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B3 ho transistor

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Abstract: B-3 IR2101 Functional Block Diagram VB Q HV LEVEL SHIFT HIN PULSE FILTER R HO , Connection up to 600V VCC VCC VB HIN HIN HO LIN LIN VS COM LO TO LOAD , Offset Voltage VB - 25 VB + 0.3 VHO High Side Floating Output Voltage VS - 0.3 VB + 0.3 , VCC + 0.3 VIN Logic Input Voltage (HIN & LIN) -0.3 Units VCC + 0.3 dVs/dt , Parameter Definition Value Min. Max. VB High Side Floating Supply Absolute Voltage VS + 10 International Rectifier
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IR2101S MP150 ir2101 datasheet IR2101 AN B3 ho transistor EME6300 MP190
Abstract: which operates up to 600 volts. Typical Connection up to 600V VCC VCC VB HIN HIN HO , Offset Voltage VB - 25 VB + 0.3 VHO High Side Floating Output Voltage VS - 0.3 VB + 0.3 , VCC + 0.3 VIN Logic Input Voltage (HIN & LIN) -0.3 Units VCC + 0.3 dVs/dt , Parameter Definition Value Min. Max. VB High Side Floating Supply Absolute Voltage VS + 10 VS + 20 VS High Side Floating Supply Offset Voltage Note 1 600 VHO High Side International Rectifier
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Abstract: B -1 6 v B3 HO ZJ v s LO C l VCC [ I HIN OE On [ I COM SO-8 VB HO n Z1 n Vs , Temperature (Soldering, 10 seconds) (8 Lead DIP) (8 Lead SOIC) (8 Lead DIP) (8 Lead SOIC) Max. 625 VB + 0.3 VB + 0.3 25 Vcc + 0.3 V cc + 0.3 50 1.0 0.625 125 200 150 150 300 Units -0.3 -0.3 -0.3 - - , . Parameter Symbol vB vs VhO Vcc Vlo V|N Ta Value Min. VS + 10 Note 1 Vs 10 0 0 -40 Definition High , LIN) Ambient Temperature Max. VS + 20 600 VB 20 Vcc Vcc 125 Units V °C Note 1: Logic -
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IR2103 A/210 IR2103S
Abstract: clock pulse (B3) 4 VO Video output 14 ^VBI Vertical shift register clock pulse (B 1) 5 LG Output load transistor gate 15 PT P-well for protection circuit 6 OG , V0 d Output load transistor gate voltage N 3 oK 1 Vlg (Supplied internally) Output gate , there is no FPN picture. Note 2 ) Absolute maximum ratings: â'"0 . 2 < V Sllbâ'"V pt < + 5 5 (V ) â'" 0 . 2 < V # v ~ V pt < + 2 8 (V ) Note 3) The LG and OG pins should each be grounded via a -
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MN3762MAE N3762M 3762M DIP020-C-0600A
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line NPN Silico n RF Pow er Transistor Designed , Angles with 20:1 V S W R @ 15.5 Vdc and 2.0 dB Overdrive 65 W, 512 MHz RF POWER TRANSISTOR NPN SILICON , Degradation in Output Power DELTA V RE PORT (NORMALLY SHORTED) C13 - 1 1 B3: B2 B4 " 12.5 Vdc C19 _ L + -L cm ' C15]_ J Ç 1 6 C17J_ X X _[C18 I 3 L2 10 h F J ] 0.18 nF II XU C20 10 - c ° .1 8 n F £ £ C3 RF INPUT r .HO C 4 ÿ N 1 /H Z Z FO H' l -
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ERIE CAPACITORS MURATA ERIE CAPACITOR ERIE CAPACITORS TYPE K erie capacitor C16-- C18-- HV100R GRH71 3HS0006-XX MRF658
Abstract: ) RDOy 14 Read Data Output (differential x-y) OWx 15 Inductive Write head connection for the head HO (differential x-y) OWy 16 Inductive Write head connection for the head HO (differential x-y) ORx 17 MR Read head connection for the head HO (differential x-y) OGND 18 Specific ground connection for the head HO ORy 19 MR Read head connection for the head HO (differential x-y) 1 Wx 20 Inductive Write head , formula: lMR = 0.5x^x (10 + 16d4 + 8d3 + 4d2 + 2d1 +d0) ext (in mA), where d4 to dO are bits (either 0 -
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hard disk head preamp MAGNETIC HEAD impedance BF transistor series 90 Pre amplifier hdd MA4853 TDA5152X TDA5152
Abstract: 1MBH60-090 ^±IGBT IGBT INSULATED GATE BIPOLAR TRANSISTOR : Outline Drawings â  Features , ) 180 A a ^ ? * m Pc 260 W m & su m. s T, + 150 « # ìa m Ts« -40-+ 150 °c , , Ic â'"60A, Vce = + 15V Rg = 80, Rl â'"4.0ÌÌ 1.0 US â'¢SMtttöiifc : Thermal Characteristics , 500 0 20 A0 60 BO 100 120 HO te^&m Tj (°C) Gate Threshold Voltage vs Junction Temperature 100 , ¡ f^tS lc (A) Typical Transconductances lcXG.9- lc ICX0.1 f vcc vgex0.1-j£- n / B-3 - -
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H60-090 induction heater 090 P460 T151 T760 T810
Abstract: -3 PGOâ'"3 Output port (High-voltage port) GOâ'"3 PHOâ'"3 Output port (High-voltage port) HO-3 PIO, 1 , .) PBO-3 Input Input port Boto B3 (Normal voltage) Capable of 4-bit input and single-bit decision for , PHO-3 Output Output port Ho to H3 (Segment driver output) Capable of 4-bit output and single-bit set , for evaluation, connect a feedback resistor (approximately 1Mohm). X Ho VlL(4) vllo 3 fHDI , ) DSB=Output inhibit at HOLD mode (Output transistor OFF) Voo Ports E to I D- 0 L Internal bus Functions â -
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EN2367B LC6512A LC6502D LC6502C 6502B LC6513A F3J inverter board F3J inverter LC6505C 6513d LC6512D LC6502 6505D LC6502B/6502D 6505B/6505D
Abstract: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6718 PRELIMINARY DATA SH EET ISSU E B - JU L Y 1997 , B* Å' 3ZI b3 ZETEX ZHB6718 NPN TRANSISTORS ELECTRICAL CHARACTERISTICS (a tT amb= 25Â , cycle < 2%. NPN TRANSISTOR TYPICAL CHARACTERISTICS O > 10m A 100m A Ic - C olle cto r C , ) VS IC 1A 1A 10A ZHB6718 PNP TRANSISTOR TYPICAL CHARACTERISTICS 10m A Ic - , Single Transistor "On" Transient Thermal Resistance Q1 and Q3 or Q2 and Q4 "On" Derating curve -
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Abstract: B1 59 A2 8 VSS 21 P52 34 SF 47 82 60 A3 9 DPORT 22 P53 35 P10 48 B3 61 A4 10 DCY 23 CF 36 P11 49 , instruction [MOV A, Pj. I/O (INPUT) 3-bit I/O port with latch. Ho|d request / release signal input P21 I/O , OUTPUT Internal clock output B3 - 80 Internal bus data output DCY Internal operation state signal , signal input VDD Power Supply + 5V VSS 0V (GND) 090290 7-54 TOSHIBA TMP42C00 INPUT/OUTPUT , with a pull-down transistor â lOkiJ t> -
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TMP42C00Y TLCS-42 42C00 CS-42 PGA64
Abstract: â  Undervoltage lockout â  Current detection and limiting loop to limit driven power transistor , ­ tion. The protection circuitry detects over-current in the driven power transistor and limits the gate , Voltage VB - 25 VB + 0.3 Vh O High Side Floating Output Voltage VS - 0.3 V B + 0.3 Vcc Logic Supply Voltage -0.3 25 V|N Logic Input Voltage -0.3 Vcc + 0.3 V e RR Error Signal Voltage -0.3 Vcc + 0.3 VS - 0.3 VB + 0.3 Allowable Offset Supply Voltage -
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IR2125
Abstract: Silicon RF Power Transistor Designed for 26 volts microwave large-signal, common emitter, class A and , POWER TRANSISTOR NPN SILICON · · · · · · · MAXIMUM RATINGS Rating C ollector-E m itter Voltage C , Junction Temperature T h e g ra p h a b o v e d is p la y s c a lc u la te d M T B F in ho urs x a m p e r , (« ) 3.28 + j9.07 3.85 + j 10.4 4.55 + j1 1 .4 5.45 + j1 1 .9 6.20 + j 12.2 ZOL* (« ) Z jn 4.62 + j2.23 4.35 + j3.41 4.08 + j3.60 3.80 + j3.78 3.55 + j3.84 Zo l * = = Input im pedance is a balanced -
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DIODE ku 1490 k 246 transistor 1.4901 bd135 equivalent MRF15090/D
Abstract: NOTES 2 3 4 2 3 5 5 6 7 2, 3 8 Rev. 0 4/94 EST©]Q EWTal Ho] b2 b3 c c1 D E e 0.100 BSC , HARRIS S E M I C O N D U C T O R HFA3127/883 Ultra High Frequency Transistor Array Description The HFA3127/883 is an Ultra High Frequency Transistor Array fabricated on the Harris , Under the Provisions of Paragraph 1.2.1. · · · NPN Transistor (fT , : 3.04 x 105A /cm 2 TRANSISTOR COUNT: 5 Floating SUBSTRATE POTENTIAL: Metallization Mask Layout -
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harris 8 lead cerdip DIMENSIONS 5962-9474901MEA MIL-STD883 1-800-4-HARRIS
Abstract: ° to +70°C T A = - 4 0 â' to + 8 5 °C TA = 0 ° to +70°C TA = - 4 0 ° to +85°C T a = 0° to + 7 0 â'C T a = - 4 0 ° to +85°C b3b7253 0100SÃ"2 Package P SUFFIX D , â'" (Rs = 100 £ , V c m = 0 V, V o = 0 2 = + 15 V, V EE = - 1 5 V, T a = + 25 °C = +S.0 V, V , ho = T |o w ,0 Thigh Input Common M ode Voltage Range V V |C R T a = +25°C E e 'o , 100 â'" 25 100 â'" â'" â'" 20 â'" â'" V C C = + 5 .0 V, V EE - 0 V, R l -
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MC33071/72/74 MC34071/72/74 MC34071/72/73 MC34071 MC33071
Abstract: DISCRETE SEMICONDUCTORS BITÂ S y i I T PXT4401 NPN switching transistor Product , Semiconductors Product specification NPN switching transistor FEATURES · High current (max. 600 mA) · Low , transistor in a SOT89 plastic package. PNP complement: PXT4403. MARKING TYPE NUMBER PXT4401 MARKING CODE , specification NPN switching transistor THERMAL CHARACTERISTICS SYMBOL R fh j-a R fh j-s PXT4401 , Semiconductors Product specification NPN switching transistor PXT4401 V BB V CC V0 (probe -
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Abstract: DISCRETE SEMICONDUCTORS BITÂ S y i I T PXT2907A PNP switching transistor Product , Semiconductors Product specification PNP switching transistor FEATURES · High current (max. 600 mA) · Low , base PXT2907A DESCRIPTION DESCRIPTION PNP switching transistor in a SOT89 plastic package. NPN , transistor THERMAL CHARACTERISTICS SYMBOL R f h j- a R f h j-s PXT2907A PARAMETER thermal resistance , Philips Semiconductors Product specification PNP switching transistor PXT2907A V BB V CC -
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PXT2222A
Abstract: DISCRETE SEMICONDUCTORS BITÂ S y i I T PXT3904 NPN switching transistor Product , Semiconductors Product specification NPN switching transistor FEATURES · Low current (max. 100 mA) · Low , PXT3904 DESCRIPTION DESCRIPTION NPN switching transistor in a SOT89 plastic package. PNP complement , Semiconductors Product specification NPN switching transistor THERMAL CHARACTERISTICS SYMBOL R f h j- a R , 14 3 Philips Semiconductors Product specification NPN switching transistor PXT3904 -
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za sot89 PXT3906
Abstract: DISCRETE SEMICONDUCTORS BITÂ S y i I T PXT3906 PNP switching transistor Product , Semiconductors Product specification PNP switching transistor FEATURES · Low current (max. 100 mA) · Low , collector base PXT3906 DESCRIPTION DESCRIPTION PNP switching transistor in a SOT89 plastic package , transistor THERMAL CHARACTERISTICS SYMBOL R f h j- a R f h j-s PXT3906 PARAMETER thermal resistance , specification PNP switching transistor PXT3906 V BB V CC V0 (probe) 450 D. oscilloscope -
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Abstract: DISCRETE SEMICONDUCTORS BITÂ S y i I T PXT4403 PNP switching transistor Product , Semiconductors Product specification PNP switching transistor FEATURES · High current (max. 600 mA) · Low , Switching and linear amplification. 3 DESCRIPTION PNP switching transistor in a SOT89 plastic package , specification PNP switching transistor THERMAL CHARACTERISTICS SYMBOL R f h j- a R f h j-s PXT4403 , 3 Philips Semiconductors Product specification PNP switching transistor PXT4403 V BB -
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marking code P2T transistor marking code p2T
Abstract: DISCRETE SEMICONDUCTORS BITÂ S y i I T PXTA92 PNP high-voltage transistor Product , Semiconductors Product specification PNP high-voltage transistor FEATURES · Low current (max. 100 mA) · , transistor in a SOT89 plastic package. NPN complement: PXTA42. MARKING TYPE NUMBER PXTA92 PXTA93 , Product specification PNP high-voltage transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s , 29 3 Philips Semiconductors Product specification PNP high-voltage transistor PACKAGE -
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Marking BA SOT89
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