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Part Manufacturer Description Datasheet BUY
LTC1446LIS8 Linear Technology LTC1446 - Dual 12-Bit Rail-to-Rail Micropower DACs in SO-8; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC1446CS8#TRPBF Linear Technology LTC1446 - Dual 12-Bit Rail-to-Rail Micropower DACs in SO-8; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC1446CS8 Linear Technology LTC1446 - Dual 12-Bit Rail-to-Rail Micropower DACs in SO-8; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC1446IS8#TRPBF Linear Technology LTC1446 - Dual 12-Bit Rail-to-Rail Micropower DACs in SO-8; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC1446IS8#PBF Linear Technology LTC1446 - Dual 12-Bit Rail-to-Rail Micropower DACs in SO-8; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC1446IN8#PBF Linear Technology LTC1446 - Dual 12-Bit Rail-to-Rail Micropower DACs in SO-8; Package: PDIP; Pins: 8; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

B 1446 transistor

Catalog Datasheet MFG & Type PDF Document Tags

schematic diagram CORDLESS DRILL

Abstract: MC2833P , respectively, in the 76 and 144.6 MHz transmitters. The Q1 output transistor is a linear amplifier in the 49.7 , Power Output to 60 MHz Using Direct RF Output + 10 dBm Power Output Attainable Using On­Chip Transistor , ) AUXILIARY TRANSISTOR STATIC CHARACTERISTICS Characteristics Symbol Min Typ Max Unit , ) AUXILIARY TRANSISTOR DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (VCE = 3.0 V) Current Gain , 68 p 10 p 68 p 470 p 12 p 20 p 120 p 144.6 MHz 12.05 5.6 0.15 0.10 150 220 k 47 p 10 p
Motorola
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Abstract: A ≠0V B: VOUT A ≠2.048V C: VOUT A ≠4.095V 1446/46L F02 9 LTC1446/LTC1446L U , Allows Direct Optocoupler Interface Low Cost The LTC ®1446/LTC1446L are dual 12 , -BIT DAC B µP 0.5 0.3 â'" 1 CLK 3 CS/LD 24-BIT SHIFT REG AND DAC LATCH RAIL-TO-RAIL VOLTAGE OUTPUT + 12-BIT DAC A 0.4 VOUT B 8 VOUT A 5 DNL ERROR (LSB) 2 DIN , 1024 1536 2048 2560 3072 3584 4095 CODE 1446/46L G13 GND 6 1446/1446L TA01 1 LTC1446 Linear Technology
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LTC1446L 1446/LTC1446L LTC1451 LTC1452 LTC1453 LTC1454/LTC1454L

8-lead plastic so

Abstract: LTC1446 C ­4.096 ­8.190 A: VOUT A 0V B: VOUT A 2.048V C: VOUT A 4.095V 1446/46L F02 9 , Allows Direct Optocoupler Interface Low Cost The LTC ®1446/LTC1446L are dual 12 , VOUT A 5 DNL ERROR (LSB) ­ 1 CLK 3 CS/LD 0.4 0.3 12-BIT DAC B µP 0.5 VOUT B 8 , 2560 3072 3584 4095 CODE 1446/46L G13 GND 6 1446/1446L TA01 1 LTC1446/LTC1446L W W , .­40°C to 85°C VOUT A /VOUT B . ­0.5V to VCC + 0.5V Maximum Junction
Linear Technology
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8-lead plastic so 1446l LTC1454 LTC1454L LTC1456 LTC1458/LTC1458L LTC1458 LTC1458L

1446

Abstract: B 1446 transistor SO-8 May 1996 U DESCRIPTIO FEATURES s s s s s s s s s s ® The LTC 1446/1446L , Nonlinearity vs Input Code 2 DIN 0.5 + 12-BIT DAC B µP 0.4 VOUTB ­ 1 CLK 3 CS/LD 24 , 1536 2048 2560 3072 3584 4095 CODE POWER-ON RESET 1446/46L G13 6 1446/1446L TA01 , 100 0.1 1 10 LOAD CURRENT (mA) 1446/46L G01 VCC = 3V 660 650 VCC = 2.7V 640 , 5 25 45 65 85 105 125 TEMPERATURE (°C) 1446/46L G03 SUPPLY CURRENT (mA) SUPPLY CURRENT (mA
Linear Technology
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1446 B 1446 transistor LTC1446CS8 1446/1446L LTC1257

diode MARKING CODE 930

Abstract: quad 74HC04 NOT GATE datasheet s s s s s s s s s s s The LTC®1446/LTC1446L are dual 12-bit digital-to-analog , -BIT DAC B µP 0.5 VOUT B 8 0.2 0.1 0 ­0.1 ­0.2 ­0.3 ­0.4 ­ ­0.5 4 DOUT 0 POWER-ON RESET 512 1024 1536 2048 2560 3072 3584 4095 CODE 1446/46L G13 GND 6 1446/1446L TA01 , .­40°C to 85°C VOUT A /VOUT B . ­0.5V to VCC + 0.5V Maximum Junction , NUMBER TOP VIEW CLK 1 8 VOUT B DIN 2 7 VCC CS/LD 3 6 GND DOUT 4 5
Linear Technology
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diode MARKING CODE 930 quad 74HC04 NOT GATE datasheet B11a optocoupler 2560

transistor 301

Abstract: flyback transformer High Voltage Photoflash Capacitor Charger · Designed for use with PNP or NPN Transistor · Operating Temperature : -40°C to +85°C · UL 94V-0 Recognized Components · UL 1446 Class B Insulation System · Very Low Core Loss · Isolation : 500 Vrms Electrical Parameters @ 25° C PCA Part Number Transistor Design , 22.3 22.3 DCR ( Typ.) Pri. .045 .045 Sec.1 301 301 A B Schematic · N : Not Required/No Connection · , .079 (2.00) Side Marking : .012 PCA EPC3225G-X(.300) D.C. .193 (4.90) D2 1.5V + R Schematic B
PCA Electronics
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transistor 301 flyback transformer EPC3225G-1 EPC3225G-2 CSC3225G-X

B 1446 transistor

Abstract: flyback layout High Voltage Photoflash Capacitor Charger · Designed for use with PNP or NPN Transistor · Operating Temperature : -40°C to +85°C · UL 94V-0 Recognized Components · UL 1446 Class B Insulation System · Very , -1 Voltage (Vdc) Transistor Design PNP or NPN V in EPC3225G-2 320 1.5 Primary OCL @ , Pri. Sec.1 1:240:2.4 22.3 .045 301 A 1:240:N 22.3 .045 301 B , .008 (.203) Schematic B 1 Pri. 3 8 Sec.1 7 Pad Layout .079 (2.00) .067 (1.70
PCA Electronics
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flyback layout flyback transformer pin connections AMP320 marking 012 10 pin flyback transformer schematics EPC3225

TRANSISTOR ML6

Abstract: S B ^ l 0031777 fiSl * A P X NPN 6 GHz wideband transistor BFQ270 , wideband transistor ^ BFQ270 N FEATURES AUER PHILIPS/DISCRETE h^Z T > PINNING PIN â , emitter 4 t s \ , 3 ) 1. . DESCRIPTION Silicon NPN transistor mounted in a , base. 2 M C6 B 89 Top view F ig ,1 S O T 1 7 2 A 1 . It is primarily intended for use , ^31 0031773 10b H A P X Philips Semiconductors Product specification NPN 6 GHz wideband transistor
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TRANSISTOR ML6 53T31
Abstract: SIEMENS NPN Silicon RF Transistor BFS17W >For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Type B F S 17W Marking Ordering Code M Cs Q62702-F1645 Pin Configuration 1 =B ro il m 3 =C Package SOT-323 Maximum Ratings of any single Transistor Parameter , Characteristics of any single Transistor Collector-emitter breakdown voltage /c = 1 mA, /B = 0 Collector-base , , /b = 1 mA ^CEsat h fE kBO Iq b o ^(BR)CEO BFS17W Values typ. max. Unit V 15 pA 20 20 -
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CQ 523

Abstract: cq 531 Ordering number: EN5433 _FC157 NPN Epitaxial Planar Silicon Composite Transistor , each individual transistor. Marking: 157 Electrical Connection Package Dimensions 2067A (unit : mm , * Ls .1 10 5 ì 10 2 £ 0 1 o a -T3 O £ â Â»i T3 bq B â'¢a o o , 11.573 144.6 0.035 71.3 0.885 -18.7 400 0.540 -64.0 8.744 122.0 0.058 63.0 0.731 -27.7 600 0.400 -83.2 , 144.6 0.102 65.7 0.926 -21.1 600 0.780 -56.2 2.929 128.8 0.138 56.2 0.858 -29.5 800 0.699 -72.0 2.656
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2SC5245 CQ 523 cq 531 mc 5357 Z0 607 transistor but 607 NPN/CQ 523

TRANSISTOR ML6

Abstract: TRANSISTOR ML5 transistor BFQ270 ^N AMER PHILIPS/DISCRETE b^E » FEATURES â'¢ High power gain â'¢ Emitter-ballasting , Silicon NPN transistor mounted in a 4-lead dual-emitter SOT172A1 envelope with a ceramic cap. All leads , Its Respective Manufacturer Philips Semiconductors â  bb5 3T31 0031773 1D b H A P X Product specification NPN 6 GHz wideband transistor BFQ270 - N AMER PHIL IPS/DISCRETE blE D LIMITING VALUES In , Tin WM APX Product specification NPN 6 GHz wideband transistor BFQ270 - N AMER PHILIPS/DISCRETE
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TRANSISTOR ML5 resistor MR25 philips philips MR25 resistor MR25 Miniature Ceramic Plate Capacitor plate capacitor DD3177E

MGF4963BL

Abstract: InGaAs HEMT mitsubishi DESCRIPTION Outline Drawing The MGF4963BL super-low noise HEMT (High Electron Mobility Transistor) is , ) 2.6±0.1 Top (0.30) Bottom 0.5±0.1 (2.3) aAA (2.3) (0.30) 3.2±0.1 B , 0.400 174.2 0.370 -165.2 0.360 -144.6 0.360 -124.3 0.370 -104.1 0.390 -84.4 0.420 -65.3 , -48.9 -64.2 -80.9 -97.6 -115.3 -131.8 -148.0 -163.8 -178.8 163.9 144.6 122.9 101.5 80.4 , ) (ang) -13.2 -26.8 -40.6 -56.1 -70.8 -83.3 -94.6 -104.1 -113.1 -122.9 -132.9 -144.6 -157.5
Mitsubishi
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InGaAs HEMT mitsubishi MGF4963B MGF496 RO4003C

Silicon Bipolar Transistor

Abstract: MP4T56800 Medium Power, 12 Volt, High fT NPN Silicon Bipolar Transistor MP4T56800 V2.00 Features , fT silicon NPN transistor designed to work at 8 - 12 v olts VCC and with collector currents up to , transistor is designed for use in medium power amplifiers through 3 GHz and oscillators operating from VHF , reliability and ease of chip and wire assembly. This transistor series is also manufactured with silicon , Medium Power, 2 Volt, High fT NPN Silicon Bipolar Transistor MP4T56800 V2.00 Maximum Ratings @
M-Pulse Microwave
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MP4T568 Silicon Bipolar Transistor Medium Power Bipolar Transistors S21E S22E c 1685 transistor

IC 3263

Abstract: transistor c 3263 Silicon Bipolar Transistor Case Style MA4T56800 V2.00 Chip - MA4T56800 Case Style 1170 A DIM. A B , Preliminary Specifications Medium Power, 12 Volt, High fT NPN Silicon Bipolar Transistor , MA4T568 is a medium power, high fT silicon NPN transistor designed to work at 8 - 12 volts VCC and with , chip transistor is designed for use in medium power amplifiers through 3 GHz and oscillators operating , provide maximum device reliability and ease of chip and wire assembly. This transistor series is also
M/A-COM
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IC 3263 transistor c 3263 medium power high voltage transistor SILICON npn POWER TRANSISTOR c 869 MA4T568000

b 595 transistor

Abstract: Bipolar Transistor Features · High Output Power, 23 dBm PldB @ 1 GHz · High Gain-Bandwidth Product, 4 GHz fT · High Power Gain, I S21E 12 = 12 dB @ 1 GHz G TU (m ax.) = 11 d B @ 2 GHz MA4T56800 V2.00 Description The MA4T568 is a m edium power, high fT silicon NPN transistor designed to work at 8 - 12 volts , ceramic package. This chip transistor is designed for use in m edium pow er amplifiers through 3 GHz and , Silicon Bipolar Transistor Maximum Ratings @+25°c Parameter Col lector-Base Voltage Collector-Emitter
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b 595 transistor

transistor k 911

Abstract: ⡠B 2 b Q⡠b T 3 b 2 M2 4 H PHIN Product specification PNP 5 GHz wideband transistor , wideband transistor DESCRIPTION ^ BFT93 PINNING PNP transistor in a plastic SOT23 envelope , , radar systems, oscilloscopes, spectrum analyzers, etc. The transistor features low intermodulation , figure lc = -10 mA; VC = -5 V; f = 500 MHz; E Tam = 25 °C b 2.4 V0 output voltage dim , . CONDITIONS PARAMETER MAX. UNIT VC O B collector-base voltage open emitter - -15 V
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transistor k 911 BFR93 BFR93A

transistor bc 237c

Abstract: transistor 206 range Maximum thermal resistance Junction case flthJC 2.5 K/W . BU 204 Vceo Kces *cav / a> 'CM ^ B M , 17E » a^SDO^b 000*1446 1 AL6G T - 3 3 - (^ Min. Typ. Max. I BU 204 · tsU 205 · BU 206 , ) BEsat < / 2) BEsat U Base-emltter saturation voltage lc = 2 A , /B = 1 A BU 204, BU 205 /c = 2 A ,/a , ^cb = 10 V, f - 1 MHz Fall time /c = 2 A ,/ b = 1 A " t i 5 j *r CCB0 * pF » |JS 1 1The , ; BC 238 C Order-No. of Type Code for TO-92 Transistors Orientation of transistor on tape1 1 Additional
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transistor bc 237c transistor 206 BC 205 TRANSISTOR NPN bc 206 transistor bu205 BU206 IAL66 15A3DIN

TAG 8907

Abstract: lc 945 p transistor PhjjjP^Semiconductors M 711005b ODb^Bbl SIS PNP 5 GHz wideband transistor PHIN Product specification £ BFT93 DESCRIPTION PNP transistor in a plastic SOT23 envelope. It is primarily intended for , analyzers, etc. The transistor features low intermodulation distortion and high power gain; due to its very , Philips Semiconductors H 711DB2b DDhTBbS MEM HIPHIN Product specification PNP 5 GHz wideband transistor , specification PNP 5 GHz wideband transistor BFT93 CHARACTERISTICS Tj = 25 °C unless otherwise specified
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TAG 8907 lc 945 p transistor 1348 transistor B 1449 transistor 2F PNP SOT23 lc 945 transistor

S21C HF

Abstract: s21c SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR 2SC5110 U n it in mm FOR V C O A PPLIC A T IO N , em perature Storage T em perature Range M A R K IN G SYMBOL v CBO v CEO v EBO ic !B PC Tj , Type N am e hpE Rank "B MGCK H CHARACTERISTIC Collector Cut-off C urrent E m itter Cut-off C , - - - - VCB = 10V, I e = 0 ICBO lEBO v e b = 1 v - iC = ° hpE (Note 1) V c e = 5V. Ic = 5mA fT , V c b = 5^> Ie = 0» f^ lM H z (Note 2) Reverse T ransfer C apacitance Cre V c b = 5V, Ic = 3mA
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S21C HF s21c Z804 SC-70
Abstract: SILICON NPN EPITAXIAL PLANAR T YPE TRANSISTOR *| Q J FO R V C O A P P L IC A T IO N U nit , RATING 20 10 3 60 30 150 125 -5 5 -1 2 5 UNIT V V V mA mA mW °C °C M GO" LB B Type Name hpE Rank , f= lG H z Output Capacitance V c b = 5V, I e = 0- f= lM IIz Cob (Note 2) Reverse Transfer Capacitance Cre V c b = 5V, Ic = 3mA, Collector-Base Time Constant Cc'rbb f=30M Hz MIN. TYP. MAX. UNIT 0.1 , 152.1 144.6 138.5 Mag. 9.526 6.393 4.611 3.599 2.990 2.556 2.252 2.011 1.845 1.691 Ang. 129.8 -
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2SC5109
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