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ISL9014AIRBLZ Intersil Corporation Dual LDO with Low Noise, Low IQ, and High PSRR; DFN10; Temp Range: -40° to 85°C visit Intersil Buy
ISL9014AIRFJZ Intersil Corporation Dual LDO with Low Noise, Low IQ, and High PSRR; DFN10; Temp Range: -40° to 85°C visit Intersil Buy
ISL9014AIRJMZ Intersil Corporation Dual LDO with Low Noise, Low IQ, and High PSRR; DFN10; Temp Range: -40° to 85°C visit Intersil Buy
ISL9014AIRKJZ Intersil Corporation Dual LDO with Low Noise, Low IQ, and High PSRR; DFN10; Temp Range: -40° to 85°C visit Intersil Buy
ISL9014AIRMGZ Intersil Corporation Dual LDO with Low Noise, Low IQ, and High PSRR; DFN10; Temp Range: -40° to 85°C visit Intersil Buy
ISL9014AIRNJZ Intersil Corporation Dual LDO with Low Noise, Low IQ, and High PSRR; DFN10; Temp Range: -40° to 85°C visit Intersil Buy

B 9014 npn

Catalog Datasheet MFG & Type PDF Document Tags

B 9014 npn

Abstract: C 9014 transistor Lead Free Plating 9014-x-T92-B 9014L-x-T92-B 9014-x-T92-K 9014L-x-T92-K Package www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd TO-92 TO-92 Pin Assignment 1 2 3 E B C E B C Packing Tape Box Bulk 1 of 3 QW-R201-031.B 9014 NPN SILICON TRANSISTOR , UNISONIC TECHNOLOGIES CO., LTD 9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW , TECHNOLOGIES CO., LTD www.unisonic.com.tw C 200-600 D 400-1000 2 of 3 QW-R201-031.B 9014
Unisonic Technologies
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9014L B 9014 npn C 9014 transistor 9014 transistor data sheet transistor 9014 npn data sheet transistor 9014 TRANSISTOR c 9014 9014L-

CP1005

Abstract: 9011 9012 9013 9014 9018 IF AM/FM IF KM 9011/8 KM901I/8 KM90II/8 -î^-àm/I AF Amp. J KM 9014 Or KM90I5 AF A,np 2 KM90I4 KM9015 Oulpul KM90I:.' SP. -Q KM90i:i type polarity applications case KM 9011 NPN AM/FM IF, AM CONVERTER to-92a à EBC KM 9012 PNP AUDIO POWER OUTPUT KM 9013 NPN AUDIO POWER OUTPUT KM 9014 NPN AUDIO DRIVER KM 9015 PNP AUDIO DRIVER KM 9016 NPN FM RF KM 9018 NPN AM/FM IF, FM CONVERTER , (VI (VI (VI I m W ) min max (nA) max VCB (v> lv) «VP max ic (mA) VCE (v) (v) typ max
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CP1005 9011 9012 9013 9014 9018 transistor 9014 C npn 9011 NPN transistor 9011 transistor 9016 KM90II

transistor c 9018

Abstract: Transistor CL 100 TYPE POLARITY APPLICATIONS CASE CL 9011 NPN AM/FM IF, AM CONVERTER T0-92B CL 9012 PNP AUDIO POWER OUTPUT CL 9013 NPN AUDIO POWER OUTPUT i CL 9014 NPN AUDIO DRIVER CL 9015 PNP AUDIO DRIVER CL 9016 NPN FM RF E Cl loo CL 9018 NPN AM/FM IF, FM CONVERTER V N«â'"â'¢ J MICRO ELECTRONICS LTD , (dB) tYP InA) max VCB (v) (v) typ max ic vCE (mA) (v) (v) typ max 'c 'B (mA) (mA) (MHz) min typ , 9013 25 20 5 500 64 350 500 18 0.7 085 10 1 02 0.6 250 25 CL 9014 25 20 5 500 60 1000 50 18 0 63
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transistor c 9018 Transistor CL 100 transistor 9013 NPN audio output transistor 9014 NPN 9016 transistor V. 9014 c

BR 9014 transistor

Abstract: BR 9014 ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As , current V 0.5 ST 9014 ST 9014 3 10 VCE=5V I C/I B =20 5 4 3 0.4 o 100 C , Kong Stock Exchange, Stock Code: 724) Dated : 07/12/2002 ST 9014 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Current Gain Group A hFE 60 - 150 - B hFE
Semtech Electronics
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BR 9014 transistor BR 9014 TRANSISTOR 9014 ST 9014 C BR 9014 C 9014

9011 9012 9013 9014 9018

Abstract: 9011 NPN transistor RADIO TRANSISTOR KIT Oulput TYPE POLARITY APPLICATIONS CASE CL 9011 NPN AM/FM IF, AM CONVERTER T0-92B CL 9012 PNP AUDIO POWER OUTPUT CL 9013 NPN AUDIO POWER OUTPUT i CL 9014 NPN AUDIO DRIVER CL 9015 PNP AUDIO DRIVER CL 9016 NPN FM RF E Cl â'ž 0 o CL 9018 NPN AM/FM IF, FM CONVERTER C , CdB) tYP InA) max VCB (v) (v) typ max ic vCE (mA) (v) (v) typ max 'c 'B (mA) (mA) (MHz) min typ , CL 9013 25 20 5 500 64 350 500 18 0.7 085 10 1 02 0.6 250 25 CL 9014 25 20 5 500 60 1000 50 18
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npn 9016 transistor F 9016 transistor 9018 transistor pnp transistor 9015 NPN 9013 transistor 9015 c CL9000

BR 9014

Abstract: BR 9014 c versus collector current V 0.5 S 9014 S 9014 3 10 VCE=5V I C/I B =20 5 4 3 , TO-92 Plastic-Encapsulate Transistors S9014 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER , ) Rank Range A B C D 60-150 100-300 200-600 400-1000 S9014 Admissible power , are kept at ambient temperature at a distance of 2 mm from case mW 500 mA 2 10 S 9014 S 9014 VCE=5V 5 4 3 400 2 10 P tot 300 IC Tamb=100 o C 5 4 o 25 C
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transistors BR 9014
Abstract: UNISONIC TECHNOLOGIES CO., LTD 9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW , © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R201-031.C 9014  NPN SILICON TRANSISTOR , : Emitter B: Base C: Collector  TO-92 Pin Assignment 1 2 3 E B C E B C Packing , 10 V V V pF MHz dB CLASSIFICATION OF hFE RANK RANGE A 60-150 B 100-300 , -031.C 9014 TYPICAL CHARACTERISTICS Static Characteristic 70 60 50 IB=160µA IB=140µA IB=120µA Unisonic Technologies
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9014G-

9014 ch

Abstract: transistor npn c 9014 Vi4». ¡;-i\> V IliÌ Vi- i m B bJ ;7*y V7l_l IlkaW AM. FM RADIO TRANSISTOR KIT SELECTION GUIDE FOR AM / FM RADIO TRANSISTOR KIT TYPE POLARITY APPLICATIONS CASE KM 9011 NPN AM/FM IF, AM CONVERTER TO-92A à E6C KM 9012 PNP AUDIO POWER OUTPUT KM 9013 NPN AUDIO POWER OUTPUT KM 9014 NPN AUDIO DRIVER KM 901S PNP AUDIO DRIVER KM 9016 NPN FM RF KM 9018 NPN AM/FM IF, FM CONVERTER MICRO , - - 1 10 lC CmA) KM 9014 KM 9015 100 HFE 80 60 40 20 0
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9014 ch transistor npn c 9014 100-10L 9018 Transistor-9013 h 9011

BR 9014

Abstract: 9014 ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As , versus collector current V 0.5 ST 9014 ST 9014 3 10 VCE=5V I C/I B =20 5 4 3 , ) ® Dated : 07/12/2002 ST 9014 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Current Gain Group A hFE 60 - 150 - B hFE 100 - 300 - C hFE 200
Semtech Electronics
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st 9014 9014 C BR 9014 C TRANSISTOR C 9014 H S 9014 npn ts 9014

BR 9014

Abstract: BR 9014 transistor ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As , voltage versus collector current V 0.5 ST 9014 ST 9014 3 10 VCE=5V I C/I B =20 5 , ) R Dated : 07/12/2002 ST 9014 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Current Gain Group A hFE 60 - 150 - B hFE 100 - 300 - C
Semtech Electronics
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transistor 9014 c st9014 c 9014 c 024 c 9014

transistor 9014 C npn

Abstract: V. 9014 c HN 9014 NPN Silicon Expitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C, and ] ^^ D, according to its DC current gain , .0o.55 TRANSISTOR PACKAGE OUTLINE" on page 80 for the 2.5 available pin options. â'"^ E ;0 0 0 C B TO-92 Plastic , ® SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of HQNEV TECHNOLOGY LTD. ) HN 9014 Characteristics , Group A B C D hFE hFE hFE hFE 60 100 200 400 - 150 300 600 1000 - Collector Saturation Voltage at lc =
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V 9014 c 9014c C 9014 transistors c 9014 g c 625 9014 D D 9014 C TRANSISTOR

BR 9014

Abstract: BR 9014 transistor ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As , current V 0.5 ST 9014 ST 9014 3 10 VCE=5V I C/I B =20 5 4 3 0.4 o 100 C , Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 ST 9014 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Current Gain Group A hFE 60 - 150 - B hFE
Semtech Electronics
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s 9014 transistor

transistor npn c 9014

Abstract: 9014 NPN UTC 9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. (450mW) *Excellent hFE linearity. *Complementary to UTC 9015 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise , . UNIT V V V nA nA V V V pF MHz dB 1 QW-R201-031,A UTC 9014 NPN EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF hFE RANK RANGE UTC A 60-150 B 100-300 C 200-600 UNISONIC
Unisonic Technologies
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9014 NPN

utc 9014

Abstract: C 9014 transistor UTC 9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. (450mW) *Excellent hFE linearity. *Complementary to UTC 9015 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise , V V nA nA V V V pF MHz dB 1 QW-R201-031,A UTC 9014 NPN EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF hFE RANK RANGE A 60-150 B 100-300 C 200-600 D 400-1000
Unisonic Technologies
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utc 9014 9014 current rating UTC9014 9014 transistor specification low noise transistor 9014 datasheet transistor 9014

Z427

Abstract: FL 9014 Hex Buffer (OC/15 V) Hex B uffer (OC/30 V) Quad 2-Input Quad 2-Input (OC) Quad 2-2-3-3 Input Triple 3 , /NOR Quad 2-Input OR/NOR Quad 2-Input - - 9014 - - 54LS/74LS86 54LS/74LS136 - - 54LS/74LS386 54 , NC llniY3 GND LlT L il LU [Ü EJ L£I LzJ GNO *npn D23 54S/74S135 ¿J li. ) -!a> L ir > LH' L iT u n U UT LETET Z& GND D22 9014 D24 9386, 74LS266 Vcc Vcc Vcc
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Z427 FL 9014 TTL 7409 74LS32 74ls86 TTL 7486 54S/74S 54H/74H ILS/74LS 54LS/74LS02 54S/74S02 54LS/74LS27

transistor 9014

Abstract: BR 9014 NPN SILICON TRANSISTOR 9014 TO 92 FEATURES 1.EMITTER Power dissipation PCM : 0.4 W Tamb=25 Collector current A ICM : 0.1 Collector-base voltage V V(BR)CBO : 50 ELECTRICAL CHARACTERISTICS Parameter 2.BASE 1 2 3 3.COLLECTOR Tamb=25 unless otherwise specified Symbol Test conditions Collector-base breakdown voltage V(BR)CBO Ic= 100 Collector-emitter , 60 1000 150 MHz f =30MHz CLASSIFICATION OF HFE(1) Rank A B C D Range
Wing Shing Computer Components
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9014 to-92

transistor 9014

Abstract: H9014 NPN SILICON TRANSISTOR 9014 4 100mm C035BJ-00 240±20µm 350×350µm 2 B 12150µm 2E 16180µm 2 SS9014H9014 TO-92 Ta=25 PC-.450mW VCBO-.50V VCEO-.45V VEBO-.5V Ta=25 TO-92 ICBO IEBO hFE VCE(sat
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H9014 h9014 datasheet SS9014 30VIE

BR 9014

Abstract: BR 9014 transistor ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute , - B hFE 100 - 300 - C hFE 200 - 600 - D hFE 400 -
Semtech Electronics
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BR 9015 9015 PNP transistor c 9015 transistors BR 9015 TS 9015 C 9015 transistor

fu 9014

Abstract: GSMBT9014 ISSUED DATE :2004/12/20 REVISED DATE : GSM BT 9014 NPN E PITAX I AL T RANSI STOR Description The GSMBT9014 is designed for general purpose amplifier applications. Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Symbol
GTM
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fu 9014

br 9015

Abstract: pnp transistor 9015 ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute , . Typ. Max. Unit Current Gain Group A hFE 60 - 150 - B hFE 100 -
Semtech Electronics
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9015 transistor transistor 9015 BR 9015 C datasheet transistor 9015 pin configuration NPN transistor 9014
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