NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: FAIRCHILD SEMICONDUCTOR FÄIRCHIL.P i A Schlumberger Company „ ~fl4 M|3Mbclt,74 OOE?aaS fl CP/ BA217/BA218 BA217/BA218 General Purpose Diodes • WIV., 10 V to 100 V • »rr • -4nt (MAX) BA216-218 ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature ; Power Dissipation (Note 2) Maximum Total Power Dissipation at 25°C Ambient Linear Power Derating Factor (from 25°C) PACKAGES BA217 BA217 BA218 BA218 DO-35 DO-35 DO-35 DO-35 -65°C to +200°C + 175°C +260° C ... | OCR Scan |
1 pages, |
BA217 BA21B BA218 BA216-218 BA216 BA217/BA218 BA217/BA218 abstract |
| Abstract: do7-15 15 1.0 10 - - DO-35 DO-35 9 BA216 10 1500 10 1.0 15 - - DO-35 DO-35 MILITARY QUALIFIED SMALL SIGNAL DIODES ... | OCR Scan |
1 pages, |
1N458JAN 1N459JAN 1N461A BA130 BA217 BA218 1N457JAN 1S44 BA164 BA216 DO-35 BA218 abstract |
| Abstract: BA216 10 1500 10 1.0 15 - - DO-35 DO-35 MILITARY QUALIFIED SMALL SIGNAL DIODES (NUMERIC LISTING) GLASS ... | OCR Scan |
2 pages, |
FDH999 1N459 1N459A 1N485B 1N486B 1N625 FDH300 FDH666 1N4009 BA216 fdh900 DO-35 1N44S0 FDH666 abstract |
| Abstract: 5.0 - do-35 7 BA130 BA130 30 100 25 1.0 10 2.0 - do-35 8 BA164 BA164 20 2000 15 1.0 10 - - do-35 9 BA216 ... | OCR Scan |
2 pages, |
1N4151 1N4152 1N4153 1N4154 1N4305 1N4376 1N5282 BA216 BAY71 BAY82 FD700 FD777 fdh900 FD700 abstract |
| Abstract: TC58FVM7 TC58FVM7(T/B)5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS Lead-Free 128M (8M Ã- 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION The TC58FVM7T5/B5B TC58FVM7T5/B5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as 8388608 Ã- 16 bits. The TC58FVM7T5/B5B TC58FVM7T5/B5B features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are ... | Original |
87 pages, |
TC58FVM7T5B TC58FVM7B5BTG-65 TC58FVM7T5BXG65 TC58FVM7T TC58FVM7T5BTG BA138 diode TC58FVM7T5BTG-65 P-TFBGA80-0810-0 TOSHIBA TC58 TC58FVM7B5B TC58FVM7T5BTG65 TC58FVM7B5BTG65 TC58FVM7 TC58FVM7 TC58FVM7 abstract |
| Abstract: BA216 32 Kwords 6C0000h-6C7FFFh BA215 BA215 32 Kwords 6B8000h-6BFFFFh BA214 BA214 32 Kwords , 6A0000h-6A7FFFh BA218 BA218 32 Kwords 698000h-69FFFFh BA217 BA217 32 Kwords 690000h-697FFFh BA216 Bank ... | Original |
47 pages, |
ba234 diode diode ba189 datasheet BA244 ba258 BA247 BA234 BA136 BA260 BA257 BA102 BA169 BA188 BA249 BA242 K8A2815ET K8A2815ET abstract |
| Abstract: K8F56 K8F56(57)15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For ... | Original |
59 pages, |
samsung nor flash 15ET BA167 BA184 K8F56 K8F5615ETM 06SEC K8F56 abstract |
| Abstract: K8C10 K8C10(11)15ET(B)M NOR FLASH MEMORY 512Mb M-die MLC NOR Specification K8C10 K8C10(11)INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. ... | Original |
68 pages, |
"NOR Flash" 512MB BA343 ba328 BA318 BA306 ba406 BA459 BA341 BA389 PIN Diode K8C10 K8C10 abstract |
| Abstract: K8F12 K8F12(13)15ET(B)M NOR FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For ... | Original |
68 pages, |
samsung nor flash K8F12 K8F1215EBM 15ET BA479 BA274 BA306 BA318 BA509 BA333 ba473 BA379 ba508 BA340 BA343 K8F12 abstract |
| Abstract: K8S2815ET K8S2815ET(B)C NOR FLASH MEMORY 128Mb C-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For upd ... | Original |
60 pages, |
samsung nor flash ba148 K8S2815ET K8S2815ET abstract |
| Abstract: FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Dioden DDR/international DDR- Vergleichs- Beschreibung DDR- Vergleichs- Beschreibung Typ typ Typ typ GA 100 AA 131 Ge-Universaltyp 20 V SY 320/0,75 BY 188/196 Si-Gleichrichterdioden GA 101 AA 119 Ge-Universaltyp 40 V SY 320/1 BYX 36/1 kleiner Leistung 950 mA GA 102 AA 134 Ge-Universaltyp 60 V SY 320/2 BY 197/201/2 im KunststofTgehäuse GA 104 AA 117/118 Ge-Universaltyp 110 V BYX 36/2 mit Drahtanschlüssen GA 105 AA 130 Ge-Gleichrichte ... | OCR Scan |
1 pages, |
Funkamateur BA 345 byx 21 sy 351 say 30 Dioden SY 250 SY 345 sy 710 sy 360 SY 360 05 sy 170 SY 356 datasheet abstract |
| Abstract: TN-47-16 TN-47-16: DDR2 DDR2 DDR2 256M 4G 4 8 DDR2 4 DDR2 8 DDR2 ( ) 1 3 2 DRAM ( ) 1 I/O 2(n) n = /8 = 2(n) x n = 11 (A0A9, A11) x4 (DQ0 ... | Original |
9 pages, |
TN47 47-16 l7 DDR2 DDR2-400 DDR2-533 DDR2-667 DDR2-800 Micron 4g TN-47-08 DDR2 DIMM JEDEC 256MX16 TN-47-16 TN-47-16 abstract |
| Abstract: Internet Data Sheet, Rev. 1.3, May 2006 HYB18T1G400AF HYB18T1G400AF(L) HYB18T1G800AF HYB18T1G800AF(L) HYB18T1G160AF HYB18T1G160AF 1-Gbit DDR2 SDRAM DDR2 SDRAM RoHS Compliant Memory Products Edition 2006-05 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and right ... | Original |
49 pages, |
power -22d resistor 33 Ohm DATA SHEET Infineon Technologies address logic diagram and symbol of DRAM distributed control system DATA SHEET digital clock diagram ddr2-667 switch mode power supply DDR2 SDRAM with SSTL_18 interface infineon DDR data sheet 741 HYB18T1G400AF HYB18T1G800AF HYB18T1G400AF abstract |
| Abstract: September 2006 HYB18TC512160BF HYB18TC512160BF HYB18TC512800BF HYB18TC512800BF 512-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.11 Internet Data Sheet HYB18TC512 HYB18TC512[16/80]0BF 512-Mbit Double-Data-Rate-Two SDRAM HYB18TC512160BF HYB18TC512160BF, HYB18TC512800BF HYB18TC512800BF Revision History: 2006-09, Rev. 1.11 Page Subjects (major changes since last revision) All Qimonda update All Adapted internet edition 39 Modified AC Timing Parameters Previous Revision: 2006- ... | Original |
61 pages, |
HYB18TC512160BF-3 HYB18TC512160BF HYB18TC512 HYB18TC512800BF HYB18TC512160BF abstract |
| Abstract: January 2007 HYB18T512400BF HYB18T512400BF HYB18T512800BF HYB18T512800BF HYB18T512160BF HYB18T512160BF 512-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet R ev . 1 . 05 Internet Data Sheet HYB18T512xxxBFÂ[2.5.5] 512-Mbit Double-Data-Rate-Two SDRAM HYB18T512400BF HYB18T512400BF, HYB18T512800BF HYB18T512800BF Revision History: 2007-01, Rev. 1.05 Page Subjects (major changes since last revision) All Qimonda update All Adapted internet edition Previous Version: 2005-11, Rev. 1.04 32 add ... | Original |
57 pages, |
hyb18t512800bf3s DDR400 HYB18T512400BF HYB18T512400BF-3 HYB18T512400BF-3S HYB18T512400BF-5 HYB18T512800BF HYB18T512800BF-2.5 400B HYB18T512160BF-3.7 HYB18T512160BF HYB18T512400BF abstract |
| Abstract: July 2007 HYB18T HYB18T C1G 80 0 BF HYB18T HYB18T C1G 16 0 BF 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.21 Internet Data Sheet HYB18TC1G HYB18TC1G[80/16]0BF 1-Gbit Double-Data-Rate-Two SDRAM HYB18TC1G800BF HYB18TC1G800BF, HYB18TC1G160BF HYB18TC1G160BF Revision History: 2007-07, Rev. 1.21 Page Subjects (major changes since last revision) All Adapted internet edition 14 Corrected Table 9: Added Ball B2 and B8 Previous Revision: 2007-03, Rev. 1.2 136 ... | Original |
65 pages, |
HYB18TC1G800BF 800E HYB18T HYB18T abstract |
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| www.datasheetarchive.com/download/56288934-920955ZC/snom332.zip (lmh7324.lib) |
Texas Instruments | 03/07/2012 | 39.93 Kb | ZIP | snom332.zip |
| ba30ba216c91f5cc6cd2ec www.datasheetarchive.com/download/73087984-918310ZC/slim192.zip (TPS622310_TRANS.lib) |
Texas Instruments | 06/08/2011 | 48.31 Kb | ZIP | slim192.zip |
| > 216e77fa3ac292809dc884f2e0e7a67bcab0fc www.datasheetarchive.com/download/50658631-919707ZC/slum233.zip (tps51219.lib) |
Texas Instruments | 13/10/2011 | 76.78 Kb | ZIP | slum233.zip |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| NTE Electronics Part | Industry Part |
| Part | Similar Part | Notes |
| BA216 Buy | 1N4148 Buy | |
| BA216 Buy | BA217..219 Buy | |
| BA216 Buy | BA315..317 Buy |