BAS19LT1 - Datasheet Archive

 

SWITCHING DIODE Features Power dissipation P D : 225 mW (Tamb=25 C) Pluse Drain I F : 200 mA Reverse Voltage V R : 120V Operating

 

BAS19LT1 BAS19LT1 SWITCHING DIODE Features Power dissipation P D : 225 mW (Tamb=25 C) Pluse Drain I F : 200 mA Reverse Voltage V R : 120V Operating and storage junction temperature range T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 ANODE-CATHODE 3 Unit:mm 1 ANODE 2 CATHODE Marking:J Electro-Optical Characteristics Parameter (Ta=25 C) Symbol Test Condition MIN. MAX. 120 Unit Reverse breakdown voltage V (BR) I R =100 A Reverse Voltage leakage current IR V R =100V 0.1 Forward Voltage VF I F =100mA I F =200mA 1000 1250 mV Diode Capacitance CD V R =0V 5 pF Reverse Recovery Time t rr 50 nS f=1MHz V A BAS19LT1 BAS19LT1 Typical Characteristics FORWARD VOLTAGE (mV) 3500 3000 2500 T A =-55 C 2000 1500 T A =155 C 1000 T A =25 C 500 0 0.1 0.2 0.5 1 2 5 10 20 50 100 200 FORWARD VOLTAGE(mA) Forward Voltage REVERSE CURRENT (nA) 7000 6000 T A =155 C 5000 4000 3000 6 5 4 3 T A =25 C 2 1 0 T A =-55 C 1 2 5 10 20 50 REVERSE VOLTAGE(V) Reverse Leakage 100 200 300