BAS16T/BAW56T/BAV70T/BAV99T BAS16T BAW56T BAV70T BAV99T

SOT-523 Plastic-Encapsulate Diodes BAS16T/BAW56T/BAV70T/BAV99T SOT-523 SWITCHING DIODE FEATURES Power dissipation 150 PD: mW

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diodes BAS16T/BAW56T/BAV70T/BAV99T BAS16T/BAW56T/BAV70T/BAV99T SOT-523 SWITCHING DIODE FEATURES Power dissipation 150 PD: mW (Tamb=25) Forward Current 75 m A IF: Reverse Voltage 85 V VR: Operating and storage junction temperature range TJ, Tstg: -55 to +150 BAS16T BAS16T Marking: A2 BAW56T BAW56T Marking: JD BAV70T BAV70T Marking: JJ ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol BAV99T BAV99T Marking: JE unless otherwise specified) Test conditions MIN MAX UNIT 2 µA VR=25V 0.03 µA 715 IF=10mA 855 IF=50mA 1000 IF=150mA Diode VR=75V IF=1mA Forward IR= 100µA IR2 Reverse voltage V(BR) IR1 Reverse breakdown voltage 1250 VR=0V, f=1MHz 1.5 pF 4 nS 85 V leakage current voltage capacitance Reverse recovery time VF CD t rr mV Typical Characteristics BAS16T/BAW56T/BAV70T/BAV99T BAS16T/BAW56T/BAV70T/BAV99T