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TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC3612DP Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

B85 diode

Catalog Datasheet MFG & Type PDF Document Tags

b1c diode

Abstract: diode b1c 2403GB172-4DW, Trench 3 1700V IGBT, CAL3 diode Integrated current and temperature sensors Water cooling IIN , , Trench 3 1700V IGBT, CAL3 diode Integrated current and temperature sensors Water cooling Typical , 9ABCABDEAFF#16;#17;BD#18;#19;#20;#21;#22;#23; 9ABCABDEAFF#16;#17;BD#18;#19;#20;#21;#22;#23; 4777 977 BCCDEF#16;5DE#17;#18;E#19;51A#20;B85#27;19E/F.517#20;B BCCDEF#16;5DE#17;#18;E#19;587#20;B85 , 3777 BCCDEF#16;5DE#17;#18;E#19;51A#20;B85#27;19E/F.517#20;B BCCDEF#16;5DE#17;#18;E#19;587#20;B85#27;19E/F.5AA#20;B 4A77 #21;#22;#23;#24; #25;544775#21;#26;B
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b1c diode diode b1c EN50178 55A75 1EF52/-5

B85 diode

Abstract: Sensors Infrared light emitting diode, cast type SIR-320ST3F The SIR-320ST3F is a G a A s infrared light emitting d iode h o u se d in clear plastic. This device h a s a high lu m in ou s efficiency and a 940 nm spectrum suitable for silicon detectors. It is small and at the sa m e time ha s a wide radiation angle, m aking it ideal for com pact optical control equipment. · A p p lic a tio n s , * Pulse width = 0.1 msec, duty 1% Symbol Pd If If p * Limits 100 75 1.0 5 - 2 5 - b85 - 4 0 - b85
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B85 diode

sir563

Abstract: CT81 Sensors Infrared light emitting diode, cast type SIR-563ST3F The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940 nm spectrum suitable for silicon detectors. It has a wide radiation angle and is ideal for com pact optical control equipment. ·A pplications Optical control equipment Light source for remote control , p * Limits 160 100 1.0 5.0 - 2 5 - h85 - 4 0 - b85 Unit mW mA A V 'C `C Vr Topr Tstg
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sir563 CT81
Abstract: Sensors Infrared light emitting diode, side-view mold type SIM-20ST The SIM-20ST is a GaAs infrared light emitting diode housed in clear plastic. Side emission (with a $ 1.85 mm lens) and a 950 nm spectrum suitable for silicon detectors make it an ideal light source for sensors. It is particularly suited for use with a ROHM RPM-20PB. â'¢Applications Light source for sensors â'¢External , Diodes Parameter Power dissipation V Operating temperature Topr - 2 5 â'" b85 "C -
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RLD-78NP15

Abstract: B85 diode Laser Diodes AIGaAs laser diode RLD-78NP15 The RLD-78NP15 is the world's first mass-produced laser d io d e s th a t is m anufactured by m olecular beam epi taxy. The pro p e rtie s, h igh spe ed and high o u tp u t op e ra tio n characteristics this laser diode m ake it suitable for la ser printers. · E x te rn a l dim ensions (Unit: mm) · A p p lic a tio n s High speed, laser printers · F , 0 - b85 Unit mW V V "C T C 454 ramm Laser Diodes · E le c tric a l and optical
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B85 diode

Abstract: MITSUBISHI LASER DIODES p M o \c e 'n ûU,c l\rf\^s ar ect'cai100 ML7XX12 SERIES InGaAsP - M Q W - F P LASER DIODE ARRAYS s o ro e p a ra rn TYPE NAME DESCRIPTION M L 7X X 1 2 p ro , ) S ym bol Po V rl Tc Tstg Param eter Light ou tput pow er R everse V oltage (L aser diode) C ase tem perature S torage tem perature C onditions CW - - - R atings 6 2 0 - b85 - 4 0 - MOO Unit mW V °C , SERIES Novce T w 5 .,c firnits a 'e som ep a ta m InGaAsP - M Q W - F P LASER DIODE ARRAYS
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Abstract: Sensors Infrared light emitting diode, side-view mold type SIM-20ST The SIM-20ST is a GaAs infrared light emitting diode housed in clear plastic. Side em ission (with a < f> 1.85 mm lens) and a 950 nm spectrum suitable for silicon detectors m ake it an ideal light source for sensors. It is particularly suited for use with a ROHM RPM-20PB. ·A p p lic a tio n s Light source for sensors · E x te , % Symbol Pd If Ifp * Limits 80 50 1.0 5 - 2 5 - b85 -3 0 -+ 1 0 0 Unit mW mA A V `C "C I -
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smd diode 106a

Abstract: DIODE MARKING B85 Philips Semiconductors Product specification Schottky barrier rectifier diode BYG90 , barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular SOD106A , Philips Semiconductors Product specification Schottky barrier rectifier diode ELEC TR IC AL , .3 V r = VRRMmax! Tj = 100 °C; note 1; see Fig.3 Cd N ote 1. Pulsed test: tp = 300 jxs; 5 = 0.02. diode , Semiconductors Product specification Schottky barrier rectifier diode G R APH IC AL DATA BYG90-90 1
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01032B3 smd diode 106a DIODE MARKING B85 smd diode byg SOD106A byg 100 diode smd 106a

IEC50

Abstract: Infrared photosensor Sensors Reflective photosensor with encased reflector RPR-359F The RPR-359F is a reflective photosensor. The emitter is a GaAs infrared light emitting diode and the detector is a high-sensitivity, silicon planar phototransistor. A plastic lens is used for high sensitivity and a built-in visible light filter minimizes the influence of stray light. ·Applications Copiers Compact disk players ·Features 1) A , Limits Unit mA V mW V V mA mW °C "C RPR-359F 50 5 80 30 4.5 30 too - 2 5 - b85 - 4 0 - M00
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IEC50 Infrared photosensor

SIR-34ST3F

Abstract: infrared sensors reliability Sensors Infrared light emitting diode, cast type SIR-34ST3F The SIR-34ST3F is a G aAs infrared lig h t e m ittin g d io d e ho use d in cle ar plastic. T his de vice has a high lu m ino us efficiency and a 950 nm spectrum suitable for silicon detectors. It is small and at the same tim e has a w ide radiation angle, m aking it ideal for com p act optical control equipm ent. ·A p p lic a tio n , width = 0.1 msec, duty 1% Symbol Pd If If p * Limits 160 100 1.0 5 - 2 5 ' - b85 - 4 0 - h85
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infrared sensors reliability
Abstract: rd Ifd Parameter Light output power Reverse Voltage (Laser diode) Reverse Voltage (Photodiode , Ratings 6 2 20 2 Unit mW V V mA "C °C Tc Tstg - 4 0 - b85 - 4 0 - M 00 ELECTRICAL/OPTICAL -
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ML7XX11 ML776H11F ML774F11F

Photointerrupter rpi 574

Abstract: Sensors Photointerrupter, encased type RPI-574 The RPI-574 is a transm issive-type photointerrupter. The em itter is a GaAs infrared light em itting diode and the d e tector is a silicon planar phototransistor. A positioning pin is provided on the external case to allow precise m ou nt ing. ·A p p lic a tio n s Optical control equipm ent ·E x te rn a l dim ensions (Unit: mm) · F e a tu re s 1 , - b85 (-85 Unit mA V mW V V mA mW "C "C Operating temperature Storage temperature
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Photointerrupter rpi 574
Abstract: Maximum Ratings 30 15 - 3 0 - b85 - 3 0 - h90 ft Units mW V "C "C Power Dissipation Reverse , Time Test Circuit 10-3 % < is -K f -H- ) 10-10 Q LASER DIODE R \ I -o Z -~ Z VR -
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Abstract: Laser Diodes AIGaAs laser diodes RLD-78MV The RLD-78MV is the w o rld 's first m a ss-pro duced laser d io d e s to be mass produ ced by m olecular beam epitaxy. Low -noise is achieved th ro u g h se lf-p u lsa tio n . This laser diode is ideal fo r use in video disc players. â'¢E xte rn a l dimensions (Unit: mm) (3) M t y p e X â'f l â' ( 1) (2 ) â'¢A , 'C) Parameter G D lb b m noHm V 30 V Topr "C Tstg - 4 0 â'" b85 "C 1 T à S -
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Abstract: temperature Topr - 2 5 â'" b85 "C Storage temperature Tstg - 3 0 â'" 1-100 "C TflSfl'W , emitting diode Input frequency Parameter Symbol Typ. Unit Input frequency fc 1 MHz , non-interferring light emitting diode â'¢ E le c tric a l and optical characteristics of phototransistor Symbol -
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RPI-124

chn 630

Abstract: m m / m - k vw - ' » u - x Visible Light Emitting Diode Package Series Pl» 563fe* * * - K (J ü , G WS!, S ii) Visible Light Emitting Diode (J-types, GW-types, S-types) an s /jv s s u æ e â î , Visible Light Emitting Diode Package Series t- Taping Dimensions U n it :m U - JL'TÍ' Ü , Visible Light Emitting Diode Package Series K s a - K Absolute Maximum Ratings (T a= 2 5 , 10 4 LN1371 G-(TR) Green Green Clear 60 20 60 4 - 25 - b85 - 30 -
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chn 630 LN1871 LN1271 1271R- LN1871Y5- LN1271R

RB415D

Abstract: Diodes Schottky Barrier Diode RB415D â'¢Applications ©External dimensions (Units: mm) Low current rectification (cathode common twin model) â'¢Features 1)Compact mold model (SMD3) 2)High reliability 3)Two diodes with common cathode for excellent installation efficiency. â'¢Construction Silicon epitaxial 1.9±0.2 j^O.95 0 951 ¿(1)1® [pl Aèa 1 , temperature Topr -30â'"b85 °C '1 Mean output current per element; lo/2 "2 60 Hz for 1 ^ â'¢Electrical
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diode b83

Abstract: diode 1.5 ke 36 ca ) 0.3 tf 10' 10* 10" 9SM t (ms] Transient Thermal Resistance (Diode) B-85 /â'"- à M â , Units m ts Rth(J-c) Transistor 0.5 °c/w m m m Rth(J-c) Diode 1.6 'C/ w m ffi it Rth(c-f) With , Ã"S«J£ Vrtc (V) 2.0 Forward Voltage of Free Wheeling Diode B-84 2DI30M-050(30A) 100 50 30 ? ?
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diode b83 diode 1.5 ke 36 ca 500D M208 T151 transistor wm cms E82988

B85 diode

Abstract: DIODE B89 Rectifier PD-9.1123 IRGPC50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST5ÃFTRECOVERY DIODE Short , Pulsed Collector Current 100 A Ilm Clamped Inductive Load Current 0) i 100 i@tr = 100"C Diode Continuous Foward Current 25 I-'j Diode Maximum Forward Current too Short Circuit Withstand Time 10 , US , . Units ^DJC Jurcfccn-to-Case - !GBT - _ t 0.64 «9X- Junctiorvto-Case- Diode - â'" 0 , . T. = 150°C V,M Diode Forward Voltage Drop â'" 1 3 1 7 V k = 25A â'" 1.2 1.5 le = 25A. Tj
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DIODE B89

diode b83

Abstract: Selco * Itf 9*M t (ms) Transient Thermal Resistance (Diode) B-85 Sût WWliWBÃÏSni * -it » m * e » n , ) Transistor 0.5 °c/w m m m Rth(J-c) Diode 1.6 °c/w m « ta Rth(C-f) With Thermal Compound 0. 05 °c , of Free Wheeling Diode B-84 2DI30M-050(30A) 100 10 30 50 100 300 MWIt Vet (v) tX) Safe
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Selco B83 004 DF RV transistor
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