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Part Manufacturer Description Datasheet BUY
BAV70E6327HTSA1 Infineon Technologies AG Rectifier Diode, 2 Element, 0.2A, 80V V(RRM), Silicon, SOT-23, 3 PIN visit Digikey Buy
BAV70E6433HTMA1 Infineon Technologies AG Rectifier Diode, 2 Element, 0.2A, 70V V(RRM), Silicon, SOT-23, 3 PIN visit Digikey Buy
BAV70SH6327XTSA1 Infineon Technologies AG Rectifier Diode, 4 Element, 0.2A, 85V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-6 visit Digikey Buy
BAV70UE6327HTSA1 Infineon Technologies AG Rectifier Diode, 4 Element, 0.2A, 85V V(RRM), Silicon, ROHS COMPLIANT, SC-74, 6 PIN visit Digikey Buy
BAV70WH6327XTSA1 Infineon Technologies AG Rectifier Diode, 2 Element, 0.2A, 85V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3 visit Digikey Buy
BAV70SH6827XTSA1 Infineon Technologies AG DIODE ARRAY GP 80V 200MA SOT363 visit Digikey Buy

BAV70 INFINEON

Catalog Datasheet MFG & Type PDF Document Tags

BAV70S

Abstract: BAV70 INFINEON BAV70. Silicon Switching Diode · For high-speed switching applications · Common cathode configuration BAV70 BAV70F BAV70L3 BAV70T BAV70W 3 BAV70S BAV70U 6 5 4 D 3 D 1 D 2 D 1 D 2 D 4 1 2 1 2 3 Type BAV70 BAV70F* BAV70L3 * BAV70S BAV70T BAV70U BAV70W , cathode common cathode Marking A4s A4s A4 A4s A4s A4s A4s 1 Mar-10-2004 BAV70. Maximum , Total power dissipation BAV70, T S 33°C BAV70F, TS tbd BAV70L3, TS tbd BAV70S, TS 85°C BAV70T, TS
Infineon Technologies
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BAV70 INFINEON
Abstract: 2007-09-19 BAV70. Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany , BAV70. Silicon Switching Diode â'¢ For high-speed switching applications â'¢ Common cathode , compliant) package1) â'¢ Qualified according AEC Q101 BAV70 BAV70W BAV70S BAV70U $ ! " # , ! , #31; , " , , #31; #31; #31; , ! Type Package Configuration Marking BAV70 , special request 1 2007-09-19 BAV70. Maximum Ratings at TA = 25° unless otherwise specified C Infineon Technologies
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marking code a4s

Abstract: SOt323 marking code 6X 2007-09-19 BAV70. Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany , BAV70. Silicon Switching Diode · For high-speed switching applications · Common cathode , ) package1) · Qualified according AEC Q101 BAV70 BAV70W BAV70S BAV70U $ ! " # , ! , , " , , , ! Type Package Configuration Marking BAV70 BAV70S , request 1 2007-09-19 BAV70. Maximum Ratings at TA = 25°C, unless otherwise specified
Infineon Technologies
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marking code a4s SOt323 marking code 6X sot363 marking DATE code A4S - BAV70 BAV70 ON diode a4s

bav70 sot363

Abstract: marking 2.15 1.1 13 2007-04-20 BAV70. Edition 2006-02-01 Published by Infineon , BAV70. Silicon Switching Diode · For high-speed switching applications · Common cathode , ) package 1) · Qualified according AEC Q101 BAV70 BAV70T BAV70W ! BAV70S BAV70U $ # , " " , ! , , , , ! Type BAV70 BAV70S BAV70T BAV70U BAV70W 1Pb-containing Package SOT23 SOT363 SC75 SC74 SOT323 , Marking A4s A4s A4 A4s A4s package may be available upon special request 1 2007-04-20 BAV70
Infineon Technologies
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bav70 sot363

INFINEON PART MARKING

Abstract: A4S 29 11 2007-09-19 BAV70. Edition 2006-02-01 Published by Infineon Technologies AG 81726 München , BAV70. Silicon Switching Diode · For high-speed switching applications · Common cathode , ) package1) · Qualified according AEC Q101 BAV70 BAV70W ! BAV70S BAV70U $ # , " " , ! , , , , ! Type BAV70 BAV70S BAV70U BAV70W 1Pb-containing Package SOT23 SOT363 SC74 SOT323 , A4s package may be available upon special request 1 2007-09-19 BAV70. Maximum Ratings
Infineon Technologies
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INFINEON PART MARKING A4S 29 BAV70E6327XT

BAV70S

Abstract: SOt323 marking code 6X 1.1 2.15 13 2006-01-17 BAV70. Published by Infineon Technologies AG, 81726 München , BAV70. Silicon Switching Diode · For high-speed switching applications · Common cathode configuration · BAV70S / U: For orientation in reel see package information below BAV70 BAV70T BAV70W BAV70S BAV70U $ ! " # , ! , , " , Type BAV70 BAV70S BAV70T BAV70U BAV70W , 2006-01-17 BAV70. Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol
Infineon Technologies
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SC74 SC75

E6327

Abstract: marking code a4s BAV70. Silicon Switching Diode · For high-speed switching applications · Common cathode configuration BAV70 BAV70F BAV70L3 BAV70T BAV70W BAV70S BAV70U 6 3 4 5 D 3 D 2 D 1 D 1 1 D 4 2 Type BAV70 BAV70F* BAV70L3 * BAV70S BAV70T BAV70U BAV70W 1 D 2 , 1 Mar-10-2004 BAV70. Maximum Ratings at TA = 25°C, unless otherwise specified Parameter , Ptot BAV70, T S 33°C 250 BAV70F, TS tbd 250 BAV70L3, TS tbd 250 BAV70S, TS 85
Infineon Technologies
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E6327 DIN 6784 BAV70S E6327 BAV70 E6327

diode a4s

Abstract: BAV70 BAV70. Silicon Switching Diode · For high-speed switching applications · Common cathode configuration BAV70 BAV70F BAV70L3 BAV70T BAV70W BAV70S BAV70U $ ! " # , ! , , " , Type BAV70 BAV70F* BAV70L3 * BAV70S BAV70T BAV70U BAV70W , , ! Package SOT23 , A4s A4s A4 A4s A4s A4s A4s * Preliminary Data * Target Data 1 Aug-26-2003 BAV70 , current, t = 1 us IFS 4.5 A Total power dissipation Ptot Value Unit V mW BAV70
Infineon Technologies
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free pdf transistor a4s A4s diode a4s sot23 bav70 transistor transistor BAV70

diode a4s

Abstract: free pdf transistor a4s BAV70. Silicon Switching Diode For high-speed switching applications Common cathode configuration BAV70 BAV70L3 BAV70T BAV70W BAV70S BAV70U 6 3 4 5 D 3 D 1 1 D 4 D 2 D 1 2 1 D 2 2 3 Type Package Configuration Marking BAV70 , cathode A4s A4 A4s A4s A4s A4s * Target Data 1 Feb-21-2003 BAV70. Maximum Ratings , us IFS 4.5 A Total power dissipation Ptot Value Unit V mW BAV70, TS 35
Infineon Technologies
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transistor a4s Double high-speed switching diode

BAV70

Abstract: BAV70S BAV70. Silicon Switching Diode · For high-speed switching applications · Common cathode configuration BAV70 BAV70F BAV70L3 BAV70T BAV70W BAV70S BAV70U 6 3 4 5 D 3 D 2 D 1 D 1 1 D 4 2 Type BAV70 BAV70F* BAV70L3 * BAV70S BAV70T BAV70U BAV70W 1 D 2 , 1 Mar-10-2004 BAV70. Maximum Ratings at TA = 25°C, unless otherwise specified Parameter , Ptot BAV70, T S 33°C 250 BAV70F, TS tbd 250 BAV70L3, TS tbd 250 BAV70S, TS 85
Infineon Technologies
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marking a4s

diode a4s

Abstract: BAV70S BAV70. Silicon Switching Diode · For high-speed switching applications · Common cathode configuration BAV70 BAV70F BAV70L3 BAV70T BAV70W BAV70S BAV70U 6 3 4 5 D 3 D 2 D 1 D 1 1 D 4 2 Type BAV70 BAV70F* BAV70L3 * BAV70S BAV70T BAV70U BAV70W 1 D 2 , 1 Dec-04-2003 BAV70. Maximum Ratings at TA = 25°C, unless otherwise specified Parameter , mW Ptot BAV70, T S 35°C 250 BAV70F, TS tbd 250 BAV70L3, TS tbd 250 BAV70S
Infineon Technologies
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BAV70

Abstract: BAV70 Silicon Switching Diode Array 3 For high-speed switching applications Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV70 A4s Pin , calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-31-2001 BAV70 , 50 2 Jul-31-2001 BAV70 Forward current IF = f (TS ) Reverse current IR = f (TA , 10-5 10-4 tp T 10-3 T 10-2 10-1 s 100 t 3 Jul-31-2001 BAV70 Forward
Infineon Technologies
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EHN00019 EHB00065 EHB00066 EHB00067 EHB00068

R9810

Abstract: 2A DCP 78 Fuse Duslic RJ11 Serial Bus SLIC Infineon Codec PCM2 PCM2 (Infineon) RJ11 PCM3 SLIC Infineon Switch 512 × 512 Duslic RJ11 SLIC Infineon (IDT) Codec (Infineon) RJ11 Microprocessor Bus SLIC Infineon RJ45 T1/E1 RJ45 T1/E1 PCM0 QUADFALC PCM1 PCM0 (Infineon) Microprocessor Bus RJ45 T1/E1 IDT_CSA T1/E1 RCLK1 RJ45 CPLD 8 KHz , Infineon Dual-Channel Subscriber Line Interface Concept (Duslic) PEB-3265 and PEB-4265 devices on the card
Freescale Semiconductor
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R9810 2A DCP 78 Fuse R8610 XPA1 PEB3265 PEB4265 MSC810

2sc3052ef

Abstract: 2n2222a SOT23 Filters Infineon® Hipac Audio Line Interfaces Type BGF100 BGF200 Application Line , > 50 4 15 2 WLP-11-1 > 50 4 15 2 WLP-8-1 Infineon® Hipac Memory Card , WLP-8-5 > 15 4 15 @ all pins WLP-18-1 > 15 4 15 WLP-24-3 Infineon® Hipac , -Channel LCD-Filter 14 Array with ESD Protection Infineon® Hipac RF Filtering Type BGH92M BGH182M Passband
Infineon Technologies
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2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 BF517 BF770A BF771 BF775 BF799 BF799W

BAS16 siemens

Abstract: BAS116 leakage equivalents of BAS16, BAV70, BAV99, BAW56 J 0.013 0.15 2. Irm = 5.0 nA max. @ 75 Volt , Close cross (Industry-standard part numbers). Major competition: o Philips o Infineon o
Diodes
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BAS116 BAV170 BAV199 BAW156 BAS16 siemens INFINEON PHILIPS philips sot-23 bav70 BAV70 SIEMENS

STF12A80

Abstract: BSTC1026 VISHAY VISHAY VISHAY VISHAY INFINEON INFINEON INFINEON INFINEON VISHAY INFINEON INFINEON INFINEON INFINEON INFINEON VISHAY ON SEMICONDUCTOR VISHAY VISHAY VISHAY ST MICROELECTRONICS ST MICROELECTRONICS INFINEON INFINEON INFINEON INFINEON ST MICROELECTRONICS ST MICROELECTRONICS ST , MICROELECTRONICS INFINEON INFINEON INFINEON INFINEON INFINEON INFINEON INFINEON INFINEON INFINEON INFINEON BT137-600E BT137X-600E BT137-600F BT137X-600F BT137-600F BT137X-600F BT137-600F BT137X
Philips Semiconductors
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STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16
Abstract: R3 5.11k US1B 2 D11 P16 750340993 2 2 D5 6 BAV70 11uH 3 C2 7 , 12 5 1 2 4 +5.7V L3 100uH C23 10u D9 BAV70 2 2 3 100u 3 14 T1 , Fairchild   2 D5, D9 Diode, SM, SOT-23, BAV70, Fast Recovery Diodes Inc   2 D7, D8 , , N-Chan NXP   2 Q2, Q5 MOSFET, TH, TO-220F, IPP072N10N3 G Infineon   1 Q3 , Infineon   2 Q6, Q7 BJT, SM, SOT-223, PZT651T1, NPN ON Semi   0 Q8 SOT-26, DNP Intersil
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ISL6726EVAL2Z ISL6726 PG1031NL PA1005 100NL 31333R-LF1

TGSP-S024NX

Abstract: RJ45X4 : easy256-rLv1-0 9 I EASY256-R1 V1.0 PCI-PLUG M256 PCI INTERFACE Page 1 Pages 7 Revision 03 INFINEON , : easy256-r1_»1-0 9 I INFINEON TECHNOLOGIES AG (c) 1999 10 11 I 12 13 14 \I < A26. Ml ovin 0VB6 , INFINEON TECHNOLOGIES AG (c) 1999 10 11 I 12 13 14 \I < _12_ JLL I 14 Z7R 163B4mz-1 27R , -0 9 I INFINEON TECHNOLOGIES AG (c) 1999 10 11 I 12 13 14 _12_ JLL v_ v_ _ CkaFALC , 7 Revision 03 INFINEON TECHNOLOGIES AG (c) 1999 10 11 I 12 13 14 _12_ JLL -¿TMP30
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OCR Scan
0VI61 TGSP-S024NX RJ45X4 TGSPS024 LED1411 tgsps024nx dh 1117 PEB20256E MP21- ANAL06 0VI21 0VI71

2N2907 SOT-23

Abstract: BC547 smd BAL99 BAV70 BAV74 BAV99 BAW56 1N4148 (4x) 1 1N914 BAS16W BAS28 BAW100 BAV70W , PZTA42 PZTA92 7 Cross Reference 2000-09-01 Infineon Technologies
Infineon Technologies
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2N3563 2N2907 SOT-23 BC547 smd 2n2222 smd BAT16-046 2n2907 smd SMD BC547 1N4001 SCD-80 BAW78A BAS78A 1N4002 BAW78B

BC548 TRANSISTOR REPLACEMENT

Abstract: 1n4007 smd, toshiba .) BAV99S (4 ser./ser.) BAS216 BAS16 BAV70 (2 c.c.) BAV99 (2 ser.) BAW56 (2 c.a.) BAS28 (2 par
Philips Semiconductors
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BC548 TRANSISTOR REPLACEMENT 1n4007 smd, toshiba TYN612 pin diagram S0817MH TYN604 scr pin diagram kmz51 compass BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03
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