500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : S912XEQ512AVAL Supplier : NXP Semiconductors Manufacturer : Avnet Stock : - Best Price : $10.9542 Price Each : $12.5510
Part : S912XEQ512AVALR Supplier : NXP Semiconductors Manufacturer : Avnet Stock : - Best Price : $10.9542 Price Each : $12.5510
Part : S912XEQ512AVAL Supplier : NXP Semiconductors Manufacturer : Newark element14 Stock : - Best Price : $13.02 Price Each : $15.35
Part : S912XEQ512AVALR Supplier : NXP Semiconductors Manufacturer : Newark element14 Stock : - Best Price : $13.02 Price Each : $15.35
Part : NOT A VALID MATERIAL Supplier : TE Connectivity Manufacturer : Heilind Electronics Stock : - Best Price : - Price Each : -
Part : NOT A VALID PART NUMBE Supplier : TE Connectivity Manufacturer : Heilind Electronics Stock : - Best Price : - Price Each : -
Part : NOT A VALID MATERIAL Supplier : TE Connectivity Manufacturer : Interstate Connecting Components Stock : - Best Price : - Price Each : -
Part : NOT A VALID PART NUMBE Supplier : TE Connectivity Manufacturer : Interstate Connecting Components Stock : - Best Price : - Price Each : -
Shipping cost not included. Currency conversions are estimated. 

Avalanche diodes

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ¼ Epitaxial avalanche diodes 7 BYD73 series N AUER PHILIPS/DISCRETE fc^F D LIMITING VALUES In accordance , DQEbbl£ 575 MAPX Product specification Epitaxial avalanche diodes BYD73 series N AMER PHILIPS/DISCRETE , 401 HAPX Product specification Epitaxial avalanche diodes BYD73 series N AMER PHILIPS/DISCRETE b^E T , .nuuiiuuuiorB rroauci spt^iiiuauuii » , < Epitaxial avalanche diodes BYD73 series D.U.T. Input impedance , semiconductors bb53^31 GGSLblS 2Ã"1 BIAPX Product specitlcation Epitaxial avalanche diodes BYD73 series -
OCR Scan
BYD73A BYD73B BYD73C BYD73D BYD73E BYD73F BYD73G
Abstract: Philips Semiconductors bbS3T31 DDEbblD 7TT * A P X Epitaxial avalanche diodes Product , specification $ Epitaxial avalanche diodes BYD73 series N AUER P H ILIP S./D ISC R ETE bHE J , Semiconductors _ bb53T31 O O E b b lE S7E W A P X Epitaxial avalanche diodes Product , 2 b b l3 40=1 H A P X Epitaxial avalanche diodes Product specification BYD73 series , Epitaxial avalanche diodes Input impedance oscilloscope 1 MQ; rise time < 7 ns. Source impedance 50 f2 -
OCR Scan
S3T31
Abstract: specification Epitaxial avalanche diodes BYD71 series DESCRIPTION Rectifier diodes in hermetically sealed , 717 HAPX Philips Semiconductors_Product specification Epitaxial avalanche diodes BYD71 series , SbT HAPX Product specification Epitaxial avalanche diodes BYD71 series N AMER PHILIPS/DISCRETE blE Â , Manufacturer Philips Semiconductors _ DQ2fcib04 4Tb MAPX Product specification Epitaxial avalanche diodes , Product specification Epitaxial avalanche diodes BYD71 series N AMER PHILIPS/DISCRETE blE ]> p (W) o -
OCR Scan
BYD71A BYD71C BYD71D BYD71E BYD71F BYD71G BYD71B BVD71B
Abstract: avalanche diodes BYD73 series philips international sbe d mm&mm^nmmmrnmm^mmm DESCRIPTION QUICK REFERENCE , 7110fi5b OQHDbDÃ ITT HPHIN Product specification Epitaxial avalanche diodes philips international BYD73 , Product specification Epitaxiai avalanche diodes PHILIPS INTERNATIONAL THERMAL RESISTANCE BYD73 series SbE , 637 MPHIN Product specification Epitaxial avalanche diodes philips international CHARACTERISTICS T, = , QCmObll 7T3 â PHIN Product specification Epitaxial avalanche diodes philips international Input impedance -
OCR Scan
jz34s43 IEC134 33E marking BB2 marking ScansUX63 MSB022 711DA2
Abstract: Product specification Silicon glass passivated avalanche diodes BAS11/BAS12 N AMER PHILIPS , Semiconductors Product specification Silicon glass passivated avalanche diodes BAS 11/BAS 12 N AUER ,   APX Philips Semiconductors product specmcanon Silicon glass passivated avalanche diodes , avalanche diodes BAS 11/BAS 12 N AUER PHILIPS/DISCRETE MC ai9 100 lR 0*a) 10 1 0 , Product specification Silicon glass passivated avalanche diodes BAS 11/BAS 12 N AUER PHILIPS -
OCR Scan
BAS12 MSB027 BAS11 MCB820
Abstract: VISHAY Vishay Semiconductors About Sinterglass Avalanche Diodes VISHAY's Sinterglass Avalanche Diodes are specially designed for applications requiring high reliability and are suitable for storage , 's Sinterglass Avalanche Diodes combination of the following features a result of VISHAY's unique Sinterglass , won't go up in flames. Sinterglass Avalanche Diodes are the world's only Diodes with totally brazed , silicon rubber passivation or pressure contacted. Sinterglass Avalanche Diodes use a brazed construction Vishay Semiconductors
Original
Sinterglass high voltage avalanche diode avalanche Ultra Fast Avalanche Sinterglass Diode
Abstract: Epitaxial avalanche diodes BYD77 series LIMITING VALUES In accordance with the Absolute Maximum , Epitaxial avalanche diodes THERMAL RESISTANCE SYMBOL PARAMETER ^ th Hp THERMAL RESISTANCE 30 , Product specincation Epitaxial avalanche diodes BYD77 series CHARACTERISTICS Tj = 25 °C unless , bb 33 ET 7 * A P X rroauct specification primps semiconductors Epitaxial avalanche diodes , U C l S p e U M ll& U U i I BYD77 series Epitaxial avalanche diodes December 1991 â -
OCR Scan
BYD77D MARKING BYD77A BYD77B BYD77C BYD77D BYD77E BYD77F
Abstract: glass passivateci avalanche diodes BAS11/BAS12 N AMER PHILIPS/DISCRETE DESCRIPTION Glass passivated , Product specification Silicon glass passivateci avalanche diodes LIMITING VALUES In accordance with the , avalanche diodes - N AUER PHILIPS/DISCRETE BAS 11/BAS 12 CHARACTERISTICS T: = 25 °C unless otherwise , passivateci avalanche diodes - N AUER PHILIPS/DISCRETE BAS 11/BAS 12 rtot (mW) 1,42 200 300 S 100 200 , m OOEbl^ 1L7 â  APX Product specification Silicon glass passivateci avalanche diodes N AMER -
OCR Scan
NC5R 5B131 DDSL16 MBC053
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12; BAX12A Controlled avalanche diodes , specification Controlled avalanche diodes BAX12; BAX12A FEATURES DESCRIPTION · Hermetically sealed leaded glass SOD27 (DO-35) package The BAX12 and BAX12A are controlled avalanche diodes , Philips Semiconductors Product specification Controlled avalanche diodes BAX12; BAX12A , avalanche diodes BAX12; BAX12A GRAPHICAL DATA MBG455 500 IF MBG463 600 handbook Philips Semiconductors
Original
MAM246 BAX12 equivalent DO35 G1.L SCA74
Abstract: specification Epitaxial avalanche diodes BYD77 series DESCRIPTION Rectifier diodes in hermetically sealed , avalanche diodes BYD77 series LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). , Epitaxial avalanche diodes BYD77 series THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE , avalanche diodes BYD77 series CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER ,   bbSB^Bl 0D2bb32 3bD «Ã'PX Product specification Epitaxial avalanche diodes BYD77 series (A) Vp (V -
OCR Scan
BYD77G MARKING BYD77D MARKING BYD77g BYD77 DIODE MCD591 MMPS
Abstract: specification BYD71 series Epitaxial avalanche diodes DESCRIPTION Rectifier diodes in , Product specification Epitaxial avalanche diodes BYD71 series LIMITING VALUES In accordance with , P X Epitaxial avalanche diodes Product specification BYD71 series N AMER PHILIPS/DISCRETE ,   APX Epitaxial avalanche diodes Product specification BYD71 series N AHER PHILIPS/DISCRETE , Epitaxial avalanche diodes BYD71 series N AUER PHILIPS/DISCRETE hit T > MCDS67 0 0.25 -
OCR Scan
53T31 MBB168 S3131 UBC053
Abstract: Schottky Barrier Diodes (Axial) 79 EZ0150 Avalanche Diodes with built-in Thyristor 110 FML , RH 1A Fast-Recovery Rectifier Diodes (Axial) 28 R 2M Avalanche Diodes 112 RH 1B , -53 Schottky Barrier Diodes (Surface Mount) 82 RM 25 Avalanche Doides 112 RU 30Y , 26 Avalanche Doides 112 RU 30Z Fast-Recovery Rectifier Diodes (Axial) 35 SFPJ , (Axial) 49 RY 23 Avalanche Diodes 112 SHV-12EN High-Voltage Rectifier Diodes 26 Sanken Electric
Original
AG01A AG01Y AG01Z FMB-29 FMB-29L FMB-32
Abstract: VOLTAGE AVALANCHE DIODES 600 mw - 2.8 to 10.0 volts CODI's proprietary BiTaxial process creates a major breakthrough in the design of low voltage avalanche zener diodes. The small number of crystal dislocations and , new CODI low voltage avalanche diodes. MECHANICAL CHARACTERISTICS: DO-7 Package MAXIMUM RATINGS , 00574 D T-U-/I TO DeT|i77S47D Q0D0S74 t - LOW NOISE AVALANCHE DIODES LNA328 thru LNA3100 GLA28 , ~({ -/( io DF( 177SH7D 000DS7S fl LOW NOISE AVALANCHE DIODES LNA328 thru LNA3100 GLA28 thru GLA100 -
OCR Scan
1N60S2 lna 382 diode zener ZL 20 177S470 0D0GS73 LNA328LNA3 177S47D D000S7
Abstract: V). Avalanche Diodes Avalanche diodes or surge-voltageproof rectifier diodes of the series DSA , overvoltage net works. In addition, if avalanche diodes are put in series for high voltage applications, the , (page 29) manufactured in quantity are assembled with avalanche diodes. Fig. 1: Current and voltage , Diodes Diodes for High Switching Frequencies Fast Recovery Epitaxial Diodes (FRED) Power , wheeling diodes. At increasing switch ing frequencies, the proper functioning and efficiency of the power -
OCR Scan
high power fast recovery diodes
Abstract: V). Avalanche Diodes Avalanche diodes or surge-voltageproof rectifier diodes of the series DSA , overvoltage net works. In addition, if avalanche diodes are put in series for high voltage applications, the , (page 24) manufactured in quantity are assem bled with avalanche diodes. Glasspassivation , Diodes Diodes for High Switching Frequencies Fast Recovery Epitaxial Diodes (FRED) Diodes for General Purpose Applications Rectifier Diodes Power switches (IGBT, MOSFET, BJT, GTO) for applications -
OCR Scan
DWEP stud type diodes
Abstract: glass passivateci avalanche diodes T-G7-Ì5 BAS11/BAS12 PHILIPS INTERNATIONAL SbE D DESCRIPTION QUICK , specification Silicon glass passivateci avalanche diodes Tâ'"07-15 BAS 11/BAS 12 PHILIPS INTERNATIONAL 5bE T , Silicon glass passivateci avalanche DAOH,/DAO,n diodes BAS11/BAS12 "PHILIPS INTERNATIONAL StE 3 , passivateci avalanche diodes BAS 11/BAS 12 philips international SbE D (mWl 100 200 300 lF(AV)(mA) 100 200 , Product specification -t-07â'"15 - Silicon glass passivated avalanche BAS11/BAS12 diodes PHILIPS -
OCR Scan
marking 5b philips ScansUX40 0QM0141 DD4D14 0D4D147
Abstract: AN5370 Application Note AN5370 Using Avalanche Diodes Without Sharing Capacitors Application , and mA at elevated temperatures but with avalanche diodes reverse currents of greater than 1 A are , VOLTAGE Avalanche diodes are used in series to make high voltage strings. Due to their avalanche , criteria for avalanche diodes used in a string is that they should have the same repetitive voltage , diodes will contain diodes with different reverse leakage and differing avalanche voltage levels Dynex
Original
MZ0409W normal diode 1400V Diode slow diode snap-off diode AN5370-1
Abstract: VISHAY Vishay Semiconductors Sinterglass Avalanche Diodes for Power-Factor-Correction (PFC , Sinterglass Avalanche Diode series of PFC Sinterglass Avalanche Diodes. VLINE RMS [V] VRRM [V] 110 , line voltage levels Preferred types for the mains sinterglass avalanche diodes and the boost sinterglass avalanche diodes are listed in Tables 6 and Table 7. Mains Sinterglass Avalanche Diodes (4 , BYW56 400 W BYW86 Table 6.Selection Guide for the mains sinterglass avalanche diodes Document Vishay Semiconductors
Original
500 watt smps circuit diagram 60000-3-2 BT51 BT51K BYW55 ELECTRONIC BALLAST transistor DIAGRAM EN61000-3-2 BYV27-600 SF4004 BYV28-600 BYV27-200 BYV26C
Abstract: EPITAXIAL AVALANCHE DIODES The PHS1001 series devices are glass-passivated epitaxial silicon rectifier diodes in hermetically sealed glass envelopes. These devices feature low forward voltage drop, very , r 46 K/W Epitaxial avalanche diodes N AMER PHILIPS/DISCRETE _ , 100 °C. â \ r 700 July 1987 PHS1Q01 SERIES Epitaxial avalanche diodes N AMER PH IL , Epitaxial avalanche diodes 1 ' 1 1 _ 102 10 PHS1001 SERIES V r (V ) 103 Fig -
OCR Scan
DD11L7T PHS1002 PHS1003 7Z77551 S1Q01 T-03-/3
Abstract: V). Avalanche Diodes Avalanche diodes or surge-voltageproof rectifier diodes of the series DSA , voltage rectifier module 3 (page 25) manufactured in quantity ar< assem bled with avalanche diodes. Fig , Diodes Diodes for High Switching Frequencies Fast Recovery Epitaxial Diodes (FRED) Power , wheeling diodes. At increasing switch ing frequencies, the proper functioning and efficiency of the power , by Qfr, lR Mand trr - figure 1). With optimized ultra-fast switching diodes, the development engineer -
OCR Scan
Showing first 20 results.