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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

B9D TRANSISTOR

Catalog Datasheet MFG & Type PDF Document Tags

B9D TRANSISTOR

Abstract: PNP Transistor b9d S8550LT1 PNP EPITAXIAL SILICON TRANSISTORS HIGH VOLTAGE TRANSISTOR: (PNP) SOT-23 - FEATURES Die Size 0.44*0.44mm Power dissipation PCM : 225mWTamb=25 Collector current ICM : 0.5A Collector-base voltage V(BR)CBO : 40V 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICSTamb=25 unless otherwise specified Parameter Collector-base Symbol breakdown voltage Test , CLASSIFICATION OF HFE(1) Rank B9C B9D B9E Range 120-200 160-300 280-400 Wing Shing
Wing Shing Computer Components
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B9D TRANSISTOR PNP Transistor b9d transistor B9C B9C transistor hfe pnp transistor sot23/B9C transistor

B9D TRANSISTOR

Abstract: PNP Transistor b9d UNISONIC TECHNOLOGIES CO., LTD 8550S PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 3 2 1 SOT-23 DESCRIPTION The UTC 8550S is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier and general , Box Bulk MARKING (For SOT-23 Package) B9_D L: Lead Free L: Halogen Free , TRANSISTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C, unless otherwise specified ) PARAMETER Collector-Base
Unisonic Technologies
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8050S 8550SL 8550SG SOT-23 marking B9D marking b9d UTC 8550SL PNP transistor 8050S 8550S-

B9D TRANSISTOR

Abstract: PNP Transistor b9d HI-SINCERITY Spec. No. : HE6813 Issued Date : 1997.08.11 Revised Date : 2004.08.17 Page No. : 1/4 MICROELECTRONICS CORP. HMBT8550 PNP EPITAXIAL TRANSISTOR Description The HMBT8550 is designed for general purpose amplifier applications. SOT-23 Features · High DC Current: hFE=150-400 at IC=150mA · Complementary to HMBT8050 Absolute Maximum Ratings · Maximum Temperatures Storage , Width 380us, Duty Cycle2% Classification Of hFE Rank B9C B9D B9E Range 100-200
Hi-Sincerity Microelectronics
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B9C MARK sot-23 Marking B9C

B9D TRANSISTOR

Abstract: PNP Transistor b9d HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6813 Issued Date : 1997.08.11 Revised Date : 2002.10.25 Page No. : 1/3 HMBT8550 PNP EPITAXIAL TRANSISTOR Description The HMBT8550 is designed for general purpose amplifier applications. Features SOT-23 · High DC Current: hFE=150-400 at IC=150mA · Complementary to HMBT8050 Absolute Maximum Ratings · Maximum Temperatures Storage Temperature , HMBT8550 B9C 100-200 B9D 150-300 B9E 250-500 HSMC Product Specification HI-SINCERITY
Hi-Sincerity Microelectronics
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MARKING B9E MARKING B9C HMBT8550B9C UL94V-0

B9D TRANSISTOR

Abstract: 4010B (any one Input) Total Power Dissipation (per package) Dissipation per Output Transistor for Top = Full , ) 4/8 f Z 7 SGS-THOMSON Ä 7# }saDCß©iiyiQns®B9D(Es 98 HCC/HCF4009UB HCC/HCF4010B Minimum
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4009U 4009UB 4010B 4049UB 4050B HCC4009UB/4010B

TCA160

Abstract: BY164 % M Jf â'¢i â  a 0 if 2 f A F125 Germanium p-n-p alloy-diffused transistor. For , \2 â'™t l ,4 -2 0 10 60 I 0/ - Germanium p-n-p alloy-diffused transistor , alloy-diffused transistor. For use as a mixer/oscillator and i.f. amplifier snieia in m.w. and l.w. a.m , Germanium p-n-p mesa transistor. For use! as a mixer/oscillator at frequencies up to| 860 MHz , MHzj 11 5 dB 7 dB Germanium p-n-p alloy-diffused transistor] For use as a mixer
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TCA160 BY164 Mullard C296 TAA310A TAA700 TBA480 AC187 BC157 BC158 BC159 BC186 BC187

3TE445

Abstract: 6ej7 AND INDEXES Explanation of Valve Base Connections Valve Base Diagrams Explanation of Transistor and Diode Connections Transistor Base Diagrams ' Diode and R e c tifie r Connections Integrated Circuit , capabilities of a transistor and are not recommended as design conditions. Included in this section are types , E .H .T .R e ctifiers section. A b rief description of the main purpose for which the transistor , transistor base connections are given after the data sections. SEMICONDUCTOR SIGNAL DIODES This section
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3TE445 6ej7 2N3303 TAA*310 GEX36/7 BYY32 H101/A SL621C 2300E/830 111/A SL630 CD2301/961