NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: B50000H-B5FFFFH B40000H-B4FFFFH B40000H-B4FFFFH B30000H-B3FFFFH B30000H-B3FFFFH B20000H-B2FFFFH B20000H-B2FFFFH B10000H-B1FFFFH B10000H-B1FFFFH B00000H-B0FFFFH B00000H-B0FFFFH ... | Original |
74 pages, |
FB0000h-FBFFFFh 9F0000h-9FFFFFh MX29LW128T/B/U/D 128M-BIT MX29LW128T/B/U/D abstract |
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| Abstract: K8F56 K8F56(57)15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For ... | Original |
59 pages, |
samsung nor flash 15ET BA167 BA184 K8F56 K8F5615ETM 06SEC K8F56 abstract |
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| Abstract: mx29ga257ehxci MX29GA256ELXCI-90Q addr55 MX29GA257EHXCI-90Q SEC555 B50000h-B5FFFFh B60000h-B6FFFFh B70000h-B7FFFFh B80000h-B8FFFFh B90000h-B9FFFFh BA0000h-BAFFFFh ... | Original |
70 pages, |
MX29GA129E L MX29GA129E mx29ga257 MX29GA MX29GA256/257E MX29GA128/129E PM1484 MX29GA256/257E abstract |
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| Abstract: MX29GA257EHXCI-90Q 29GL256 29gl128 B50000h-B5FFFFh B60000h-B6FFFFh B70000h-B7FFFFh B80000h-B8FFFFh B90000h-B9FFFFh BA0000h-BAFFFFh ... | Original |
70 pages, |
mx29ga256 MX29GA129E MX29GA MX29GA256/257E MX29GA128/129E PM1484 MX29GA256/257E abstract |
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| Abstract: B20000h-B2FFFFh B30000h-B3FFFFh B40000h-B4FFFFh B50000h-B5FFFFh B60000h-B6FFFFh B70000h-B7FFFFh ... | Original |
64 pages, |
SA10 Q0-Q15 MX29GA257 MX29GA129E MX29GA257E MX29GA129/257E PM1503 MX29GA129E abstract |
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| Abstract: 29GL256 B20000h-B2FFFFh B30000h-B3FFFFh B40000h-B4FFFFh B50000h-B5FFFFh B60000h-B6FFFFh B70000h-B7FFFFh ... | Original |
69 pages, |
SA154 Q0-Q15 MX29GA MX 128 D MX29GA256 750000H-75FFFFH 29gl128 MX29GA256/257E MX29GA128/129E PM1484 MX29GA256/257E abstract |
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| Abstract: 1A400 B40000hÂB4FFFFh SA149 SA149 64 Kwords 950000hÂ95FFFFh SA181 SA181 64 Kwords B50000hÂB5FFFFh SA150 SA150 64 ... | Original |
86 pages, |
wireless design guide 13th S29NS512P S29NS256P S29NS128P S29NS-P NS512 S29NS-P abstract |
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| Abstract: B50000hÂB5FFFFh SA150 SA150 64 Kwords 960000hÂ96FFFFh SA182 SA182 64 Kwords B60000hÂB6FFFFh SA151 SA151 64 ... | Original |
88 pages, |
S29NS512P S29NS256P S29NS128P NS512 bjw marking code S29NS-P S29NS-P abstract |
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| Abstract: B50000hÂB5FFFFh SA150 SA150 64 Kwords 960000hÂ96FFFFh SA182 SA182 64 Kwords B60000hÂB6FFFFh SA151 SA151 64 ... | Original |
86 pages, |
S29NS512P S29NS256P S29NS128P S29NS-P S29NS-P abstract |
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| Abstract: Rev. 1.3, May. 2010 K8P5516UZB K8P5516UZB 256Mb B-die NOR FLASH 56TSOP 56TSOP, 64FBGA 64FBGA, Page Mode 2.7V ~ 3.6V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung E ... | Original |
59 pages, |
serial flash 256Mb fast erase 56TSOP 0004H K8P5516UZB-P BA156 ba148 BA138 diode samsung nor flash K8P5516 K8P5516UZB 64FBGA K8P5516UZB abstract |
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| Abstract: 2003 9 , , , AMD "Am" "MBM" , , AMD DS05�914� DATA SHEET CMOS 128 M (16 M � 8/8 M � 16) BIT MirrorFlashTM MBM29PL12LM MBM29PL12LM 10 MBM29PL12LM MBM29PL12LM , 134,217,728 bit , 3.0 V CMOS , , MBM29PL12LM MBM29PL12LM , 16 M � 8 bit ( ) , 8 M � 16 bit ( ) , 32K word (64K Byte) 256 , 56 TSOP ( ) 80 FBGA , ( ) ( ) , ( ) MBM29PL12LM MBM29PL12LM , , , Part No. MBM29PL12LM10 MBM29PL12LM10 VCC 3.0 V 3.6 V VCCQ ... | Original |
69 pages, |
SGA-64 MBM29PL12LM FPT-56P-M01 DS05 datasheet abstract |
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| Abstract: TC58FVM7 TC58FVM7(T/B)2AFT(65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT 128-MBIT (16M Ã- 8 BITS/8M Ã- 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 Ã- 8 bits or as 8388608 Ã- 16 bits. The TC58FVM7T2A/B2A TC58FVM7T2A/B2A features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Pro ... | Original |
69 pages, |
diode ba189 datasheet diode BA170 TC58FVM7T2AFT65 TC58FVM7B2A BA140 diode ba148 BA122 ba60 BA226 diode BA230 Diode BA168 BA244 ba139 BA138 TC58FVM7 128-MBIT TC58FVM7 abstract |
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| Abstract: TC58FVM7 TC58FVM7(T/B)2AFT(65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT 128-MBIT (16M Ã- 8 BITS / 8M Ã- 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words Ã- 8 bits or as 8388608 words Ã- 16 bits. The TC58FVM7T2A/B2A TC58FVM7T2A/B2A features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC sta ... | Original |
68 pages, |
TC58FVM7T2ATG65 TC58FVM7T2AFT65 TC58FVM7T2A TC58FVM7B2A TC58 ef80 BA169 BA167 TC58FVM7B2ATG65 TC58FVM7 128-MBIT TC58FVM7T2A/B2A TC58FVM7 abstract |
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| Abstract: TC58FVM7T2ATG65/TC58FVM7B2ATG65 TC58FVM7T2ATG65/TC58FVM7B2ATG65 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT 128-MBIT (16M Ã- 8 BITS / 8M Ã- 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words Ã- 8 bits or as 8388608 words Ã- 16 bits. The TC58FVM7T2A/B2A TC58FVM7T2A/B2A features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are bas ... | Original |
65 pages, |
TC58FVM7T2A TC58FVM7T2 TC58FVM7T TC58FVM7B2A BA234 BA127 TC58FVM7T2ATG65 TC58FVM7B2ATG65 TC58FVM7T2ATG65/TC58FVM7B2ATG65 128-MBIT TC58FVM7T2A/B2A TC58FVM7T2ATG65/TC58FVM7B2ATG65 abstract |
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| Abstract: TC58FVM7 TC58FVM7 (T/B) 2AFT (65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT 128-MBIT (16M Ã- 8 BITS/8M Ã- 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 Ã- 8 bits or as 8388608 Ã- 16 bits. The TC58FVM7T2A/B2A TC58FVM7T2A/B2A features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The ... | Original |
69 pages, |
TC58FVM7T2AFT65 TC58FVM7T2A TC58FVM7T2 TC58FVM7B2A TC58 diode BA148 BA182 BA204 ba139 TC58FVM7 128-MBIT TC58FVM7T2A/B2A TC58FVM7 abstract |
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| Abstract: TC58FVM7 TC58FVM7(T/B)2AFT(65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT 128-MBIT (16M Ã- 8 BITS/8M Ã- 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words Ã- 8 bits or as 8388608 words Ã- 16 bits. The TC58FVM7T2A/B2A TC58FVM7T2A/B2A features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC stand ... | Original |
68 pages, |
TC58FVM7T2AFT65 TC58FVM7T2A TC58FVM7B2A TC58 ba148 TC58FVM7 128-MBIT TC58FVM7T2A/B2A TC58FVM7 abstract |
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| Abstract: TC58FYM7 TC58FYM7 (T/B) 2AFT70 2AFT70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT 128-MBIT (16M Ã- 8 BITS/8M Ã- 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FYM7T2A/B2A TC58FYM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 Ã- 8 bits or as 8388608 Ã- 16 bits. The TC58FYM7T2A/B2A TC58FYM7T2A/B2A features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Progra ... | Original |
69 pages, |
TC58FYM7T2AFT70 TC58FYM7B2AFT70 TC58 BA128 TC58FYM7T TC58FYM7 2AFT70 128-MBIT TC58FYM7T2A/B2A TC58FYM7 abstract |
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| Abstract: MBM29PL12LM10 MBM29PL12LM10 ( ) MBM29PL12LM MBM29PL12LM 10 Cover Sheet Spansion Spansion Publication Number MBM29PL12LM MBM29PL12LM Revision DS05-20914-3 DS05-20914-3 Issue Date August 8, 2007 D a t a S h e e t ( R e t i r e d P r o d u c t ) 2 MBM29PL12LM MBM29PL12LM_DS05-20914-3 DS05-20914-3 August 8, 2007 2003 9 , , , AMD "Am" "MBM" , , AMD DS05�914� DATA SHEET CMOS 128 M (16 M � 8/8 M � 16) BIT MirrorFlashTM MBM29PL12LM MBM29PL12LM ... | Original |
71 pages, |
SA247 MBM29PL12LM FPT-56P-M01 DS05 SA244 SA240 SA213 SA195 sa223 MBM29PL12LM10 MBM29PL12LM10 abstract |
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