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DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592 visit Linear Technology - Now Part of Analog Devices
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518 visit Linear Technology - Now Part of Analog Devices
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1 visit Linear Technology - Now Part of Analog Devices
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

B85 diode

Catalog Datasheet MFG & Type PDF Document Tags

b1c diode

Abstract: diode b1c 2403GB172-4DW, Trench 3 1700V IGBT, CAL3 diode Integrated current and temperature sensors Water cooling IIN , , Trench 3 1700V IGBT, CAL3 diode Integrated current and temperature sensors Water cooling Typical , 9ABCABDEAFF#16;#17;BD#18;#19;#20;#21;#22;#23; 9ABCABDEAFF#16;#17;BD#18;#19;#20;#21;#22;#23; 4777 977 BCCDEF#16;5DE#17;#18;E#19;51A#20;B85#27;19E/F.517#20;B BCCDEF#16;5DE#17;#18;E#19;587#20;B85 , 3777 BCCDEF#16;5DE#17;#18;E#19;51A#20;B85#27;19E/F.517#20;B BCCDEF#16;5DE#17;#18;E#19;587#20;B85#27;19E/F.5AA#20;B 4A77 #21;#22;#23;#24; #25;544775#21;#26;B
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b1c diode diode b1c EN50178 55A75 1EF52/-5

B85 diode

Abstract: Sensors Infrared light emitting diode, cast type SIR-320ST3F The SIR-320ST3F is a G a A s infrared light emitting d iode h o u se d in clear plastic. This device h a s a high lu m in ou s efficiency and a 940 nm spectrum suitable for silicon detectors. It is small and at the sa m e time ha s a wide radiation angle, m aking it ideal for com pact optical control equipment. · A p p lic a tio n s , * Pulse width = 0.1 msec, duty 1% Symbol Pd If If p * Limits 100 75 1.0 5 - 2 5 - b85 - 4 0 - b85
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B85 diode

sir563

Abstract: CT81 Sensors Infrared light emitting diode, cast type SIR-563ST3F The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940 nm spectrum suitable for silicon detectors. It has a wide radiation angle and is ideal for com pact optical control equipment. ·A pplications Optical control equipment Light source for remote control , p * Limits 160 100 1.0 5.0 - 2 5 - h85 - 4 0 - b85 Unit mW mA A V 'C `C Vr Topr Tstg
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sir563 CT81
Abstract: Sensors Infrared light emitting diode, side-view mold type SIM-20ST The SIM-20ST is a GaAs infrared light emitting diode housed in clear plastic. Side emission (with a $ 1.85 mm lens) and a 950 nm spectrum suitable for silicon detectors make it an ideal light source for sensors. It is particularly suited for use with a ROHM RPM-20PB. â'¢Applications Light source for sensors â'¢External , Diodes Parameter Power dissipation V Operating temperature Topr - 2 5 â'" b85 "C -
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RLD-78NP15

Abstract: B85 diode Laser Diodes AIGaAs laser diode RLD-78NP15 The RLD-78NP15 is the world's first mass-produced laser d io d e s th a t is m anufactured by m olecular beam epi taxy. The pro p e rtie s, h igh spe ed and high o u tp u t op e ra tio n characteristics this laser diode m ake it suitable for la ser printers. · E x te rn a l dim ensions (Unit: mm) · A p p lic a tio n s High speed, laser printers · F , 0 - b85 Unit mW V V "C T C 454 ramm Laser Diodes · E le c tric a l and optical
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B85 diode

Abstract: MITSUBISHI LASER DIODES p M o \c e 'n ûU,c l\rf\^s ar ect'cai100 ML7XX12 SERIES InGaAsP - M Q W - F P LASER DIODE ARRAYS s o ro e p a ra rn TYPE NAME DESCRIPTION M L 7X X 1 2 p ro , ) S ym bol Po V rl Tc Tstg Param eter Light ou tput pow er R everse V oltage (L aser diode) C ase tem perature S torage tem perature C onditions CW - - - R atings 6 2 0 - b85 - 4 0 - MOO Unit mW V °C , SERIES Novce T w 5 .,c firnits a 'e som ep a ta m InGaAsP - M Q W - F P LASER DIODE ARRAYS
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Abstract: Sensors Infrared light emitting diode, side-view mold type SIM-20ST The SIM-20ST is a GaAs infrared light emitting diode housed in clear plastic. Side em ission (with a < f> 1.85 mm lens) and a 950 nm spectrum suitable for silicon detectors m ake it an ideal light source for sensors. It is particularly suited for use with a ROHM RPM-20PB. ·A p p lic a tio n s Light source for sensors · E x te , % Symbol Pd If Ifp * Limits 80 50 1.0 5 - 2 5 - b85 -3 0 -+ 1 0 0 Unit mW mA A V `C "C I -
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smd diode 106a

Abstract: DIODE MARKING B85 Philips Semiconductors Product specification Schottky barrier rectifier diode BYG90 , barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular SOD106A , Philips Semiconductors Product specification Schottky barrier rectifier diode ELEC TR IC AL , .3 V r = VRRMmax! Tj = 100 °C; note 1; see Fig.3 Cd N ote 1. Pulsed test: tp = 300 jxs; 5 = 0.02. diode , Semiconductors Product specification Schottky barrier rectifier diode G R APH IC AL DATA BYG90-90 1
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01032B3 smd diode 106a DIODE MARKING B85 smd diode byg SOD106A byg 100 diode smd 106a

IEC50

Abstract: Infrared photosensor Sensors Reflective photosensor with encased reflector RPR-359F The RPR-359F is a reflective photosensor. The emitter is a GaAs infrared light emitting diode and the detector is a high-sensitivity, silicon planar phototransistor. A plastic lens is used for high sensitivity and a built-in visible light filter minimizes the influence of stray light. ·Applications Copiers Compact disk players ·Features 1) A , Limits Unit mA V mW V V mA mW °C "C RPR-359F 50 5 80 30 4.5 30 too - 2 5 - b85 - 4 0 - M00
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IEC50 Infrared photosensor

SIR-34ST3F

Abstract: infrared sensors reliability Sensors Infrared light emitting diode, cast type SIR-34ST3F The SIR-34ST3F is a G aAs infrared lig h t e m ittin g d io d e ho use d in cle ar plastic. T his de vice has a high lu m ino us efficiency and a 950 nm spectrum suitable for silicon detectors. It is small and at the same tim e has a w ide radiation angle, m aking it ideal for com p act optical control equipm ent. ·A p p lic a tio n , width = 0.1 msec, duty 1% Symbol Pd If If p * Limits 160 100 1.0 5 - 2 5 ' - b85 - 4 0 - h85
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infrared sensors reliability
Abstract: rd Ifd Parameter Light output power Reverse Voltage (Laser diode) Reverse Voltage (Photodiode , Ratings 6 2 20 2 Unit mW V V mA "C °C Tc Tstg - 4 0 - b85 - 4 0 - M 00 ELECTRICAL/OPTICAL -
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ML7XX11 ML776H11F ML774F11F

Photointerrupter rpi 574

Abstract: Sensors Photointerrupter, encased type RPI-574 The RPI-574 is a transm issive-type photointerrupter. The em itter is a GaAs infrared light em itting diode and the d e tector is a silicon planar phototransistor. A positioning pin is provided on the external case to allow precise m ou nt ing. ·A p p lic a tio n s Optical control equipm ent ·E x te rn a l dim ensions (Unit: mm) · F e a tu re s 1 , - b85 (-85 Unit mA V mW V V mA mW "C "C Operating temperature Storage temperature
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Photointerrupter rpi 574
Abstract: Maximum Ratings 30 15 - 3 0 - b85 - 3 0 - h90 ft Units mW V "C "C Power Dissipation Reverse , Time Test Circuit 10-3 % < is -K f -H- ) 10-10 Q LASER DIODE R \ I -o Z -~ Z VR -
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Abstract: Laser Diodes AIGaAs laser diodes RLD-78MV The RLD-78MV is the w o rld 's first m a ss-pro duced laser d io d e s to be mass produ ced by m olecular beam epitaxy. Low -noise is achieved th ro u g h se lf-p u lsa tio n . This laser diode is ideal fo r use in video disc players. â'¢E xte rn a l dimensions (Unit: mm) (3) M t y p e X â'f l â' ( 1) (2 ) â'¢A , 'C) Parameter G D lb b m noHm V 30 V Topr "C Tstg - 4 0 â'" b85 "C 1 T à S -
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Abstract: temperature Topr - 2 5 â'" b85 "C Storage temperature Tstg - 3 0 â'" 1-100 "C TflSfl'W , emitting diode Input frequency Parameter Symbol Typ. Unit Input frequency fc 1 MHz , non-interferring light emitting diode â'¢ E le c tric a l and optical characteristics of phototransistor Symbol -
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RPI-124

chn 630

Abstract: m m / m - k vw - ' » u - x Visible Light Emitting Diode Package Series Pl» 563fe* * * - K (J ü , G WS!, S ii) Visible Light Emitting Diode (J-types, GW-types, S-types) an s /jv s s u æ e â î , Visible Light Emitting Diode Package Series t- Taping Dimensions U n it :m U - JL'TÍ' Ü , Visible Light Emitting Diode Package Series K s a - K Absolute Maximum Ratings (T a= 2 5 , 10 4 LN1371 G-(TR) Green Green Clear 60 20 60 4 - 25 - b85 - 30 -
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chn 630 LN1871 LN1271 1271R- LN1871Y5- LN1271R

RB415D

Abstract: Diodes Schottky Barrier Diode RB415D â'¢Applications ©External dimensions (Units: mm) Low current rectification (cathode common twin model) â'¢Features 1)Compact mold model (SMD3) 2)High reliability 3)Two diodes with common cathode for excellent installation efficiency. â'¢Construction Silicon epitaxial 1.9±0.2 j^O.95 0 951 ¿(1)1® [pl Aèa 1 , temperature Topr -30â'"b85 °C '1 Mean output current per element; lo/2 "2 60 Hz for 1 ^ â'¢Electrical
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diode b83

Abstract: diode 1.5 ke 36 ca ) 0.3 tf 10' 10* 10" 9SM t (ms] Transient Thermal Resistance (Diode) B-85 /â'"- à M â , Units m ts Rth(J-c) Transistor 0.5 °c/w m m m Rth(J-c) Diode 1.6 'C/ w m ffi it Rth(c-f) With , Ã"S«J£ Vrtc (V) 2.0 Forward Voltage of Free Wheeling Diode B-84 2DI30M-050(30A) 100 50 30 ? ?
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diode b83 diode 1.5 ke 36 ca 500D M208 T151 transistor wm cms E82988

B85 diode

Abstract: DIODE B89 Rectifier PD-9.1123 IRGPC50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST5ÃFTRECOVERY DIODE Short , Pulsed Collector Current 100 A Ilm Clamped Inductive Load Current 0) i 100 i@tr = 100"C Diode Continuous Foward Current 25 I-'j Diode Maximum Forward Current too Short Circuit Withstand Time 10 , US , . Units ^DJC Jurcfccn-to-Case - !GBT - _ t 0.64 «9X- Junctiorvto-Case- Diode - â'" 0 , . T. = 150°C V,M Diode Forward Voltage Drop â'" 1 3 1 7 V k = 25A â'" 1.2 1.5 le = 25A. Tj
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DIODE B89

diode b83

Abstract: Selco * Itf 9*M t (ms) Transient Thermal Resistance (Diode) B-85 Sût WWliWBÃÏSni * -it » m * e » n , ) Transistor 0.5 °c/w m m m Rth(J-c) Diode 1.6 °c/w m « ta Rth(C-f) With Thermal Compound 0. 05 °c , of Free Wheeling Diode B-84 2DI30M-050(30A) 100 10 30 50 100 300 MWIt Vet (v) tX) Safe
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Selco B83 004 DF RV transistor
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