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BAR61E6327HTSA1 Infineon Technologies AG Pin Diode, Silicon, visit Digikey Buy
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Part : BAR 61 E6327 Supplier : Infineon Technologies Manufacturer : Avnet Stock : 12,000 Best Price : €0.2319 Price Each : €0.3889
Part : BAR61E6327HTSA1 Supplier : Infineon Technologies Manufacturer : Avnet Stock : 36,000 Best Price : €0.2439 Price Each : €0.3869
Part : BAR61 Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 7,945 Best Price : $0.29 Price Each : $0.29
Part : BAR61E6327 Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 9,000 Best Price : $0.29 Price Each : $0.29
Part : BAR61E6327HTSA1 Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 1,227 Best Price : $0.29 Price Each : $0.29
Part : RW1S0BAR619F Supplier : Ohmite Manufacturer : Bristol Electronics Stock : 86 Best Price : - Price Each : -
Part : RW1S0BAR619FT Supplier : Ohmite Manufacturer : Bristol Electronics Stock : 100 Best Price : $1.0125 Price Each : $2.70
Part : BAR61E6327HTSA1 Supplier : Infineon Technologies Manufacturer : RS Components Stock : 2,900 Best Price : £0.2150 Price Each : £0.2380
Part : BAR 61 E6327 Supplier : Infineon Technologies Manufacturer : Chip One Exchange Stock : 3,000 Best Price : - Price Each : -
Part : BAR61E6327HTSA1 Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 2,995 Best Price : $0.4144 Price Each : $0.4144
Part : BAR61E6327HTSA1 Supplier : Infineon Technologies Manufacturer : Farnell element14 Stock : - Best Price : £0.1530 Price Each : £0.1970
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BAR61 Datasheet

Part Manufacturer Description PDF Type
BAR61 Infineon Technologies RF Switch, RF Attenuator Original
BAR61 Infineon Technologies Silicon PIN Diode Original
BAR61 Infineon Technologies Band Switching and RF Attenuation; Package: PG-SOT143-4; I<sub>F</sub> (max): 140.0 mA; C<sub>T</sub> (max): 0.5 pF; r<sub>F</sub> (typ): 7.0 Ohm; T<sub>rr</sub> (typ): 1,000.0 ns; Configuration: Single; Original
BAR61 Infineon Technologies DIODE PIN ATTENUATOR/SWITCH 100V 4SOT-143 Original
BAR61 Kexin Silicon PIN Diode Original
BAR61 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original
BAR61 Siemens Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz) Original
BAR61 TY Semiconductor Silicon PIN Diode - SOT-143 Original
BAR61 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BAR61E6327 Infineon Technologies RF Diodes, Discrete Semiconductor Products, DIODE RF DUAL 100V 140M SOT-143 Original
BAR61E6327 Infineon Technologies DIODE PIN ATTENUATOR/SWITCH 100V 4SOT-143 Original

BAR61

Catalog Datasheet MFG & Type PDF Document Tags

marking code L7S

Abstract: marking L8s BAR1. / BAR61. Silicon PIN Diode · RF switch, RF attenuator for frequencies above 10 MHz · , please refer to Application Note Thermal Resistance 1 2005-11-02 BAR1. / BAR61. , . / BAR61. Diode capacitance CT = (VR) Forward resistance rf = (I F) f = 100MHz f = Parameter , °C 150 TS VF 3 2005-11-02 BAR1. / BAR61. Application circuit for , 2.2 k EHM07026 4 2005-11-02 Package SOT143 BAR1. / BAR61. 3 2 0.1 MAX
Infineon Technologies
Original
BAR14-1 BAR15-1 BAR16-1 marking code L7S marking L8s BCW66

ym 238

Abstract: marking code L7S BAR1./BAR61. Silicon PIN Diode · RF switch, RF attenuator for frequencies above 10 MHz · , 2007-04-19 BAR1./BAR61. Electrical Characteristics at TA = 25°C, unless otherwise specified , I-region width 2 2007-04-19 BAR1./BAR61. Diode capacitance CT = (VR) Forward resistance , 30 45 60 75 90 105 120 °C 150 TS VF 3 2007-04-19 BAR1./BAR61. , 4.7 k 1.8 k 2.2 k EHM07026 4 2007-04-19 Package SOT143 BAR1./BAR61. 2
Infineon Technologies
Original
ym 238 l8s 15 0154B
Abstract: BAR1./BAR61. Silicon PIN Diode · RF switch, RF attenuator for frequencies above 10 MHz · Low , RthJA please refer to Application Note Thermal Resistance 1 2011-06-14 BAR1./BAR61. , ./BAR61. Diode capacitance CT = (VR ) f = Parameter 1.0 CT pF BAR 14-1.16-1 EHD07067 Forward , 15 30 45 60 75 90 105 120 °C 150 TS 3 2011-06-14 BAR1./BAR61. , 1.8 k 2.2 k EHM07026 4 2011-06-14 Package SOT143 BAR1./BAR61. Package Outline Infineon Technologies
Original
Abstract: BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Silicon PIN Diode â'¢ RF switch, RF attenuator for , Application Note Thermal Resistance 1 Feb-21-2005 BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Electrical , -21-2005 BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Diode capacitance CT = Æ' (VR) Forward resistance rf = Æ' (I , -1 / BAR16-1 / BAR61. Application circuit for attenuation networks with diode BAR61 50 k â"¦ +12 V , BAR14-1 BAR15-1 3 BAR16-1 3 BAR61 4 3 3 D 1 D 1 D 2 1 2 1 D 2 Infineon Technologies
Original

BAR61

Abstract: marking L7s diode BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Silicon PIN Diode RF switch, RF attenuator for frequencies , Parameter Dec-20-2002 BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Electrical Characteristics at TA = 25 , -1 / BAR61. 1.0 CT f = Parameter (VR) Forward resistance rf = f = 100MHz BAR , -1 / BAR16-1 / BAR61. Application circuit for attenuation networks with diode BAR61 50 k +12 V 1 , -1 BAR15-1 3 BAR16-1 3 BAR61 4 3 3 D 1 D 1 D 2 1 2 1 D 2 D 1 D
Infineon Technologies
Original
marking L7s diode 100MH EHD07066 EHD07065
Abstract: BAR1./BAR61. Silicon PIN Diode â'¢ RF switch, RF attenuator for frequencies above 10 MHz â , refer to Application Note Thermal Resistance 1 2007-04-19 BAR1./BAR61. Electrical , , IR = 6 mA, measured at IR = 3 mA, RL = 100 â"¦ I-region width 2 2007-04-19 BAR1./BAR61. , 90 105 120 °C 150 TS VF 3 2007-04-19 BAR1./BAR61. Application circuit for , â"¦ 1.8 k â"¦ 2.2 k â"¦ EHM07026 4 2007-04-19 Package SOT143 BAR1./BAR61. 2 Infineon Technologies
Original

BAR16-1

Abstract: BAR1./BAR61. Silicon PIN Diode · RF switch, RF attenuator for frequencies above 10 MHz · Low , please refer to Application Note Thermal Resistance 1 2007-04-19 BAR1./BAR61. Electrical , typ. IR VF 1.05 100 1000 1.25 V 2 2007-04-19 BAR1./BAR61. Diode capacitance CT = , 90 105 120 °C 150 TS 3 2007-04-19 BAR1./BAR61. Application circuit for , 4 2007-04-19 Package SOT143 BAR1./BAR61. Package Outline 0.15 MIN. 2.9 ±0.1 1.9
Infineon Technologies
Original

a3 sot143

Abstract: MARKING 61s BAR60, BAR61 Silicon PIN Diodes 3 RF switch, RF attenuator for frequencies above 10 MHz 4 2 BAR60 BAR61 1 1 3 4 1 VPS05178 3 EHA07013 2 4 EHA07014 2 , = A1 SOT143 BAR61 61s 1=C2/C3 2 = A1 3=A2/C1 4 = A3 SOT143 Value Unit , calculation of RthJA please refer to Application Note Thermal Resistance 1 Jul-31-2001 BAR60, BAR61 , = 6 mA, I R = 3 mA 2 Jul-31-2001 BAR60, BAR61 Forward current IF = f (VF ) Forward
Infineon Technologies
Original
a3 sot143 MARKING 61s EHD07069 EHD07070 EHD07071 EHM07025
Abstract: BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Silicon PIN Diode · RF switch, RF attenuator for , Resistance 1 Feb-21-2005 BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Electrical Characteristics at TA = , . max. Unit nA 1.05 100 1000 1.25 V 2 Feb-21-2005 BAR14-1 / BAR15-1 / BAR16-1 / BAR61. , -1 / BAR61. Application circuit for attenuation networks with diode BAR61 50 k +12 V 1 nF V Reg , -1 3 BAR15-1 3 BAR16-1 3 BAR61 4 3 D 1 D 3 D 1 D 2 D 1 D 2 D 1 D 2 D Infineon Technologies
Original

marking code L7S

Abstract: marking code 61s BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Silicon PIN Diode · RF switch, RF attenuator for , Resistance 1 Feb-21-2005 BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Electrical Characteristics at TA = , . max. Unit nA 1.05 100 1000 1.25 V 2 Feb-21-2005 BAR14-1 / BAR15-1 / BAR16-1 / BAR61. , -1 / BAR61. Application circuit for attenuation networks with diode BAR61 50 k +12 V 1 nF V Reg , -1 3 BAR15-1 3 BAR16-1 3 BAR61 4 3 D 1 D 3 D 1 D 2 D 1 D 2 D 1 D 2 D
Infineon Technologies
Original
marking code 61s

marking L7s

Abstract: marking L7s diode BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Silicon PIN Diode RF switch, RF attenuator for , Resistance 1 Dec-20-2002 BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Electrical Characteristics at TA = , -20-2002 BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Diode capacitance CT = (VR) f = Parameter BAR 14-1.16-1 , TS 3 Dec-20-2002 BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Application circuit for , BAR14-1 3 BAR15-1 3 BAR16-1 3 BAR61 4 3 D 1 D 3 D 1 D 2 D 1 D 2 D 1 D 2
Infineon Technologies
Original
marking L7s

BAR60

Abstract: BAR61 Diodes SMD Type Silicon PIN Diodes BAR60;BAR61 Unit: mm Features RF switch RF attenuator for frequencies above 10 MHz Absolute M axim um R atings T a = 25 P aram eter S ym bol Total power dissipation, T S 65 (N ote 1) 100 V IF Forward current U nit VR R everse voltage V alue 140 mA P tot 250 mW Tj 150 S torage tem perature range , 45 IF = 10 mA 7 Differential forward resistance rf Marking Type BAR60 BAR61
Kexin
Original
smd rf transistor marking smd transistor js
Abstract: Product specification BAR60;BAR61 Unit: mm Features RF switch RF attenuator for frequencies above 10 MHz Absolute M axim um R atings T a = 25 P aram eter S ym bol Total power dissipation, T S 65 (N ote 1) Junction tem perature 100 V IF Forward current U nit VR R everse voltage V alue 140 mA P tot 250 mW Tj 150 S torage tem , 45 IF = 10 mA 7 Differential forward resistance rf Marking Type BAR60 BAR61 TY Semiconductor
Original

a3 sot143

Abstract: EHA07013 diode BAR61 50 k 1 nF +12 V V Reg. 1 nF 1 nF 12 k BC 238 1 k 1 nF BAR 61 1
Infineon Technologies
Original
BC238 EHD07072

BAR64-03W

Abstract: BA585 Microwave, RF & Tuner Diodes PIN (General Purpose, Switching) Diodes T yp e M a x im u m Ratings , _ _ . . . . , For com plete package outlines, refer to pages PO-1 through PO-6 Characteristics (Ta=25°C) Case V BA582 BA585 BA586 BA592 BA595 BA596 BA885 BA886 BAR14-1 (Dual) BARI 5-1 (Dual) BARI 6-1 (Dual) BARI 7 BAR60 (Triple) BAR61 (Triple) BAR63 BAR63-03W BAR63-04 (Dual) BAR63-05 (Dual) BAR63-06 (Dual) BAR63-07 (Dual) BAR64 BAR64-03W BAR64-04 (Dual) BAR64-05 (Dual) BAR64-06 (Dual) BAR64
-
OCR Scan
BAR64-07 BAR65-03W BAR66 BAR80

BB409

Abstract: BA389 SIEMENS AKTIEN6ESELLSCHAF bOE D fl23SbDS D G 4 S 4 n 3G5 « S I E Ê Microwave, RF & Tuner Diodes T 07-01 - PIN (General Purpose, Switching) Diodes IType Maximum Ratings VR V BA582 BA585 BA586 BA592 BA595 BA885 BA886 BAR 14-1 (Dual) BAR15-1 (Dual) BAR 16-1 (Dual) BAR17 BAR60 (Triple) BAR61 (Triple) BAR63-03 BAR64 BAR66 (Dual) BAT18 BAT 18-04 (Dual) BAT18-05(Dual) BAT 18-06 (Dual) 35 50 50 35 50 50 50 100 100 100 100 100 100 150 200 150 35 35 35 35 For complete package outlines
-
OCR Scan
BA389 BB409 d bb833 PACKAGE OUTLINES sod bb609 BA282 BB419 BB439 BB512 BB515
Abstract: 5 BAR 60 BAR61 -
OCR Scan

BGT24MTR11

Abstract: AZ1045-04F Reference Packages BA592 BA595 BA885 BA892 BA892-02V BA895 BAR14-1 BAR15-1 BAR16-1 BAR61 BAT18
Infineon Technologies
Original
BFR181W BGT24MTR11 AZ1045-04F BAR86-02LRH BGA628L7 24GHz Radar ALPHA&OMEGA DATE CODE BF517 BF770A BF771 BF799 BF799W BFP181

cdma Booster schematic

Abstract: uwb transceiver BC848 BAR14-1, BAR61 BA595, BA895 Recommended Products in RED ! © 2007 Infineon Technologies AG
Infineon Technologies
Original
cdma Booster schematic uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A B132-H9014-X-X-7600 NB07-1094

XM0830SJ

Abstract: smd code marking 162 sot23-5 -02V BA895 BAR14-1 BAR15-1 BAR16-1 BAR61 BAT18-04 BAT18-05 Characteristics (TA = 25°C) typ. Values
Infineon Technologies
Original
XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 sot-363 inf BF775 BFP181R BFP182 BFP182R BFP182W BFP183

marking jls

Abstract: BAR1./BAR61. Silicon PIN Diode · RF switch, RF attenuator for frequencies above 10 MHz · , ) package 1) · Qualified according AEC Q101 BAR14-1 BAR15-1 ! BAR16-1 ! BAR61 " ! ! , , , , , Type BAR14-1 BAR15-1 BAR16-1 BAR61 , 2007-04-19 BAR1./BAR61. Electrical Characteristics at TA = 25°C, unless otherwise specified , I-region width 2 2007-04-19 BAR1./BAR61. Diode capacitance CT = (VR) Forward resistance
-
OCR Scan
marking jls
Abstract: BAR1./BAR61. Silicon PIN Diode â'¢ RF switch, RF attenuator for frequencies above 10 MHz â , compliant) package â'¢ Qualified according AEC Q101 BAR14-1 BAR15-1 ! BAR16-1 ! BAR61 " ! ! , #31; , #31; , #31; , #31; , #31; Type BAR14-1 BAR15-1 BAR16-1 BAR61 , refer to Application Note Thermal Resistance 1 2007-04-19 BAR1./BAR61. Electrical , , IR = 6 mA, measured at IR = 3 mA, RL = 100 â"¦ I-region width 2 2007-04-19 BAR1./BAR61 -
OCR Scan
Q62702-A786 Q62702-A120 015DS01 0120EQ2 012D2D3

a786

Abstract: BAR61 BAR1./BAR61. Silicon PIN Diode · RF switch, RF attenuator for frequencies above 10 MHz · Low , Qualified according AEC Q101 BAR14-1 ! BAR15-1 ! BAR16-1 ! BAR61 " , ! , ! , , , , , , , Type BAR14-1 BAR15-1 BAR16-1 BAR61 Package SOT23 SOT23 SOT23 SOT143 Configuration series common , please refer to Application Note Thermal Resistance 1 2007-04-19 BAR1./BAR61. Electrical , typ. IR VF 1.05 100 1000 1.25 V 2 2007-04-19 BAR1./BAR61. Diode capacitance CT =
Siemens
Original
a786 100 mhz diode marking code js 3 pin diode 60bar

diode Marking Code 61

Abstract: 60bar 5 BAR 60 BAR61
-
OCR Scan
diode Marking Code 61
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