NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Transistors 2SB1189 2SB1189 / 2SB1238 2SB1238 / 2SB899F 2SB899F 2SD1767 2SD1767 / 2SD1859 2SD1859 / 2SD1200F 2SD1200F (96-618-B13) (96-750-D13 96-750-D13) 278 ... | Original |
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2SD1859 2SD1767 2SD1200F 2SB899F 2SB1189 2SB1238 B13 transistors 96-618-B13 96-750-D13 2SB1189 abstract |
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| Abstract: COLLMER SEMICONDUCTOR INC 4BE D m S53B712 S53B712 OOOlbCH bS7 «COL BIPOLAR TRANSISTORS ^ Ratings and Specifications "T 600 volts class power transistor modules for DC chopper • Power transistors and free wheels are built into one package. • Best suited for motor control applications using a chopper converter , usee. Grams Page 40 1DI50H-055 1DI50H-055 600 600 550 50 300 70 50 5 3 12 4 M204 175 Fig. B13 1DI50K-055 1DI50K-055 600 600 , B13 1DI200E-055 1DI200E-055 600 600 550 200 1000 70 200 5 2 12 3 M207 550 Fig. B12 1DI200F-055 1DI200F-055 600 600 550 200 ... | OCR Scan |
1 pages, |
B14 ON b17 diode 1DI200F-055 1DI150E-055 1DI150 diode b18 1DI75F-055 340 B14 550 b14 dc chopper circuit 1di200h 1DI150H055 1DI200h055 1DI100E100 S53B712 S53B712 abstract |
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| Abstract: Transistore File Number 1241 BD643 BD643, BD645 BD645, BD647 BD647, BD649 BD649 8-Ampere N-P-N Darlington Power Transistors , BD649 BD649 are monolithic silicon n-p-n Darlington transistors designed for low-and medium-frequency power , | 3fl7SDfll []0:ii72?4 & f 3875-8 f G~E sol ID~sTÂTE " 01E17274 01E17274' D 'T" 33""2-7 Darlington Power Transistors , curve for all types. 276 _ 0816 B-13 G E SOLI» STATE / G E SOLI» STATE Ol MT( 3fl7SDûl 0D1757S 0D1757S - 3875081" g e solid state 01e 17275 dt'si&'z-j _Darlington Power Transistors BD643 BD643, BD645 BD645, BD647 BD647 ... | OCR Scan |
4 pages, |
n69s BD649 BD647 BD645 BD643 B13 transistors BD643 abstract |
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| Abstract: AUY18 AUY18 PNP-Transistor for switching applications up to 8A The AUY 18 is a germanium PNP alloyed transistor in a case 8 A 3 DIN 41 878 (TO-8) The collector is electrically connected to the case. For insulated mounting of these transistors on a chassis, mounting parts or insulating parts Q62901 Q62901 - B13- B , Q62901 Q62901 - B13- B 00.85 Lf ! 8.2., -iZltO.lt!" Weight approx. 4.8 g Dimensions in mm - 18.6 - -HZ , ) The transistors AUY18 AUY18 are classified in groups of static forward current transfer ratio at -/C=5A- ... | OCR Scan |
4 pages, |
AUY18 100S B13 transistors Q62901 Q62901-B17-A Q62901-B17-B Q60120- AUY18 abstract |
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| Abstract: Transistors IC SMD Type NPN Silicon Epitaxia 2SC4173 2SC4173 Features High gain bandwidth product: fT=200MHz min. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Total power , B13 100 200 B14 150 300 www.kexin.com.cn 1 ... | Original |
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b14 smd 2SC4173 marking B12 b13 smd 2SC4173 abstract |
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| Abstract: AUY 29 are alloyed PNP germanium transistors in a case 3 C3 DIN 41 872 (sim. TO-41). The collectors are electrically connected to the case. For insulated mounting of these transistors on a chassis, insulating parts Q62901 Q62901 - B13 -A and Q62901-B13-B Q62901-B13-B are available, to be ordered separately. The transistors , -Y29 - P AUY 22 III Q60120-Y22- Q60120-Y22- C Mica disc Q62901 Q62901 -B13- A AUY 22 IV Q60120 Q60120 -Y22 - D Insulating nipple Q62901 Q62901 -B13- B Weight approx. 17 g Dimensions in mm Mica disc dry: ffth = 1.25 K/W Insulating ... | OCR Scan |
8 pages, |
Q62901-B13-B B13 transistors AUY21 3 TCA 700 Y AUY29 AUY 10 AUY22 AUY21 Q62901 Q60120 Q60120-Y21 Q60120-Y22- -B13- AUY29 abstract |
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| Abstract: insulated mounting of these transistors on a chassis, the insulating parts Q62901 Q62901 - B11 - A and Q62901 Q62901 -B13 , transistors ADY 27 are also available in pairs. Type Order number ADY 27 IV Q60104- Q60104- Y27- D ADY 27 V Q60104- Q60104- Y27- E ADY 27 paired Q 60104- Y27- P Mica disc Q 62901- B11 - A Insulating nipple Q62901 Q62901 - B13 , characteristics (7"case=25 °C) The transistors ADY 27 are classified in groups of DC current gain at - Zc= 1 A ... | OCR Scan |
5 pages, |
Q60104- ADY27 101F rca germanium transistor Q62901 ADY27 abstract |
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| Abstract: 2SC T> m flSBSbOS 0004373 7 HSIE6 . PNP Silicon Planar Transistors BD 487 _BD 488 SIEMENS AKTIENÛESELLSCHAF 04373 0 BD 487 and BD 488 are epitaxial PNP silicon planar transistors in a plastic package similar to TO 202. The collector is electrically connected to the metallic mounting area. The transistors are particularly designed for switching applications in flash devices. Type Ordering code BD 487 Bd , K/W Junction to mounting area "thJC ¿10 ¿10 K/W 1796 B-13 419 S5C » - fl23SbQ5 QQQM37H QQQM37H S «SlEfi ... | OCR Scan |
4 pages, |
transistor D929 Q62702-D930 Q62702-D929 IBM 487 D487 BD488 BD PNP 80487 Q62702-D929 abstract |
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| Abstract: 2SC D - 0235^05 00Q447G 00Q447G 5 «SIEG N-Channel Junction Field-Effect Transistors SIEMENS AKTIEN6ESELLSCHAF 04470 " D T-V-ÏZ BF 256 A BF 256 B -BF 256 C BF 256 A, B, and C are N-channel junction field-effect transistors in plastic package similar to TO 92 (10 A 3 DIN 41868). They are particularly suitable , Ig 10 mA T; 150 °C Tstg -65 to 150 °C Î Ptat 300 mW flthJA ¿250 K/W1) ; 1) If the transistors , 256 B 1: /DS S = 6 to 8 mA, -VQS = 1.4 to 2.6 V 517 1894 B-13 This Material Copyrighted By Its ... | OCR Scan |
3 pages, |
BF256 A5168 f733 BF256C A5169 BF 256 BF266 00Q447G Q68000-A5168 Q62702-F413 Q68000-A5169 Q62702-F733 00Q447G abstract |
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| Abstract: Power Transistors 2SB1299 2SB1299 2SB1299 2SB1299 Silicon PNP Epitaxial Planar Type Power Amplifier Complementary Pair with 2SD1273 2SD1273 - Features • High DC current gain (hpF.) • Good linearity of DC current gain , 0.2A, f = 10MHz 30 MHz *hFE Classifications . Class Q P hFE 300-500 400-700 b^32-S2 GOlbgflfl b13 Panasonic -284_ This Material Copyrighted By Its Respective Manufacturer Power Transistors 2SB1299 2SB1299 Pc-Ta , ) Panasonic This Material Copyrighted By Its Respective Manufacturer Power Transistors 2SB1299 2SB1299 _ - ^32052 ... | OCR Scan |
3 pages, |
B13 transistors 2SB1299 2SD1273 2SB1299 abstract |
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| HF VDMOS RF POWER Transistor (1) VHF VDMOS RF POWER Transistor (4) Power gain(dB) 13 (1) 16 (1) 19 (1) 20 (1) 27 (1) Application www.datasheetarchive.com/files/philips/selectionguides/tables/41158_i.html |
Philips | 15/04/2003 | 14.78 Kb | HTML | 41158_i.html |
| LDMOS RF POWER Transistor (2) Power gain(dB) 13 (1) 14 (1) Application L-band Radar (2 Philips Semiconductors; Interactive Selectionguides of L-Band LDMOS Transistors Select the appropriate category in the drop-down selection boxes and click on 'Refine selection'. The number between brackets gives the number of products in each category www.datasheetarchive.com/files/philips/selectionguides/tables/42815_i.html |
Philips | 15/04/2003 | 10.21 Kb | HTML | 42815_i.html |
| LDMOS RF POWER Transistor (2) Power gain(dB) 13 (1) 14 (1) Application L-band Radar (2 www.datasheetarchive.com/files/philips/selectionguides/tables/41161_i.html |
Philips | 15/04/2003 | 10.2 Kb | HTML | 41161_i.html |
| Operating voltage (VDC) 28 Power gain (dB) 13 Operating voltage (VDC) 32 Power gain (dB) 13 Operating voltage (VDC) 12.5 Power gain (dB) 13 ) 80 Operating voltage (VDC) 28 Power gain (dB) 13 VHF VDMOS RF POWER Transistor Efficiency (%) 65 Frequency (MHz) 175 Load power (W) 60 www.datasheetarchive.com/files/philips/catalog/parametrics/16-v2.html |
Philips | 07/06/2005 | 113.34 Kb | HTML | 16-v2.html |
| 2211T1/D 2211T1/D 2211T1/D 2211T1/D (160.0kB) 13 100 Bias Resistor Transistors MUN Transistors 2N6497/D 2N6497/D 2N6497/D 2N6497/D (74.0kB) 13 100 High Voltage NPN Silicon Darlington Complementary Silicon Power Transistors 2N6035/D 2N6035/D 2N6035/D 2N6035/D (85.0kB) 13 100 Plastic Medium Power Silicon PNP Transistor BD438/D BD438/D BD438/D BD438/D (58.0kB) 13 100 Bipolar Transistors Document Title www.datasheetarchive.com/files/on-semiconductor/taxonomy/bipolartransistors.htm |
On Semiconductor | 28/09/2007 | 122.37 Kb | HTM | bipolartransistors.htm |
| MAX2681 MAX2681 MAX2681 MAX2681's 11.1dB NF: Total NF = filter NF + mixer NF = 2dB + 11.1dB = 13.1dB The the LNA's first transistor input stage. Noise figure (NF) serves as a figure of merit for transistor (the Giacoleto model-see Figure 2 ) helps in understanding how this noise is generated. The . Figure 2. This detailed npn-transistor model (the Giacoleto model) simplifies the analysis of base resistance (Rbb´) in a transistor is Vn(f) = 4kTRbb´, where Vn(f) equals the voltage www.datasheetarchive.com/files/maxim/0008/view_047.htm |
Maxim | 04/04/2001 | 22.14 Kb | HTM | view_047.htm |
| 300 150 appr. 2 12.2 11.8 12 BZX585-B13 single 200 300 150 appr. 2 13 RFS Chemical content BZX585-B13 9340 558 74115 week 52, 2002 Standard Marking Reel Pack, SMD SOD523 RFS Chemical content BZX585-B13 12 Spice model of BZX585-B13 Spice model of BZX585-B15 BZX585-B15 BZX585-B15 BZX585-B15 Spice model of BZX585-B2V4 BZX585-B2V4 BZX585-B2V4 BZX585-B2V4 Spice model of BZX . Medium Power Transistors and Rectifiers for Power Management Applications 2003-12-09 Parametrics www.datasheetarchive.com/files/philips/pip/bzx585_series_4.html |
Philips | 15/06/2005 | 64.97 Kb | HTML | bzx585_series_4.html |
| ) SOT143R (SC-61B) (13) SOT161A (2) SOT171A (2) SOT172A2 (1) SOT172D (1) SOT186A (3 Philips Semiconductors; Interactive Selectionguides of Transistors 1.0 GHz LDMOS (4) 1.0 GHz LDMOS Transistors (1) 1.8 - 2.0 GHz LDMOS (4) 1.8 - 2.0 GHz LDMOS Transistors (1) 100 V GPA TrenchMOS (36) 100 V HPA TrenchMOS (4) 12 - 300 V P MOS (4) 75 V TrenchPLUS (5) Avionics Bipolar (4) Avionics Bipolar Transistors (2 www.datasheetarchive.com/files/philips/selectionguides/tables/30928_i.html |
Philips | 15/04/2003 | 50.23 Kb | HTML | 30928_i.html |
| Category Single switching transistors fT min (MHz) 500 hFE max 120 hFE min 40 I C max (m Transistor wideband NPN up to 6 GHz f T (GHz) 4 G UM (dB) 15 G UM @ f1 (dB) 15 G UM @ f2 (d BUT11A BUT11A BUT11A BUT11A Category Power transistors for EHT I C (DC) (A) 5 I C (SAT) (A BUT11AX BUT11AX BUT11AX BUT11AX Category Power transistors for EHT I C (DC) (A) 5 I C (SAT) (A BUT18A BUT18A BUT18A BUT18A Category Power transistors for EHT I C (DC) (A) 6 I C (SAT) (A www.datasheetarchive.com/files/philips/catalog/parametrics/15.html |
Philips | 25/04/2003 | 325.82 Kb | HTML | 15.html |
| @ f2 1000 G UM @ f2(dB) 13.5 Noise FIGURE MAX(dB) 3.0@f2?2.7@f1 V o 500 Category Transistor @ f2(dB) 13.5 V o 1200 V CE (V) 18 POLARITY NPN Category Transistor wideband NPN up to 8 GHz @ f1(dB) 13.0 f T (GHz) 8.0 @ f1 1000.0 Category Transistor wideband NPN up to 8 GHz (dB) 13 ITO(dBm) 26 VO ²(mV) 275 Frequency(MHz) 1.9 @ f(MHz) 900 Category Transistor 1000.0 I C (A) 6.5 G UM @ f1(dB) 13.0 P tot (MW) 32 f T (GHz) 5.0 Category Transistor www.datasheetarchive.com/files/philips/catalog/parametrics/15-v1.html |
Philips | 21/01/2002 | 257.07 Kb | HTML | 15-v1.html |