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ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
ISL58315CRTZ-T13 Intersil Corporation High Speed Triple Laser Diode Drivers; TQFN40; Temp Range: 0° to 70° visit Intersil Buy
ISL58315CRTZ Intersil Corporation High Speed Triple Laser Diode Drivers; TQFN40; Temp Range: 0° to 70° visit Intersil Buy

BA114 diode

Catalog Datasheet MFG & Type PDF Document Tags

BA114 diode

Abstract: BA114 BA114 SILICON ALLOYED JUNCTION DIODE Silicon alloyed junction diode in subminiature all-glass DO-7 envelope intended for use as low voltage stabilizer. MECHANICAL DATA DO-7 not tinned 2max "TL 25 4min u 2max 7.6° | [] 25.4" The coloured band indicates the cathode side RATINGS (Limiting values) Current Forward current (d.c.) Temperatures Storage temperature Operating ambient , according to the Absolute Maximum System as defined in IEC publication 134. March 1968 BA114
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BA114 diode DIODE BA114

sx3704

Abstract: BRC157 S ilicon Diodt BA151 BA147 BA114 1S44 D3 AF25 ME0404/2 GP Germanium Diodi NPN D river 300mW . Base A8A21 D3 I D4 . Base D Zener Diode AF26 , D10 S ilicon D iode Varicap Diode 9 Double S ilicon Diode Varicap Diode , Germanium Diode S ilicon Diode D15 S ilicon Diode V D12 S ilicon Diode Germanium Diode , D iode S6M1 10D2 1N2070 TV6 10 D16 D24 D20 S ilicon Diode / BY127 BY238
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sx3704 BRC157 Germanium Diode aa143 BRC-116 1n4148 ITT TRANSISTOR BC147 VT701 R2540 VT702 1N4005 BZX83-C30 BZX79-C30

NKT677

Abstract: OC171 equivalent â'" AC165 AC154 AC157 AA120 Complementary output Bias compensating diode Complementary , Limiting Resis­ tance VCE(sat)max SO Diode Temperature Coefficient VEB Emitter to Base , polarity. Do connect the replacement transistor or diode the right way round firs t time. Do ensure that , GERMANIUM JUNCTION DIODE Bias Stabiliser* Red or Brown Sleeve Line on sleeve adjacent to anode lead , Class B output stage bias stabilising circuits. This diode should always be used in the forward
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AD149 NKT677 OC171 equivalent NKT612 ac128 GEX34 AC113 AC155 AC156 AC128 AC166 AC167

FD6666 diode

Abstract: diode BY100 DIODE AND RECTI FJER EQUIVALENTS AND SUBSTITUTES A2K4/5 A2K9 A4/10 A5/2-4 A5/5 A5/6 A5/62 A5/105 A23 A100 A300 A400 A500 A600 A800 A1000 AA50 AA100 AA110 AA111 AA112 AA113 AA114 AA115 AA116 â'¢ AA117 AA118 AA119 AA120 AA121 AA123 AA130 AA131 AA132 AA133 AA134 AA135 AA136 AA137 AA138 BY 127 BY127 AA118 , BA114 BA115 BA116 BA117 BA119 BA 120 BA121 BA122 BA124 BA125 BA 126 BA 127 BA 128 BA 129 BA130 BA131 , -142-149-161, BB100-102-105G. BB107-113. BA114-117-127-147-170-180, BAX13, BAY61, FDH999, 1N914-4446/7/8/9, 1S184. BA
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FD6666 diode diode BY100 1N4Q07 BY164 diode aa119 1N82 BAY63 1N4002 1N4004 1N4006 1N4007 1N4001

BA100 diode

Abstract: BA102 DIODE AND RECT1FJER EQUIVALENTS AND SUBSTITUTES A2K4/5 A2K9 A4/10 A5/2-4 A5/5 A5/6 A5/62 A5/105 A23 A100 A300 A400 A500 A600 A800 A1000 AA50 AA100 AA110 AA111 AA112 AA113 AA114 AA115 AA116 AA117 AA118 AA119 AA120 AA121 AA123 AA130 AA131 AA132 AA133 AA134 AA135 AA136 AA137 AA138 BY 127 x BY127 r ' , -102-110-119, BB100-103, MV833/4, 1S48/9. ; BA110 BA110G BA111 | BA112 * BA114 BA115 BA116 BA117 BA119 BA 120 BA121 , , BYX10, 1N4007. BA139-141, BB105A/B. BA138-142-149-161, BB100-102-105G. BB107-113. BA114
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BA100 diode BA102 B2M1-5 PH1021 DIODE AA116 OA210 diode BAV63 OA70-79-172 RL41G AA111-116-119-121-123-143 OA70-90 OA81-90-174

NIKKO NR 9600

Abstract: Triac bt 808 600cw  SEMiCON INDEX O' i i< I § VOLUME 2 INTERNATIONAL DIODE and THYRISTOR INDEX 17th Edition , DICKSON ELECTRONICS CORPORATION* DIX ABB-IXYS SEMICONDUCTOR GmbH IXY DIODE TRANSISTOR I NC. DIT ABB , Division AEI CMI, INC.* GENERAL DIODE CORP. GED COLLMER SEMICONDUCTOR INC. COL GE / GENERAL ELECTRIC , INTERNATIONAL COMPONENTS CORPORATION INC INTERNATIONAL DIODE CORPORATION IND INTERNATIONAL RECTIFIER CORP. IRG , POWER SEMICONDUCTORS OPT OPTO DIODE CORP. OPD OPTRON, INC.' OSHINO LAMPS LTD. OSH OXLEY
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NIKKO NR 9600 Triac bt 808 600cw BT135 SEMICON INDEXES varicap serie kv diode SR360 BL

hep 154 silicon diode

Abstract: zy 406 transistor -3.6V 1W Zener Diode -6.2V 1W Zener Diodeâ'" 9.1V JW Zener Diodeâ'"I 2V 1W Ge Diode (1N34A Substitute) (ire Diode (1N60 Substitute) Si Power Reetifier-Studâ'" 50PIV l5Amp Si Power Reetifier-Stud , -200PIV 3Amp Si Dual Diode Common Cathode Si Dual Diode-Common Anode Si Rectifierâ'" Axial L e a d - , Si Unijunction Transistor 300mW Si Bilateral Trigger Diode Si Photo Transistor Thyristor (SC R , Case) Silicon Press-Fit Rectifier (Anode to Case) 4.7 Volt Zener Diode ] Watt 5.6 Volt Zener Diode 1
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hep 154 silicon diode zy 406 transistor hep R1751 triac zd 607 motorola HEP 801 hep 154 diode ZU62B ZU110 ZU110A ZV12B ZV27B ZV33B

st178

Abstract: diode E1110 Figure 21 Selenium dual diode common cathode TV horizontal AFCâ'"Replaces D4, DO-4, DDO-4, etc. ECG114 Figure 21 Selenium dual diode series connected TV horizontal AFCâ'"Replaces D5, DO-5, DDO-5, etc. ECG115 Figure 21 Selenium dual diode common anode TV horizontal AFCâ'"Replaces D6, DO , 1000 volt P.R.V. 3.0 amp *Diode and Rectifier Outlinesâ'"Page 9 7 ECG SEMICONDUCTOR REPLACEMENT , 110.0 2.3 450.0 7.2 Figure 27 ECG SEMICONDUCTOR REPLACEMENT GUIDE diode and rectifier
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st178 diode E1110 CK705 TE1088 ME1120 CS1237 ECG303 8M-26102 66X0003-001 68X0003-001 CX-9000 T-E0317

k2645

Abstract: k4005 Diode Connections Transistor Base Diagrams ' Diode and R e c tifie r Connections Integrated Circuit , Grid-anode capacitance Grid-cathode capacitance Centre tap Distortion Double beam tetrode Double diode Double , . resistance Cathode bias resistance Optimum load resistance Single diode Secondary emission Special quality Triode Trip le diode Triode heptode Triode hexode Triode pentode Tetrode Voltage doubler Variable mu , ), (DD) and (T ) for single or double diode and triode, respectively. Replacement: No longer
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k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 MK135 MK136 MK137 MK138 MK139 MK140

3TE445

Abstract: 6ej7 S35 A TSC Description Diode -160 PIV Rectifier - 200 PIV Rectifier - 450 PIV PRECEDING MANUFACTURER , '" Available to MIL spec. , diode 2 â'" Base turn off UNDER USE Section 11 1 â'" UHF mixer 2 â'" Photodiode (Si & Ge devices) 3 â'" Photoconductive cell 4 â'" Solar cell 5 â'" Backward diode 6 7 8 M FOLLOWING VF - , are shown below: ) N-Type Forward (b) S-Type Forward (c) Conventional Diode Characteristic
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3TE445 6ej7 2N3303 GEX36/7 ECC88 B9D TRANSISTOR H101/A SL621C 2300E/830 111/A SL630 CD2301/961

Germanium Diode aa116

Abstract: 20680 JRC customer satisfaction can be obtained by replacing weak or defective selenium or diode vacuum tubes with
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Germanium Diode aa116 20680 JRC Germanium itt 1N21 itt zx15 MD1010

triac zd 607

Abstract: motorola c6004 BCY21 8CY22 SCY23 A5W IRTR-51 R210 5A6D TR-26 BA104 BA105 BA 108 BA114 BA119 D200
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motorola c6004 2SC 968 NPN Transistor sje 607 transistor c828 bf197 HEP F2004 ZY12A Z0215 ZT280 ZT2369 ZT2369A ZY12B

Tr431

Abstract: 18DB6A a highly stable sili­ con diode for use in switching, computer, logic, and other high-speed , VARIABLE CAPACITANCE DIODE (Fig. 2) More and more, voltage variable capacitance diodes are being specified
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Tr431 18DB6A 1N1525 B1274 transistor cs1256hg BSF17 25T12 Z1012 Z1014 Z1018 AA140 AA142