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BA27 chip transistor

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Abstract: )M, Byte/Word Mode - UtRAM : 2,097,152 x 16 bit · Two Chip Enable (Flash) - Two CE balls control , The KADxx0300B featuring single 3.0V power supply is a Multi Chip Package Memory which combines two , advanced CMOS technology using one transistor memory cell. The device supports deep power down mode for , N.C A16 CEF1 DQ13 DQ15 BYTEF /A-1 Flash Chip Enable 1 (Flash Memory) Flash Chip Enable 2 (Flash Memory) CSU D.N.U Word/Byte selection (Flash Memory) CEF2 E BYTEF Chip Enable Samsung Electronics
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BA100 diode BA115 BA116 SAMSUNG MCP BA961 ba841 0300B 10MAX
Abstract: x 10.4 mm, 0.8 mm pitch The K5T6432YT(B)M featuring single 3.0V power supply is a Multi Chip , . The 32Mbit UtRAM is fabricated by SAMSUNG' advanced s CMOS technology using one transistor memory , Vss DQ14 Lower Byte Enable (UtRAM) F-CE F-Vcc Chip Enable (Flash Memory) ZZ K , Y-Gate / Sense Amp. A2 A1 A0 Status/ ID Register Multi Plexer Chip Enable F-CE Output Enable , E8000H-EFFFFH BA28 32 Kwords E0000H-E7FFFH BA27 32 Kwords D8000H-DFFFFH BA26 32 Kwords Samsung Electronics
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transistor sr61 BA107 transistor BA29 BA106 BA99 ba30 transistor 08MAX
Abstract: . 3-1 ANIC Chip Set in the Central Office Terminal (CO T). 3-1 , 9-5 9-6 9-7 9-8 9-9 9-10 9-11 Page Block Diagram of the ANIC Chip S e t , .3-1 Functional Block Diagram of the PSB 4450/4451 Chip S et.4-1 Voice P a th , chip set to interface analog voice signals to digital terminals such as DSL transceivers. Its , Intefface l PSB 4450 (ANIC-A) GPIO Block Diagram of the ANIC Chip Set Note: The Block Diagram -
OCR Scan
Abstract: Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 ANIC Chip Set , 39 Figure 40 Figure 41 Figure 42 Data Sheet Page Block Diagram of the ANIC Chip Set . . . . , . . . . . . . . 20 Functional Block Diagram of the PSB 4450/PSB 4451 Chip Set . . . . . 21 Voice , PSB 4450 / PSB 4451 ANIC Overview Preliminary 1 Overview ANIC is a chip set to interface , (ANIC-A) GPIO GPIO Figure 1 Block Diagram of the ANIC Chip Set Note: The block diagram is Infineon Technologies
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PEB22521 AR20 BA22 BA23 k3210 z73 trigger transformer D-81541
Abstract: KBB0xB400M featuring single 3.0V power supply is a Multi - Standby Mode/Auto Sleep Mode : 10uA Chip Package , outermost boot blocks at VIL, 256Mbit NAND Flash and 64Mbit Unit Transistor CMOS RAM. 64Mbit NOR Flash , CMOS tech- Block Erase Time : 2ms(Typ.) nology using one transistor memory cell. The device supports , (NOR,UtRAM) ZZ Deep Power Down (UtRAM) CER1 Chip Enable (NOR) UB Upper Byte Enable (UtRAM) CER2 Chip Enable (NOR) LB Lower Byte Enable (UtRAM) CEN Chip Enable (NAND Samsung Electronics
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KBB0xB400M ECH information BA102 samsung NAND memory BGA180 BGA-60 B400M
Abstract: . . . . . . . . . . . . . . . . . . . 19 ANIC Chip Set in the Central Office Terminal (COT) . . . . , 39 Figure 40 Figure 41 Figure 42 Data Sheet Page Block Diagram of the ANIC Chip Set . . . . , . . . . . . . . 19 Functional Block Diagram of the PSB 4450/PSB 4451 Chip Set . . . . . 20 Voice , Overview ANIC is a chip set to interface analog voice signals to digital terminals such as DSL , ANIC Chip Set Note: The block diagram is described in more detail in the section "Functional Infineon Technologies
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fr53 LX41 FR52 ic ntp- 3000 Z31 SMD Innovative Processing AG
Abstract: pitch GENERAL DESCRIPTION The KBB0xA500M featuring single 3.0V power supply is a Multi Chip Package Memory which combines two 64Mbit NOR Flash, 128Mbit NAND Flash and 64Mbit Unit Transistor CMOS RAM , RESET R/BF Chip Enable (NOR) Chip Enable (NAND) CSU A12 Chip Enable (NOR) CER2 CEF R/BR CER1 Chip Enable (UtRAM) D A5 A18 ALE N.C VccU WE A9 A13 E , BA27 0 0 1 1 0 1 1 X X X 64/32 1B0000H-1BFFFFH 0D8000H-0DFFFFH Samsung Electronics
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KBB05A500 transistor ba47 samsung NAND FLASH BGA Pre-programming nand samsung NAND FLASH BGA BGA-100 A500M
Abstract: supply is a Multi Chip Package Memory which combines two 64Mbit NOR Flash, 128Mbit NAND Flash and 32Mbit Unit Transistor CMOS RAM. 64Mbit NOR Flash memory is organized as 8M x8 or 4M x16 bit, 128Mbit , CLE N.C VccF RESET R/BF A12 Chip Enable (NOR) CEF Chip Enable (NAND) CSU R/BR Chip Enable (NOR) CER2 DNU Chip Enable (UtRAM) D A5 A18 ALE N.C , 0E0000H-0E7FFFH BA27 0 0 1 1 0 1 1 X X X 64/32 1B0000H-1BFFFFH Samsung Electronics
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KBB0XA300M BA108 SAMSUNG NOR Flash Qualification Report t402 TF BGA36 Transistor BA21 A300M
Abstract: single 3.0V power supply is a Multi Chip Package Memory which combines 64Mbit NOR Flash, 128Mbit NAND Flash and 32Mbit Unit Transistor CMOS RAM. 64Mbit NOR Flash memory is organized as 8M x8 or 4M x16 bit , ,UtRAM) CER Chip Enable (NOR) CEF Chip Enable (NAND) CSU Chip Enable (UtRAM) C A6 , BA27 0 0 1 1 0 1 1 X X X 64/32 1B0000H-1BFFFFH 0D8000H-0DFFFFH , BA27 0 0 1 0 1 0 0 X X X 64/32 140000H-14FFFFH 0A0000H-0A7FFFH Samsung Electronics
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ba7810 samsung toggle mode NAND BA340 BA5101 UtRAM Density D100M
Abstract: Multi Chip Package Memory which combines two 64Mbit Four Bank Flash and 32Mbit UtRAM and 8Mbit SRAM , UtRAM is fabricated by SAMSUNG' advanced s CMOS technology using one transistor memory cell. The , Memory) Deep Power Down (UtRAM) Chip Enable1 (Flash Memory) Chip Enable2 (Flash Memory) Chip Select1 (SRAM) Chip Select2 (SRAM) Chip Enable (UtRAM) Write Enable (Common) Output Enable (Common) No , E8000H-EFFFFH BA28 32 Kwords E0000H-E7FFFH BA27 32 Kwords D8000H-DFFFFH BA26 32 Kwords Samsung Electronics
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samsung date code decorder nand sdram mcp MITSUBISHI SR-40 BA127 Diode KBA0101A0M KBA0201A0M KBA0301A0M KBA0401A0M LIM-011025 TNAL0101
Abstract: engineers and managers who are evaluating the RC79301 StreamSlice Platform ASIC for possible use in a chip , 2.1 Transistor Fabric 2.2 Configurable I/Os 2.3 GigaBlaze SERDES Transceivers 2.4 HyperPHY , of metal layers that implements a customer's unique system on a chip. The StreamSlice platform ASIC , Transistor Fabric. The I/O ring is made up of configurable and dedicated I/Os to satisfy specific , SRAM, and six PLLs. The cores are not configurable. 2.1 Transistor Fabric The Transistor Fabric LSI Logic
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ba05 regulator transistor code ak31 AU04 3M RC7301 2003 8 PIN transistor ba09 DB08-000235-00
Abstract: 3-5 Chip Selects and Memory Mapping . , 4-3 MPC885ADS Chip Select Assignment , onboard and initializes the chip selects accordingly. The SDRAM and FLASH memory respond to all types of , . Therefore, the below initializations are liable to change throughout the testing period. 3.4.2 Chip , controller to provide chip selects for the various devices on the board. The ADS uses the following chip Motorola
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48LC2M32B2 smd transistor j31c 16b2 zener diode zener 15B2 J32C motorola ZENER 15B1 MPC885ADSUG
Abstract: K5N1229ACD-BQ12 datasheet Rev. 1.0 MCP Memory 2. General Description The K5N1229ACD is a Multi Chip , transistor memory cell. The device supports the traditional SRAM like asynchronous operation (asynchronous , Input(NOR only) Chip Enable Write Enable Hardware Reset Accelerates Programming Pin Function(UtRAM2) Lower Byte Enable, Upper Byte Enable Control Register Enable Chip Enable RDYr /WAITc VCCrc VCCQrc , set of device is compatible with standard Flash devices. The device uses Chip Enable (CE), Write Samsung Electronics
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transistor A1624 ba21 transistor TBA 1205 samsung, K5N Samsung K5 128MB flash K5n12
Abstract: GENERAL DESCRIPTION The K5L5628JT(B)M is a Multi Chip Package Memory which combines 256Mbit Synchronous , transistor memory cell. The device supports the traditional SRAM like asynchronous bus operation , to DQ15 Data Input/Output Balls (Common) ADVu Address Input Valid (UtRAM) CEf Chip Enable (Flash Memory) MRS Mode Register Set (UtRAM) CSu Chip Select (UtRAM) LB Lower , 0E0000h-0E7FFFh BA27 32 Kwords 0D8000h-0DFFFFh BA26 0D0000h-0D7FFFh 32 Kwords 0C8000h-0CFFFFh Samsung Electronics
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ba508 BA516 BA311 ba473 BA512 BA339 115-B
Abstract: .58 Thermal Diode Parameters Using Transistor Model , clock chip and the appropriate chipset on the platform. The BSEL encoding for BCLK[1:0] is shown in Intel
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Intel BGA intel g31 chipset motherboard
Abstract: .58 Thermal Diode Parameters Using Transistor Model , clock chip and the appropriate chipset on the platform. The BSEL encoding for BCLK[1:0] is shown in Intel
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TRANSISTOR IFW transistor BD28 transistor Bb26 intel Penryn intel g41 bpm signal processor
Abstract: Configuration 4·3 Local Interrupter 4·4 Clock Generator 4·4·1 SPLL Support 4·5 Buffering 4·6 Chip - , the MPC860ADS: 1. DRAM Controller 2. Chip Select generator. 3. UART for terminal or host computer Motorola
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Telefunken zener Diode B23 siemens rs232 connector com PLUG 41612 elco Elco 90 pin connector elco 330 u RS-232
Abstract: VRN Input/Output This pin is for the DCI voltage reference resistor of N transistor (per bank , reference resistor of P transistor (per bank, to be pulled Low with reference resistor). Dedicated , _0 Input/Output CS_B_0 Input In SelectMAP mode, this is the active-low Chip Select signal. D_IN Xilinx
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UG520 XQR5VFX130 CF1752 XQR5V DIODE BA40 BA5 marking diode Aa42
Abstract: .63 Thermal Diode Parameters Using Transistor Model , with the CK505 clock chip are as follows: · Deep Sleep entry: the system clock chip may stop/tristate , Deep Sleep exit: the system clock chip must drive BCLK to differential DC levels within 2-3 ns of DPSLP , processor input clock (BCLK[1:0]). These signals should be connected to the clock chip and the appropriate Intel
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82801IBM diode AH44 82801ibm ich9m intel mvp-6 Socket 478 VID pinout T3500
Abstract: AL31 AN31 AR29 AR27 AR31 AU29 AU27 AW29 AW27 AU31 AW31 BA29 BA27 BC29 BC27 BA31 BC31 C21 C23 C25 E25 , Spacing use 10 / 20 mil 1 R170 2 H_RCOMP 24D9R2F-L-GP HOST C Place them near to the chip ( < 0.5 , BG27 BE27 BC27 BA27 AY27 AW26 BF24 BL19 BB16 VCC_GFXCORE VCC_SM VCC_SM VCC_SM VCC_SM VCC_SM VCC_SM -
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ICS9LPRS365B TPS51125 WPCE773LA0DG G5285T11U-GP g31 crb WPCE773LA intel g41 crb 4CQ01 EMC2103 RT8202 1D05V
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