A , otherwise noted) o A PARAMETER SYMBOL Reverse Voltage BAL99 BAV99 VR BAV70 BAW56 , /BAW56/BAV70 Electrical Characteristics (AT T =25 C unless otherwise noted) o A PARAMETER , Current (at V R = 70V, T J =25 OC)BAL99/BAV99/BAW56/BAV70 (at V R = 25V, T J =150 OC)BAL99/BAV99/BAW56
Formosa MS
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smd diode marking jc sot23 BAL99/BAV99/BAW56/BAV70 MIL-STD-750D METHOD-2031 MIL-STD-202F METHOD-208 METHOD-1026

BAV70

Abstract: MAM383 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV70 High-speed double diode , specification High-speed double diode BAV70 FEATURES PINNING · Small plastic SMD package PIN , circuits. handbook, halfpage 3 3 DESCRIPTION 1 The BAV70 consists of two high-speed switching , plastic SMD package. 1 Top view 2 2 MAM383 MARKING TYPE NUMBER BAV70 MARKING CODE(1 , High-speed double diode BAV70 LIMITING VALUES In accordance with the Absolute Maximum Rating System
Philips Semiconductors
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A2 DIODE SMD CODE MARKING SMD DIODE A4 data SCA74

A2 DIODE SMD CODE MARKING

Abstract: MAM383 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV70 High-speed double diode , specification High-speed double diode FEATURES BAV70 MARKING · Small plastic SMD package TYPE , . MARKING CODE(1) PIN 1 anode (a1) BAV70 · High switching speed: max. 4 ns · Continuous , DESCRIPTION The BAV70 consists of two high-speed switching diodes with common cathodes, fabricated in , temperature -65 +150 °C Tj junction temperature - 150 °C Note 1. Device mounted on
Philips Semiconductors
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DIODE smd marking A1 smd diode A4 smd diode code A4 marking code 10 sot23 marking CODE R SMD DIODE smd diode marking code SCA73
Abstract: BAV70 / BAV74 _ _ ,_ _ u, _ Ml C O N D U C T O R T M D iscrete POWER & S ig n a l 1 ecnnologies BAV70 / 74 P H CONNECTION DIAGRAMS T D S O T -2 3 BAV70 E T JA MARKING A4 BAV74 , Operating Junction Temperature BAV70 BAV74 Value 70 50 200 600 700 1.0 2.0 -55 to +150 150 Units V V , ratings are based on a m axim u m ju n ctio n te m p e ra tu re o f 150 d e g re es C. 2 ) T h e se are stea d y sta te lim its. T h e fa cto ry shou ld be co nsu lted on a pp lica tio ns in volving pulse d -
OCR Scan
Abstract: BAV70. Silicon Switching Diode â'¢ For high-speed switching applications â'¢ Common cathode , compliant) package1) â'¢ Qualified according AEC Q101 BAV70 BAV70W BAV70S BAV70U $ ! " # , ! , #31; , " , , #31; #31; #31; , ! Type Package Configuration Marking BAV70 , special request 1 2007-09-19 BAV70. Maximum Ratings at TA = 25° unless otherwise specified C , dissipation mW Ptot BAV70, TS ≤ 33° C 250 BAV70S, TS ≤ 85° C 250 BAV70U, TS â Infineon Technologies
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smd diode marking jc sot23

Abstract: SMD Switching Diode BAL99/BAV99/BAW56/BAV70 Formosa MS List List , /BAV70 225mW Surface Mount Switching Diode- 70V Features Package outline â'¢ Fast speed , VR BAV70 BAW56 UNIT V 70 Forward Current IF Peak Forward Surge Current I FM , Diode BAL99/BAV99/BAW56/BAV70 Electrical Characteristics (AT T =25 C unless otherwise noted) o A , Voltage Leakage Current (at V R = 70V, T J =25 OC)BAL99/BAV99/BAW56/BAV70 (at V R = 25V, T J =150 OC
Formosa MS
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DS-221906 METHOD-1038 METHOD-1027 METHOD-1036 JESD22-A102 METHOD-1051

BAV99 DIODES

Abstract: BAV70 BAV70 / BAW56 / BAV99 Diodes Switching diode BAV70 / BAW56 / BAV99 This product is , .) Product name BAV70 BAW56 BAV99 (Ex.) BAV70 Type No. RA4 RA1 RA7 zEquivalent circuits BAV70 RA4 BAW56 BAV99 1/3 BAV70 / BAW56 / BAV99 Diodes zAbsolute maximum ratings (Ta=25°C) Type , 150 -55 to +150 -55 to +150 -55 to +150 P / N Type BAV70 BAW56 BAV99 N P N zElectrical , IF (mA) 10 10 10 BAV70 BAW56 BAV99 zElectrical characteristic curves (Ta=25°C) 125 (%) Max
ROHM
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BAV99 DIODES

BAV70 ON

Abstract: BAV70 BAV70/74 SENSITRON SEMICONDUCTOR SMALL SIGNAL SWITCHING DIODE Data Sheet 2771, Rev. - , VRRM VRWM VR 50 BAV74 70 BAV70 V Forward Continuous Current (Note 1) IF 200 , 70(BAV70) 50(BAV74) - V Forward Voltage VF - 1.0(BAV70) 150(BAV74) V @ IF = 50mA (BAV70) @ IF = 100mA (BAV74) Reverse Leakage Current IR - 5.0(BAV70) 100(BAV74) µA @ VR = 70V (BAV70) @ VR = 50V (BAV74) Junction Capacitance Cj - 1.5(BAV70) 2.0
Sensitron Semiconductor
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MIL-STD-202

marking code a4s

Abstract: SOt323 marking code 6X BAV70. Silicon Switching Diode · For high-speed switching applications · Common cathode , ) package1) · Qualified according AEC Q101 BAV70 BAV70W BAV70S BAV70U $ ! " # , ! , , " , , , ! Type Package Configuration Marking BAV70 BAV70S , request 1 2007-09-19 BAV70. Maximum Ratings at TA = 25°C, unless otherwise specified , dissipation mW Ptot BAV70, TS 33°C 250 BAV70S, TS 85°C 250 BAV70U, TS 90°C 250
Infineon Technologies
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marking code a4s SOt323 marking code 6X sot363 marking DATE code A4S - BAV70 diode a4s BCW66H

bav70 sot363

Abstract: BAV70. Silicon Switching Diode · For high-speed switching applications · Common cathode , ) package 1) · Qualified according AEC Q101 BAV70 BAV70T BAV70W ! BAV70S BAV70U $ # , " " , ! , , , , ! Type BAV70 BAV70S BAV70T BAV70U BAV70W 1Pb-containing Package SOT23 SOT363 SC75 SC74 SOT323 , Marking A4s A4s A4 A4s A4s package may be available upon special request 1 2007-04-20 BAV70 , double Total power dissipation BAV70, T S 33°C BAV70S, TS 85°C BAV70T, TS 73°C BAV70U, TS 90°C BAV70W
Infineon Technologies
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bav70 sot363

BAV70

Abstract: BAV74 '" BAV70 / 74 High Conductance Ultra Fast Diode Sourced from Process 1 P. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units WIV Working Inverse Voltage BAV70 70 V , device may be impaired. NOTES: 1)These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving , Characteristic Max Units BAV70/74 Pd Total Device Dissipation 350 mW Derate above 25°C 2.8 mW/°C Rsja
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bav70

Abstract: BAV74 BAV70 / BAV74 tß National Semiconductor" Discrete POWER & Signal Technologies BAV70 , Junction Temperature BAV70 BAV74 Value 70 50 200 600 700 1.0 2.0 -55 to +150 150 Units V V mA mA mA , serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum , on applications Involving pulsed or iow duty cycle operations. Thermal Characteristics Symbol Pd , °C Thermal Resistance, Junction to Ambient Max BAV70/74 350 2.8 357 Units mW mW/°C °C/W h S Q l l
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BAV70

Abstract: BAV74 BAV70 / 74 BAV70 / 74 Connection Diagram 3 3 A4 2 1 1 BAV70 SOT-23 3 2 , Range TJ BAV70 BAV74 Operating Junction Temperature * These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on a , consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol , Voltage BAV70 IR Reverse Leakage BAV70 BAV70 BAV74 BAV74 BAV74 Test Conditions
Fairchild Semiconductor
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smd diode A4

Abstract: DIODE smd marking A4 BAW56, BAV70, BAV99 225mW SMD Switching Diode Small Signal Diode SOT-23 A Features F B , compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code Unit (mm) Min Max , Pin Configuration BAW5 BAV70 Ordering Information Package BAV99 Suggested PAD Layout , -23 BAV70 RF 3K / 7" Reel A4 SOT-23 BAV99 RF 3K / 7" Reel A7 SOT-23 BAW56 RFG 3K / 7" Reel A1 SOT-23 BAV70 RFG 3K / 7" Reel A4 SOT-23 BAV99 RFG 3K / 7" Reel A7 2.0
Taiwan Semiconductor
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DIODE smd marking A4 smd diode a7 smd diode marking A7 SOT-23 a4 sot-23 DIODE SMD A4 smd code A7

BAV70

Abstract: BAV74 BAV70 / BAV74 BAV70 / 74 3 Connection Diagram 3 A4 2 1 1 SOT-23 3 2 MARKING A4 BAV74 BAV70 1 2 JA Small Signal Diode Absolute Maximum Ratings* Symbol VRRM , +150 A A °C 150 °C Value Maximum Repetitive Reverse Voltage Units Units BAV70 , semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications
Fairchild Semiconductor
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