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BA276704 Methode Electronics - 4,455 (Sep 2016) Master Electronics Buy
BA276704 Methode Electronics - 4,455 (Sep 2016) Onlinecomponentscom Buy
BA277 NXP Semiconductors - 2,923 (Sep 2016) America II Electronics Buy
BA277,115 NXP Semiconductors DIODE, BAND-SWITCHING, SOD523 from £0.0358 (Aug 2016) Farnell element14 Buy
BA277,115 NXP Semiconductors PIN Diodes TAPE-7 DIO-RFSS (Aug 2016) Mouser Electronics Buy
BA277,115 NXP Semiconductors RF / Pin Diode, Switching, 0.7 ohm, SOD-523, 2 ;RoHS Compliant: Yes (Aug 2016) Newark element14 Buy
BA277,115 NXP Semiconductors - 928 from $0.21 (Aug 2016) Quest Components Buy
BA277,135 NXP Semiconductors Diode PIN Switch 35V 2-Pin SOD-523 T/R - Tape and Reel (Alt: BA277,135) (Aug 2016) Avnet Buy
BA277,135 NXP Semiconductors Diodes - General Purpose, Power, Switching Switching Diodes 1.2pF 715mW from $0.0510 (Aug 2016) Mouser Electronics Buy
BA277,335 NXP Semiconductors Diode PIN Switch 35V 2-Pin SOD-523 T/R - Tape and Reel (Alt: BA277,335) (Aug 2016) Avnet Buy
BA277,335 NXP Semiconductors Diodes - General Purpose, Power, Switching Switching Diodes 1.2pF 715mW (Aug 2016) Mouser Electronics Buy
BA277115 NXP Semiconductors Diode PIN Switch 35V 2-Pin SOD-523 T/R - Tape and Reel (Alt: BA277,115) (Aug 2016) Avnet Buy
BA277115 NXP Semiconductors N/A 9,399 from $0.06 (Sep 2016) Rochester Electronics Buy
BA277335 NXP Semiconductors N/A 20,000 from $0.06 (Aug 2016) Rochester Electronics Buy
BA278,115 NXP Semiconductors Diode PIN Switch 35V 2-Pin SOD-523 T/R - Tape and Reel (Alt: BA278,115) (Sep 2016) Avnet Buy
BA278,115 NXP Semiconductors Diodes - General Purpose, Power, Switching Switching Diodes 1.2pF 715mW (Sep 2016) Mouser Electronics Buy
BA278115 NXP Semiconductors N/A 9,000 from $0.04 (Sep 2016) Rochester Electronics Buy

BA27 chip transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: )M, Byte/Word Mode - UtRAM : 2,097,152 x 16 bit · Two Chip Enable (Flash) - Two CE balls control , The KADxx0300B featuring single 3.0V power supply is a Multi Chip Package Memory which combines two , advanced CMOS technology using one transistor memory cell. The device supports deep power down mode for , N.C A16 CEF1 DQ13 DQ15 BYTEF /A-1 Flash Chip Enable 1 (Flash Memory) Flash Chip Enable 2 (Flash Memory) CSU D.N.U Word/Byte selection (Flash Memory) CEF2 E BYTEF Chip Enable ... Samsung Electronics
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datasheet

51 pages,
943.2 Kb

UtRAM Density BA114 BA108 BA102 BA99 transistor ba31 BA124 BA127 ba7 transistor BA133 diode SAMSUNG MCP BA116 BA115 BA100 diode TEXT
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Abstract: x 10.4 mm, 0.8 mm pitch The K5T6432YT K5T6432YT(B)M featuring single 3.0V power supply is a Multi Chip , . The 32Mbit UtRAM is fabricated by SAMSUNG' advanced s CMOS technology using one transistor memory , Vss DQ14 Lower Byte Enable (UtRAM) F-CE F-Vcc Chip Enable (Flash Memory) ZZ K , Y-Gate / Sense Amp. A2 A1 A0 Status/ ID Register Multi Plexer Chip Enable F-CE Output Enable , E8000H-EFFFFH E8000H-EFFFFH BA28 32 Kwords E0000H-E7FFFH E0000H-E7FFFH BA27 32 Kwords D8000H-DFFFFH D8000H-DFFFFH BA26 32 Kwords ... Samsung Electronics
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datasheet

40 pages,
595.87 Kb

BA133 ba125 BA124 diode ba102 BA109 BA74 Transistor BA21 samsung ba89 ba38 transistor BA-51 ba113 A21-A7 SAMSUNG MCP ba30 transistor BA99 K5T6432YT BA106 K5T6432YT BA27 chip transistor K5T6432YT transistor BA29 K5T6432YT BA107 K5T6432YT transistor sr61 K5T6432YT K5T6432YT K5T6432YT TEXT
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Abstract: . 3-1 ANIC Chip Set in the Central Office Terminal (CO T). 3-1 , 9-5 9-6 9-7 9-8 9-9 9-10 9-11 Page Block Diagram of the ANIC Chip S e t , .3-1 Functional Block Diagram of the PSB 4450/4451 Chip S et.4-1 Voice P a th , chip set to interface analog voice signals to digital terminals such as DSL transceivers. Its , Intefface l PSB 4450 (ANIC-A) GPIO Block Diagram of the ANIC Chip Set Note: The Block Diagram ... OCR Scan
datasheet

124 pages,
1415.48 Kb

TEXT
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Abstract: Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 ANIC Chip Set , 39 Figure 40 Figure 41 Figure 42 Data Sheet Page Block Diagram of the ANIC Chip Set . . . . , . . . . . . . . 20 Functional Block Diagram of the PSB 4450/PSB 4450/PSB 4451 Chip Set . . . . . 21 Voice , PSB 4450 / PSB 4451 ANIC Overview Preliminary 1 Overview ANIC is a chip set to interface , (ANIC-A) GPIO GPIO Figure 1 Block Diagram of the ANIC Chip Set Note: The block diagram is ... Infineon Technologies
Original
datasheet

131 pages,
1774.87 Kb

z73 trigger transformer BA23 BA22 AR20 PEB22521 TEXT
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Abstract: KBB0xB400M featuring single 3.0V power supply is a Multi - Standby Mode/Auto Sleep Mode : 10uA Chip Package , outermost boot blocks at VIL, 256Mbit NAND Flash and 64Mbit Unit Transistor CMOS RAM. 64Mbit NOR Flash , CMOS tech- Block Erase Time : 2ms(Typ.) nology using one transistor memory cell. The device supports , (NOR,UtRAM) ZZ Deep Power Down (UtRAM) CER1 Chip Enable (NOR) UB Upper Byte Enable (UtRAM) CER2 Chip Enable (NOR) LB Lower Byte Enable (UtRAM) CEN Chip Enable (NAND ... Samsung Electronics
Original
datasheet

82 pages,
1464.86 Kb

UtRAM Density BA116 BA127 ba30 transistor samsung NAND memory BA102 ECH information KBB0xB400M SAMSUNG MCP TEXT
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Abstract: . . . . . . . . . . . . . . . . . . . 19 ANIC Chip Set in the Central Office Terminal (COT) . . . . , 39 Figure 40 Figure 41 Figure 42 Data Sheet Page Block Diagram of the ANIC Chip Set . . . . , . . . . . . . . 19 Functional Block Diagram of the PSB 4450/PSB 4450/PSB 4451 Chip Set . . . . . 20 Voice , Overview ANIC is a chip set to interface analog voice signals to digital terminals such as DSL , ANIC Chip Set Note: The block diagram is described in more detail in the section "Functional ... Infineon Technologies
Original
datasheet

132 pages,
1559.26 Kb

P-TSSOP-38-1 P-TSSOP-28-1 PEB22521 BA23 Innovative Processing AG PSB 4450 datasheet LX41 FR52 fr53 TEXT
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Abstract: pitch GENERAL DESCRIPTION The KBB0xA500M featuring single 3.0V power supply is a Multi Chip Package Memory which combines two 64Mbit NOR Flash, 128Mbit NAND Flash and 64Mbit Unit Transistor CMOS RAM , RESET R/BF Chip Enable (NOR) Chip Enable (NAND) CSU A12 Chip Enable (NOR) CER2 CEF R/BR CER1 Chip Enable (UtRAM) D A5 A18 ALE N.C VccU WE A9 A13 E , BA27 0 0 1 1 0 1 1 X X X 64/32 1B0000H-1BFFFFH 1B0000H-1BFFFFH 0D8000H-0DFFFFH 0D8000H-0DFFFFH ... Samsung Electronics
Original
datasheet

71 pages,
1314.29 Kb

UtRAM Density ba38 transistor ba43 NAND FLASH BGA Pre-programming nand samsung samsung NAND FLASH BGA transistor BA29 transistor ba47 BA102 KBB05A500 SAMSUNG MCP TEXT
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Abstract: supply is a Multi Chip Package Memory which combines two 64Mbit NOR Flash, 128Mbit NAND Flash and 32Mbit Unit Transistor CMOS RAM. 64Mbit NOR Flash memory is organized as 8M x8 or 4M x16 bit, 128Mbit , CLE N.C VccF RESET R/BF A12 Chip Enable (NOR) CEF Chip Enable (NAND) CSU R/BR Chip Enable (NOR) CER2 DNU Chip Enable (UtRAM) D A5 A18 ALE N.C , 0E0000H-0E7FFFH 0E0000H-0E7FFFH BA27 0 0 1 1 0 1 1 X X X 64/32 1B0000H-1BFFFFH 1B0000H-1BFFFFH ... Samsung Electronics
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datasheet

71 pages,
1317.31 Kb

BA114 BA99 KBB06A300 BA102 NAND FLASH BGA BA107 transistor ba31 transistor BA29 Transistor BA21 t402 SAMSUNG NOR Flash Qualification Report samsung NAND FLASH BGA BA108 SAMSUNG MCP transistor ba47 KBB0XA300M TEXT
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Abstract: single 3.0V power supply is a Multi Chip Package Memory which combines 64Mbit NOR Flash, 128Mbit NAND Flash and 32Mbit Unit Transistor CMOS RAM. 64Mbit NOR Flash memory is organized as 8M x8 or 4M x16 bit , ,UtRAM) CER Chip Enable (NOR) CEF Chip Enable (NAND) CSU Chip Enable (UtRAM) C A6 , BA27 0 0 1 1 0 1 1 X X X 64/32 1B0000H-1BFFFFH 1B0000H-1BFFFFH 0D8000H-0DFFFFH 0D8000H-0DFFFFH , BA27 0 0 1 0 1 0 0 X X X 64/32 140000H-14FFFFH 140000H-14FFFFH 0A0000H-0A7FFFH 0A0000H-0A7FFFH ... Samsung Electronics
Original
datasheet

72 pages,
1357.3 Kb

UtRAM Density NAND FLASH BGA BA102 samsung toggle mode NAND SAMSUNG MCP TEXT
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Abstract: Multi Chip Package Memory which combines two 64Mbit Four Bank Flash and 32Mbit UtRAM and 8Mbit SRAM , UtRAM is fabricated by SAMSUNG' advanced s CMOS technology using one transistor memory cell. The , Memory) Deep Power Down (UtRAM) Chip Enable1 (Flash Memory) Chip Enable2 (Flash Memory) Chip Select1 (SRAM) Chip Select2 (SRAM) Chip Enable (UtRAM) Write Enable (Common) Output Enable (Common) No , E8000H-EFFFFH E8000H-EFFFFH BA28 32 Kwords E0000H-E7FFFH E0000H-E7FFFH BA27 32 Kwords D8000H-DFFFFH D8000H-DFFFFH BA26 32 Kwords ... Samsung Electronics
Original
datasheet

48 pages,
1025.31 Kb

nand sdram mcp BA127 Diode MITSUBISHI SR-40 BA102 UtRAM Density samsung NAND memory transistor BA29 transistor sr61 SAMSUNG MCP samsung date code decorder KBA0101A0M KBA0201A0M KBA0301A0M KBA0401A0M TEXT
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