NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| BA138 | N/A | Shortform Data and Cross References (Misc Datasheets) |
1 pages, |
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| BA138 | N/A | Semiconductor Devices, Diode, and SCR Datasheet Catalog |
1 pages, |
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| BA138 | Thomson-CSF | Condensed Data Book 1977 |
1 pages, |
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| BA138 | N/A | Shortform Semicon, Diode, and SCR Datasheets |
1 pages, |
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| BA138 | N/A | Diode, Transistor, Thyristor Datasheets and more |
1 pages, |
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| BA138 | N/A | Diode, Transistor, Thyristor Datasheets and more |
1 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: TC58FVM7 TC58FVM7(T/B)5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS Lead-Free 128M (8M Ã- 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION The TC58FVM7T5/B5B TC58FVM7T5/B5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as 8388608 Ã- 16 bits. The TC58FVM7T5/B5B TC58FVM7T5/B5B features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are ... | Original |
87 pages, |
TC58FVM7T5BTG TC58FVM7T5BXG65 TC58FVM7T TC58FVM7T5B BA138 diode TC58FVM7T5BTG-65 P-TFBGA80-0810-0 TOSHIBA TC58 TC58FVM7B5B TC58FVM7T5BTG65 TC58FVM7B5BTG65 TC58FVM7 TC58FVM7 abstract |
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| Abstract: Kwords 458000h-45FFFFh BA138 32 Kwords 450000h-457FFFh BA137 BA137 32 Kwords , 420000h-427FFFh BA138 32 Kwords 418000h-41FFFFh BA137 BA137 32 Kwords 410000h-417FFFh Bank 10 ... | Original |
47 pages, |
ba234 diode diode ba189 datasheet BA244 ba258 BA247 BA234 BA136 BA260 BA257 BA102 BA169 BA188 BA249 BA242 K8A2815ET K8A2815ET abstract |
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| Abstract: K8F56 K8F56(57)15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For ... | Original |
59 pages, |
samsung nor flash 15ET BA167 BA184 K8F56 K8F5615ETM 06SEC K8F56 abstract |
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| Abstract: K8C10 K8C10(11)15ET(B)M NOR FLASH MEMORY 512Mb M-die MLC NOR Specification K8C10 K8C10(11)INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. ... | Original |
68 pages, |
BA505 ba491 8 BA471 BA306 BA318 ba328 BA343 ba406 BA459 BA341 BA389 PIN Diode K8C10 K8C10 abstract |
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| Abstract: K8F12 K8F12(13)15ET(B)M NOR FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For ... | Original |
68 pages, |
samsung nor flash K8F12 K8F1215EBM 15ET BA479 BA274 BA306 BA318 BA509 BA333 ba473 BA379 ba508 BA340 BA343 K8F12 abstract |
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| Abstract: K8S2815ET K8S2815ET(B)C NOR FLASH MEMORY 128Mb C-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For upd ... | Original |
60 pages, |
samsung nor flash ba148 K8S2815ET K8S2815ET abstract |
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| Abstract: Kwords 458000h-45FFFFh BA138 32 Kwords 450000h-457FFFh BA137 BA137 Bank 5 Block BA174 BA174 , 420000h-427FFFh BA138 32 Kwords 418000h-41FFFFh BA137 BA137 32 Kwords 410000h-417FFFh Bank 10 ... | Original |
72 pages, |
SAMSUNG MCP MCP MEMORY BA262 BA259 BA167 ba148 BA238 BA204 datasheet abstract |
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| Abstract: TC58FVM7 TC58FVM7(T/B)2AFT(65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT 128-MBIT (16M Ã- 8 BITS/8M Ã- 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 Ã- 8 bits or as 8388608 Ã- 16 bits. The TC58FVM7T2A/B2A TC58FVM7T2A/B2A features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Pro ... | Original |
69 pages, |
diode ba189 datasheet diode BA170 TC58FVM7T2AFT65 TC58FVM7B2A BA140 diode ba148 BA122 ba60 BA226 diode BA230 Diode BA168 BA244 ba139 BA138 TC58FVM7 128-MBIT TC58FVM7 abstract |
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| Abstract: TC58FVM7 TC58FVM7(T/B)2AFT(65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT 128-MBIT (16M Ã- 8 BITS / 8M Ã- 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words Ã- 8 bits or as 8388608 words Ã- 16 bits. The TC58FVM7T2A/B2A TC58FVM7T2A/B2A features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC sta ... | Original |
68 pages, |
TC58FVM7T2ATG65 TC58FVM7T2AFT65 TC58FVM7T2A TC58FVM7B2A TC58 ef80 BA169 BA167 TC58FVM7B2ATG65 TC58FVM7 128-MBIT TC58FVM7T2A/B2A TC58FVM7 abstract |
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| Abstract: Advanced Information K8F12 K8F12(13)15ET(B)M Flash Memory 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ... | Original |
72 pages, |
samsung nor flash BA176 BA308 BA311 BA379 15ET BA459 BA505 BA513 BA514 BA318 BA343 BA402 K8F12 BA471 K8F12 abstract |
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| Abstract: T8S648-4xxx 16M X 8 Bits x 4 Banks SDR SDRAM IC Tower FEATURES GENERAL DESCRIPTION · · The SiliconTech T8S648-4xxx is a 16M x 8 bits x 4 banks Single Data Rate (SDR) Synchronous Dynamic RAM (SDRAM) IC Tower. The IC Tower consists of two 3.3V CMOS 16M x 4 bits x 4 banks SDRAMs in 54-pin 400-mil TSOP-II packages mounted in stacks of two via two stack PCBs. · · · · · Burst Mode Operation Auto and self refresh capability (8192 cycles/64ms refresh) LVTTL compatible in ... | Original |
2 pages, |
sdr sdram ic 8 pin with number 1 is vss SiliconTech SDR SDRAM CHIP 16M X 32 SDR SDRAM datasheet abstract |
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| Abstract: DO 7 (CB 26) CB 14 CB 12 TO 92 (CB 97) Variable capacitance diodes ( continued ) Diodes à capacité variable ( suite } Tamb25°C Type Casa VR 'F IR VR C / Vr CIV^/C^). V, / V2 DRS 75 Boîtier (V) 1mA) InA) (V) IpF) / IV) min / (V) / (V) page max max max min max / BA102 BA102 (1) DO 7 20 100 5000 20(5) 24 37 4 1,4 4 10 323 BA 111 DO 7 20 100 10 45 65 2 1,5 2 10 327 BA 125 - 35 DO 7 20 100 50 20 29 36 2 2,1 2 20 # â- BA 138 (2) DO 7 30 100 100 30 3,8 5,9 3 2,4 3 30 331 B A 149 A D ... | OCR Scan |
1 pages, |
BA 30 C BB 205 BB100 diode ba 204 diode ba102 BA102 BA102 diode datasheet abstract |
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| Abstract: T4S1288-4xxxx 32M X 4 Bits x 4 Banks (512Mb) SDR SDRAM IC Tower FEATURES GENERAL DESCRIPTION · · The SiliconTech T4S32M4-4xxxx is a 32M x 4 bits x 4 banks Single Data Rate (SDR) Synchronous Dynamic RAM (SDRAM) IC Tower. The IC Tower consists of two 3.3V CMOS 16M x 4 bits x 4 banks SDRAMs in 54-pin 400-mil TSOP-II packages mounted in stacks of two via two stack PCBs. · · · · · · Burst Mode Operation Auto and self refresh capability (8192 cycles/64ms refresh) LVTT ... | Original |
2 pages, |
SDR SDRAM CHIP 512MB SDR SDRAM CHIP datasheet abstract |
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| Abstract: b4E D m 2bl4130 0007^2 S3b PALLAS SEMICONDUCTOR CORP DALLAS SEMICONDUCTOR IDAL DS5001FP DS5001FP DS5001FP DS5001FP 128K Soft Micro Chip FEATURES • 8051 compatible uC adapts to its task - Accesses up to 128K bytes of nonvolatile S RAM - In-system programming via on-chip serial port - Can modify its own program or data memory - Accesses memory on a separate Byte-wide bus - Performs CRC-16 CRC-16 check of NVRAM memory - Decodes memory and peripheral chip enables • Crashproof Operation - Maintains all nonvolatile resources ... | OCR Scan |
23 pages, |
DS5001FP DS5001FP abstract |
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| Abstract: b4E D m 2bl4130 0007^2 S3b PALLAS SEMICONDUCTOR CORP DALLAS SEMICONDUCTOR IDAL DS5001FP DS5001FP DS5001FP DS5001FP 128K Soft Micro Chip FEATURES • 8051 compatible uC adapts to its task - Accesses up to 128K bytes of nonvolatile S RAM - In-system programming via on-chip serial port - Can modify its own program or data memory - Accesses memory on a separate Byte-wide bus - Performs CRC-16 CRC-16 check of NVRAM memory - Decodes memory and peripheral chip enables • Crashproof Operation - Maintains all nonvol ... | OCR Scan |
23 pages, |
FP 801 DS5002FP DS5001FP CRC-16 BD7 274 ba1s DS5001FP abstract |
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| Abstract: K8P2915UQB K8P2915UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates o ... | Original |
54 pages, |
samsung nor flash 555H K8P2915UQB K8P2915UQB abstract |
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| Abstract: Rev 0; 3/08 Secure Microprocessor Chip Features The DS5003 DS5003 secure microprocessor incorporates sophisticated security features including an array of mechanisms that are designed to resist all levels of threat, including observation, analysis, and physical attack. As a result, a massive effort is required to obtain any information about its memory contents. Furthermore, the "soft" nature of the DS5003 DS5003 allows frequent modification of the secure information, thereby minimizing the valu ... | Original |
24 pages, |
DS5003FPM-16 DS5003 DS5002FP 8052 microcontroller Intel DS5003 abstract |
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| Abstract: Rev 0; 3/08 Secure Microprocessor Chip Features The DS5003 DS5003 secure microprocessor incorporates sophisticated security features including an array of mechanisms that are designed to resist all levels of threat, including observation, analysis, and physical attack. As a result, a massive effort is required to obtain any information about its memory contents. Furthermore, the "soft" nature of the DS5003 DS5003 allows frequent modification of the secure information, thereby minimizing the valu ... | Original |
24 pages, |
DS5003FPM-16 DS5003 DS5002FP ba7 transistor 8052 microcontroller Intel DS5003 abstract |
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| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| BA138 | N/A | Varactor Diode | |
| NTE Electronics Part | Industry Part |
| Part | Similar Part | Notes |