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BA111 Datasheet

Part Manufacturer Description PDF Type Ordering
BA111 N/A Shortform Semicon, Diode, and SCR Datasheets
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1 pages,
116.61 Kb

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BA111 N/A Diode, Transistor, Thyristor Datasheets and more
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1 pages,
44.95 Kb

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BA111 N/A Diode, Transistor, Thyristor Datasheets and more
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1 pages,
57.56 Kb

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BA111 Philips Components Philips Data Book Scan
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1 pages,
42.16 Kb

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BA111 N/A Shortform Data and Cross References (Misc Datasheets)
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1 pages,
26.28 Kb

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BA111 N/A Semiconductor Devices, Diode, and SCR Datasheet Catalog
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1 pages,
62.54 Kb

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BA111 ITT Semiconductors Semiconductor Summary 1969
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1 pages,
37.71 Kb

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BA111 Telefunken Electronic Electronic Component Data Book 1976
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1 pages,
33.3 Kb

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BA111 Telefunken Electronic Diodes 1977
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3 pages,
53.87 Kb

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BA111 Thomson-CSF Condensed Data Book 1977
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1 pages,
32.89 Kb

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BA111

Catalog Datasheet Results Type PDF Document Tags
Abstract: -50. + 150 °C B 2/V.l. 17/0474 55 BA111 Kenngrößen Characteristics Min. Typ. Max. tj = 25 °C ... OCR Scan
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3 pages,
53.87 Kb

TUNER ba capacitance diode Ba 111 TFK U 111 B 741532 BA111 datasheet abstract
datasheet frame
Abstract: Dioden Capacitance diodes Type Group Fig. Maximum ratings Characteristics Nr. VR CD(£/R = 3V) CD(i/R = 3V) CDat rs at tfR V CD(t/R = 25 V) CD (t/R = 30 V) PF V O V BA111 10 20 - - 45-65 2 0.5 2 BA121 BA121 10 30 - - 8-12 2 0.9 2 BA 124 50 10 30 - - 44-51 2 0.5 2 55 10 30 - - 49-56 2 0.5 2 60 10 30 - - 54-61 2 0.5 2 65 10 30 - - 59-66 2 0.5 2 BA 125 35 10 30 - - 29-36 2 0.5 2 40 10 30 - - 34-41 2 0.5 2 45 10 30 - - 39-46 2 0.5 2 50 10 30 - - 46-51 2 0.5 2 BB 104 gn 12 30 ... OCR Scan
datasheet

1 pages,
33.3 Kb

Din 5461 BA121 bl 565 BB205 g BA111 BB205 BB105 BB209 BB205 abstract
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Abstract: H L * * * 6E0000H 6E0000H~6EFFFFH 370000H 370000H~377FFFH 377FFFH BA111 H H L H H H , H * * * 670000H 670000H~67FFFFH 67FFFFH 338000H 338000H~33FFFFH 33FFFFH BA111 H H L H L L L , Kwords 8 BA104 BA104~BA111 64 Kbytes 32 Kwords BK13 512 Kbytes 256 Kwords 8 BA112 BA112 , 8 BA111~BA118 BA118 64 Kbytes 32 Kwords BK14 512 Kbytes 256 Kwords 8 BA119 BA119~BA126 BA126 ... Original
datasheet

55 pages,
571.3 Kb

TH50VSF4683AASB BA102 BA110 A12F BK11 diode ba102 diode ba127 TH50VSF4682AASB BK16 ba112 BA111 BA118 BA127 TH50VSF4682/4683AASB TH50VSF4682/4683AASB abstract
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Abstract: ~6EFFFFH 370000H 370000H~377FFFH 377FFFH BA111 H H L H H H H * * * 6F0000H 6F0000H~6FFFFFH , 338000H 338000H~33FFFFH 33FFFFH BA111 H H L H L L L * * * 680000H 680000H~68FFFFH 68FFFFH 340000H 340000H , BA96~BA103 BA103 64 Kbytes 32 Kwords BK12 512 Kbytes 256 Kwords 8 BA104 BA104~BA111 64 , Kbytes 32 Kwords BK13 512 Kbytes 256 Kwords 8 BA111~BA118 BA118 64 Kbytes 32 Kwords ... Original
datasheet

55 pages,
569.49 Kb

TH50VSF3683AASB BA115 ba119 BA127 A12F BA95 TH50VSF3682AASB Ba91 diode ba110 BA111 BA102 equivalent BA102 BA127 Diode diode ba103 diode ba102 TH50VSF3682/3683AASB TH50VSF3682/3683AASB TH50VSF3682/3683AASB abstract
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Abstract: H H L * * * 6E0000H 6E0000H~6EFFFFH 370000H 370000H~377FFFH 377FFFH BA111 H H L H H , 338000H 338000H~33FFFFH 33FFFFH BA111 H H L H L L L * * * 680000H 680000H~68FFFFH 68FFFFH 340000H 340000H , BA96~BA103 BA103 64 Kbytes 32 Kwords BK12 512 Kbytes 256 Kwords 8 BA104 BA104~BA111 64 , Kbytes 32 Kwords BK13 512 Kbytes 256 Kwords 8 BA111~BA118 BA118 64 Kbytes 32 Kwords ... Original
datasheet

55 pages,
477.95 Kb

TH50VSF3681AASB BA96 ba95 BA72 BA111 BA110 A12F TH50VSF3680AASB TH50VSF3680/3681AASB TH50VSF3680/3681AASB abstract
datasheet frame
Abstract: TC58FVT641/B641FT-10 TC58FVT641/B641FT-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 64-MBIT (8M - 8 BITS / 4M - 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words - 8 bits or as 4,194,304 words - 16 bits. The TC58FVT641/B641 TC58FVT641/B641 features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on th ... Original
datasheet

51 pages,
591.27 Kb

TC58FVB641FT BA127 Diode BA102 B641 BA127 diode ba102 TC58FVT641/B641FT-10 64-MBIT TC58FVT641/B641 TC58FVT641/B641FT-10 abstract
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Abstract: TC58FVT641/B641FT/XB-70 TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 64-MBIT (8M - 8 BITS / 4M - 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words - 8 bits or as 4,194,304 words - 16 bits. The TC58FVT641/B641 TC58FVT641/B641 features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDE ... Original
datasheet

53 pages,
588.96 Kb

diode ba102 BA111 B641 PTFBGA-63 P-TFBGA63-0911-0 TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 TC58FVT641/B641FT/XB-70 abstract
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Abstract: ~6EFFFFH 370000H 370000H~377FFFH 377FFFH BA111 H H L H H H H * * * 6F0000H 6F0000H~6FFFFFH , BA110 BA110 H H L L H H H * * * 670000H 670000H~67FFFFH 67FFFFH 338000H 338000H~33FFFFH 33FFFFH BA111 , BA96~BA103 BA103 64 Kbytes 32 Kwords BK12 512 Kbytes 256 Kwords 8 BA104 BA104~BA111 64 , Kbytes 32 Kwords BK13 512 Kbytes 256 Kwords 8 BA111~BA118 BA118 64 Kbytes 32 Kwords ... Original
datasheet

55 pages,
573.72 Kb

TH50VSF3681AASB TH50VSF3680AASB diode ba103 diode ba102 BA96 BA41 A12F BA102 TH50VSF3680/3681AASB TH50VSF3680/3681AASB abstract
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Abstract: BK12 BA100 BA100 BA101 BA101 BA102 BA102 BA103 BA103 BA104 BA104 BA105 BA105 BA106 BA106 BA107 BA107 BK13 BA108 BA108 BA109 BA109 BA110 BA110 BA111 BA112 BA112 BA113 BA113 BA114 BA114 , BA98 BK12 BA99 BA100 BA100 BA101 BA101 BA102 BA102 BA103 BA103 BA104 BA104 BA105 BA105 BA106 BA106 BK13 BA107 BA107 BA108 BA108 BA109 BA109 BA110 BA110 BA111 BA112 BA112 BA113 BA113 , ~BA47 BA48~BA55 BA56~BA63 BA64~BA71 BA72~BA79 BA80~BA87 BA88~BA95 BA96~BA103 BA103 BA104 BA104~BA111 BA112 BA112~BA119 BA119 , BA95~BA102 BA102 BA103 BA103~BA110 BA110 BA111~BA118 BA118 BA119 BA119~BA126 BA126 BA127 BA127~BA134 BA134 BLOCK SIZE BYTE MODE 8 Kbytes 64 Kbytes 64 ... Original
datasheet

55 pages,
573.02 Kb

BA102 BA101 TH50VSF3680/3681AASB TH50VSF3680/3681AASB abstract
datasheet frame
Abstract: TC58FVT641/B641FT/XB-70 TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 64-MBIT (8M - 8 BITS / 4M - 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words - 8 bits or as 4,194,304 words - 16 bits. The TC58FVT641/B641 TC58FVT641/B641 features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC st ... Original
datasheet

53 pages,
573.77 Kb

TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 TC58FVT641/B641FT/XB-70 abstract
datasheet frame
Abstract: ba111 7403 Quad 2 Input O.C. NAND Vcc 40 4A 4V 3B 3A 3V ninininininiriif 1A IB IV 2A 2B 2Y GND O740lmAit,*l«|oli h tloluiifi) O7400a U 7 y 7' Vcc 74LS03 74LS03 74S03 74S03 JIB x-n IN ayj OUT H LS ALS ALSK F S AS AC ACT HC HCU HCT BC BCT WÌ tpd max L-H r as 32 54 33 20 7.5 24 30 ns tpd max H- ... OCR Scan
datasheet

1 pages,
23.29 Kb

df 085 74S03 74LS03 7403 datasheet abstract
datasheet frame
Abstract: Kenneth Beswick Pagi? HIGH BREAKING CAPACITY QUICK ACTING F TYPE REFERENC; 20 x 5 mm S 501 532 $i+S -fe 533-^lU-o Construction Specification Marking 10 0 mm ± 2 0 (0394 m ± 0-079) I 20 0 mm ± 0-5 ... OCR Scan
datasheet

1 pages,
72.8 Kb

BA11 IEC-127 IEC127 BS4265 datasheet abstract
datasheet frame
Abstract: DO 7 (CB 26) CB 14 CB 12 TO 92 (CB 97) Variable capacitance diodes ( continued ) Diodes à capacité variable ( suite } Tamb25°C Type Casa VR 'F IR VR C / Vr CIV^/C^). V, / V2 DRS 75 Boîtier (V) 1mA) InA) (V) IpF) / IV) min / (V) / (V) page max max max min max / BA102 BA102 (1) DO 7 20 100 5000 20(5) 24 37 4 1,4 4 10 323 BA 111 DO 7 20 100 10 45 65 2 1,5 2 10 327 BA 125 - 35 DO 7 20 100 50 20 29 36 2 2,1 2 20 # - BA 138 (2) DO 7 30 100 100 30 3,8 5,9 3 2,4 3 30 331 B A 149 A D ... OCR Scan
datasheet

1 pages,
32.88 Kb

BA 30 C BB 205 BB 113 BB 104 ba capacitance diode BB100 diode ba 204 diode ba102 BA102 BA102 diode datasheet abstract
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Abstract: BRIGHT LED ELECTRONICS 3SE D - DO DOG 2 e! H - T-VhS/ LE D DIS P L A Y . - - - i -. .- i- - - " . . BAR GRAPH & ARRAY Digit Size Part No. Emitted Color Peak Wave Length Xp (nm) Absolute Maximum Ratings Electro-Optical Data (At 10 mA) Drawing No. Common Anode Common Cathode • AX (nm) Pd (mw) If(mA) Peak lf(mA) m Iv Typ. Per Seg. (med) Typ. Max. 6.5X 12,9mm-LIGHT BAR BA-10 BA-10 R1UD - ' 665 40 110 40 200 1.7 2.0 0.7 A-01 BA-10H1UD BA-10H1UD . Bright Red . 700 90 50 15 ... OCR Scan
datasheet

1 pages,
120.22 Kb

DOG 2 BA-10E1UD BA-10G1UD BA-10H1UD BA-10S1UD BA-10Y1UD BA-2G2UW BA 30 C ba10g datasheet abstract
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Abstract: BA142 Silicon Capacitance Diodes Variable Capacitance Silcon Diodes for automatic frequency control Type Characteristics @ Tamb=25°C ® @ @ @ Vp = 2 V V« = 4 V Vp = 10 V VR = 2V Vr = 2V lf = 60 mA VR = 10 V R R R f = 30 MHz f = 30 MHz _C,at pp_Ctot pF Ctot pF rs Q_Q_VFV_lR nA_VimR V BA 110_10(8. 12)_8,3 6,8_1_ 540 _ < 0,95 ^ _< 50 > 30 BA110 BA110 G1 10 .16' - - _1 540_ 20 BA 111 _55 (45 . 65)_45,7 34,7 ... OCR Scan
datasheet

1 pages,
37.71 Kb

S3 marking DIODE BA 142 BB141 Diode BAY 80 Diode BAY 55 Diode BAY 45 BA 30 C BA 141 diode BB142 BA110 diode ba110 datasheet abstract
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Abstract: Package Information Vishay Siliconix 9 0.10 C A D 0.08 C A D/2 1 2 3 0.10 M C A B D2 4 D3 D2/2 P 0.45 Pin 1 ID 0.20 R. N 1 2 3 E4 E2/2 E E1 E2 E/2 6 0.80 DIA E1/2 5 0.10 C B P D6 A3 2x D1/2 N A1 A2 D1 4 b 0.25 min (Ne-1)Xe Ref. A 4 10 2x E3 PowerPAKr MLF 9 2x 0.10 C B B 2x q 0.10 C A C Top View e L Seating Plane D5 0.25 min ... Original
datasheet

2 pages,
58.46 Kb

D4 diode top mark datasheet abstract
datasheet frame
Abstract: PRODUCT DATASHEET Lena series last update 5/7/2012 Ordering number CN12715 CN12715_LENA-S Family Type LED Color Diameter Height Style Optic Material Holder Material Fastening Status Lena Reflector CLL040 CLL040 Metal 111 mm 86.3 mm Round PC PC Screw Ready FWHM Efficiency cd/lm Gerber File 15 degrees 84 % 5.250 Available Ordering number CN12721 CN12721_LENA-S-DL Family Type LED Color Diameter Height Style Optic Material Holder Material Fastening Status Lena Reflector CLL040 CLL040 Metal 111 mm 87.6 mm Round PC PC Screw ... Original
datasheet

10 pages,
784.39 Kb

CLL040 CN12715 CN12721 CN12715 abstract
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Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPXV4006G/D MPXV4006G/D Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated The MPXV4006G MPXV4006G series piezoresistive transducer is a state-of-the-art monolithic silicon pressure sensor designed for a wide range of applications, but particularly those employing a microcontroller or microprocessor with A/D inputs. This sensor combines a highly sensitive implanted strain gauge with advanced micromachin ... OCR Scan
datasheet

5 pages,
288.73 Kb

PRESSURE SENSOR 4006G 482A-01 AN1646 analog pressure sensor vacuum MPXV4006G MPXV4006G6T1 MPXV4006G6U MPXV4006GC6T1 MPXV4006GC6U 04BJ MPXV4006G/D MPXV4006G/D abstract
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Shortform Datasheet Search Results

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BA111 N/A Varactor Diode

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