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Part Manufacturer Description Datasheet BUY
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil

BA27 chip transistor

Catalog Datasheet MFG & Type PDF Document Tags

BA100 diode

Abstract: BA115 )M, Byte/Word Mode - UtRAM : 2,097,152 x 16 bit · Two Chip Enable (Flash) - Two CE balls control , The KADxx0300B featuring single 3.0V power supply is a Multi Chip Package Memory which combines two , advanced CMOS technology using one transistor memory cell. The device supports deep power down mode for , N.C A16 CEF1 DQ13 DQ15 BYTEF /A-1 Flash Chip Enable 1 (Flash Memory) Flash Chip Enable 2 (Flash Memory) CSU D.N.U Word/Byte selection (Flash Memory) CEF2 E BYTEF Chip Enable
Samsung Electronics
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transistor sr61

Abstract: BA107 x 10.4 mm, 0.8 mm pitch The K5T6432YT(B)M featuring single 3.0V power supply is a Multi Chip , . The 32Mbit UtRAM is fabricated by SAMSUNG' advanced s CMOS technology using one transistor memory , Vss DQ14 Lower Byte Enable (UtRAM) F-CE F-Vcc Chip Enable (Flash Memory) ZZ K , Y-Gate / Sense Amp. A2 A1 A0 Status/ ID Register Multi Plexer Chip Enable F-CE Output Enable , E8000H-EFFFFH BA28 32 Kwords E0000H-E7FFFH BA27 32 Kwords D8000H-DFFFFH BA26 32 Kwords
Samsung Electronics
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transistor sr61 BA107 transistor BA29 BA27 chip transistor BA106 BA99 08MAX
Abstract: . 3-1 ANIC Chip Set in the Central Office Terminal (CO T). 3-1 , 9-5 9-6 9-7 9-8 9-9 9-10 9-11 Page Block Diagram of the ANIC Chip S e t , .3-1 Functional Block Diagram of the PSB 4450/4451 Chip S et.4-1 Voice P a th , chip set to interface analog voice signals to digital terminals such as DSL transceivers. Its , Intefface l PSB 4450 (ANIC-A) GPIO Block Diagram of the ANIC Chip Set Note: The Block Diagram -
OCR Scan

PEB22521

Abstract: z73 trigger transformer Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 ANIC Chip Set , 39 Figure 40 Figure 41 Figure 42 Data Sheet Page Block Diagram of the ANIC Chip Set . . . . , . . . . . . . . 20 Functional Block Diagram of the PSB 4450/PSB 4451 Chip Set . . . . . 21 Voice , PSB 4450 / PSB 4451 ANIC Overview Preliminary 1 Overview ANIC is a chip set to interface , (ANIC-A) GPIO GPIO Figure 1 Block Diagram of the ANIC Chip Set Note: The block diagram is
Infineon Technologies
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PEB22521 z73 trigger transformer k3210 AR20 BA22 BA23 D-81541

SAMSUNG MCP

Abstract: ECH information KBB0xB400M featuring single 3.0V power supply is a Multi - Standby Mode/Auto Sleep Mode : 10µA Chip Package , outermost boot blocks at VIL, 256Mbit NAND Flash and 64Mbit Unit Transistor CMOS RAM. 64Mbit NOR Flash , CMOS tech- Block Erase Time : 2ms(Typ.) nology using one transistor memory cell. The device supports , (NOR,UtRAM) ZZ Deep Power Down (UtRAM) CER1 Chip Enable (NOR) UB Upper Byte Enable (UtRAM) CER2 Chip Enable (NOR) LB Lower Byte Enable (UtRAM) CEN Chip Enable (NAND
Samsung Electronics
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SAMSUNG MCP ECH information KBB0xB400M BA5101 BA102 BGA-60 B400M

fr53

Abstract: ic ntp- 3000 . . . . . . . . . . . . . . . . . . . 19 ANIC Chip Set in the Central Office Terminal (COT) . . . . , 39 Figure 40 Figure 41 Figure 42 Data Sheet Page Block Diagram of the ANIC Chip Set . . . . , . . . . . . . . 19 Functional Block Diagram of the PSB 4450/PSB 4451 Chip Set . . . . . 20 Voice , Overview ANIC is a chip set to interface analog voice signals to digital terminals such as DSL , ANIC Chip Set Note: The block diagram is described in more detail in the section "Functional
Infineon Technologies
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fr53 ic ntp- 3000 FR52 LX41 Z31 SMD P-TSSOP-28-1

SAMSUNG MCP

Abstract: KBB05A500 pitch GENERAL DESCRIPTION The KBB0xA500M featuring single 3.0V power supply is a Multi Chip Package Memory which combines two 64Mbit NOR Flash, 128Mbit NAND Flash and 64Mbit Unit Transistor CMOS RAM , RESET R/BF Chip Enable (NOR) Chip Enable (NAND) CSU A12 Chip Enable (NOR) CER2 CEF R/BR CER1 Chip Enable (UtRAM) D A5 A18 ALE N.C VccU WE A9 A13 E , BA27 0 0 1 1 0 1 1 X X X 64/32 1B0000H-1BFFFFH 0D8000H-0DFFFFH
Samsung Electronics
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KBB05A500 NAND FLASH BGA UtRAM Density ba38 transistor transistor ba47 ba43 A500M

KBB0XA300M

Abstract: transistor ba47 supply is a Multi Chip Package Memory which combines two 64Mbit NOR Flash, 128Mbit NAND Flash and 32Mbit Unit Transistor CMOS RAM. 64Mbit NOR Flash memory is organized as 8M x8 or 4M x16 bit, 128Mbit , CLE N.C VccF RESET R/BF A12 Chip Enable (NOR) CEF Chip Enable (NAND) CSU R/BR Chip Enable (NOR) CER2 DNU Chip Enable (UtRAM) D A5 A18 ALE N.C , 0E0000H-0E7FFFH BA27 0 0 1 1 0 1 1 X X X 64/32 1B0000H-1BFFFFH
Samsung Electronics
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KBB0XA300M BA108 transistor ba31 SAMSUNG NOR Flash Qualification Report Transistor BA21 BGA22 A300M

SAMSUNG MCP

Abstract: ba7810 single 3.0V power supply is a Multi Chip Package Memory which combines 64Mbit NOR Flash, 128Mbit NAND Flash and 32Mbit Unit Transistor CMOS RAM. 64Mbit NOR Flash memory is organized as 8M x8 or 4M x16 bit , ,UtRAM) CER Chip Enable (NOR) CEF Chip Enable (NAND) CSU Chip Enable (UtRAM) C A6 , BA27 0 0 1 1 0 1 1 X X X 64/32 1B0000H-1BFFFFH 0D8000H-0DFFFFH , BA27 0 0 1 0 1 0 0 X X X 64/32 140000H-14FFFFH 0A0000H-0A7FFFH
Samsung Electronics
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ba7810 samsung toggle mode NAND BA340 D100M

samsung date code decorder

Abstract: SAMSUNG MCP Multi Chip Package Memory which combines two 64Mbit Four Bank Flash and 32Mbit UtRAM and 8Mbit SRAM , UtRAM is fabricated by SAMSUNG' advanced s CMOS technology using one transistor memory cell. The , Memory) Deep Power Down (UtRAM) Chip Enable1 (Flash Memory) Chip Enable2 (Flash Memory) Chip Select1 (SRAM) Chip Select2 (SRAM) Chip Enable (UtRAM) Write Enable (Common) Output Enable (Common) No , E8000H-EFFFFH BA28 32 Kwords E0000H-E7FFFH BA27 32 Kwords D8000H-DFFFFH BA26 32 Kwords
Samsung Electronics
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samsung date code decorder MITSUBISHI SR-40 BA127 Diode nand sdram mcp samsung NAND memory KBA0101A0M KBA0201A0M KBA0301A0M KBA0401A0M LIM-011025 TNAL0101

ba05 regulator

Abstract: transistor code ak31 engineers and managers who are evaluating the RC79301 StreamSlice Platform ASIC for possible use in a chip , 2.1 Transistor Fabric 2.2 Configurable I/Os 2.3 GigaBlaze SERDES Transceivers 2.4 HyperPHY , of metal layers that implements a customer's unique system on a chip. The StreamSlice platform ASIC , Transistor Fabric. The I/O ring is made up of configurable and dedicated I/Os to satisfy specific , SRAM, and six PLLs. The cores are not configurable. 2.1 Transistor Fabric The Transistor Fabric
LSI Logic
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ba05 regulator transistor code ak31 RC7301 AU04 3M ba05 hp invent j04 DB08-000235-00

48LC2M32B2

Abstract: smd transistor j31c 3-5 Chip Selects and Memory Mapping . , 4-3 MPC885ADS Chip Select Assignment , onboard and initializes the chip selects accordingly. The SDRAM and FLASH memory respond to all types of , . Therefore, the below initializations are liable to change throughout the testing period. 3.4.2 Chip , controller to provide chip selects for the various devices on the board. The ADS uses the following chip
Motorola
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48LC2M32B2 smd transistor j31c 16b2 zener diode zener 15B2 J32C motorola ZENER 15B1 MPC885ADSUG

transistor A1624

Abstract: ba21 transistor K5N1229ACD-BQ12 datasheet Rev. 1.0 MCP Memory 2. General Description The K5N1229ACD is a Multi Chip , transistor memory cell. The device supports the traditional SRAM like asynchronous operation (asynchronous , Input(NOR only) Chip Enable Write Enable Hardware Reset Accelerates Programming Pin Function(UtRAM2) Lower Byte Enable, Upper Byte Enable Control Register Enable Chip Enable RDYr /WAITc VCCrc VCCQrc , set of device is compatible with standard Flash devices. The device uses Chip Enable (CE), Write
Samsung Electronics
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transistor A1624 ba21 transistor BA339 Samsung K5 128MB flash BA252 TBA 1205

ba508

Abstract: BA311 GENERAL DESCRIPTION The K5L5628JT(B)M is a Multi Chip Package Memory which combines 256Mbit Synchronous , transistor memory cell. The device supports the traditional SRAM like asynchronous bus operation , to DQ15 Data Input/Output Balls (Common) ADVu Address Input Valid (UtRAM) CEf Chip Enable (Flash Memory) MRS Mode Register Set (UtRAM) CSu Chip Select (UtRAM) LB Lower , 0E0000h-0E7FFFh BA27 32 Kwords 0D8000h-0DFFFFh BA26 0D0000h-0D7FFFh 32 Kwords 0C8000h-0CFFFFh
Samsung Electronics
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ba508 BA311 BA516 BA295 BA379 ba473 115-B

intel g31 chipset motherboard

Abstract: Intel BGA .58 Thermal Diode Parameters Using Transistor Model , clock chip and the appropriate chipset on the platform. The BSEL encoding for BCLK[1:0] is shown in
Intel
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intel g31 chipset motherboard Intel BGA

TRANSISTOR IFW

Abstract: intel g31 chipset motherboard .58 Thermal Diode Parameters Using Transistor Model , clock chip and the appropriate chipset on the platform. The BSEL encoding for BCLK[1:0] is shown in
Intel
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TRANSISTOR IFW intel Penryn intel g41 bpm signal processor transistor BD28 transistor Bb26

Telefunken

Abstract: zener Diode B23 Configuration 4·3 Local Interrupter 4·4 Clock Generator 4·4·1 SPLL Support 4·5 Buffering 4·6 Chip - , the MPC860ADS: 1. DRAM Controller 2. Chip Select generator. 3. UART for terminal or host computer
Motorola
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Telefunken zener Diode B23 DALE SOMC elco 330 u Elco 90 pin connector siemens rs232 connector com RS-232

XQR5VFX130

Abstract: CF1752 VRN Input/Output This pin is for the DCI voltage reference resistor of N transistor (per bank , reference resistor of P transistor (per bank, to be pulled Low with reference resistor). Dedicated , _0 Input/Output CS_B_0 Input In SelectMAP mode, this is the active-low Chip Select signal. D_IN
Xilinx
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UG520 XQR5VFX130 CF1752 XQR5V DIODE BA40 BA5 marking AJ-42

82801IBM

Abstract: diode AH44 .63 Thermal Diode Parameters Using Transistor Model , with the CK505 clock chip are as follows: · Deep Sleep entry: the system clock chip may stop/tristate , Deep Sleep exit: the system clock chip must drive BCLK to differential DC levels within 2-3 ns of DPSLP , processor input clock (BCLK[1:0]). These signals should be connected to the clock chip and the appropriate
Intel
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82801IBM diode AH44 82801ibm ich9m T3500 Socket 478 VID pinout intel mvp-6

WPCE773LA0DG

Abstract: G5285T11U-GP AL31 AN31 AR29 AR27 AR31 AU29 AU27 AW29 AW27 AU31 AW31 BA29 BA27 BC29 BC27 BA31 BC31 C21 C23 C25 E25 , Spacing use 10 / 20 mil 1 R170 2 H_RCOMP 24D9R2F-L-GP HOST C Place them near to the chip ( < 0.5 , BG27 BE27 BC27 BA27 AY27 AW26 BF24 BL19 BB16 VCC_GFXCORE VCC_SM VCC_SM VCC_SM VCC_SM VCC_SM VCC_SM
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ICS9LPRS365B TPS51125 WPCE773LA0DG G5285T11U-GP g31 crb WPCE773LA intel g41 crb 4CQ01 EMC2103 RT8202 1D05V
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