NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: TIP31 TIP31 SERIES (TIP31/31 TIP31/31 A/31 B/31C) NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIP32/32A/32B/32C TIP32/32A/32B/32C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage TIP31 TIP31 Vobo 40 V TIP31A TIP31A 60 V TIP31B TIP31B 80 V TIP31C TIP31C 100 V Collector Emitter , 0.3 mA TIP31B/31C Vce=60V, Ib= 0 0.3 mA Collector Cutoff Current TIP31 TIP31 Ices Vce=40V, Veb=0 200 , (TIP31/31A/31B/31C) NPN EPITAXIAL SILICON TRANSISTOR DC CURRENT GAIN BASE-EMITTER SATURATION VOLTAGE ... | OCR Scan |
2 pages, |
TlP31C TIP31C TIP31B TIP31A TIP31 transistor tip31 TIP31/31 B/31C TIP32/32A/32B/32C TIP31 abstract |
|
|||
| Abstract: TIP32 TIP32 SERIES (TIP32/32A/32B/32C TIP32/32A/32B/32C) PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIP31/31 TIP31/31 A/31 B/31C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage : TIP32 TIP32 VcBO -40 V TIP32A TIP32A -60 V TIP32B TIP32B -80 V TIP32C TIP32C -100 V Collector Emitter Voltage : TIP32 TIP32 VcEO -40 V TIP32A TIP32A -60 V TIP32B TIP32B -80 V TIP32C TIP32C -100 V Emitter-Base Voltage Vebo -5 V Collector Current (DC) lc -3 A Collector Current (Pulse) lc -5 A Base Current Ib -3 A ... | OCR Scan |
2 pages, |
TIP31 PNP Transistor TIP32 applications tlp32c transistor P32 TIP32 TIP32A TIP32B TIP32C TIP328 T1P32B TIP32 PNP Transistor TIP32 Series TIP32/32A/32B/32C TIP31/31 TIP32 abstract |
|
|||
| Abstract: P8253 B21G charts. Appendix B INSTRUCTION The appendix B describes addressing in the F2MC®*-16LX -16LX series, and , .303 Appendix B Instructions . 309 B.1 Addressing .309 B.1.1 Effective address field .309 B.1.2 Addressing Details ... | Original |
395 pages, |
TO-92 4 bits microcontroller D74 2a display DA05 F2MC-16LX MB90580 MB90F584 MOV surge protection circuit diagram QFP-100 t04 68 3 pin diode DA05 display STRL 352 16-BIT F2MC-16LX abstract |
|
|||
| Abstract: charts. Appendix B INSTRUCTION The appendix B describes addressing in the F2MC®*-16LX -16LX series, and , .303 Appendix B Instructions . 309 B.1 Addressing .309 B.1.1 Effective address field .309 B.1.2 Addressing Details ... | Original |
394 pages, |
QFP-100 MB90580 F2MC-16LX car power amplifier 16-BIT F2MC-16LX abstract |
|
|||
| Abstract: 1 Q LQH31M/31C/31H, LQW18A/2BH/31H LQW18A/2BH/31H c d b c a 2.5min. a LQW2BH c d 4.5 1.75 1.0 1.2 LQW31H LQW31H b 1.5 LQH31M/31C/31H 3.0 1.1 0.8 , /31C/31H LQW31H LQW31H 220 200 180 0 10 20 30 Timesec. H60A H63A(JIS Z 3282 , LQH31M/31C 220 LQW2BH/31H LQW2BH/31H LQH31H LQH31H LQW18A LQW18A 200 180 0 10 20 30 40 50 60 , LQH31M/31C/31H LQW31H LQW31H LQH32M/32C LQH32M/32C LQH43M LQH43M(N) LQH43C LQH43C ... | Original |
3 pages, |
MR-8153RA H63A H60A -31H LQW18A LQH31M/31C/31H LQW18A/2BH/31H LQH31M/31C/31H abstract |
|
|||
| Abstract: /31A/31B/31C) Package Dimension TO-220 (B) �20 84 4.57�20 6.30�20 1.27�20 , TIP 31 series (TIP31/31A/31B/31C) TIP31/31A/31B/31C SEMIHOW REV.A0,Oct 2007 TIP 31 series (TIP31/31A/31B/31C) TIP31/31A/31B/31C Medium Power Linear Switching Applications - Complement , : TIP31B/31C SYMBOL Test Condition Min Max Unit VCEO(SUS) IC=30mA, IB=0 40 60 80 , Cycle2% SEMIHOW REV.A0,Oct 2007 TIP 31 series (TIP31/31A/31B/31C) Typical Characteristics ... | Original |
5 pages, |
-TIP31 tip 31 TIP31C TIP 31B TIP31A TIP 31c transistor TIP31 TIP 31 Transistor TIP 31a Transistor TIP31 PNP Transistor TIP31B transistor tip 31 darlington tip31 transistor TIP31 TIP31/31A/31B/31C TIP31/31A/31B/31C TIP31/31A/31B/31C abstract |
|
|||
| Abstract: /B/C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Sustaining Voltage , BDT32/A/B/C APPLICATIONS ·Designed for use in audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE BDT31 BDT31 120 BDT 31C 140 BDT31 BDT31 40 BDT 31A 60 BDT 31B 80 BDT 31C VEBO 100 BDT 31B VCEO 80 BDT , Junction Temperature 150 -65~150 B Tstg Storage Ttemperature Range THERMAL ... | Original |
2 pages, |
NPN Transistor VCEO 80V 100V BDT31C BDT31B BDT31A BDT31 transistor 31C BDT32/A/B/C BDT31 abstract |
|
|||
| Abstract: 2 = = = E = B2 3 B DETAIL "A" L4 0068772-B 4/5 MJD31B/31C - , MJD31B/31C MJD32B/32C MJD32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS s s s SGS-THOMSON PREFERRED , Voltage (IE = 0) 80 V CEO Collector-Emitter Voltage (I B = 0) 80 V EBO Emitter-Base , 150 o C 1/5 MJD31B/31C - MJD32B/32C MJD32B/32C THERMAL DATA R t hj-ca se R t hj- amb Thermal , Current (i B = 0) V CB = 60 V 50 uA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V ... | Original |
5 pages, |
MJD32C MJD32B MJD31C MJD31B complementary npn-pnp power transistors MJD31B/31C MJD32B/32C MJD31B/31C abstract |
|
|||
| Abstract: MJD31B/31C MJD32B/32C MJD32B/32C ® COMPLEMENTARY SILICON POWER TRANSISTORS s s s , (I E = 0) 80 100 V V CEO Collector-Emitter Voltage (I B = 0) 80 100 V V , MJD31B/31C - MJD32B/32C MJD32B/32C THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal , (V BE = 0) V CE = Max Rating 20 uA I CEO Collector Cut-off Current (I B = 0) V CE , Saturation Voltage IC = 3 A I B = 375 mA Base-Emitter Voltage IC = 3 A V CE = 4 V DC ... | Original |
5 pages, |
NPN Silicon Power Transistor DPAK MJD32C MJD32B MJD31C MJD31B complementary npn-pnp complementary npn-pnp power transistors MJD31B/31C MJD32B/32C MJD31B/31C abstract |
|
|||
| Abstract: designed so that it does not project beyond the chip coil electrode. LQH31M/31C/31H, LQW18A/2BH/31H LQW18A/2BH/31H Land Pattern Solder Resist c d b c a 2.5min. Series a LQW2BH LQW18A LQW18A c d 4.5 1.75 1.0 1.2 LQW31H LQW31H b 1.5 LQH31M/31C/31H 3.0 1.1 0.8 , Solder : H60A 280 Temperature (°C) 260 240 220 200 LQW2BH LQH31M/31C/31H LQW31H LQW31H , time. 240 220 200 180 0 LQW2BH/31H LQW2BH/31H LQH31H LQH31H LQW18A LQW18A 10 20 LQH31M/31C 30 40 ... | Original |
3 pages, |
LQW18A H63A H60A LQH3ER flux NF-3000 LQH31M/31C/31H LQW18A/2BH/31H LQH31M/31C/31H abstract |
|
|||
| Abstract: 14E O §711.4142 000771t, 1 | (TIP31/31 TIP31/31 A/31 B/31 C) NPN EXITAXIAL SILICON TRANSISTOR SAMSUNG SEMICONDUCTOR INC TIP3T SEHIHE5 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to T1P32/32A/32B/32C T1P32/32A/32B/32C ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit Collector-Base Voltage : TIP31 TIP31 VcBO 40 V : .TIP31A TIP31A 60 V : TIP31B TIP31B 80 V : TIP31C TIP31C 100 V Collector-Emitter Voltage : TIP31 TIP31 VcEO 40 V : TIP31A TIP31A 60 • Mi- : TIP31B TIP31B 80 V : TIP31C TIP31C 100 V Emitter-Base Voltage Veb ... | OCR Scan |
6 pages, |
TS 4142 T1P32 T1P32B TIP31 TIP31A TIP31B TIP31C TP32A NPN Transistor TO220 VCEO 80V 100V T1P-32C SAL 41B transistor tip31 TIP328 T1P32C t1p41 TIP31/31 T1P32/32A/32B/32C TIP31/31 abstract |
|
|||
| Abstract: EHV SERIES SMD TYPE Reflow Soldering is available Life 2000 hours at 105 Available For High Density Mounting Characteristics 6.3 to 450 VDC 0.1 to 6800uF -40 to +105 +20% -20% (at 20, 120Hz) SIZE A~F: I0.01CV or 3uA, whichever is greater 2 minutes after Rated Voltage applied SIZE G~I(6.3V~100V): I0.03CV whichever is greater 1 minutes after Rated Voltage applied SIZE G~I (160V~450V): I0.04CV +100Ua whichever is greater 1 minutes after Rated Voltage applied 160~ 400~ Voltage (V) 6 ... | Original |
2 pages, |
datasheet abstract |
|
|||
| Abstract: MOS LSI TMS 3404 JC, TMS 3404 NC DUAL 512-BIT 512-BIT DYNAMIC SHIFT REGISTER features description Two-phase dynamic logic 5-MHz shift rate Low power - 0.1 mW/bit at 1 MHz Power supplies - +5 V, -12 V Single-ended output TTL compatible - without external components Low-threshold technology B 31 C » S â- i â- The TMS 3404 JC/NC consists of two high-speed 512-bit dynamic shift registers. The bits are implemented by a ratio-less two-phase design to minimize power consumption. Inputs and outputs are ... | OCR Scan |
5 pages, |
75322 512-BIT 512-BIT abstract |
|
|||
| Abstract: IDS-5 Amphenol ® Amphe-PPM Quick Disconnect Connectors The Amphe-PPM is a rapid mate, push/pull connector which provides positive mating in limited space and ease of use. The design features of the Amphe-PPM allow consumers to save cost in space savings and in installation. Amphe-PPM, the high performance signal and power interconnection solution, is ideally suited to many commercial and industrial applications including, but not limited to: · Medical Equipment · Instrumentation/Test & ... | Original |
2 pages, |
datasheet abstract |
|
|||
| Abstract: & '( ) -, & #. $ * & + ) ,( (,! % # $ ! ! / 0 / !" # ! " " ! # !" $ % 1! 1! * * ' ' $ 2 $ * 3" 113 1 " 113 !- $ 4 $ $ $ $ * ' 1! * $ ( 3" 113 !$ + # 4" 11< !- ' - 6 7! , ' 8 1!7 + 5 ; $ 4 91 41: 1 11 611 94 94: 4 $ + 5 - $ + 5 - $ 4"6 !" # ! " " ! # !" $ % 5 5 5 ; ' 7 ) + 7 - * - 4 6 9 3 < 1 $ ... | Original |
21 pages, |
B611C B441C B411C datasheet abstract |
|
|||
| Abstract: DP0150ALP4 DP0150ALP4 / DP0150BLP4 DP0150BLP4 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features Mechanical Data · · · · · · · · · Epitaxial Die Construction Ultra-Small Leadless Surface Mount Package Ultra-low Profile (0.40mm max) Complementary NPN Type Available (DN0150ALP4 DN0150ALP4 / DN0150BLP4 DN0150BLP4) Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q 101 Standards for High Reliability ... | Original |
4 pages, |
J-STD-020D DP0150BLP4 DFN1006H4-3 marking code t5 DP0150ALP4 DP0150ALP4 abstract |
|
|||
| Abstract: DN0150ALP4 DN0150ALP4 / DN0150BLP4 DN0150BLP4 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features Mechanical Data · · · · · · · · · Epitaxial Die Construction Ultra-Small Leadless Surface Mount Package Ultra Low Profile (0.4mm max) Complementary PNP Type Available (DP0150ALP4 DP0150ALP4 / DP0150BLP4 DP0150BLP4) Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q 101 Standards for High Reliability ... | Original |
4 pages, |
J-STD-020D DP0150BLP4 DN0150ADJ DFN1006H4-3 "MARKING CODE T3" DN0150ALP4 DN0150BLP4 DN0150ALP4 abstract |
|
|||
| Abstract: CHA2063a 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063a is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25um gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form or in an hermetic leadless ceramic package. Main Features Pin Out ¦ Broad band performance 7-13GHz ¦ 2.0dB noise figure, 8-13GHz ¦ 19dB gain ¦ Low ... | Original |
10 pages, |
datasheet abstract |
|
|||
| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
|||||
| C31 C32 C33 = A11 B11Ã-( ) A12 B21Ã-( ) A13 B31Ã-( ) C11=+ + A11 B12Ã-( ) A12 B22Ã-( ) A13 B32Ã-( ) C12=+ + A11 B13Ã-( ) A12 B23Ã-( ) A13 B33Ã-( ) C13=+ + A21 B11Ã-( ) A22 B21Ã-( ) A23 B31Ã-( ) C21=+ + A21 B12 Ã-( ) A33 B31Ã-( ) C31=+ + A31 B12Ã-( ) A32 B22Ã-( ) A33 B32Ã-( ) C32=+ + A31 B13Ã-( ) A32 B23Ã-( ) A33 B33 32 A33 B11 B21 B31 Ã- C11 C21 C31 = A11 B11Ã-( ) A12 B21Ã-( ) A33 B31Ã-( ) C11=+ + A21 B11Ã-( ) A22 B21Ã-( ) A33 B31Ã-( ) C21=+ + A31 B11Ã-( ) A32 B21Ã-( ) A33 B31Ã-( ) C31=+ + X A KA1Ã-( ) B KB1Ã-( ) C KC1 www.datasheetarchive.com/download/23745346-995959ZC/xapp284.zip (xapp284_03.pdf) |
Xilinx | 24/07/2002 | 59.12 Kb | ZIP | xapp284.zip |
| ST | COMPLEMENTARY SILICON POWER TRANSISTORS MJD31B MJD31C MJD32B MJD32C MJD32C MJD32C MJD32C Format and Raw Text Format MJD31B/31C MJD32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS n ST n The MJD31B and MJD31C and the MJD32B and MJD32C MJD32C MJD32C MJD32C form complementary NPN-PNP pairs. They are MJD31C/32C V CBO Collector-Base Voltage (I E = 0) 80 100 V V CEO Collector-Emitter Voltage (I B = 0 /32B for MJD31C/32C 80 100 v V V CE(sat) * Collector-Emitter Saturation Voltage I C = 3 A I B www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3543-v1.htm |
STMicroelectronics | 02/04/1999 | 5 Kb | HTM | 3543-v1.htm |
| COMPLEMENTARY SILICON POWER TRANSISTORS MJD31B MJD31C MJD32B MJD32C MJD32C MJD32C MJD32C Document Format 3543 06/05/1999 5 Raw Text Format MJD31B/31C MJD32B The MJD31B and MJD31C and the MJD32B and MJD32C MJD32C MJD32C MJD32C form complementary NPN-PNP pairs. They are Unit NPN MJD31B MJD31C PNP MJD32B MJD32C MJD32C MJD32C MJD32C V CBO Collector-Base Voltage (I E = 0) 80 100 V V CEO /32B for MJD31C/32C 80 100 V V V CE(sat) * Collector-Emitter Saturation Voltage I C = 3 A www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3543.htm |
STMicroelectronics | 20/10/2000 | 7.15 Kb | HTM | 3543.htm |
| ST | COMPLEMENTARY SILICON POWER TRANSISTORS MJD31B MJD31C MJD32B MJD32C MJD32C MJD32C MJD32C Format MJD31B/31C MJD32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS n STMicroelectronics The MJD31B and MJD31C and the MJD32B and MJD32C MJD32C MJD32C MJD32C form complementary NPN-PNP pairs. They are MJD31B MJD31C PNP MJD32B MJD32C MJD32C MJD32C MJD32C V CBO Collector-Base Voltage (I E = 0) 80 100 V V CEO Collector .1 mA V CEO(sus) Collector-Emitter Sustaining Voltage I C = 30 mA for MJD31B/32B for MJD31C/32C 80 100 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3543-v2.htm |
STMicroelectronics | 14/06/1999 | 5 Kb | HTM | 3543-v2.htm |
| Datasheet COMPLEMENTARY SILICON POWER TRANSISTORS MJD31B MJD31C MJD32B /05/1999 5 Raw Text Format MJD31B/31C MJD32B/32C The MJD31B and MJD31C and the MJD32B and MJD32C MJD32C MJD32C MJD32C form complementary NPN-PNP pairs. They are Value Unit NPN MJD31B MJD31C PNP MJD32B MJD32C MJD32C MJD32C MJD32C V CBO Collector-Base Voltage (I E = 0) 80 31B/32B for MJD31C/32C 80 100 V V V CE(sat) * Collector-Emitter Saturation www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3543-v3.htm |
STMicroelectronics | 25/05/2000 | 6.85 Kb | HTM | 3543-v3.htm |
| S009000042757A7A657274 S009000042757A7A657274 S009000042757A7A657274 S009000042757A7A657274 S113C00041F1E206054540F2E151200A4031C046C3 S113C02031C00050CA0A4031C00050CA0A4031C071 S113C0300050CA0A4031C0005004004031C00050D2 S109C04021C01C504A203F S109C04021C01C504A203F S109C04021C01C504A203F S109C04021C01C504A203F S106FFFD00C0B28B S113C0C1C00031C08BE40080E40000E7C00031C04F S113C0D18BE40080E4000031C06BE40080E40000E4 S113C07BC0C99800FD0683C0C0D8FCFAD9FCF720D0 S113C08B www.datasheetarchive.com/download/95429283-118631ZC/89480_buzzer-v10.zip (Buzzer.mhx) |
Fujitsu | 01/02/2012 | 21.08 Kb | ZIP | 89480_buzzer-v10.zip |
| S00B000054656D706C617465B8 S106FFFD00C0003D S106FFFD00C0003D S106FFFD00C0003D S106FFFD00C0003D S1044000FFBC S1044000FFBC S1044000FFBC S1044000FFBC S113C000E400C0E170E400BF637170E40030737158 S113C010AC06A506AE06AF0605066410FC0321C0F7 S113C02018850730E7C000E40080E4000031C0ABAD S113C030E7C000E40080E4000031C0ABE40080E429 S107C0505421C05162 S107C0505421C05162 S107C0505421C05162 S107C0505421C05162 S DFF854C DFF854C DFF854C DFF854C S113C0707EFF20404340F34008100940800021C067 S10EC0807D5049104850E350435030FD S10EC0807D5049104850E350435030FD S10EC0807D5049104850E350435030FD S10EC0807D5049104850E350435030FD S113C0AB41811003100348104943E2F S113C0AB41811003100348104943E2F S113C0AB41811003100348104943E2F S113C0AB41811003100348104943E2F www.datasheetarchive.com/download/4687417-119162ZC/951xx_template-v11.zip (Template.mhx) |
Fujitsu | 01/02/2012 | 42.22 Kb | ZIP | 951xx_template-v11.zip |
| 94ae613d1a20e30051a 427c310c1c1f6b42fcdff44f * Simulator: PSPICE * EVM Order Number: * EVM Users Guide: * Datasheet: SLVSAG6B - SEPTEMBER 2010 . * * * source TLV70212 TLV70212 TLV70212 TLV70212 *$ .SUBCKT TLV70212 TLV70212 TLV70212 TLV70212 IN EN GND OUT $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0 www.datasheetarchive.com/download/17198730-922771ZC/tlv70212_pspice_transient_model.zip (tlv70212.lib) |
Texas Instruments | 11/08/2011 | 32.39 Kb | ZIP | tlv70212_pspice_transient_model.zip |
| bit CST2 in the corresponding word in the UPM" < > corresponding word in the UPM" < " B31c:50,5,13,"CLKOUT Rising Edge to #CS _Date,"Revision 1.0 - July 1997 - Chronology Corporation" B1,20,"CLKOUT Period." B2,"Clock pulse width low." B3,"Clock pulse width high." B4,"CLKOUT rise time." B5,"CLKOUT fall time." < to A(0:31), RD/#WR, #BURST, D(0 www.datasheetarchive.com/download/64581549-484839ZC/timing86.zip (50_above.tl) |
Motorola | 04/08/1998 | 168 Kb | ZIP | timing86.zip |
| :100170001F1A1F191E191D191A9A27C11F1A1F1994 : :100190001A9C3BC11F 100190001A9C3BC11F 100190001A9C3BC11F 100190001A9C3BC11F :0200000040C0FE 0200000040C0FE 0200000040C0FE 0200000040C0FE :0C0060008E679E250000215355180000FB 0C0060008E679E250000215355180000FB 0C0060008E679E250000215355180000FB 0C0060008E679E250000215355180000FB : : : : > : :1000D00035A036A234290200048D0484204021403A :1000E0002240234024402540264027402840207AB3 : www.datasheetarchive.com/download/7305211-392873ZC/00543.zip (TONE.HEX) |
Microchip | 05/03/1998 | 21.38 Kb | ZIP | 00543.zip |