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BAV10 Datasheet

Part Manufacturer Description PDF Type
BAV10 EIC Semiconductor High Speed Switching Diodes Original
BAV10 Philips Semiconductors High-Speed Diode Original
BAV10 Philips Semiconductors Ultra High Speed Diode Original
BAV10 Mullard Quick Reference Guide 1977/78 Scan
BAV10 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BAV10 N/A Shortform Data and Cross References (Misc Datasheets) Scan
BAV10 N/A Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan
BAV10 N/A Shortform Electronic Component Datasheets Scan
BAV10 N/A Basic Transistor and Cross Reference Specification Scan
BAV10 N/A Diode, Transistor, Thyristor Datasheets and more Scan
BAV10 N/A Shortform Semicon, Diode, and SCR Datasheets Scan
BAV10 N/A Cross Reference Datasheet Scan
BAV10 Philips Semiconductors Small Signal Devices - Diodes Scan
BAV10 Philips Semiconductors High-speed diode Scan
BAV10 Texas Instruments Discrete Devices 1978 Scan
BAV100 Diotec Ultrafast Switching Surface Mount Si-Rectifiers Original
BAV100 EIC Semiconductor High Speed Switching Diodes Original
BAV100 Galaxy Semi-Conductor Holdings SMALL SIGNAL SWITCHING DIODE Original
BAV100 General Semiconductor Small Signal Diodes Original
BAV100 Micro Commercial Components DIODE ULTRA FAST RECOVERY RECTIFIER 60V 0.2A 2SOD-80C) Original
Showing first 20 results.

BAV10

Catalog Datasheet MFG & Type PDF Document Tags

BAV10

Abstract: Philips Semiconductors Product specification High-speed diode BAV10 FEATURES â , BAV10 is a high-speed switching diode fabricated in planar technology, and encapsulated in the , Manufacturer Philips Semiconductors Product specification High-speed diode BAV10 ELECTRICAL CHARACTERISTICS , Its Respective Manufacturer Philips Semiconductors Product specification High-speed diode BAV10 , Manufacturer Philips Semiconductors Product specification High-speed diode BAV10 10- 100 200 (1) VR = 60
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OCR Scan
DO-35

BAV10

Abstract: MAM246 DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAV10 High-speed diode Product specification , Semiconductors Product specification High-speed diode BAV10 FEATURES DESCRIPTION · Hermetically sealed leaded glass SOD27 (DO-35) package The BAV10 is a high-speed switching diode fabricated in , Philips Semiconductors Product specification High-speed diode BAV10 ELECTRICAL CHARACTERISTICS , BAV10 GRAPHICAL DATA MBG454 400 MBG457 600 handbook, halfpage handbook, halfpage
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Original
MAM246 diode BAV10 MLA428

BAV10

Abstract: bu 11 apx ï»¿â  bbSB^l GOSbe1^ IDI BiAPX N AMER PHILIPS/DISCRETE b^E D > ULTRA-HIGH-SPEED DIODES BAV10 Silicon planar epitaxial, ultra-high-speed, high-conductance diode in a DO-35 envelope. The BAV10 is , This Material Copyrighted By Its Respective Manufacturer BAV10 J â 1 ^53131 002^2=13 046 ^ N AUER , BAV10 < < Ì ! 90% : \ / 10% \ 4- -tp-⺠t Fig. 2. input signal Input signal : 1st rise , 249 This Material Copyrighted By Its Respective Manufacturer BAV10 â  L.h.53c131 OOSb^S ^10 â
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OCR Scan
bu 11 apx BAW62 100XL

BAV10

Abstract: MAM246 DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAV10 High-speed diode Product specification , High-speed diode BAV10 FEATURES DESCRIPTION · Hermetically sealed leaded glass SOD27 (DO-35) package The BAV10 is a high-speed switching diode fabricated in planar technology, and encapsulated in , . 1996 Sep 16 2 mW Philips Semiconductors Product specification High-speed diode BAV10 , High-speed diode BAV10 GRAPHICAL DATA MBG454 400 MBG457 600 handbook, halfpage
Philips Semiconductors
Original
Abstract: b b S B ^ l 002b2^2 APX 101 BAV10 N AMER PHILIPS/DISCRETE ULTRA-HIGH-SPEED DIODES Silicon planar epitaxial, ultra-high-speed, high-conductance diode in a DO-35 envelope. The BAV10 is prim , 247 â I bbS3131 QOSbaHa DM6 â  APX BAV10 N AUER PHILIPS/DISCRETE y v bc . , April 1992 11 . IAPX â I bb53R31 0Q2b2R4 T64 BAV10 Ultra-high-speed diodes _ , 249 â  BAV10 1^53^31 0 0 2 ^ 5 â'˜ Q HAPX U N AUER PHILIPS/DISCRETE b'lE 3 > T j = -
OCR Scan
S3131 7Z73212 53T31 7Z10681
Abstract: D IS C R E T E S E M IC O N D U C T O R S BAV10 High-speed diode 1996 Sep 16 Product , a tio n H ig h - s p e e d d io d e BAV10 FEATURES D ESCRIPTIO N â'¢ Hermetically sealed leaded glass SOD27 (DO-35) package The BAV10 is a high-speed switching diode fabricated in , Semiconductors Product specification High-speed diode BAV10 E L E C T R IC A L C H A R A C T E R IS T , Philips Semiconductors Product specification High-speed diode BAV10 G R A P H IC A L DATA -
OCR Scan

FD6666 diode

Abstract: diode BY100 , 1N4004, 1S183. BA182, BAX13, FDH900, 1N4009-4154, 1S324/5, BAW75. BA100-127-147-176-188, BAW76, BAV10-18 , . BA185. BAV20, FDH400. 1N3595, 1S923. 1N485/B, 1S923. BAX16. BAV10-13, FDH999. BAV10-13, FDH900. BAV10, BAX13-82, FDH999. BAV10-13, FDH900. BAX82. BAV45. BAV21, BAY46. ' BAV20, BAY45. BAV19, BAY45. BAV18 , , BAY98. BAV69. BAV10. BAX 13, BAW75. BAX13. BAV10. BAV10. BAW56, BAX13. BAX13. BAW56. BAW56. BYX10. BAV10. , GER4003 GER4004 GER4005 GER4006 GER4007 GEX12 GEX13 1N4002. BA 148. AAZ17, BAV10. BVX38/300, BVX48/300
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OCR Scan
AA119 BY127 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 diode aa119 A4/10 A5/62 A5/105 A1000 AA100 AA110

BAV105

Abstract: philips 1n4148 DIODE _ _ BAS16W - BAV19 BAV20 BAV21 1N4150 BAV10 BAX 14 BAX 18 BAX 12 BAV101 BAV102 BAV103 PMLL4150 BAV105 - BAS19 BAS20 BAS21 - BAV231 ) - BAS561) - BAS29 - - _ - - , 260 80 BAV21 250 100 250 150 250 200 300 BAV10 50 300 60 BAX 12 500 20 500 75 400 90 DOUBLE DIODES
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OCR Scan
1PS193 1PS226 1PS181 1PS184 philips 1n4148 DIODE Diode BAx DO-34 SC59/ BAW62/ BA317 BA318 1N914

BA100 diode

Abstract: BA102 , 1S324/5, BA1A/75. ' BA100-127-147-176- 188, BAW76, BAV10-18, BAX16, 1N914-4150, 1S72. BAX16, BAY 19 , , 1S923. BAX16. i BAV10-13, FDH999. BAV10-13, FDH900. BAV10, BAX13-82, FDH999. BAV10-13, FDH900. BAX82 , , BAY61-63, 1N4163. BAX12-13, BAW75, BAY63. BAX16, BAY98. BAV69. BAV10. BAX13, BAW75. BAX13. BAV10. BAV10. BAW56, BAX13. BAX13. BAW56. BAW56. BYX10. BAV10. BAX13. BYX52/600. BAV44. OA91-95. OA85-95, 1N618. OA70 , / 4/5 GER4001 GER4002 GER4003 GER4004 GER4005 GER4006 GER4007 GEX12 GEX13 1N4002. BA148. AAZ17, BAV10.
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OCR Scan
BA102 AAY20 B2M1-5 1N2528 PH1021 DIODE AA116 AA111 AA112 AA113 AA114 AA115 AA116

BAV10

Abstract: DO-204AH BAV10 HIGH SPEED SWITCHING DIODE DO - 35 Glass (DO-204AH) FEATURES : · High switching speed: max. 6 ns · General application · Continuous reverse voltage:max. 60 V · Repetitive peak reverse voltage:max. 60 V · Repetitive peak forward current: max. 600 mA * Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) max. Cathode Mark 1.00 (25.4) min. 0.020 (0.52)max , V pF - - 6 ns Rev. 02 : March 25, 2005 RATING AND CHARACTERISTIC CURVES ( BAV10
EIC Semiconductor
Original
Abstract: BAV10 HIGH SPEED SWITCHING DIODE DO - 35 Glass (DO-204AH) FEATURES : â'¢ High switching speed: max. 6 ns â'¢ General application â'¢ Continuous reverse voltage:max. 60 V â'¢ Repetitive peak reverse voltage:max. 60 V â'¢ Repetitive peak forward current: max. 600 mA 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) max. Cathode Mark 1.00 (25.4) min. 0.020 (0.52)max. MECHANICAL , ( BAV10 ) FIG. 1 MAXIMUM PERMISSIBLE CONTINUOUS FORWARD CURRENT AS A FUNCTION OF AMBIENT TEMPERATURE Synsemi Semiconductor
Original
Abstract: BAV10 Diodes General Purpose Fast Rectifier Military/High-RelN I(O) Max.(A) Output Current300m V(RRM)(V) Rep.Pk.Rev. Voltage60 t(rr) Max.(s) Rev.Rec. Time6.0n @I(F) (A) (Test Condition)400m @I(R) (A) (Test Condition)400m V(FM) Max.(V) Forward Voltage750m @I(FM) (A) (Test Condition)10m @V(RM) (V) (Test Condition) I(RM) Max.(A) Reverse Current100n @V(R) (V)(Test Condition)60 I(RM) Max.(A) Pk. Rev. Current100u @V(R) (V) (Test Condition) @Temp. (øC) (Test Condition)150õ American Microsemiconductor
Original

IN4149

Abstract: cv8790 2.5 BA221 30 200 1.05 200 8 10/10/1 2.5 BA222 50 76 1.1 50 8 10/10/1 2 BAV10 60 300 1.25 500 6 400 , -61/03/302 BAY71 DO-35 35 75 1.0 20 100 35 4.0 10 2.0 Ultra fast diode DS59-61/03/303 BAV10 DO-35 60 300
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OCR Scan
IS920 IS923 CV7040 CV8617 CV9637 IN4448 IN4149 cv8790 Diode BAY 61 IN917 F250- F250-1N914 1N4148-TB BS9302 F011/1 F011/2

pm2222a

Abstract: BCB47B BAV100 SOD80C diode BAV10 241 BAV101 SOD80C diode BAV19 241 BAV102 SOD80C diode BAV20 241 BAV103 SOD80C diode BAV21 241 BAV105 SOD80C diode BAV10 249 BAW56 SOT23 diode BAW62,1N4148 (double) 257 BAW56W SOT323 diode (2x , 137 BAS55 SOT23 diode BAV10 147 BAS56 SOT143 diode (2x) BAV10 153
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OCR Scan
pm2222a BCB47B SOD80C PHILIPS 1N4148 SOD80C BF960 BCB47BW BA582 BA482 BA682 BA683 BA483 BAL74

d1n914

Abstract: bb204b 1N4449 1N4531 1N4532 BAS 11 BAV10 BAV18 BAV19 BAV20 BAV21 1.00 1.00 0.72 1.00 0.73 1.00 1.00 0.74 1.00
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OCR Scan
d1n914 bb204b 1N914A 1N914B 1N916 1N916B 1N4149 1N4151

CV9637

Abstract: cv8617 -61/03/302 BAY71 DO-35 35 75 1.0 20 100 35 4.0 10 2.0 Ultra fast diode DS59-61/03/303 BAV10 DO-35 60 300
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OCR Scan
IS922 CV7875 IS951 is920 equivalent cv7332 DO35 DIODE Is44 diode IN4448 Rectifier diode - IN4148 BS9300 IN914 IN916 IN4148 BAY72 BS9330

BAX12 equivalent

Abstract: 1N4532 BC817 BAT54 BAV99W BC817W BAT54A BAV100 BC846 BAT54AW BAV101 BC846F BAT54C BAV102 BC846S BAT54CW BAV103 BC846T BAT54S BAV105 BC846W BAT54SW BAV170 , BC556 BC859W BAT721S BC557 BC860 BAV10 BC559 BC860W BAV20 BC618 BC868
Philips Semiconductors
Original
BAL74W 1PS89SS05 1PS89SS06 1PS301 1PS59SB10 1PS59SB20 BAX12 equivalent 1n823a BAX18 equivalent plva600a PDTC114EU 1N821 1PS76SB70 1PS79SB10 1N823 1PS79SB40
Abstract: N AUER PHILIPS/DISCRETE 5SE D U bbSBIBl OOlbiafi 3 â  T 'O ^ - O 0 ! Small Signal Devices SWITCHING DIODES PRO TYPE 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148 1N4149 1N4150 1N4151 1N4153 1N 4446 1N 4448 1N 4449 1N4531 1N 4532 BAS11 BAV10 BAV18 BAV19 BAV20 BAV21 Vr (V ) 75 75 75 75 75 75 75 75 50 75 75 75 75 75 75 75 300 60 50 100 150 200 75 75 75 75 75 75 200 200 200 200 200 200 200 200 200 200 350 300 250 -
OCR Scan
BB119 BB417 BB112 BB130 BB212 BB204G

1N4148 DO-34

Abstract: 1N4532 4.0 1N4532 DO-34 75 200 1.00 10 100 50 2 2.0 BAS11 DO-35 300 350 1.10 300 100 300 1000 15.0 BAV10
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OCR Scan
BB910 1N4148 DO-34 vhf diode bb809 SOD-69 1N4446 1N4448 BA223 BA423 BA484 BB405B

IN4152

Abstract: IN4606 2.5 BA221 30 200 1.05 200 8 10/10/1 2.5 BA222 50 76 1.1 50 8 10/10/1 2 BAV10 60 300 1.25 500 6 400
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OCR Scan
IN916A IN916B IN4150 IN4151 IN4152 IN4164 IN4606 in4447 IN4608 in914b

1SS166

Abstract: BAV10 Diodes General Purpose Fast Rectifier Military/High-RelN I(O) Max.(A) Output Current300m V(RRM)(V) Rep.Pk.Rev. Voltage60 t(rr) Max.(s) Rev.Rec. Time6.0n @I(F) (A) (Test Condition)400m @I(R) (A) (Test Condition)400m V(FM) Max.(V) Forward Voltage750m @I(FM) (A) (Test Condition)10m @V(RM) (V) (Test Condition) I(RM) Max.(A) Reverse Current100n @V(R) (V)(Test Condition)60 I(RM) Max.(A) Pk. Rev. Current100u @V(R) (V) (Test Condition) @Temp. (øC) (Test Condition)150õ
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OCR Scan
1SS166
Showing first 20 results.