BA61W12SAT BA61W12ST - Datasheet Archive

 

Regulator ICs Dual output voltage regulator with power saving BA61W12ST The BA61W12ST is a general-purpose, low saturation power

 

BA61W12SAT BA61W12SAT Regulator ICs Dual output voltage regulator with power saving BA61W12ST BA61W12ST The BA61W12ST BA61W12ST is a general-purpose, low saturation power supply with two outputs : 10V, 1A and 5V, 500mA. The IC is available in a compact TO220FP-5 package. The outputs can be turned off during the power saving state with the built-in switch. Also built in the IC are an overcurrent protection circuit, an overvoltage protection circuit, and a thermal shutdown circuit. Applications Car audio systems, VCRs, facsimiles, air conditions, and other household and industrial equipment Features 1) Minimum I / O voltage differential is 0.5V or less. 2) Built-in protection circuits against overcurrent, overvoltage, and overheat. 3) Available in a compact TO220FP-5 package (pins are bendable). 4) Zero power saving current. (Typ.) Absolute maximum ratings (Ta=25°C) Parameter Power supply voltage Power dissipation Symbol Limits Unit VCC 35 V 20001 Pd mW Topr -40~+85 °C Storage temperature Tstg -55~+150 °C Peak applied voltage VCCPeak 502 V Operating temperature 1 Reduced by 16mW for each increase in Ta of 1°C over 25°C. 2 Applied time is less than 200 msec. (tr1msec) tr1ms 50V 35V Max.200ms 0V Recommended operating conditions (Ta=25°C) Parameter Power supply voltage Symbol Min. Typ. Max. Unit VCC 11 15 25 V BA61W12SAT BA61W12SAT Regulator ICs Block diagram VCC REFERENCE VOLTAGE 2 1 10V OUT1 + CTL 5 GND 5V 3 4 + Pin descriptions Pin No. Pin name 1 OUT1 2 VCC Function Output 1 (10V,1A) Power supply 3 GND Ground 4 OUT2 Output 2 (5V,500mA) 5 CTL ON/OFF switch OUT2 BA61W12SAT BA61W12SAT Regulator ICs Input / output circuits OUT1, 2 VCC (2pin) CTL (5pin) 25k 1, 4pin 14k (1pin) 6k (4pin) 25k 2k GND (3pin) GND (3pin) Electrical characteristics (unless otherwise noted, Ta=25°C, VCC=13.0V) Conditions Test circuit Symbol Min. Typ. Max. Unit Power save supply current IST - 0 10 µA OFF mode Fig.4 Bias current Ib - 3.0 5.0 mA ON mode Fig.4 VO1 9.5 10.0 10.5 V IO1=500mA Fig.1 IO1=500mA VCC=9.5V Fig.3 Parameter Output voltage 1 Minimum I/O voltage differential 1 Output current capacity 1 Ripple rejection ratio 1 VO1 - 0.3 0.5 V IO1 1.0 - - A 55 - dB - 50 100 mV VCC=1125V, IO=500mA Fig.1 - 100 150 mV IO=5mA1A Fig.1 IOS1 - 150 - mA VCC=25V Fig.5 R.R1 - Input stability 1 Reg.I1 Load regulation 1 Reg.L1 Output short-circuit current 1 Fig.1 IO1=500mA, f=120Hz eIN=1Vrms Fig.2 Output voltage 2 Minimum I/O voltage differential 2 Output current capacity 2 VO2 4.75 5.0 5.25 V IO2=350mA Fig.1 VO2 - 0.3 0.5 V IO2=350mA, VCC=4.75V Fig.3 IO2 500 - - mA Fig.1 R.R2 - 60 - dB IO2=350mA, f=120Hz eIN=1Vrms Input stability 2 Reg.I2 - 50 100 mV VCC=625V, IO=350mA Fig.1 Load regulation 2 Reg.L2 - 50 100 mV IO=5mA500mA Fig.1 IOS2 - 100 - mA VCC=25V Fig.5 ON mode voltage Vth1 2.0 - - V Output ACTIVE MODE Fig.6 OFF mode voltage Vth2 - - 0.8 V Output OFF MODE Fig.6 IIN - 150 - µA Vth=5V Fig.7 Ripple rejection ratio 2 Output short-circuit current 2 Fig.2 Input high level current Not designed for radiation resistance. Note : All the characteristic values are measured with a 0.33µF-capacitor connected to the input pin and 22µF-capacitor connected to the output pin. Meaurements are made by using a pulse all cases but noise voltage and the ripple rejection ratio. BA61W12SAT BA61W12SAT Regulator ICs Measurement circuits OUT1 VCC OUT2 CTL GND 0.33µ + 22µ V VCC 5V + IO1 22µ V IO2 VCC=15V, IO=500mA when measuring output voltage 1 VCC=15V, IO=350mA when measuring output voltage 2 VCC=1125V, IO=500mA when measuring input stability 1 VCC=625V, IO=350mA when measuring input stability 2 VCC=15V, IO=5mA1A when measuring load regulation 1 VCC=15V, IO=5mA500mA when measuring load regulation 2 VCC=15V when measuring output current capacity 1 VCC=15V when measuring output current capacity 2 Fig.1 Circuit for measuring output voltage,input stability,load regulation,and output current capacity VCC OUT1 105W VCC CTL + GND OUT2 + 22µ 0.33µ 100µ + eIN=1Vrms f=120Hz 5V 500mA 22µ 350mA VCC=15V, IO1=500mA when measuring ripple rejection ratio 1 VCC=15V, IO2=350mA when measuring ripple rejection ratio 2 Fig.2 Circuit for measuring ripple rejection ratio BA61W12SAT BA61W12SAT Regulator ICs V V OUT1 VCC CTL GND OUT2 + 22µ V 0.33µ VCC + 500mA 22µ 5V V 350mA Fig.3 Circuit for measuring minimum I/O voltage difference OUT1 VCC A CTL GND OUT2 + 0.33µ VCC + 22µ 22µ 5V VCC=15V, IO=0mA, VCTL=5V when measuring bias current VCC=15V, IO=0mA, VCTL=5V when power save supply current Fig.4 Circuit for measuring bias current power save supply current OUT1 VCC CTL GND OUT2 + 0.33µ 22µ VCC=25V + 22µ A 5V A Fig.5 Circuit for measuring output short-circuit current BA61W12SAT BA61W12SAT Regulator ICs OUT1 VCC OUT2 CTL GND + VCC=15V 22µ 0.33µ + 2.0V V 22µ V 0.8V Fig.6 Circuit for measuring mode switching voltage OUT1 VCC OUT2 CTL GND + VCC=15V 0.33µ + 22µ A 5V Fig.7 Circuit for measuring input high lebel current Application circuit OUTPUT1 + 22µF Vcc OUTPUT2 GND CTL + 0.33µF 5V Fig.8 22µF 22µ BA61W12SAT BA61W12SAT Regulator ICs Operation notes (1) The application circuit of Fig.8 is recommended for use. Make sure to confirm the adequacy of parts characteristics. When using the circuit with changes to external circuit constants, make sure to leave sufficient margins in consideration of fluctuations in the IC and external components including static and transitional characteristics. Note that ROHM has not carried out extensive survey regarding the patent right of this application. (2) Operating power supply voltage When operating within the proper ranges of power supply voltage and ambient temperature, most circuit functions are guaranteed. Although the rated values of electrical characteristics cannot be absolutely guaranteed, characteristic values do not change drastically within the proper ranges. (3) Power dissipation (Pd) Refer to the power dissipation characteristics in Fig.12. If power dissipation exceeds the allowable limit, the functionality of the IC will be degraded (such as reduction of current capacity by increased chip temperature). Make sure to use the IC within the allowable range of power dissipation with a sufficient margin. (4) Preventing oscillation at each output and bypass capacitor To stop output oscillation, make sure to connect a capacitor between GND and each output pin (capacitance of at least 10µF over the whole operating temperature range is recommended). Oscillation can occur if capacitance is susceptible to temperature. We recommended using a tantalum capacitor with minimal changes in capacitance. Also, output can be further stabilized by connecting a bypass capacitor of about 0.33µF between the input pin and GND. Place the capacitor as near as possible to the input pin. (5) Overcurrent protection circuit An overcurrent protection circuit is installed in each output system, based on the respective output current. This prevents IC destruction due to overcurrent, by limiting the current with a curve shape of "7" in the voltagecurrent graph. The IC is designed with margins so that current flow will be restricted and latching will be prevented even if a large current suddenly flows through a large capacitor. Note that these protection circuits are only good for preventing damage from sudden accidents. Make sure your design does not cause the protection circuit to operate continuously under transitional conditions (for instance, if output is clamped at 1Vf or higher, short mode circuit operates at 1Vf or lower). Note that the circuit ability is negatively correlated with temprature. (6) Thermal protection circuit A built-in thermal protection circuit prevents thermal damage to the IC. All outputs are turned off when the circuit operates, and revert to the original state when the temperature drops to a certain level. (7) We recommend installing a bypass line with a diode in your application if there is a mode where potential difference between each output and input (VCC) or GND is reversed from the normal state. A reversed mode may cause damage to the IC. (8) Although the quality of this IC is rigorously controlled, the IC may be destroyed when the applied voltage or the operating temperature exceeds its absolute maximum ratings. Because short mode or open mode cannot be specified when the IC is destroyed, be sure to take physical safety measures, such as fusing, if any of the absolute maximum ratings might be exceeded. BA61W12SAT BA61W12SAT Regulator ICs (9) Recommended to put diode for protection purpose in case of output pin connected with large load of inpedance or reserve current occurred at initial and output off. (Example) OUTPUT (10) When used within a strong magnetic field, be aware that there is a slight possibility of malfunction. (11) We are confident in recommending the above application circuit example, but we ask that you carefully check the characteristics of this circuit before using it. If using this circuit after modifying other external circuit constants, be careful to ensure adequate margins for variation between external devices and this IC, including not only static characteristics but also transient characteristics. This IC is a bipolar IC which (as shown in Fig. 9) has P+ isolation in the P substrate and between the various pins. A P-N junction is formed form this P layer and the N layer of each pin. For example the relation between each potentials is as follows, (When GND > PinB and GND > PinA, the P-N junction operates as a parasitic diode.) (When PinB > GND > PinA, the P-N junction operates as a parasitic transistor.) Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits as well as operation faults and physical damage. Accordingly, you must not use methods by which parasitic diodes operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin. Transistor (NPN) Resistance (Pin B) (Pin A) B C E GND N P + P + + P P N N N P substrate P N N P substrate Parasitic diode GND + P N Parasitic diode or transistor (Pin B) GND (Pin A) C Parasitic diode B E GND GND Parasitic diode or transistor Fig.9 Simplifield structure of bipolar IC. BA61W12SAT BA61W12SAT Regulator ICs Electrical characteristic curves 12 10 10 9 8 7 6 VO2 5 4 3 2 28 Ta=25°C IO=0mA VO1 VO2 9 8 POWER DISSIPATION : Pd (W) VCC=15V Ta=25°C VO1 OUTPUT VOLTAGE : VO (V) OUTPUT VOLTAGE : VO (V) 11 7 6 5 4 3 2 (1) 20 16 12 (2) 8 (3) 4 (4) 1 1 0 0 0 0 500 1000 1500 2000 OUTPUT CURRENT : IO (mA) 0 6 0 12 18 24 30 36 42 48 54 60 External dimensions (Units : mm) 4.5 + 0.3 - 0.1 3.2 ± 0.1 2.8 (2.0) + 0.3 - 0.1 + 0.2 - 0.1 17.5 25.8 7.0 23.4 17.0 - 0.2 10.0 - 0.1 8.0 ± 0.2 8.0 ± 0.2 0.7 31.5Max. + 0.4 2.8 + 0.2 - 0.1 12.0 ± 0.2 1.8 ± 0.2 3.2 ± 0.1 + 0.3 - 0.1 1.2 1.2 ± 0.2 + 0.4 - 0.2 12.0 ± 0.2 17.0 13.5Min. 7.0 + 0.3 - 0.1 4.5 1.8 ± 0.2 + 0.3 + 0.3 - 0.1 0.8 1.2 0.8 0.5 ± 0.1 1 2 3 4 5 1.778 1.778 0.5 + 0.1 (2.85) 4.25 8.15 2.85 12345 TO220FP-5 TO220FP-5 (V5) 50 75 100 125 150 Fig.12 Thermal derating characteristics Fig.11 Output voltage characteristic (Typ.) characteristics(Typ.) 10.0 25 AMBIENT TEMPERATURE : Ta (°C) POWER SUPPLY VOLTAGE : VCC (V) Fig.10 Output current capacity (1) With infinite heat sink (2) With AI heat sink (100×100×2mm2) (3) With AI heat sink (50×50×2mm2) (4) Without heat sink Note : When using AI heat sink, a tightening torque of 6 (kgcm) and silicon grease is applied. 24