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Part : BAT 15-02LRH E6327 Supplier : Infineon Technologies Manufacturer : Avnet Stock : 15,000 Best Price : €0.2369 Price Each : €0.3969
Part : BAT15-02LS E6327 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : BAT1502LSE6433XTMA1 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : €0.1549 Price Each : €0.2609
Part : BAT1502LSE6433XTMA1 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $0.1349 Price Each : $0.1529
Part : BAT 15-02LRH E6327 Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 14,260 Best Price : $0.4140 Price Each : $0.4140
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BAT15-02L/V

Catalog Datasheet MFG & Type PDF Document Tags

BAT15-04W

Abstract: BAT15 detectors and modulators Low noise figure BAT15-02L/V BAT15-03W BAT15-04W BAT15-05W 1 , Ptot BAT15-02V, TS Unit V mA mW 76 °C 100 72 °C 100 BAT15-02L , 2 V -1 0 4 1 2 3 BAT15-02L EHD07077 (TS ) 120 mA mA 100 , sensitive device, observe handling precaution! Type BAT15-02L* BAT15-02V BAT15-03W BAT15-04W BAT15 , BAT15-02L, BAT15-02V BAT15-04W BAT15-05W Unit K/W BAT15-03W 780 795 820 850
Infineon Technologies
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BAT15-099 BAT15-099R SC79 BAT15-02L/V EHD07083

BGT24MTR11

Abstract: AZ1045-04F IC Ptot VCE0 [V] [mA] [mW] 15 25 280 12 50 300 12 80 580 20 35 280 20 35 280 12 20 175 12 35 250 12 , 2 5 5 2 2 2 2 5 Characteristics (TA = 25°C) VCE f Gma,Gms [V] [MHz] [dB] 5 800 ­ 8 900 13.5 8 900 , 10 10 10 15 15 30 30 50 50 70 70 5 5 10 10 15 15 30 30 5 15 15 40 15 15 30 30 ­ ­ ­ 5 15 VCE [V] ­ 8 , BFP740F NEW BFP750 N N N N N N Maximum Ratings IC Ptot fT F VCE0 [V] [mA] [mW] [GHz] [dB] 4.5 4.5 4.5 4.5 , Characteristics (TA = 25°C) VCE f Gma,Gms IC VCE [V] [MHz] [dB] [mA] [V] 2 2 2 2 2 2 2 2 2 2 2 3 3 3 3 3 3 3 3 3
Infineon Technologies
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BFR181W BGT24MTR11 AZ1045-04F BAR86-02LRH BGA628L7 24GHz Radar ALPHA&OMEGA DATE CODE BF517 BF770A BF771 BF799 BF799W BFP181

XM0830SJ

Abstract: smd code marking 162 sot23-5 Ptot VCE0 IC [V] [mA] [mW] 15 25 280 12 50 300 12 80 580 15 30 280 20 35 280 20 35 , IC [mA] [V] [MHz] [dB] [mA] 2 5 800 ­ ­ 5 8 900 13.5 30 10 8 900 14.5 30 2 6 900 , 900 19 5 5 8 900 19 15 VCE [V] ­ 8 8 8 ­ ­ 8 8 8 8 8 8 8 8 8 8 8 8 8 8 , Type/Polarity N = NPN P = PNP Maximum Ratings Ptot fT F VCE0 IC [V] [mA] [mW] [GHz] [dB] Characteristics (TA = 25°C) IC VCE f Gma,Gms IC VCE [mA] [V] [MHz] [dB] [mA] [V] Package Family f
Infineon Technologies
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XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 sot-363 inf BF775 BFP181R BFP182 BFP182R BFP182W BFP183

cdma Booster schematic

Abstract: uwb transceiver Communication VCTRL 0.5 - 3.0 V VCTRL RFOUT f = 2110 MHz ­ 2170 MHz Varactor Diode: BBY58-02L , Diodes BAT15x BAT68x BAT62x BAS70x UMTS TRX 1960 Band V 882 Duplexer BGA734L16 BPF , Switching: BA892/ -02L Varactor Diode BB555 VHF I/II BB565 Recommended Products in RED ! © 2007 , Amplifiers LNA Output 1 H LNA2 Switch Matrix 12 GHz V IF 950-1950MHz Output 2 , Transistors: 2xBFP520+BFP650 ANT SW BAR50-02L © 2007 Infineon Technologies AG. All rights reserved
Infineon Technologies
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cdma Booster schematic uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A B132-H9014-X-X-7600 NB07-1094

2sc3052ef

Abstract: 2n2222a SOT23 CT @ VR IF Q = Quadruple f = 1MHz [V] [mA] [pF] BAT62 40 20 0.35 BAT62-02L 40 20 0.35 40 , BFR360F BFR380F BFR92P BFR92W BFR93A BFR93AW BFS17P BFS17S BFS17W BFS481 BFS483 VCE0 [V] 15 , 10 10 20 20 20 20 2 2 3 3 5 5 10 10 1 2 3 8 2 2 5 5 2 2 2 2 5 VCE [V , 30 30 ­ ­ ­ 5 15 VCE [V] ­ 8 8 8 ­ ­ 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 , Maximum Ratings N = NPN P = PNP VCE0 [V] IC [mA] IC VCE [mA] [V] f Gma,Gms [MHz] [dB
Infineon Technologies
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2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 BFG135A BFG193 BFG196 BFG19S BFG235 BFP183W

BAT15-02LRH

Abstract: BAT15-04W dissipation Ptot Value Unit V mA mW BAT15-02LRH, -07LRH, TS 76 °C 100 BAT15-03W, TS 70 , 0.25 0.32 0.41 - - 20 DC Characteristics Breakdown voltage V(BR) V I(BR) = , Characteristics Diode capacitance pF CT VR = 0 V, f = 1 MHz, all other types - - 0.35 VR = 0 V, f = 1 MHz, BAT15-099R - - 0.5 - 5.5 - Differential forward resistance RF I F = 10 mA / 50 mA 1V F is the difference between lowest and highest V F in a multiple diode
Infineon Technologies
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BAT15-099LRH BAT15-098LRH BAT15-07LRH

BAT15

Abstract: -098LRH, BAT15-099LRH 1For Symbol VR IF Ptot Value 4 110 100 100 100 100 100 100 100 100 Unit V mA mW , Parameter DC Characteristics Breakdown voltage I (BR) = 100 µA V(BR) VF Symbol min. 4 Values typ. max. - Unit V Forward voltage I F = 1 mA I F = 10 mA 0.16 0.25 VF 0.23 0.32 - 0.32 , 0 V, f = 1 MHz Differential forward resistance IF = 10 mA / 50 mA 1V F CT RF - 5.5 0.35 , 1 25 C 0.2 0 10 0.1 0.0 10 -1 0 2 V VR 4 0 1 2 3 V
Infineon Technologies
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BAT-098LRH BAT15-07LR

Q62702-A118

Abstract: 55 to + 150 - 6 5 to + 175 + 220 5.0 5.0 2.0 2.0 1.0 °C °C °C Erg Unit V mA h Power dissipation , voltage / R = 10 A Reverse current Vr = 2 V BAT15-013, BAT15-043, BAT15-073, BAT15-103, BAT15-123, DC Characteristics at TA = 25 °C unless otherwise specified Symbol min. V(BR) ^R -014, -044, -074, -104, -124 -033 , -063, -064 -093, -094 -113,-114 - BAT 15 Lim it Values typ. - Unit V jiA max. - 3 - - - - - - - - 5 5 5 1 1 V 0.15 0.17 0.18 0.19 0.20 V Forward voltage 1
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OCR Scan
Q62702-A118 Q62702A1178 Q62702A1180 BAT15-113 BAT15-014

bat15

Abstract: -098LRH, BAT15-099LRH 1For Symbol VR IF Ptot Value 4 110 100 100 100 100 100 100 100 100 Unit V mA mW , Parameter DC Characteristics Breakdown voltage I (BR) = 100 µA V(BR) VF Symbol min. 4 Values typ. max. - Unit V Forward voltage I F = 1 mA I F = 10 mA 0.16 0.25 VF 0.23 0.32 - 0.32 , 0 V, f = 1 MHz Differential forward resistance IF = 10 mA / 50 mA 1V F CT RF - 5.5 0.35 , 1 25 C 0.2 0 10 0.1 0.0 10 -1 0 2 V VR 4 0 1 2 3 V
Infineon Technologies
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S11-P

Diode mark 1445

Abstract: Value 4 110 100 100 100 100 100 100 100 Unit V mA mW Tj Top Tstg Symbol RthJS 150 -55 . 150 , 100 µA V(BR) VF Symbol min. 4 Values typ. max. - Unit V Forward voltage I F = 1 mA I F , mA - AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz Differential forward resistance , -1 0 2 V VR 4 0 1 2 3 V 4 VR Forward current IF = (VF) TA = , 60 50 40 10 -1 30 20 10 10 -2 0.0 0.5 V 1.0 VF 0 0 15 30 45 60
Infineon Technologies
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Diode mark 1445

BAT15-02LS

Abstract: BAT15-099 4 110 100 100 100 100 100 100 100 Unit V mA mW Tj Top Tstg Symbol RthJS 150 -55 . 150 , 100 µA V(BR) VF Symbol min. 4 Values typ. max. - Unit V Forward voltage IF = 1 mA IF = , AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz, all other types VR = 0 V, f = 1 MHz, BAT15 , 0 2 V VR 4 10 -1 0 1 2 3 V VR 4 Forward current IF = (VF) TA = , 10 0 10 -1 30 20 10 10 -2 0.0 0.5 V 1.0 VF 0 0 15 30 45 60
Infineon Technologies
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BAT15-02LS

bat series diodes

Abstract: BAT DIODES Values Unit Reverse voltage VR IF 3 V Forward current BAT15-013, -014, -033, -034 , V(BR) typ. - - IR - BAT15-013, -014, -033, -034 BAT15-043, -044, -063, -064 BAT15 , , -094 BAT15-103, -104, -113, -114 BAT15-123, -124 VF2 Semiconductor Group V mA VR = 2 V , -073, -074, -093, -094 BAT15-103, -104, -113, -114 BAT15-123, -124 Unit V - - 0.15 0.17 0.18 0.19 0.20 V - 3 0.23 0.27 0.29 0.30 0.31 0.28 0.30 0.31 0.32 0.33 Draft A03
Siemens
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bat series diodes BAT DIODES BAT15-033 BAT15-063 BAT15-093 MARKING A03 BAT15-

BAT15-090D

Abstract: tuner ku band Maximum Type Band Ratings Characteristics (TA=25°C) Case GHz ^R V h mA F SSB(typ) dB V BR (min) V r T(tvp) pF c T (max) pF V F (tvp) V rf(typ) Ã2 Style Lead Code SOT Equiv. BAT14-020 S .4.0 (S , Maximum Type Band Ratings Characteristics (TA=25°C) Case GHz VR V 'F mA F SSB(typ) dB V BR (min) V c T (typ) pF c T (max) pF V F (typ) V 'V (tvp) a Style Lead Code SOT Equiv. BAT15-020 S .4.0 (S , Frequency Band Maximum Ratings Characteristics (TA= 25°C) Case GHz 'K V mA V BR (min) V c T (typ) pF
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OCR Scan
BAT14-110D BAT15-110D BAT15-090D tuner ku band bat14-110s DD45431 BAT14-050 BAT14-090 BAT14-110 BAT15-050
Abstract: Maximum Ratings Parameter Symbol Limit Values Unit Reverse voltage Vr 3 V , Parameter Symbol Lim it Values min. Breakdown voltage / R = 10 A Reverse current Vr = 2 V BAT15-013, BAT15-043, BAT15-073, BAT15-103, BAT15-123, max. 3 V(BR) typ. - - ^R , Unit V jiA -033, -034 -063, -064 -093, -094 -113,-114 - - - - - - - - - - 5 5 5 1 1 V VFi -033, -034 -063, -064 -093, -094 -113,-114 - - - - -
OCR Scan
Abstract: 100 Unit V mA mW Tj Top Tstg Symbol RthJS 150 -55 . 150 -55 . 150 °C Value 780 , otherwise specified Parameter DC Characteristics Breakdown voltage I(BR) = 100 µA V(BR) VF Symbol min. 4 Values typ. max. - Unit V Forward voltage IF = 1 mA IF = 10 mA 0.16 0.25 VF 0.23 0.32 - , V, f = 1 MHz, all other types VR = 0 V, f = 1 MHz, BAT15-099R - CT pF 5.5 0.35 0.5 , highest V F in a multiple diode component. 3 2006-11-20 BAT15. Diode capacitance CT = (VR Infineon Technologies
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BAT15

Abstract: BAT15-02LRH Total power dissipation Ptot Value Unit V mA mW BAT15-02LRH, -07LRH, TS 76 °C 100 , - 5.5 - DC Characteristics Breakdown voltage V(BR) V I (BR) = 100 µA , VR = 0 V, f = 1 MHz Differential forward resistance IF = 10 mA / 50 mA 1V F is the difference , 10 0 0.1 0.0 10 0 2 V -1 0 4 1 2 3 V 4 VR VR , -2 0.0 0.5 0 0 V 1.0 15 30 45 60 75 90 105 120 °C 150 TS VF
Infineon Technologies
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BAT15

Abstract: BAT15-03W power dissipation Ptot Unit V mA mW BAT15-02LRH, -099LRHTS 76 °C 100 BAT15-03W, TS , IF = 10 mA 0.25 0.32 0.41 - - 20 DC Characteristics Breakdown voltage V(BR) V I(BR) = 100 µA Forward voltage VF Forward voltage matching1) VF mV IF = 10 mA AC Characteristics Diode capacitance pF CT VR = 0 V, f = 1 MHz, all other types - - 0.35 VR = 0 V, f = 1 MHz, BAT15-099R - - 0.5 - 5.5 - Differential forward
Infineon Technologies
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RF schottky diode

TSLP

Abstract: marking NP -05W BAT15-099 BAT15-099R 1For Value 4 110 100 100 100 100 100 100 150 -55 . 150 -55 . 150 Unit V , Characteristics Breakdown voltage I(BR) = 100 µA V(BR) VF Symbol min. 4 Values typ. max. - Unit V , voltage matching1) IF = 10 mA AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz, all other types VR = 0 V, f = 1 MHz, BAT15-099R Differential forward resistance IF = 10 mA / 50 mA 1V - CT RF , C 0.3 10 1 25 C 0.2 0 10 0.1 0.0 10 -1 0 2 V VR 4 0 1
Infineon Technologies
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TSLP marking NP 47 SOT143
Abstract: Value 4 110 100 100 100 100 100 100 100 Unit V mA mW Tj Top Tstg Symbol RthJS 150 -55 . 150 , 100 µA V(BR) VF Symbol min. 4 Values typ. max. - Unit V Forward voltage I F = 1 mA I F , mA - AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz Differential forward resistance , -1 0 2 V VR 4 0 1 2 3 V 4 VR Forward current IF = (VF) TA = , 60 50 40 10 -1 30 20 10 10 -2 0.0 0.5 V 1.0 VF 0 0 15 30 45 60 Infineon Technologies
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Abstract: (9.3 GHz) 6.0 (16.0 GHz) 7.0 (16.0 GHz) 9.0 (16.0 GHz) V B R (m in) V 3 3 3 3 3 3 3 3 3 3 3 c T ( ty p ) r T (m ax) pF 0.35 0.35 0.35 0.35 0.25 0.25 0.20 0.20 0.15 0.15 0.12 V F (typ) V , ) .18.0 (Ku) .40.0 (Ka) V 3 3 3 3 3 3 3 3 3 3 3 pF 0.25 0.25 0.25 0.25 0.20 0.20 0.17 0.17 0.13 , GHz) 5.5 (6 GHz) 5.5 (9.3 GHz) 6.0 (16 GHz) 9.0 (16 GHz) 5.5 (3 GHz) 6.5 (3 GHz) V B R (m in) V 3 3 3 3 3 3 3 r T (ty p ) pF 0.25 0.20 0.17 0.13 0.10 0.25 0.25 c T (m ax) V F (typ) V -
OCR Scan
BAT14-014 BAT14-034 BAT14-036 BAT14-044 BAT14-064 BAT14-074
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