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Part Manufacturer Description Datasheet BUY
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
LP395Z/LFT1 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 visit Texas Instruments

B3 ho transistor

Catalog Datasheet MFG & Type PDF Document Tags

ir2101 datasheet

Abstract: IR2101 B-3 IR2101 Functional Block Diagram VB Q HV LEVEL SHIFT HIN PULSE FILTER R HO , Connection up to 600V VCC VCC VB HIN HIN HO LIN LIN VS COM LO TO LOAD , Offset Voltage VB - 25 VB + 0.3 VHO High Side Floating Output Voltage VS - 0.3 VB + 0.3 , VCC + 0.3 VIN Logic Input Voltage (HIN & LIN) -0.3 Units VCC + 0.3 dVs/dt , Parameter Definition Value Min. Max. VB High Side Floating Supply Absolute Voltage VS + 10
International Rectifier
Original
IR2101S MP150 ir2101 datasheet IR2101 AN B3 ho transistor EME6300 MP190

IR2101

Abstract: ir2101 datasheet which operates up to 600 volts. Typical Connection up to 600V VCC VCC VB HIN HIN HO , Offset Voltage VB - 25 VB + 0.3 VHO High Side Floating Output Voltage VS - 0.3 VB + 0.3 , VCC + 0.3 VIN Logic Input Voltage (HIN & LIN) -0.3 Units VCC + 0.3 dVs/dt , Parameter Definition Value Min. Max. VB High Side Floating Supply Absolute Voltage VS + 10 VS + 20 VS High Side Floating Supply Offset Voltage Note 1 600 VHO High Side
International Rectifier
Original
silicon rectifier data manual

IR2103

Abstract: B -1 6 v B3 HO ZJ v s LO C l VCC [ I HIN OE On [ I COM SO-8 VB HO n Z1 n Vs , Temperature (Soldering, 10 seconds) (8 Lead DIP) (8 Lead SOIC) (8 Lead DIP) (8 Lead SOIC) Max. 625 VB + 0.3 VB + 0.3 25 Vcc + 0.3 V cc + 0.3 50 1.0 0.625 125 200 150 150 300 Units -0.3 -0.3 -0.3 - - , . Parameter Symbol vB vs VhO Vcc Vlo V|N Ta Value Min. VS + 10 Note 1 Vs 10 0 0 -40 Definition High , LIN) Ambient Temperature Max. VS + 20 600 VB 20 Vcc Vcc 125 Units V °C Note 1: Logic
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IR2103 A/210 IR2103S
Abstract: clock pulse (B3) 4 VO Video output 14 ^VBI Vertical shift register clock pulse (B 1) 5 LG Output load transistor gate 15 PT P-well for protection circuit 6 OG , V0 d Output load transistor gate voltage N 3 oK 1 Vlg (Supplied internally) Output gate , there is no FPN picture. Note 2 ) Absolute maximum ratings: â'"0 . 2 < V Sllbâ'"V pt < + 5 5 (V ) â'" 0 . 2 < V # v ~ V pt < + 2 8 (V ) Note 3) The LG and OG pins should each be grounded via a -
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MN3762MAE N3762M 3762M DIP020-C-0600A

ERIE CAPACITORS

Abstract: MURATA ERIE CAPACITOR MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line NPN Silico n RF Pow er Transistor Designed , Angles with 20:1 V S W R @ 15.5 Vdc and 2.0 dB Overdrive 65 W, 512 MHz RF POWER TRANSISTOR NPN SILICON , Degradation in Output Power DELTA V RE PORT (NORMALLY SHORTED) C13 - 1 1 B3: B2 B4 " 12.5 Vdc C19 _ L + -L cm ' C15]_ J Ç 1 6 C17J_ X X _[C18 I 3 L2 10 h F J ] 0.18 nF II XU C20 10 - c ° .1 8 n F £ £ C3 RF INPUT r .HO C 4 ÿ N 1 /H Z Z FO H' l
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ERIE CAPACITORS MURATA ERIE CAPACITOR ERIE CAPACITORS TYPE K erie capacitor C16-- C18-- HV100R GRH71 3HS0006-XX MRF658

hard disk head preamp

Abstract: MAGNETIC HEAD impedance ) RDOy 14 Read Data Output (differential x-y) OWx 15 Inductive Write head connection for the head HO (differential x-y) OWy 16 Inductive Write head connection for the head HO (differential x-y) ORx 17 MR Read head connection for the head HO (differential x-y) OGND 18 Specific ground connection for the head HO ORy 19 MR Read head connection for the head HO (differential x-y) 1 Wx 20 Inductive Write head , formula: lMR = 0.5x^x (10 + 16d4 + 8d3 + 4d2 + 2d1 +d0) ext (in mA), where d4 to dO are bits (either 0
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hard disk head preamp MAGNETIC HEAD impedance Pre amplifier hdd BF transistor series 90 MA4853 TDA5152X TDA5152

1MBH60-090

Abstract: induction heater 090 1MBH60-090 ^±IGBT IGBT INSULATED GATE BIPOLAR TRANSISTOR : Outline Drawings â  Features , ) 180 A a ^ ? * m Pc 260 W m & su m. s T, + 150 « # ìa m Ts« -40-+ 150 °c , , Ic â'"60A, Vce = + 15V Rg = 80, Rl â'"4.0ÌÌ 1.0 US â'¢SMtttöiifc : Thermal Characteristics , 500 0 20 A0 60 BO 100 120 HO te^&m Tj (°C) Gate Threshold Voltage vs Junction Temperature 100 , ¡ f^tS lc (A) Typical Transconductances lcXG.9- lc ICX0.1 f vcc vgex0.1-j£- n / B-3 -
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H60-090 induction heater 090 P460 T151 T760 T810

F3J inverter board

Abstract: F3J inverter -3 PGOâ'"3 Output port (High-voltage port) GOâ'"3 PHOâ'"3 Output port (High-voltage port) HO-3 PIO, 1 , .) PBO-3 Input Input port Boto B3 (Normal voltage) Capable of 4-bit input and single-bit decision for , PHO-3 Output Output port Ho to H3 (Segment driver output) Capable of 4-bit output and single-bit set , for evaluation, connect a feedback resistor (approximately 1Mohm). X Ho VlL(4) vllo 3 fHDI , ) DSB=Output inhibit at HOLD mode (Output transistor OFF) Voo Ports E to I D- 0 L Internal bus Functions â
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EN2367B LC6512A LC6502D LC6502C 6502B LC6513A F3J inverter board F3J inverter LC6505C 6513d LC6512D LC6502 6505D LC6502B/6502D 6505B/6505D
Abstract: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6718 PRELIMINARY DATA SH EET ISSU E B - JU L Y 1997 , B* Å' 3ZI b3 ZETEX ZHB6718 NPN TRANSISTORS ELECTRICAL CHARACTERISTICS (a tT amb= 25Â , cycle < 2%. NPN TRANSISTOR TYPICAL CHARACTERISTICS O > 10m A 100m A Ic - C olle cto r C , ) VS IC 1A 1A 10A ZHB6718 PNP TRANSISTOR TYPICAL CHARACTERISTICS 10m A Ic - , Single Transistor "On" Transient Thermal Resistance Q1 and Q3 or Q2 and Q4 "On" Derating curve -
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TMP42C00Y

Abstract: TLCS-42 B1 59 A2 8 VSS 21 P52 34 SF 47 82 60 A3 9 DPORT 22 P53 35 P10 48 B3 61 A4 10 DCY 23 CF 36 P11 49 , instruction [MOV A, Pj. I/O (INPUT) 3-bit I/O port with latch. Ho|d request / release signal input P21 I/O , OUTPUT Internal clock output B3 - 80 Internal bus data output DCY Internal operation state signal , signal input VDD Power Supply + 5V VSS 0V (GND) 090290 7-54 TOSHIBA TMP42C00 INPUT/OUTPUT , with a pull-down transistor â lOkiJ t>
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TMP42C00Y TLCS-42 42C00 CS-42 PGA64
Abstract: â  Undervoltage lockout â  Current detection and limiting loop to limit driven power transistor , ­ tion. The protection circuitry detects over-current in the driven power transistor and limits the gate , Voltage VB - 25 VB + 0.3 Vh O High Side Floating Output Voltage VS - 0.3 V B + 0.3 Vcc Logic Supply Voltage -0.3 25 V|N Logic Input Voltage -0.3 Vcc + 0.3 V e RR Error Signal Voltage -0.3 Vcc + 0.3 VS - 0.3 VB + 0.3 Allowable Offset Supply Voltage -
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IR2125

DIODE ku 1490

Abstract: k 246 transistor Silicon RF Power Transistor Designed for 26 volts microwave large-signal, common emitter, class A and , POWER TRANSISTOR NPN SILICON · · · · · · · MAXIMUM RATINGS Rating C ollector-E m itter Voltage C , Junction Temperature T h e g ra p h a b o v e d is p la y s c a lc u la te d M T B F in ho urs x a m p e r , (« ) 3.28 + j9.07 3.85 + j 10.4 4.55 + j1 1 .4 5.45 + j1 1 .9 6.20 + j 12.2 ZOL* (« ) Z jn 4.62 + j2.23 4.35 + j3.41 4.08 + j3.60 3.80 + j3.78 3.55 + j3.84 Zo l * = = Input im pedance is a balanced
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DIODE ku 1490 k 246 transistor 1.4901 bd135 equivalent MRF15090/D

harris 8 lead cerdip DIMENSIONS

Abstract: NOTES 2 3 4 2 3 5 5 6 7 2, 3 8 Rev. 0 4/94 EST©]Q EWTal Ho] b2 b3 c c1 D E e 0.100 BSC , HARRIS S E M I C O N D U C T O R HFA3127/883 Ultra High Frequency Transistor Array Description The HFA3127/883 is an Ultra High Frequency Transistor Array fabricated on the Harris , Under the Provisions of Paragraph 1.2.1. · · · NPN Transistor (fT , : 3.04 x 105A /cm 2 TRANSISTOR COUNT: 5 Floating SUBSTRATE POTENTIAL: Metallization Mask Layout
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harris 8 lead cerdip DIMENSIONS 5962-9474901MEA MIL-STD883 1-800-4-HARRIS
Abstract: ° to +70°C T A = - 4 0 â' to + 8 5 °C TA = 0 ° to +70°C TA = - 4 0 ° to +85°C T a = 0° to + 7 0 â'C T a = - 4 0 ° to +85°C b3b7253 0100SÃ"2 Package P SUFFIX D , â'" (Rs = 100 £ , V c m = 0 V, V o = 0 2 = + 15 V, V EE = - 1 5 V, T a = + 25 °C = +S.0 V, V , ho = T |o w ,0 Thigh Input Common M ode Voltage Range V V |C R T a = +25°C E e 'o , 100 â'" 25 100 â'" â'" â'" 20 â'" â'" V C C = + 5 .0 V, V EE - 0 V, R l -
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MC33071/72/74 MC34071/72/74 MC34071/72/73 MC34071 MC33071
Abstract: DISCRETE SEMICONDUCTORS BITÂ S y i I T PXT4401 NPN switching transistor Product , Semiconductors Product specification NPN switching transistor FEATURES · High current (max. 600 mA) · Low , transistor in a SOT89 plastic package. PNP complement: PXT4403. MARKING TYPE NUMBER PXT4401 MARKING CODE , specification NPN switching transistor THERMAL CHARACTERISTICS SYMBOL R fh j-a R fh j-s PXT4401 , Semiconductors Product specification NPN switching transistor PXT4401 V BB V CC V0 (probe -
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Abstract: DISCRETE SEMICONDUCTORS BITÂ S y i I T PXT2907A PNP switching transistor Product , Semiconductors Product specification PNP switching transistor FEATURES · High current (max. 600 mA) · Low , base PXT2907A DESCRIPTION DESCRIPTION PNP switching transistor in a SOT89 plastic package. NPN , transistor THERMAL CHARACTERISTICS SYMBOL R f h j- a R f h j-s PXT2907A PARAMETER thermal resistance , Philips Semiconductors Product specification PNP switching transistor PXT2907A V BB V CC -
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PXT2222A

za sot89

Abstract: DISCRETE SEMICONDUCTORS BITÂ S y i I T PXT3904 NPN switching transistor Product , Semiconductors Product specification NPN switching transistor FEATURES · Low current (max. 100 mA) · Low , PXT3904 DESCRIPTION DESCRIPTION NPN switching transistor in a SOT89 plastic package. PNP complement , Semiconductors Product specification NPN switching transistor THERMAL CHARACTERISTICS SYMBOL R f h j- a R , 14 3 Philips Semiconductors Product specification NPN switching transistor PXT3904
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za sot89 PXT3906
Abstract: DISCRETE SEMICONDUCTORS BITÂ S y i I T PXT3906 PNP switching transistor Product , Semiconductors Product specification PNP switching transistor FEATURES · Low current (max. 100 mA) · Low , collector base PXT3906 DESCRIPTION DESCRIPTION PNP switching transistor in a SOT89 plastic package , transistor THERMAL CHARACTERISTICS SYMBOL R f h j- a R f h j-s PXT3906 PARAMETER thermal resistance , specification PNP switching transistor PXT3906 V BB V CC V0 (probe) 450 D. oscilloscope -
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marking code P2T

Abstract: transistor marking code p2T DISCRETE SEMICONDUCTORS BITÂ S y i I T PXT4403 PNP switching transistor Product , Semiconductors Product specification PNP switching transistor FEATURES · High current (max. 600 mA) · Low , Switching and linear amplification. 3 DESCRIPTION PNP switching transistor in a SOT89 plastic package , specification PNP switching transistor THERMAL CHARACTERISTICS SYMBOL R f h j- a R f h j-s PXT4403 , 3 Philips Semiconductors Product specification PNP switching transistor PXT4403 V BB
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marking code P2T transistor marking code p2T

Marking BA SOT89

Abstract: DISCRETE SEMICONDUCTORS BITÂ S y i I T PXTA92 PNP high-voltage transistor Product , Semiconductors Product specification PNP high-voltage transistor FEATURES · Low current (max. 100 mA) · , transistor in a SOT89 plastic package. NPN complement: PXTA42. MARKING TYPE NUMBER PXTA92 PXTA93 , Product specification PNP high-voltage transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s , 29 3 Philips Semiconductors Product specification PNP high-voltage transistor PACKAGE
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Marking BA SOT89
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