BAV17 BAV21 DO-35 D7/10 D8/10 BAV17-TAP BAV17-TR BAV18 BAV18-TAP BAV18-TR BAV19

VISHAY Vishay Semiconductors Switching Diode Features · Silicon Epitaxial Planar Diodes Applications General purposes

BAV17 BAV17.BAV21 BAV21 VISHAY Vishay Semiconductors Switching Diode Features · Silicon Epitaxial Planar Diodes Applications General purposes Mechanical Data Case: DO-35 DO-35 Glass Case Weight: approx. 300 mg Packaging Codes/Options: D7/10 D7/10 K per 13" reel (52 mm tape), 20 K/box D8/10 D8/10 K per Ammo tape (52 mm tape), 20 K/box 94 9367 Parts Table Part Type differentiation Ordering code Remarks BAV17 BAV17 VRRM = 25 V, Single Diodes BAV17-TAP BAV17-TAP / BAV17-TR BAV17-TR Ammopack / Tape and Reel BAV18 BAV18 VRRM = 60 V, Single Diodes BAV18-TAP BAV18-TAP / BAV18-TR BAV18-TR Ammopack / Tape and Reel BAV19 BAV19 VRRM = 120 V, Single Diodes BAV19-TAP BAV19-TAP / BAV19-TR BAV19-TR Ammopack / Tape and Reel BAV20 BAV20 VRRM = 200 V, Single Diodes BAV20-TAP BAV20-TAP / BAV20-TR BAV20-TR Ammopack / Tape and Reel BAV21 BAV21 VRRM = 250 V, Single Diodes BAV21-TAP BAV21-TAP / BAV21-TR BAV21-TR Ammopack / Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Value Unit VRRM 25 V VRRM 60 V BAV19 BAV19 VRRM 120 V BAV20 BAV20 VRRM 200 V BAV21 BAV21 VRRM 250 V BAV17 BAV17 VR 20 V BAV18 BAV18 VR 50 V BAV19 BAV19 VR 100 V BAV20 BAV20 VR 150 V BAV21 BAV21 VR 200 V IF Forward current Symbol BAV18 BAV18 Reverse voltage Part BAV17 BAV17 Peak reverse voltage 250 mA A Peak forward surge current tp = 1 s, Tj = 25 °C IFSM 1 Forward peak current f = 50Hz IFM 625 mA PV 500 mW Power dissipation Document Number 85543 Rev. 5, 17-Sep-03 www.vishay.com 1 BAV17 BAV17.BAV21 BAV21 VISHAY Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Junction ambient Test condition Symbol Value Unit RthJA 350 K/W Tj 175 °C Tstg l = 4 mm, TL = constant - 65 to + 175 °C Junction temperature Storage temperature range Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Max Unit VF 1 V BAV17-TR BAV17-TR IR 100 nA BAV18-TR BAV18-TR IR 100 nA VR = 100 V BAV19-TR BAV19-TR IR 100 nA VR = 150 V BAV20-TR BAV20-TR IR 100 nA VR = 200 V BAV21-TR BAV21-TR IR 100 nA Tj = 100 °C, VR = 20 V BAV17-TR BAV17-TR IR 15 µA Tj = 100 °C, VR = 50 V BAV18-TR BAV18-TR IR 15 µA Tj = 100 °C, VR = 100V BAV19-TR BAV19-TR IR 15 µA Tj = 100 °C, VR = 150 V BAV20-TR BAV20-TR IR 15 µA Tj = 100 °C, VR = 200 V BAV21-TR BAV21-TR IR 15 µA IR = 100 µA, tp/T = 0.01, tp = 0.3 ms BAV17-TR BAV17-TR V(BR) 25 V BAV18-TR BAV18-TR V(BR) 60 V BAV19-TR BAV19-TR V(BR) 120 V BAV20-TR BAV20-TR V(BR) 200 V BAV21-TR BAV21-TR V(BR) 250 Forward voltage Reverse current VR = 20 V VR = 50 V Part IF = 100 mA Breakdown voltage Diode capacitance VR = 0, f = 1 MHz Differential forward resistance Reverse recovery time www.vishay.com 2 Symbol Min Typ. V CD 1.5 pF IF = 10 mA rf 5 IF = IR = 30 mA, iR = 3 mA, RL = 100 trr 50 ns Document Number 85543 Rev. 5, 17-Sep-03 BAV17 BAV17.BAV21 BAV21 VISHAY Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) rf - Differential Forward Resistance ( ) I R - Reverse Current ( µ A ) 1000 100 Scattering Limit 10 1 V R = VRRM 0.1 0.01 0 40 80 120 160 100 200 Tj - Junction Temperature ( ° C ) 94 9084 1000 Tj = 25° C 10 1 0.1 94 9089 Figure 1. Reverse Current vs. Junction Temperature 1 10 100 I F - Forward Current ( mA ) Figure 3. Differential Forward Resistance vs. Forward Current I F - Forward Current ( mA ) 1000 Tj = 25° C 100 Scattering Limit 10 1 0.1 0 94 9085 0.4 0.8 1.2 1.6 2.0 V F - Forward Voltage ( V ) Figure 2. Forward Current vs. Forward Voltage Package Dimensions in mm Cathode Identification " 0.55 max. technical drawings according to DIN specifications " 1.7 max. 16924 Document Number 85543 Rev. 5, 17-Sep-03 26 min. 3.9 max. 26 min. www.vishay.com 3 BAV17 BAV17.BAV21 BAV21 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC 88/540/EEC and 91/690/EEC 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 85543 Rev. 5, 17-Sep-03