NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: STPS2L60A STPS2L60A 20 1 D14 BAV70 On Semiconductor BAV70E6327 BAV70E6327 21 6 GTP1, GTP2, GTP3, GTP4 , , place it on an antic-static pad to reduce the possibility of ESD damage. 5.2 Wear an , Connection Connect a serial cable (RS232 RS232 on P1) to a host PC (see Figure 2). On a host PC running , Power ON the board (plug the jack of the AC/Adapter on J26). A sequence of boot messages is displayed, followed by the Linux console prompt. For more information, refer to the UM0844 UM0844 available on www.st.com ... | Original |
29 pages, |
XCF32P con50a 10UF 50V Rubycon SW-DIP-4 Xilinx usb2 cable Schematic BCR112E6327 1-1634688-0 Micron MT47H64M16HR-3 IT LD1117-1.8 MSS6132-682MLC JK065401NL omron c200 XCF32PVOG48C UM0805 UM0805 abstract |
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| Abstract: STPS2L60 STPS2L60 STM STPS2L60A STPS2L60A 20 1 D14 BAV70 On Semiconductor BAV70E6327 BAV70E6327 21 6 , , place it on an antic-static pad to reduce the possibility of ESD damage. 5.2 Wear an , Connection Connect a serial cable (RS232 RS232 on P1) to a host PC (see Figure 2). On a host PC running , Power ON the board (plug the jack of the AC/Adapter on J26). A sequence of boot messages is displayed, followed by the Linux console prompt. For more information, refer to the UM0844 UM0844 available on www.st.com ... | Original |
29 pages, |
jk065401nl DB9 omron MT47H64M16HR-3 IT con50a con20a C20 OMRON Operation Manual OMRON C20 omron c200 BLM18AG102 SFM-125-02-S-D BCR112E6327 M25P64 yk Rubycon MT47H64M16HR-3E IT UM0805 UM0805 abstract |
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| Abstract: BAV70 / BAV74 BAV74 Discrete POWER & Signal Technologies N BAV70 / 74 3 1 2 SOT-23 1 CONNECTION DIAGRAMS A4 3 3 2 MARKING A4 BAV74 BAV74 BAV70 1 JA 2 High Conductance , TJ BAV70 BAV74 BAV74 Operating Junction Temperature *These ratings are limiting values above , based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal ... | Original |
2 pages, |
BAV70 diode bav70 BAV74 BAV70 ON BAV70 abstract |
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| Abstract: > < CÛ o r» > < CÛ (9 Discrete POWER & Signal National Technologies Semiconductor'" BAV70 , unless otherwise noted Symbol Parameter Value Units WIV Working Inverse Voltage BAV70 70 V BAV74 BAV74 50 , device may be impaired. NOTES: 1)These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving , Characteristic Max Units BAV70/74 Pd Total Device Dissipation 350 mW Derate above 25°C 2.8 mW/°C Rsja ... | OCR Scan |
2 pages, |
diode bav70 BAV74 BAV70 ON BAV70 BAV70 abstract |
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| Abstract: r^. > < m o h> < ID (9 Discrete POWER & Signal National Technologies Semiconductor" BAV70 , any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on , noted Symbol Characteristic Max Units BAV70/74 Pd Total Device Dissipation Derate above 25°C 350 , Bv Breakdown Voltage BAV70 BAV74 BAV74 IR = 100HA 100HA IR = 100 uA 70 50 V V I* Reverse Current BAV70 BAV74 BAV74 VR ... | OCR Scan |
2 pages, |
diode bav70 BAV99 BAV74 BAV70 ON BAV70 datasheet abstract |
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| Abstract: BAV70 / 74 3 3 1 2 SOT-23 CONNECTION DIAGRAMS A4 3 1 2 MARKING A4 BAV74 BAV74 BAV70 1 JA 2 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 BAV99 , Inverse Voltage IO IF BAV70 BAV74 BAV74 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum , on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD ... | Original |
3 pages, |
BAV99 BAV74 BAV70 BAV70 abstract |
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| Abstract: BAV70 / BAV74 BAV74 BAV70 / 74 3 Connection Diagram 3 A4 2 1 1 SOT-23 3 2 MARKING A4 BAV74 BAV74 BAV70 1 2 JA Small Signal Diode Absolute Maximum Ratings* Symbol VRRM , +150 A A °C 150 °C Value Maximum Repetitive Reverse Voltage Units Units BAV70 , semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications ... | Original |
2 pages, |
BAV74 BAV70 BAV70 abstract |
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| Abstract: BAV70 / 74 BAV70 / 74 Connection Diagram 3 3 A4 2 1 1 BAV70 SOT-23 3 2 , Range TJ BAV70 BAV74 BAV74 Operating Junction Temperature * These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on a , consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol , Voltage BAV70 IR Reverse Leakage BAV70 BAV70 BAV74 BAV74 BAV74 BAV74 BAV74 BAV74 Test Conditions ... | Original |
2 pages, |
BAV74 BAV70 BAV70 abstract |
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| Abstract: Recover Time Trr* 6ns *Small Outline Surface Mount SOT-23 Package BAS 16 / BAV70 BAW56 BAW56 / BAY 99 , ) Characteristic Symbol BAS 16 BAV70 RAW 56 BAVW Unit Reverse Voltage VR 75 70 Volts Forward Current IF 200 215 , Characteristics Reverse Breakdown Voltage BAS16 BAS16 (lBR=100pAdC ) BAV70/BAW56/BAV99 VBR 75 70 Vdc Reverse Voltage Leakage Current VR=75V BAS16 BAS16 VR=70V BAV70/BAW56/BAV99 1.0 2.5 VR=25V, TJ=150°C BAS16/BAW56/BAV99 BAS16/BAW56/BAV99 VR=25V,TJ=150°C BAV70 IR 30.0 60.0 pAdc VR=75V, TJ=150°C BAS16 BAS16 Vr=70V, TJ=150°C BAW56/BAV99 BAW56/BAV99 ... | OCR Scan |
1 pages, |
MJ marking sot23 BAW56 BAV99 BAV70 BAS16 Diode BAV99 SOT23 BAV70 abstract |
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| Abstract: BAV70 BAV70 Surface Mount Small Signal Double-Diodes Kleinsignal-Doppel-Dioden für die , BAV70 Power dissipation - Verlustleistung 1) Ptot 310 mW 2) Max. average forward current (dc , on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag , 300 us, Schaltverhältnis 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 BAV70 , A2 BAV70 = A4 3 = C1/C2 10 120 [%] [A] 100 1 80 Tj = 125°C 60 10-1 40 ... | Original |
2 pages, |
BAV70 BAV70 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| : "awbbav70" *b Device model created by analog_uprev for bav70 on Tue Feb 6 11:00:11 IST 2001 .subckt *$ model description: "awb1s2837" *b Device model created by analog_uprev for 1s2837 on Tue Feb 6 : "awb1s2837" * * *$ model description: "awb1s2838" *b Device model created by analog_uprev for 1s2838 on : "awb1s2838" * * *$ model description: "awb1ss184" *b Device model created by analog_uprev for 1ss184 on " * * *$ model description: "awb60cnq030" *b Device model created by analog_uprev for 60cnq030 on Tue Feb 6 11 www.datasheetarchive.com/files/spicemodels/misc/dih.lib |
Spice Models | 15/06/2001 | 52.67 Kb | LIB | dih.lib |
| * * * *BAV70M * *NXP Semiconductors * *High-speed switching diode * * * * * * * * * * * *VRRM = 100V *IFRM = 500mA @ tp = *trr = 4ns * * *# * Please note: This device is an array and the * symbol has to be placed twice on the schematic * .SUBCKT BAV70M 1 2 * * The resistor R1 does not reflect * a physical device. Instead it * improves modeling in the reverse * mode of operation. * R1 1 2 6.9E+9 D1 1 2 BAV70M * .MODEL BAV70M D + IS www.datasheetarchive.com/download/52977079-596978ZC/71536.zip (BAV70M.prm) |
NXP | 23/10/2012 | 463.29 Kb | ZIP | 71536.zip |
| * * * *BAV70 * *NXP Semiconductors * *High * * *# * Please note: This device is an array and the * symbol has to be placed twice on the schematic * .SUBCKT BAV70 1 2 * * The resistor R1 and the diode D2 do not reflect * physical devices. Instead they * improve modeling in the reverse * mode of operation. * R1 1 2 5E+009 D1 1 2 BAV70 * .MODEL BAV70 D + IS = 3.2E-009 2E-009 2E-009 2E-009 + N = 1.85 + BV = 125.9 + IBV = 2.906E-007 906E-007 906E-007 906E-007 www.datasheetarchive.com/download/52977079-596978ZC/71536.zip (BAV70.prm) |
NXP | 23/10/2012 | 463.29 Kb | ZIP | 71536.zip |
| * * * *BAV70T * *NXP Semiconductors * *High * * *# * Please note: This device is an array and the * symbol has to be placed twice on the schematic * .SUBCKT BAV70T 1 2 * * The resistor R1 and the diode D2 do not reflect * physical devices. Instead they * improve modeling in the reverse * mode of operation. * R1 1 2 5E+009 D1 1 2 BAV70T * .MODEL BAV70T D + IS = 3.2E-009 2E-009 2E-009 2E-009 + N = 1.85 + BV = 125.9 + IBV = 2.906E-007 906E-007 906E-007 906E-007 www.datasheetarchive.com/download/52977079-596978ZC/71536.zip (BAV70T.prm) |
NXP | 23/10/2012 | 463.29 Kb | ZIP | 71536.zip |
| * * * *BAV70M * *NXP Semiconductors * *High-speed switching diode * * * * * * * * * * * *VRRM = 100V *IFRM = 500mA @ tp = *trr = 4ns * * *# * Please note: This device is an array and the * symbol has to be placed twice on the schematic * .SUBCKT BAV70M 1 2 * * The resistor R1 does not reflect * a physical device. Instead it * improves modeling in the reverse * mode of operation. * R1 1 2 6.9E+9 D1 1 2 BAV70M * .MODEL BAV70M D + IS www.datasheetarchive.com/download/83020311-596964ZC/41738.zip (BAV70M.prm) |
NXP | 23/10/2012 | 56.27 Kb | ZIP | 41738.zip |
| * * * *BAV70 * *NXP Semiconductors * *High * * *# * Please note: This device is an array and the * symbol has to be placed twice on the schematic * .SUBCKT BAV70 1 2 * * The resistor R1 and the diode D2 do not reflect * physical devices. Instead they * improve modeling in the reverse * mode of operation. * R1 1 2 5E+009 D1 1 2 BAV70 * .MODEL BAV70 D + IS = 3.2E-009 2E-009 2E-009 2E-009 + N = 1.85 + BV = 125.9 + IBV = 2.906E-007 906E-007 906E-007 906E-007 www.datasheetarchive.com/download/83020311-596964ZC/41738.zip (BAV70.prm) |
NXP | 23/10/2012 | 56.27 Kb | ZIP | 41738.zip |
| * * * *BAV70T * *NXP Semiconductors * *High * * *# * Please note: This device is an array and the * symbol has to be placed twice on the schematic * .SUBCKT BAV70T 1 2 * * The resistor R1 and the diode D2 do not reflect * physical devices. Instead they * improve modeling in the reverse * mode of operation. * R1 1 2 5E+009 D1 1 2 BAV70T * .MODEL BAV70T D + IS = 3.2E-009 2E-009 2E-009 2E-009 + N = 1.85 + BV = 125.9 + IBV = 2.906E-007 906E-007 906E-007 906E-007 www.datasheetarchive.com/download/83020311-596964ZC/41738.zip (BAV70T.prm) |
NXP | 23/10/2012 | 56.27 Kb | ZIP | 41738.zip |
| Chemical content for BAV70W Chemical content for BAV70W Typenumber Philips package type Philips package type description Moisture Sensitivity Level Total product weight BAV70W SOT323 UMT3; CMPAK NA 05.5 mg Subpart Material group Substances CAS number Mass(mg) Mass(%) Active period. The leadfree status of a device as per our ordering code can be found on the product information www.datasheetarchive.com/files/philips/chemical_content/bav70w.html |
Philips | 14/06/2005 | 5.08 Kb | HTML | bav70w.html |
| Chemical content for BAV70T Chemical content for BAV70T Typenumber Philips package type Philips package type description Moisture Sensitivity Level Total product weight BAV70T SOT416 EMT3; SMPAK NA 02.5 mg Subpart Material group Substances CAS number Mass(mg) Mass(%) Active ordering code can be found on the product information pages. www.datasheetarchive.com/files/philips/chemical_content/bav70t.html |
Philips | 14/06/2005 | 5.82 Kb | HTML | bav70t.html |
| Chemical content for BAV70S Chemical content for BAV70S Typenumber Philips package type Philips package type description Moisture Sensitivity Level Total product weight BAV70S SOT363 UMT6 NA 06.4 mg Subpart Material group Substances CAS number Mass(mg) Mass(%) Active ordering code can be found on the product information pages. www.datasheetarchive.com/files/philips/chemical_content/bav70s.html |
Philips | 14/06/2005 | 5.82 Kb | HTML | bav70s.html |