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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil

B9D TRANSISTOR

Catalog Datasheet MFG & Type PDF Document Tags

B9D TRANSISTOR

Abstract: PNP Transistor b9d S8550LT1 PNP EPITAXIAL SILICON TRANSISTORS HIGH VOLTAGE TRANSISTOR: (PNP) SOT-23 - FEATURES Die Size 0.44*0.44mm Power dissipation PCM : 225mWTamb=25 Collector current ICM : 0.5A Collector-base voltage V(BR)CBO : 40V 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICSTamb=25 unless otherwise specified Parameter Collector-base Symbol breakdown voltage Test , CLASSIFICATION OF HFE(1) Rank B9C B9D B9E Range 120-200 160-300 280-400 Wing Shing
Wing Shing Computer Components
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B9D TRANSISTOR PNP Transistor b9d transistor B9C B9C transistor hfe pnp transistor sot23/B9C transistor

B9D TRANSISTOR

Abstract: PNP Transistor b9d UNISONIC TECHNOLOGIES CO., LTD 8550S PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 3 2 1 SOT-23 DESCRIPTION The UTC 8550S is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier and general , Box Bulk MARKING (For SOT-23 Package) B9_D L: Lead Free L: Halogen Free , TRANSISTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C, unless otherwise specified ) PARAMETER Collector-Base
Unisonic Technologies
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8050S 8550SL 8550SG SOT-23 marking B9D marking b9d UTC 8550SL PNP transistor 8050S 8550S-

B9D TRANSISTOR

Abstract: PNP Transistor b9d HI-SINCERITY Spec. No. : HE6813 Issued Date : 1997.08.11 Revised Date : 2004.08.17 Page No. : 1/4 MICROELECTRONICS CORP. HMBT8550 PNP EPITAXIAL TRANSISTOR Description The HMBT8550 is designed for general purpose amplifier applications. SOT-23 Features · High DC Current: hFE=150-400 at IC=150mA · Complementary to HMBT8050 Absolute Maximum Ratings · Maximum Temperatures Storage , Width 380us, Duty Cycle2% Classification Of hFE Rank B9C B9D B9E Range 100-200
Hi-Sincerity Microelectronics
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B9C MARK sot-23 Marking B9C

B9D TRANSISTOR

Abstract: PNP Transistor b9d HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6813 Issued Date : 1997.08.11 Revised Date : 2002.10.25 Page No. : 1/3 HMBT8550 PNP EPITAXIAL TRANSISTOR Description The HMBT8550 is designed for general purpose amplifier applications. Features SOT-23 · High DC Current: hFE=150-400 at IC=150mA · Complementary to HMBT8050 Absolute Maximum Ratings · Maximum Temperatures Storage Temperature , HMBT8550 B9C 100-200 B9D 150-300 B9E 250-500 HSMC Product Specification HI-SINCERITY
Hi-Sincerity Microelectronics
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MARKING B9E MARKING B9C HMBT8550B9C UL94V-0

B9D TRANSISTOR

Abstract: 4010B (any one Input) Total Power Dissipation (per package) Dissipation per Output Transistor for Top = Full , ) 4/8 f Z 7 SGS-THOMSON Ä 7# }saDCß©iiyiQns®B9D(Es 98 HCC/HCF4009UB HCC/HCF4010B Minimum
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4009U 4009UB 4010B 4049UB 4050B HCC4009UB/4010B

BY164

Abstract: TCA160 % M Jf â'¢i â  a 0 if 2 f A F125 Germanium p-n-p alloy-diffused transistor. For , \2 â'™t l ,4 -2 0 10 60 I 0/ - Germanium p-n-p alloy-diffused transistor , alloy-diffused transistor. For use as a mixer/oscillator and i.f. amplifier snieia in m.w. and l.w. a.m , Germanium p-n-p mesa transistor. For use! as a mixer/oscillator at frequencies up to| 860 MHz , MHzj 11 5 dB 7 dB Germanium p-n-p alloy-diffused transistor] For use as a mixer
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BY164 TCA160 Mullard C296 TAA310A TAA700 TAA435 AC187 BC157 BC158 BC159 BC186 BC187

3TE445

Abstract: 6ej7 AND INDEXES Explanation of Valve Base Connections Valve Base Diagrams Explanation of Transistor and Diode Connections Transistor Base Diagrams ' Diode and R e c tifie r Connections Integrated Circuit , capabilities of a transistor and are not recommended as design conditions. Included in this section are types , E .H .T .R e ctifiers section. A b rief description of the main purpose for which the transistor , transistor base connections are given after the data sections. SEMICONDUCTOR SIGNAL DIODES This section
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3TE445 6ej7 2N3303 GEX36/7 ECC88 Ferranti zs70 H101/A SL621C 2300E/830 111/A SL630 CD2301/961