Datasheet Search Results			1 - 5 of about 5 for BA100
	BA100	L-Com	ADAPTOR BNC M/BNC M	129.84 Kb,  1 Pages.
	BA100	N/A	SILICON DIODE	30.23 Kb,  1 Pages.
	BA100	N/A	Shortform Data and Cross References (Misc Datasheets)	26.28 Kb,  1 Pages.
	BA100	N/A	Shortform IC and Component Datasheets (Plus Cross Reference Data)	72.92 Kb,  1 Pages.
	BA100	N/A	Semiconductor Devices, Diode, and SCR Datasheet Catalog	62.54 Kb,  1 Pages.

Fulltext Datasheet Results		1 - 50 of about 57 for BA100
	First line: BA100* ba100 BA100 diode BA100 SILICON DIODE eneral purpose silicon diode subminiature glass DO-7 envelope. MECHANICAL DATA DO-7 tinned Abstract: .. BA100 SILICON DIODE General purpose silicon diode in a subminiature all glass DO-7 envelope. Dimensions in mm MECHANICAL DATA | CM DO-7 S G not tinned 2max TT 25.4rr. 2 max 7.6" T 25.4" J mln. mounting ..  Tags: BA100 diode ba100 BA100*   datasheet abstract..	48.76 Kb	1 Pages	OCR Scan
	First line: BA100 Prcess Capable Level-1 Cntrlled Substances banned ECN(DCN) Abstract: .. ] SHEET: 1 of 2 Origina I: Draw: m � �M Design: fitiS Check: Appro:ggg| 07/10/51 0/1031 -BA100 3.00. [JJ [JJ. o. o n o LOa lOLO LO N y. E E. w. o o o. fl. 0::: f-- Cl. Z. ~ T. 3.00. 4-:T r: ~_ ct-J ~ I I. D. o. I. 2.10. I. 3 2 TERMINAL ..  Tags: BA100   datasheet abstract..	114.63 Kb	1 Pages	OCR Scan
	First line: PHILIPS H.F.TRIODE oscillator mixer P.M./A.M. receivers TRIODE H.P.pour utilisation oscillatrice dans re'cepteurs F.M./A.M. HF-THIODE Verwendung Oszillator oder Heating indirect A.C. D.O.; series supply Chauffage: indirect C.A. C.C.; alimentation Heizung indirekt durch Wechseloder Gleichstrom; Serie Abstract: .. 1-+-+-+H"~'f-+-+H+I+--+-t-+-H-HIC-bA100. L..--- Jk = 0. ~L-~_--. Lt=-"1-"i-L!+ -Ll~: '=:-:1'-I:~ti:1 +-~tl:rI:=.Li 1 -="7-':-~" "~ 1 =:Q--'..1-L-LJ :,-,:1,:-,::" c::-" Il.o-- mb ..  Tags:   datasheet abstract..	468.25 Kb	13 Pages	OCR Scan
	First line: BA100 diode RMB, RMBS Molded Precision Wirewound Resistors Axial Leads Abstract: .. RMBS 0.5 22U 5 % BA100 e1. MODEL STYLE NON. INDUCTIVE WINDING. “Ni” Optional. SPECIAL DESIGN. Method N � Optional. OHMIC VALUE. Custom items are subject to extra-charge and min. order. Please see price ..  Tags: BA100 diode BA100   datasheet abstract..	92.55 Kb	4 Pages	Original
	First line: BA100 diode Precision Surface Mount Resistors Wirewound Metal Film Technologies Abstract: .. ORDERING INFORMATION MSP 1 B 48U7 48U7 � 1 % TC BA100 e3. SERIES STYLE TECHNOLOGY. B: Wirewound C: Metal Film. NON INDUCTIVE WINDING Optional. OHMIC VALUE TOLERANCE Applicable only in “C” technology. PACKAGING ..  Tags: BA100 diode E192  BA100   datasheet abstract..	344.82 Kb	5 Pages	Original
	First line: 40101 BY Precision Metal Film Resistors Abstract: .. AM500 AM500 = A20 AM1000 AM1000 = A22 BA100 = S14 BA500 BA500 = S22. TR5000 TR5000 = R26. 1 0 0 0 2 F A 2 Y 3 N 2. Document Number: 91000 www.vishay.com. Revision: 18-Jul-08 18-Jul-08 1. Disclaimer. Legal Disclaimer Notice Vishay. All product specifications ..  Tags: 40101-001* marking code E192  BA100  40101-001  40101 BY  40101   datasheet abstract..	377.82 Kb	7 Pages	Original
	First line: BA133 diode BA116* ba7 transistor BA100 diode BA116*� KADxx0300B Txxx Multi-Chip Package MEMORY MEMORY Abstract: .. BA100 1 1 0 0 1 0 0 X X X 64/32 640000H-64FFFFH 640000H-64FFFFH 320000H-327FFFH 320000H-327FFFH . BA99 BA99 1 1 0 0 0 1 1 X X X 64/32 630000H-63FFFFH 630000H-63FFFFH 318000H-31FFFFH 318000H-31FFFFH . BA98 BA98 1 1 0 0 0 1 0 X X X 64/32 620000H-62FFFFH 620000H-62FFFFH 310000H-317FFFH 310000H-317FFFH . BA97 BA97 1 1 0 0 0 0 1 X X ..  Tags: BA116*Â BA100 diode ba7 transistor BA116* SAMSUNG MCP  BA99  BA133 diode  BA127  BA123  BA116  BA108*  BA102  ba100   KADxx0300B	943.2 Kb	51 Pages	Original
	First line: BA102 K8D6x16UTM K8D6x16UBM FLASH MEMORY Document Title x8/4M x16) Dual Bank Flash Memory Revision History Revision History Abstract: .. BA100 1 1 0 0 1 0 0 X X X 64/32 640000H-64FFFFH 640000H-64FFFFH 320000H-327FFFH 320000H-327FFFH . BA99 BA99 1 1 0 0 0 1 1 X X X 64/32 630000H-63FFFFH 630000H-63FFFFH 318000H-31FFFFH 318000H-31FFFFH . FLASH MEMORY K8D6x16UTM K8D6x16UTM / K8D6x16UBM K8D6x16UBM . Revision 1.5 March 2005. 6. Table 3. Top ..  Tags: Ba91  BA74  BA133 diode  ba129  ba124  BA116*  BA102*  ba100   datasheet abstract..	635.77 Kb	48 Pages	Original
	First line: K8D6x16UTM K8D6x16UBM FLASH MEMORY Document Title x8/4M x16) Dual Bank Flash Memory Revision History Revision History Abstract: .. BA100 1 1 0 0 1 0 0 X X X 64/32 640000H-64FFFFH 640000H-64FFFFH 320000H-327FFFH 320000H-327FFFH . BA99 BA99 1 1 0 0 0 1 1 X X X 64/32 630000H-63FFFFH 630000H-63FFFFH 318000H-31FFFFH 318000H-31FFFFH . NOR FLASH MEMORY K8D6x16UTM K8D6x16UTM / K8D6x16UBM K8D6x16UBM . Revision 1.6 September, 2006. 6. Table ..  Tags: BA108*  BA102  ba100   datasheet abstract..	744.95 Kb	48 Pages	Original
	First line: SAMSUNG MCP BA125 BA102 BA133 diode BA100 diode K5C6417YT(B)M Multi-Chip Package MEMORY MEMORY Abstract: .. BA100 32 Kwords 320000H-327FFFH 320000H-327FFFH . BA99 BA99 32 Kwords 318000H-31FFFFH 318000H-31FFFFH . BA98 BA98 32 Kwords 310000H-317FFFH 310000H-317FFFH . BA97 BA97 32 Kwords 208000H-20FFFFH 208000H-20FFFFH . BA96 BA96 32 Kwords 300000H-307FFFH 300000H-307FFFH . BA95 BA95 32 Kwords 2F8000H-2FFFFFH 2F8000H-2FFFFFH ..  Tags: BA100 diode BA133 diode BA125 sensing "nor flash memory" "SAMSUNG Electronics"  SAMSUNG MCP  ba112  BA109  BA102  ba100  "NOR Flash" 4MB   K5C6417YT	585.26 Kb	39 Pages	Original
	First line: BA109 diode ba102 BA102 diode BA102 K5T6432YT(B)M Multi-Chip Package MEMORY (4Mx16) Four Bank Flash Memory (2Mx16) UtRAM Abstract: .. BA100 32 Kwords 320000H-327FFFH 320000H-327FFFH . BA99 BA99 32 Kwords 318000H-31FFFFH 318000H-31FFFFH . BA98 BA98 32 Kwords 310000H-317FFFH 310000H-317FFFH . BA97 BA97 32 Kwords 208000H-20FFFFH 208000H-20FFFFH . BA96 BA96 32 Kwords 300000H-307FFFH 300000H-307FFFH . BA95 BA95 32 Kwords 2F8000H-2FFFFFH 2F8000H-2FFFFFH ..  Tags: BA102 diode diode ba102 BA109 sensing "nor flash memory" samsung  sensing "nor flash memory" "SAMSUNG Electronics"  SAMSUNG MCP  ba21 transistor  BA111*  BA108*  BA102  ba100  "NOR Flash" 4MB   K5T6432YT	595.87 Kb	40 Pages	Original
	First line: BA125 Diode BA102 BA100 diode K5C6481NT(B)M Multi-Chip Package MEMORY Advance Information MEMORY Abstract: .. BA100 32 Kwords 320000H-327FFFH 320000H-327FFFH . BA99 BA99 32 Kwords 318000H-31FFFFH 318000H-31FFFFH . BA98 BA98 32 Kwords 310000H-317FFFH 310000H-317FFFH . BA97 BA97 32 Kwords 208000H-20FFFFH 208000H-20FFFFH . BA96 BA96 32 Kwords 300000H-307FFFH 300000H-307FFFH . BA95 BA95 32 Kwords 2F8000H-2FFFFFH 2F8000H-2FFFFFH ..  Tags: BA100 diode BA125 Diode sensing "nor flash memory" "SAMSUNG Electronics"  BA124  ba112  BA111*  ba108  BA102  ba100  "NOR Flash" 4MB   K5C6481NT	586.16 Kb	39 Pages	Original
	First line: TOSHIBA TC58 cmos memory -NAND BA102 TC58FVM6 (T/B) (FT/XB) 64MBIT BITS/4M BITS) CMOS FLASH MEMORY DESCRIPTION TC58FVM6T2A/B2A 67108864-bit, 3.0-V read-only electrically erasable programmable flash memory organized 8388608 bits 4194304 bits. TC58FVM6T2A/B2A features commands Read, Program Erase oper Abstract: .. BA100 H H L L H L L * * * 640000h 640000h ~64FFFFh 64FFFFh 320000h 320000h ~327FFFh 327FFFh . BA101 BA101 H H L L H L H * * * 650000h 650000h ~65FFFFh 65FFFFh 328000h 328000h ~32FFFFh 32FFFFh . BA102 BA102 H H L L H H L * * * 660000h 660000h ~66FFFFh 66FFFFh 330000h 330000h ~337FFFh 337FFFh . BA103 BA103 H H L L H H H * * * 670000h 670000h ~67FFFFh 67FFFFh ..  Tags: TOSHIBA TC58 cmos memory -NAND TC58FV  BA124  ba112  BA102  ba100   TC58FVM6 TC58FVM6T2A B2A	629.32 Kb	62 Pages	Original
	First line: BA127 BA102 diode ba103 BA127 Diode diode ba102 TH50VSF3682/3683AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION TH50VSF3682/3683AASB mixed multi-chip package containing 8,388,608-bit Full CMOS SRAM 67,108,864-bit flash mem Abstract: .. BA100 H H L L H L L * * * 640000H 640000H ~64FFFFH 64FFFFH 320000H 320000H ~327FFFH 327FFFH . BA101 BA101 H H L L H L H * * * 650000H 650000H ~65FFFFH 65FFFFH 328000H 328000H ~32FFFFH 32FFFFH . BA102 BA102 H H L L H H L * * * 660000H 660000H ~66FFFFH 66FFFFH 330000H 330000H ~337FFFH 337FFFH . BK12 BK12 . BA103 BA103 H H L L H H H * * * 670000H 670000H ..  Tags: diode ba102 BA127 Diode diode ba103 BA102 diode ba127  diode ba110  BA95*  ba31  BA134  BA127*  BA126  BA121  Ba120  BA117*  BA116   TH50VSF3682 3683AASB	569.49 Kb	55 Pages	Original
	First line: BA125 Diode BA134* BA134 TC58FVM6T2ATG65 BA102 TC58FVM6T2ATG65/TC58FVM6B2ATG65 64MBIT BITS BITS) CMOS FLASH MEMORY DESCRIPTION TC58FVM6T2A/B2A 67108864-bit, 3.0-V read-only electrically erasable programmable flash memory organized 8388608 words bits 4194304 words bits. TC58FVM6T2A/B2A features comma Abstract: .. BA100 H H L L H L L * * * 640000h 640000h ~64FFFFh 64FFFFh 320000h 320000h ~327FFFh 327FFFh . BA101 BA101 H H L L H L H * * * 650000h 650000h ~65FFFFh 65FFFFh 328000h 328000h ~32FFFFh 32FFFFh . BA102 BA102 H H L L H H L * * * 660000h 660000h ~66FFFFh 66FFFFh 330000h 330000h ~337FFFh 337FFFh . BA103 BA103 H H L L H H H * * * 670000h 670000h ~67FFFFh 67FFFFh ..  Tags: BA134 BA134* BA125 Diode TC58FVM6T2ATG65  TC58FVM6B2ATG65  TC58FV  microprocessors and interfacing programming and h  ba112  BA102  ba100   TC58FVM6T2ATG65 TC58FVM6B2ATG65 TC58FVM6T2A B2A	548.63 Kb	58 Pages	Original
	First line: samsung date code decorder BA127 Diode BA102 KBA0101A0M KBA0201A0M KBA0301A0M KBA0401A0M Multi-Chip Package MEMORY Preliminary MEMORY Abstract: .. BA100 32 Kwords 320000H-327FFFH 320000H-327FFFH . BA99 BA99 32 Kwords 318000H-31FFFFH 318000H-31FFFFH . BA98 BA98 32 Kwords 310000H-317FFFH 310000H-317FFFH . BA97 BA97 32 Kwords 208000H-20FFFFH 208000H-20FFFFH . BA96 BA96 32 Kwords 300000H-307FFFH 300000H-307FFFH . BA95 BA95 32 Kwords 2F8000H-2FFFFFH 2F8000H-2FFFFFH ..  Tags: BA127 Diode samsung date code decorder sensing "nor flash memory" samsung  sensing "nor flash memory" "SAMSUNG Electronics"  SAMSUNG MCP  samsung "nor flash" sensing  MCP MEMORY  KBA0101A0M  CMOS GATE ARRAYs mitsubishi  BA111*  BA102  ba100  "NOR Flash" 4MB   KBA0101A0M KBA0201A0M KBA0301A0M KBA0401A0M	1025.31 Kb	48 Pages	Original
	First line: diode ba102 BA127 Diode BA102 TC58FVT641/B641FT-10 64-MBIT BITS BITS) CMOS FLASH MEMORY DESCRIPTION TC58FVT641/B641 67,108,864-bit, 3.0-V read-only electrically erasable programmable flash memory organized 8,388,608 words bits 4,194,304 words bits. TC58FVT641/B641 features commands Read, Program Era Abstract: .. BA100 H H L L H L L * * * 640000H 640000H ~64FFFFH 64FFFFH 320000H 320000H ~327FFFH 327FFFH . BA101 BA101 H H L L H L H * * * 650000H 650000H ~65FFFFH 65FFFFH 328000H 328000H ~32FFFFH 32FFFFH . BA102 BA102 H H L L H H L * * * 660000H 660000H ~66FFFFH 66FFFFH 330000H 330000H ~337FFFH 337FFFH . BK12 BK12 . BA103 BA103 H H L L H H H * * * 670000H 670000H ..  Tags: BA127 Diode diode ba102 ba79  BA127*  BA126  ba119  Ba118  BA117*  ba116  ba112  BA104  BA102 equivalent  BA102   TC58FVT641 B641FT-10	591.27 Kb	51 Pages	Original
	First line: BA127 Diode BA102 K8A6415ET(B)B FLASH MEMORY 64Mb B-die Specification INFORMATION THIS DOCUMENT PROVIDED RELATION SAMSUNG PRODUCTS, SUBJECT CHANGE WITHOUT NOTICE. NOTHING THIS DOCUMENT SHALL CONSTRUED GRANTING LICENSE, EXPRESS IMPLIED, ESTOPPEL OTHERWISE, INTELLECTUAL PROPERTY RIGHTS SAMSUNG PRODUCT Abstract: .. BA100 32 Kwords 320000h-327FFFh 320000h-327FFFh . BA99 BA99 32 Kwords 318000h-31FFFFh 318000h-31FFFFh . BA98 BA98 32 Kwords 310000h-317FFFh 310000h-317FFFh . BA97 BA97 32 Kwords 308000h-30FFFFh 308000h-30FFFFh . BA96 BA96 32 Kwords 300000h-307FFFh 300000h-307FFFh . Bank4. BA95 BA95 32 Kwords 2F8000h-2FFFFFh 2F8000h-2FFFFFh ..  Tags: BA102 BA127 Diode   K8A6415ET	606.28 Kb	41 Pages	Original
	First line: BA169 BA139 BA138 diode BA138 BA139* K8A2815ET(B)B FLASH MEMORY 128Mb B-die Specification INFORMATION THIS DOCUMENT PROVIDED RELATION SAMSUNG PRODUCTS, SUBJECT CHANGE WITHOUT NOTICE. NOTHING THIS DOCUMENT SHALL CONSTRUED GRANTING LICENSE, EXPRESS IMPLIED, ESTOPPEL OTHERWISE, INTELLECTUAL PROPERTY RI Abstract: .. BA100 32 Kwords 320000h-327FFFh 320000h-327FFFh . BA99 BA99 32 Kwords 318000h-31FFFFh 318000h-31FFFFh . BA98 BA98 32 Kwords 310000h-317FFFh 310000h-317FFFh . BA97 BA97 32 Kwords 308000h-30FFFFh 308000h-30FFFFh . BA96 BA96 32 Kwords 300000h-307FFFh 300000h-307FFFh . Bank 10. BA95 BA95 32 Kwords 2F8000h 2F8000h ..  Tags: BA139* BA138 BA138 diode BA139 BA169   K8A2815ET	659.45 Kb	47 Pages	Original
	First line: BA136 BA136* BA188 BA142 BA102 K8A2815ET(B)M FLASH MEMORY Document Title 128M x16) Synchronous Burst Multi Bank Flash Memory Revision History Revision History Abstract: .. BA100 32 Kwords 320000h-327FFFh 320000h-327FFFh . BA99 BA99 32 Kwords 318000h-31FFFFh 318000h-31FFFFh . BA98 BA98 32 Kwords 310000h-317FFFh 310000h-317FFFh . BA97 BA97 32 Kwords 308000h-30FFFFh 308000h-30FFFFh . BA96 BA96 32 Kwords 300000h-307FFFh 300000h-307FFFh . Bank 10. BA95 BA95 32 Kwords 2F8000h 2F8000h ..  Tags: BA102 BA142 BA188 BA136* BA136 unlock ba243  silcon diode  k8s28158  Ba91  BA259 transistor  BA248  ba245  BA244 equivalent  BA244  BA243 equivalent  BA243   K8A2815ET	632.41 Kb	47 Pages	Original
	First line: BA127 Diode BA102 TC58FVT641/B641FT/XB-70,-10 64-MBIT BITS BITS) CMOS FLASH MEMORY DESCRIPTION TC58FVT641/B641 67,108,864-bit, 3.0-V read-only electrically erasable programmable flash memory organized 8,388,608 words bits 4,194,304 words bits. TC58FVT641/B641 features commands Read, Program Erase op Abstract: .. BA100 H H L L H L L * * * 640000H 640000H ~64FFFFH 64FFFFH 320000H 320000H ~327FFFH 327FFFH . BA101 BA101 H H L L H L H * * * 650000H 650000H ~65FFFFH 65FFFFH 328000H 328000H ~32FFFFH 32FFFFH . BA102 BA102 H H L L H H L * * * 660000H 660000H ~66FFFFH 66FFFFH 330000H 330000H ~337FFFH 337FFFH . BK12 BK12 . BA103 BA103 H H L L H H H * * * 670000H 670000H ..  Tags: BA127 Diode BA95*  BA125  BA117*  BA102  BA100   TC58FVT641 B641FT XB-70	580.56 Kb	53 Pages	Original
	First line: BA102 TC58FVM6(T/B)2A(FT/XB)65 64MBIT BITS BITS) CMOS FLASH MEMORY DESCRIPTION TC58FVM6T2A/B2A 67108864-bit, 3.0-V read-only electrically erasable programmable flash memory organized 8388608 words bits 4194304 words bits. TC58FVM6T2A/B2A features commands Read, Program Erase operations allow easy in Abstract: .. BA100 H H L L H L L * * * 640000h 640000h ~64FFFFh 64FFFFh 320000h 320000h ~327FFFh 327FFFh . BA101 BA101 H H L L H L H * * * 650000h 650000h ~65FFFFh 65FFFFh 328000h 328000h ~32FFFFh 32FFFFh . BA102 BA102 H H L L H H L * * * 660000h 660000h ~66FFFFh 66FFFFh 330000h 330000h ~337FFFh 337FFFh . BA103 BA103 H H L L H H H * * * 670000h 670000h ~67FFFFh 67FFFFh ..  Tags: TC58FVM6T2AFT65*  BA50  BA102  BA100   TC58FVM6 TC58FVM6T2A B2A	708.89 Kb	61 Pages	Original
	First line: TH50VSF3680AASB diode ba103 BA102 TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION TH50VSF3680/3681AASB mixed multi-chip package containing 8,388,608-bit Full CMOS SRAM 67,108,864-bit flash memory. CIOS CIOF Abstract: .. BA100 H H L L H L L * * * 640000H 640000H ~64FFFFH 64FFFFH 320000H 320000H ~327FFFH 327FFFH . BA101 BA101 H H L L H L H * * * 650000H 650000H ~65FFFFH 65FFFFH 328000H 328000H ~32FFFFH 32FFFFH . BA102 BA102 H H L L H H L * * * 660000H 660000H ~66FFFFH 66FFFFH 330000H 330000H ~337FFFH 337FFFH . BK12 BK12 . BA103 BA103 H H L L H H H * * * 670000H 670000H ..  Tags: diode ba103 TH50VSF3680AASB TH50VSF3681AASB*  BA127  BA116  BA102  BA100   TH50VSF3680 3681AASB	573.72 Kb	55 Pages	Original
	First line: TC58FYM6T2AFT70* BA102 TC58FVM6 (T/B) (FT/XB) 64MBIT BITS/4M BITS) CMOS FLASH MEMORY DESCRIPTION TC58FYM6T2A/B2A 67108864-bit, 3.0-V read-only electrically erasable programmable flash memory organized 8388608 bits 4194304 bits. TC58FYM6T2A/B2A features commands Read, Program Erase operations allow e Abstract: .. BA100 H H L L H L L * * * 640000h 640000h ~64FFFFh 64FFFFh 320000h 320000h ~327FFFh 327FFFh . BA101 BA101 H H L L H L H * * * 650000h 650000h ~65FFFFh 65FFFFh 328000h 328000h ~32FFFFh 32FFFFh . BA102 BA102 H H L L H H L * * * 660000h 660000h ~66FFFFh 66FFFFh 330000h 330000h ~337FFFh 337FFFh . BA103 BA103 H H L L H H H * * * 670000h 670000h ~67FFFFh 67FFFFh ..  Tags: TC58FYM6T2AFT70* BA43  ba112  BA102  ba100   TC58FVM6 TC58FYM6T2A B2A	535.62 Kb	62 Pages	Original
	First line: BA102* BA102 TC58FVT641/B641FT/XB-70,-10 64-MBIT BITS BITS) CMOS FLASH MEMORY DESCRIPTION TC58FVT641/B641 67,108,864-bit, 3.0-V read-only electrically erasable programmable flash memory organized 8,388,608 words bits 4,194,304 words bits. TC58FVT641/B641 features commands Read, Program Erase operati Abstract: .. BA100 H H L L H L L * * * 640000H 640000H ~64FFFFH 64FFFFH 320000H 320000H ~327FFFH 327FFFH . BA101 BA101 H H L L H L H * * * 650000H 650000H ~65FFFFH 65FFFFH 328000H 328000H ~32FFFFH 32FFFFH . BA102 BA102 H H L L H H L * * * 660000H 660000H ~66FFFFH 66FFFFH 330000H 330000H ~337FFFH 337FFFH . BK12 BK12 . BA103 BA103 H H L L H H H * * * 670000H 670000H ..  Tags: BA102* BA95*  BA117*  BA102  BA100   TC58FVT641 B641FT XB-70	588.96 Kb	53 Pages	Original
	First line: TC58FVM6(T/B)2A(FT/XB)65 64MBIT BITS/4M BITS) CMOS FLASH MEMORY DESCRIPTION TC58FVM6T2A/B2A 67108864-bit, 3.0-V read-only electrically erasable programmable flash memory organized 8388608 words bits 4194304 words bits. TC58FVM6T2A/B2A features commands Read, Program Erase operations allow easy inter Abstract: .. BA100 H H L L H L L * * * 640000h 640000h ~64FFFFh 64FFFFh 320000h 320000h ~327FFFh 327FFFh . BA101 BA101 H H L L H L H * * * 650000h 650000h ~65FFFFh 65FFFFh 328000h 328000h ~32FFFFh 32FFFFh . BA102 BA102 H H L L H H L * * * 660000h 660000h ~66FFFFh 66FFFFh 330000h 330000h ~337FFFh 337FFFh . BA103 BA103 H H L L H H H * * * 670000h 670000h ~67FFFFh 67FFFFh ..  Tags: TC58FVM6T2AFT65*  TC58FV  microprocessors and interfacing programming and h  BA125  BA124  BA102  BA100   TC58FVM6 TC58FVM6T2A B2A	751.32 Kb	61 Pages	Original
	First line: TH50VSF4682/4683AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION TH50VSF4682/4683AASB mixed multi-chip package containing 16,777,216-bit Full CMOS SRAM 67,108,864-bit flash memory. CIOS CIOF inputs used select optimal memor Abstract: .. BA100 H H L L H L L * * * 640000H 640000H ~64FFFFH 64FFFFH 320000H 320000H ~327FFFH 327FFFH . BA101 BA101 H H L L H L H * * * 650000H 650000H ~65FFFFH 65FFFFH 328000H 328000H ~32FFFFH 32FFFFH . BA102 BA102 H H L L H H L * * * 660000H 660000H ~66FFFFH 66FFFFH 330000H 330000H ~337FFFH 337FFFH . BK12 BK12 . BA103 BA103 H H L L H H H * * * 670000H 670000H ..  Tags: BA133 diode  BA133  BA127  BA117*  BA111  BA102  BA100   TH50VSF4682 4683AASB	571.3 Kb	55 Pages	Original
	First line: NAND FLASH BGA SAMSUNG MCP BA102 KBB0xA500M T402 Multi-Chip Package MEMORY MEMORY Abstract: .. BA100 1 1 0 0 1 0 0 X X X 64/32 640000H-64FFFFH 640000H-64FFFFH 320000H-327FFFH 320000H-327FFFH . BA99 BA99 1 1 0 0 0 1 1 X X X 64/32 630000H-63FFFFH 630000H-63FFFFH 318000H-31FFFFH 318000H-31FFFFH . KBB0xA500M KBB0xA500M - T402 T402 . Revision 1.2 June 2003. 71 - 7. MCP MEMORY. Table 1. NOR Flash ..  Tags: SAMSUNG MCP NAND FLASH BGA MCP MEMORY  KBB0xA500M*  BA102  BA100  "NOR Flash" 4MB   KBB0xA500M	1314.29 Kb	71 Pages	Original
	First line: NAND FLASH BGA KBB0XA300M BA99�* BA102 SAMSUNG MCP KBB0xA300M T402 Multi-Chip Package MEMORY Preliminary MEMORY Abstract: .. BA100 1 1 0 0 1 0 0 X X X 64/32 640000H-64FFFFH 640000H-64FFFFH 320000H-327FFFH 320000H-327FFFH . BA99 BA99 1 1 0 0 0 1 1 X X X 64/32 630000H-63FFFFH 630000H-63FFFFH 318000H-31FFFFH 318000H-31FFFFH . KBB0xA300M KBB0xA300M - T402 T402 . Revision 1.0 June 2003. 71 - 7. MCP MEMORY. Preliminary. Table ..  Tags: SAMSUNG MCP BA99Â* NAND FLASH BGA MCP MEMORY  KBB0XA300M  BA102  BA100   KBB0xA300M	1317.31 Kb	71 Pages	Original
	First line: NAND FLASH BGA BA102 KAB0xD100M TxGP Multi-Chip Package MEMORY Only MEMORY Abstract: .. BA100 1 1 0 0 1 0 0 X X X 64/32 640000H-64FFFFH 640000H-64FFFFH 320000H-327FFFH 320000H-327FFFH . BA99 BA99 1 1 0 0 0 1 1 X X X 64/32 630000H-63FFFFH 630000H-63FFFFH 318000H-31FFFFH 318000H-31FFFFH . KAB0xD100M KAB0xD100M - TxGP. Revision 1.11 August 2003. - 6 -. MCP MEMORY. SEC Only. Table 1 ..  Tags: NAND FLASH BGA MCP MEMORY  KAB0xD100M  BGA24  ba112  BA102  BA100  "decoding" "Nor flash" "samsung electronics"   KAB0xD100M	1357.3 Kb	72 Pages	Original
	First line: ECH information� ECH information SAMSUNG MCP BA102 KBB0xB400M Multi-Chip Package MEMORY Preliminary MEMORY Abstract: .. BA100 1 1 0 0 1 0 0 X X X 64/32 640000H-64FFFFH 640000H-64FFFFH 320000H-327FFFH 320000H-327FFFH . BA99 BA99 1 1 0 0 0 1 1 X X X 64/32 630000H-63FFFFH 630000H-63FFFFH 318000H-31FFFFH 318000H-31FFFFH . KBB0xB400M KBB0xB400M . Revision 0.0 July 2003. - 9 -. MCP MEMORY. Preliminary. Table 3. Top ..  Tags: SAMSUNG MCP ECH information ECH information MCP MEMORY  KBB0xB400M  BA102  BA100  "NOR Flash" 4MB   KBB0xB400M	1464.86 Kb	82 Pages	Original
	First line: diode BA148 BA259 BA243 equivalent BA244* BA138 diode TC58FVM7(T/B)2AFT(65/80) 128-MBIT (16M BITS/8M BITS) CMOS FLASH MEMORY DESCRIPTION TC58FVM7T2A/B2A 134217728-bit, 3.0-V read-only electrically erasable programmable flash memory organized 16777216 bits 8388608 bits. TC58FVM7T2A/B2A features comma Abstract: .. BA100 L H H L L H L L * * * 640000h 640000h ~64FFFFh 64FFFFh 320000h 320000h ~327FFFh 327FFFh . BA101 BA101 L H H L L H L H * * * 650000h 650000h ~65FFFFh 65FFFFh 328000h 328000h ~32FFFFh 32FFFFh . BA102 BA102 L H H L L H H L * * * 660000h 660000h ~66FFFFh 66FFFFh 330000h 330000h ~337FFFh 337FFFh . BA103 BA103 L H H L L H H H * * * 670000h 670000h ..  Tags: BA138 diode BA244* BA243 equivalent BA259 diode BA148 BA244  BA225  ba222*  BA216  BA212  BA205  ba199  BA194  BA182  BA173  BA163   TC58FVM7 TC58FVM7T2A B2A	494.22 Kb	69 Pages	Original
	First line: BA102 TC58FVM6B5BTG65 TC58FVM6(T/B)5B(TG/XG)65 TOSHIBA DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS BITS) CMOS FLASH MEMORY DESCRIPTION Lead-Free Abstract: .. BA100 H H L L H L L * * * 320000h 320000h ~327FFFh 327FFFh . BA101 BA101 H H L L H L H * * * 328000h 328000h ~32FFFFh 32FFFFh . BA102 BA102 H H L L H H L * * * 330000h 330000h ~337FFFh 337FFFh . BA103 BA103 H H L L H H H * * * 338000h 338000h ~33FFFFh 33FFFFh . BA104 BA104 H H L H L L L * * * 340000h 340000h ~347FFFh 347FFFh . BA105 BA105 H H L H L L ..  Tags: TC58FVM6B5BTG65 BA102   TC58FVM6	691.35 Kb	80 Pages	Original
	First line: BA102 TC58FVM6(T/B)5B(TG/XG)65 TOSHIBA DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS BITS) CMOS FLASH MEMORY DESCRIPTION Lead-Free Abstract: .. BA100 H H L L H L L * * * 320000h 320000h ~327FFFh 327FFFh . BA101 BA101 H H L L H L H * * * 328000h 328000h ~32FFFFh 32FFFFh . BA102 BA102 H H L L H H L * * * 330000h 330000h ~337FFFh 337FFFh . BA103 BA103 H H L L H H H * * * 338000h 338000h ~33FFFFh 33FFFFh . BA104 BA104 H H L H L L L * * * 340000h 340000h ~347FFFh 347FFFh . BA105 BA105 H H L H L L ..  Tags: tc58fvm6t5  TC58FVM6B5BTG65  tc58fvm6b5  ba87  BA102  BA100   TC58FVM6	655.5 Kb	79 Pages	Original
	First line: diode BA148 BA182 ba139 BA204 TC58FVM7 (T/B) 2AFT (65/80) 128-MBIT (16M BITS/8M BITS) CMOS FLASH MEMORY DESCRIPTION TC58FVM7T2A/B2A 134217728-bit, 3.0-V read-only electrically erasable programmable flash memory organized 16777216 bits 8388608 bits. TC58FVM7T2A/B2A features commands Read, Program Era Abstract: .. BA100 L H H L L H L L * * * 640000h 640000h ~64FFFFh 64FFFFh 320000h 320000h ~327FFFh 327FFFh . BA101 BA101 L H H L L H L H * * * 650000h 650000h ~65FFFFh 65FFFFh 328000h 328000h ~32FFFFh 32FFFFh . BA102 BA102 L H H L L H H L * * * 660000h 660000h ~66FFFFh 66FFFFh 330000h 330000h ~337FFFh 337FFFh . BA103 BA103 L H H L L H H H * * * 670000h 670000h ..  Tags: ba139 BA182 diode BA148 ba66  BA244  BA233  BA230  BA216  BA214  BA209  BA204  BA195*  BA189  BA185   TC58FVM7 TC58FVM7T2A B2A	613.28 Kb	69 Pages	Original
	First line: BA102 TC58FVM6B5BTG65 TC58FVM6(T/B)5B(TG/XG)65 TOSHIBA DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS BITS) CMOS FLASH MEMORY DESCRIPTION Lead-Free Abstract: .. BA100 H H L L H L L * * * 320000h 320000h ~327FFFh 327FFFh . BA101 BA101 H H L L H L H * * * 328000h 328000h ~32FFFFh 32FFFFh . BA102 BA102 H H L L H H L * * * 330000h 330000h ~337FFFh 337FFFh . BA103 BA103 H H L L H H H * * * 338000h 338000h ~33FFFFh 33FFFFh . BA104 BA104 H H L H L L L * * * 340000h 340000h ~347FFFh 347FFFh . BA105 BA105 H H L H L L ..  Tags: TC58FVM6T5BTG65  TC58FVM6B5BTG65  TC58FVM6  BA102  BA100   TC58FVM6	679.2 Kb	80 Pages	Original
	First line: MCP MEMORY BA238 KBF0x0800M Multi-Chip Package MEMORY Preliminary MEMORY Abstract: .. BA100 32 Kwords 320000h-327FFFh 320000h-327FFFh . BA99 BA99 32 Kwords 318000h-31FFFFh 318000h-31FFFFh . BA98 BA98 32 Kwords 310000h-317FFFh 310000h-317FFFh . BA97 BA97 32 Kwords 308000h-30FFFFh 308000h-30FFFFh . BA96 BA96 32 Kwords 300000h-307FFFh 300000h-307FFFh . Bank 10. BA95 BA95 32 Kwords 2F8000h 2F8000h ..  Tags: BA238 SAMSUNG MCp nand  SAMSUNG MCP  MCP MEMORY  BA244  ba236  BA233  BA225  BA216  ba210  BA209  BA198   KBF0x0800M	1370.42 Kb	72 Pages	Original
	First line: K8F56(57)15ET(B)M FLASH MEMORY 256Mb M-die Specification INFORMATION THIS DOCUMENT PROVIDED RELATION SAMSUNG PRODUCTS, SUBJECT CHANGE WITHOUT NOTICE. NOTHING THIS DOCUMENT SHALL CONSTRUED GRANTING LICENSE, EXPRESS IMPLIED, ESTOPPEL OTHERWISE, INTELLECTUAL PROPERTY RIGHTS SAMSUNG PRODUCTS TECHNOLOGY. Abstract: .. BA100 64 kwords 640000h-64FFFFh 640000h-64FFFFh . BA99 BA99 64 kwords 630000h-63FFFFh 630000h-63FFFFh . BA98 BA98 64 kwords 620000h-62FFFFh 620000h-62FFFFh . BA97 BA97 64 kwords 610000h-61FFFFh 610000h-61FFFFh . BA96 BA96 64 kwords 600000h-60FFFFh 600000h-60FFFFh . Bank 10. BA95 BA95 64 kwords 5F0000h 5F0000h ..  Tags:   datasheet abstract..	1046.76 Kb	59 Pages	Original
	First line: K8S2815ET(B)C FLASH MEMORY 128Mb C-die Specification INFORMATION THIS DOCUMENT PROVIDED RELATION SAMSUNG PRODUCTS, SUBJECT CHANGE WITHOUT NOTICE. NOTHING THIS DOCUMENT SHALL CONSTRUED GRANTING LICENSE, EXPRESS IMPLIED, ESTOPPEL OTHERWISE, INTELLECTUAL PROPERTY RIGHTS SAMSUNG PRODUCTS TECHNOLOGY. INF Abstract: .. BA100 32 Kwords 320000h-327FFFh 320000h-327FFFh . BA99 BA99 32 Kwords 318000h-31FFFFh 318000h-31FFFFh . BA98 BA98 32 Kwords 310000h-317FFFh 310000h-317FFFh . BA97 BA97 32 Kwords 308000h-30FFFFh 308000h-30FFFFh . BA96 BA96 32 Kwords 300000h-307FFFh 300000h-307FFFh . Bank 10. BA95 BA95 32 Kwords 2F8000h 2F8000h ..  Tags:   K8S2815ET	613.22 Kb	60 Pages	Original
	First line: BA501 BA505 BA516 BA512 BA516 diode K8A5615ET(B)A FLASH MEMORY Document Title 256M (16M x16) Synchronous Burst Multi Bank Flash Memory Revision History Revision History Abstract: .. BA100 32 Kwords 320000h-327FFFh 320000h-327FFFh . BA99 BA99 32 Kwords 318000h-31FFFFh 318000h-31FFFFh . BA98 BA98 32 Kwords 310000h-317FFFh 310000h-317FFFh . BA97 BA97 32 Kwords 308000h-30FFFFh 308000h-30FFFFh . BA96 BA96 32 Kwords 300000h-307FFFh 300000h-307FFFh . Bank 13. BA95 BA95 32 Kwords 2F8000h 2F8000h ..  Tags: BA505 BA501 F280*  CB80*  BA518  BA517  BA516 diode  BA516  BA514  BA513*  BA512*  BA511  ba508*   K8A5615ET	660.72 Kb	60 Pages	Original
	First line: BA169* TC58FVM7(T/B)2AFT(65/80) 128-MBIT (16M BITS BITS) CMOS FLASH MEMORY DESCRIPTION TC58FVM7T2A/B2A 134217728-bit, 3.0-V read-only electrically erasable programmable flash memory organized 16777216 words bits 8388608 words bits. TC58FVM7T2A/B2A features commands Read, Program Erase operations all Abstract: .. BA100 L H H L L H L L * * * 640000h 640000h ~64FFFFh 64FFFFh 320000h 320000h ~327FFFh 327FFFh . BA101 BA101 L H H L L H L H * * * 650000h 650000h ~65FFFFh 65FFFFh 328000h 328000h ~32FFFFh 32FFFFh . BA102 BA102 L H H L L H H L * * * 660000h 660000h ~66FFFFh 66FFFFh 330000h 330000h ~337FFFh 337FFFh . BA103 BA103 L H H L L H H H * * * 670000h 670000h ..  Tags: BA169* microprocessors and interfacing programming and h  BA244  BA235  BA225  ba222*  BA216  ba210  BA205  BA192  BA164  BA154*   TC58FVM7 TC58FVM7T2A B2A	636.02 Kb	68 Pages	Original
	First line: TC58FVM7(T/B)2AFT(65/80) 128-MBIT (16M BITS/8M BITS) CMOS FLASH MEMORY DESCRIPTION TC58FVM7T2A/B2A 134217728-bit, 3.0-V read-only electrically erasable programmable flash memory organized 16777216 words bits 8388608 words bits. TC58FVM7T2A/B2A features commands Read, Program Erase operations allow e Abstract: .. BA100 L H H L L H L L * * * 640000h 640000h ~64FFFFh 64FFFFh 320000h 320000h ~327FFFh 327FFFh . BA101 BA101 L H H L L H L H * * * 650000h 650000h ~65FFFFh 65FFFFh 328000h 328000h ~32FFFFh 32FFFFh . BA102 BA102 L H H L L H H L * * * 660000h 660000h ~66FFFFh 66FFFFh 330000h 330000h ~337FFFh 337FFFh . BA103 BA103 L H H L L H H H * * * 670000h 670000h ..  Tags:   TC58FVM7 TC58FVM7T2A B2A	793.42 Kb	68 Pages	Original
	First line: BA128* TC58FYM7 (T/B) 2AFT70 128-MBIT (16M BITS/8M BITS) CMOS FLASH MEMORY DESCRIPTION TC58FYM7T2A/B2A 134217728-bit, 3.0-V read-only electrically erasable programmable flash memory organized 16777216 bits 8388608 bits. TC58FYM7T2A/B2A features commands Read, Program Erase operations allow easy inte Abstract: .. BA100 L H H L L H L L * * * 640000h 640000h ~64FFFFh 64FFFFh 320000h 320000h ~327FFFh 327FFFh . BA101 BA101 L H H L L H L H * * * 650000h 650000h ~65FFFFh 65FFFFh 328000h 328000h ~32FFFFh 32FFFFh . BA102 BA102 L H H L L H H L * * * 660000h 660000h ~66FFFFh 66FFFFh 330000h 330000h ~337FFFh 337FFFh . BA103 BA103 L H H L L H H H * * * 670000h 670000h ..  Tags: BA128* microprocessors and interfacing programming and h  BA244  BA225  BA216  BA191  BA189  BA185  BA155  BA154*  BA148  BA147   TC58FYM7 TC58FYM7T2A B2A	542.16 Kb	69 Pages	Original
	First line: TC58FVM7T2ATG65/TC58FVM7B2ATG65 128-MBIT (16M BITS BITS) CMOS FLASH MEMORY DESCRIPTION TC58FVM7T2A/B2A 134217728-bit, 3.0-V read-only electrically erasable programmable flash memory organized 16777216 words bits 8388608 words bits. TC58FVM7T2A/B2A features commands Read, Program Erase operations all Abstract: .. BA100 L H H L L H L L * * * 640000h 640000h ~64FFFFh 64FFFFh 320000h 320000h ~327FFFh 327FFFh . BA101 BA101 L H H L L H L H * * * 650000h 650000h ~65FFFFh 65FFFFh 328000h 328000h ~32FFFFh 32FFFFh . BA102 BA102 L H H L L H H L * * * 660000h 660000h ~66FFFFh 66FFFFh 330000h 330000h ~337FFFh 337FFFh . BA103 BA103 L H H L L H H H * * * 670000h 670000h ..  Tags: TC58FVM7T2ATG65  TC58FVM7B2ATG65  d3000*  BA244  BA225  BA216  BA164  BA155  BA154*  BA147  BA138 diode   TC58FVM7T2ATG65 TC58FVM7B2ATG65 TC58FVM7T2A B2A	435.53 Kb	65 Pages	Original
	First line: TC58FVM7T5BTG65 TC58FVM7B5BTG BA102 BA247 TC58FVM7T5B* TC58FVM7(T/B)5B(TG/XG)65 TOSHIBA DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS 128M BITS) CMOS FLASH MEMORY DESCRIPTION Lead-Free Abstract: .. BA100 L H H L L H L L * * * 320000h 320000h ~327FFFh 327FFFh . BA101 BA101 L H H L L H L H * * * 328000h 328000h ~32FFFFh 32FFFFh . BA102 BA102 L H H L L H H L * * * 330000h 330000h ~337FFFh 337FFFh . BA103 BA103 L H H L L H H H * * * 338000h 338000h ~33FFFFh 33FFFFh . BA104 BA104 L H H L H L L L * * * 340000h 340000h ~347FFFh 347FFFh . BA105 BA105 L ..  Tags: TC58FVM7T5B* BA247 BA102 TC58FVM7B5BTG TC58FVM7T5BTG65   TC58FVM7	799.86 Kb	88 Pages	Original
	First line: TC58FVM7T5B* BA181(A/B/C) BA102 TC58FVM7B5BTG65* TC58FVM7(T/B)5B(TG/XG)65 TOSHIBA DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS 128M BITS) CMOS FLASH MEMORY DESCRIPTION Lead-Free Abstract: .. BA100 L H H L L H L L * * * 320000h 320000h ~327FFFh 327FFFh . BA101 BA101 L H H L L H L H * * * 328000h 328000h ~32FFFFh 32FFFFh . BA102 BA102 L H H L L H H L * * * 330000h 330000h ~337FFFh 337FFFh . BA103 BA103 L H H L L H H H * * * 338000h 338000h ~33FFFFh 33FFFFh . BA104 BA104 L H H L H L L L * * * 340000h 340000h ~347FFFh 347FFFh . BA105 BA105 L ..  Tags: TC58FVM7B5BTG65* BA102 BA181(A/B/C) TC58FVM7T5BTG  TC58FVM7T5B*  TC58FVM7B5BTG65  BA244  ba236  BA216  BA209  ba199  BA187  BA182  BA175   TC58FVM7	715.19 Kb	87 Pages	Original
	First line: 1D1F* BA203 ba259* ba473 BA505* K8F12(13)15ET(B)M FLASH MEMORY 512Mb M-die Specification INFORMATION THIS DOCUMENT PROVIDED RELATION SAMSUNG PRODUCTS, SUBJECT CHANGE WITHOUT NOTICE. NOTHING THIS DOCUMENT SHALL CONSTRUED GRANTING LICENSE, EXPRESS IMPLIED, ESTOPPEL OTHERWISE, INTELLECTUAL PROPERTY RIG Abstract: .. BA100 64 kwords 0640000h-064FFFFh 0640000h-064FFFFh . BA99 BA99 64 kwords 0630000h-063FFFFh 0630000h-063FFFFh . BA98 BA98 64 kwords 0620000h-062FFFFh 0620000h-062FFFFh . BA97 BA97 64 kwords 0610000h-061FFFFh 0610000h-061FFFFh . BA96 BA96 64 kwords 0600000h-060FFFFh 0600000h-060FFFFh . Bank13 Bank13 . BA95 BA95 64 kwords ..  Tags: BA505* ba473 ba259* BA203 1D1F*   datasheet abstract..	961.44 Kb	68 Pages	Original
	First line: BA311 BA313 ba406* ba508 BA389 PIN Diode K8C10(11)15ET(B)M FLASH MEMORY 512Mb M-die Specification K8C10(11)INFORMATION THIS DOCUMENT PROVIDED RELATION SAMSUNG PRODUCTS, SUBJECT CHANGE WITHOUT NOTICE. NOTHING THIS DOCUMENT SHALL CONSTRUED GRANTING LICENSE, EXPRESS IMPLIED, ESTOPPEL OTHERWISE, INTELLE Abstract: .. BA100 64 kwords 0640000h-064FFFFh 0640000h-064FFFFh . BA99 BA99 64 kwords 0630000h-063FFFFh 0630000h-063FFFFh . BA98 BA98 64 kwords 0620000h-062FFFFh 0620000h-062FFFFh . BA97 BA97 64 kwords 0610000h-061FFFFh 0610000h-061FFFFh . BA96 BA96 64 kwords 0600000h-060FFFFh 0600000h-060FFFFh . Bank13 Bank13 . BA95 BA95 64 kwords ..  Tags: BA389 PIN Diode ba508 ba406* BA313 BA311   datasheet abstract..	1079.66 Kb	68 Pages	Original
	First line: BA176* BA514 BA505* BA311 BA308 Advanced Information K8F12(13)15ET(B)M Flash Memory 512Mb M-die Specification INFORMATION THIS DOCUMENT PROVIDED RELATION SAMSUNG PRODUCTS, SUBJECT CHANGE WITHOUT NOTICE. NOTHING THIS DOCUMENT SHALL CONSTRUED GRANTING LICENSE, EXPRESS IMPLIED, ESTOPPEL OTHERWISE, INTE Abstract: .. BA100 64 kwords 0640000h-064FFFFh 0640000h-064FFFFh . BA99 BA99 64 kwords 0630000h-063FFFFh 0630000h-063FFFFh . BA98 BA98 64 kwords 0620000h-062FFFFh 0620000h-062FFFFh . BA97 BA97 64 kwords 0610000h-061FFFFh 0610000h-061FFFFh . BA96 BA96 64 kwords 0600000h-060FFFFh 0600000h-060FFFFh . Bank13 Bank13 . BA95 BA95 64 kwords ..  Tags: BA308 BA311 BA505* BA514 BA176*   datasheet abstract..	744.94 Kb	72 Pages	Original
	First line: BA127 Diode K8S6415ET(B)B FLASH MEMORY Document Title x16) Muxed Burst Multi Bank Flash Memory Revision History Revision History Abstract: .. BA100 32 Kwords 320000h-327FFFh 320000h-327FFFh . BA99 BA99 32 Kwords 318000h-31FFFFh 318000h-31FFFFh . BA98 BA98 32 Kwords 310000h-317FFFh 310000h-317FFFh . BA97 BA97 32 Kwords 308000h-30FFFFh 308000h-30FFFFh . BA96 BA96 32 Kwords 300000h-307FFFh 300000h-307FFFh . Bank4. BA95 BA95 32 Kwords 2F8000h-2FFFFFh 2F8000h-2FFFFFh ..  Tags: BA127 Diode BA102  "NOR Flash" 4MB   K8S6415ET	672.3 Kb	39 Pages	Original
	Datasheets per page:  50 | 250 | 500

Access Notice

Unusual activity from your IP address or subnet. Our Cross reference data is temporarily hidden from view. One of our administrators will manually check this activity.

Search Syntax | Privacy Policy | Disclaimer
© 2012 Datasheet Archive