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BYT62-TAP Vishay Semiconductors BYT62 Standard Avalanche Sinterglass Diode visit Digikey Buy
BYG23T-M3/TR Vishay Semiconductors DIODE AVALANCHE 1300V 1A DO214AC visit Digikey Buy
BY269TR Vishay Semiconductors DIODE AVALANCH 1600V 800MA SOD57 visit Digikey Buy
BYT62-TR Vishay Semiconductors BYT62 Standard Avalanche Sinterglass Diode visit Digikey Buy
BYV26C-TAP Vishay Semiconductors DIODE AVALANCHE 600V 1A SOD57 visit Digikey Buy
SF1200-TAP Vishay Semiconductors SF1200, SF1600 Ultrafast Avalanche Sinterglass Diode visit Digikey Buy

Avalanche diodes

Catalog Datasheet MFG & Type PDF Document Tags

BYD73D

Abstract: BYD73 ¼ Epitaxial avalanche diodes 7 BYD73 series N AUER PHILIPS/DISCRETE fc^F D LIMITING VALUES In accordance , DQEbbl£ 575 MAPX Product specification Epitaxial avalanche diodes BYD73 series N AMER PHILIPS/DISCRETE , 401 HAPX Product specification Epitaxial avalanche diodes BYD73 series N AMER PHILIPS/DISCRETE b^E T , .nuuiiuuuiorB rroauci spt^iiiuauuii » , < Epitaxial avalanche diodes BYD73 series D.U.T. Input impedance , semiconductors bb53^31 GGSLblS 2Ã"1 BIAPX Product specitlcation Epitaxial avalanche diodes BYD73 series
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BYD73A BYD73B BYD73C BYD73D BYD73E BYD73F BYD73G Avalanche diodes
Abstract: Philips Semiconductors bbS3T31 DDEbblD 7TT * A P X Epitaxial avalanche diodes Product , specification $ Epitaxial avalanche diodes BYD73 series N AUER P H ILIP S./D ISC R ETE bHE J , Semiconductors _ bb53T31 O O E b b lE S7E W A P X Epitaxial avalanche diodes Product , 2 b b l3 40=1 H A P X Epitaxial avalanche diodes Product specification BYD73 series , Epitaxial avalanche diodes Input impedance oscilloscope 1 MQ; rise time < 7 ns. Source impedance 50 f2 -
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S3T31

BYD71A

Abstract: BYD71 specification Epitaxial avalanche diodes BYD71 series DESCRIPTION Rectifier diodes in hermetically sealed , 717 HAPX Philips Semiconductors_Product specification Epitaxial avalanche diodes BYD71 series , SbT HAPX Product specification Epitaxial avalanche diodes BYD71 series N AMER PHILIPS/DISCRETE blE Â , Manufacturer Philips Semiconductors _ DQ2fcib04 4Tb MAPX Product specification Epitaxial avalanche diodes , Product specification Epitaxial avalanche diodes BYD71 series N AMER PHILIPS/DISCRETE blE ]> p (W) o
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BYD71A BYD71C BYD71D BYD71E BYD71F BYD71G BYD71B BVD71B

BYD73

Abstract: BYD73B avalanche diodes BYD73 series philips international sbe d mm&mm^nmmmrnmm^mmm DESCRIPTION QUICK REFERENCE , 7110fi5b OQHDbDÃ ITT HPHIN Product specification Epitaxial avalanche diodes philips international BYD73 , Product specification Epitaxiai avalanche diodes PHILIPS INTERNATIONAL THERMAL RESISTANCE BYD73 series SbE , 637 MPHIN Product specification Epitaxial avalanche diodes philips international CHARACTERISTICS T, = , QCmObll 7T3 â PHIN Product specification Epitaxial avalanche diodes philips international Input impedance
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BB2 marking ScansUX63 jz34s43 IEC134 33E marking MSB022 711DA2
Abstract: Product specification Silicon glass passivated avalanche diodes BAS11/BAS12 N AMER PHILIPS , Semiconductors Product specification Silicon glass passivated avalanche diodes BAS 11/BAS 12 N AUER ,   APX Philips Semiconductors product specmcanon Silicon glass passivated avalanche diodes , avalanche diodes BAS 11/BAS 12 N AUER PHILIPS/DISCRETE MC ai9 100 lR 0*a) 10 1 0 , Product specification Silicon glass passivated avalanche diodes BAS 11/BAS 12 N AUER PHILIPS -
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BAS12 MSB027 BAS11 MCB820

avalanche diodes

Abstract: Sinterglass VISHAY Vishay Semiconductors About Sinterglass Avalanche Diodes VISHAY's Sinterglass Avalanche Diodes are specially designed for applications requiring high reliability and are suitable for storage , 's Sinterglass Avalanche Diodes combination of the following features a result of VISHAY's unique Sinterglass , won't go up in flames. Sinterglass Avalanche Diodes are the world's only Diodes with totally brazed , silicon rubber passivation or pressure contacted. Sinterglass Avalanche Diodes use a brazed construction
Vishay Semiconductors
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Sinterglass high voltage avalanche diode Switching Characteristics of Fast Recovery Diodes Ultra Fast Avalanche Sinterglass Diode avalanche

BYD77D MARKING

Abstract: BYD77G Epitaxial avalanche diodes BYD77 series LIMITING VALUES In accordance with the Absolute Maximum , Epitaxial avalanche diodes THERMAL RESISTANCE SYMBOL PARAMETER ^ th Hp THERMAL RESISTANCE 30 , Product specincation Epitaxial avalanche diodes BYD77 series CHARACTERISTICS Tj = 25 °C unless , bb 33 ET 7 * A P X rroauct specification primps semiconductors Epitaxial avalanche diodes , U C l S p e U M ll& U U i I BYD77 series Epitaxial avalanche diodes December 1991 â
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BYD77G BYD77D MARKING BYD77A BYD77B BYD77C BYD77D BYD77E BYD77F

BAS11

Abstract: BAS12 glass passivateci avalanche diodes BAS11/BAS12 N AMER PHILIPS/DISCRETE DESCRIPTION Glass passivated , Product specification Silicon glass passivateci avalanche diodes LIMITING VALUES In accordance with the , avalanche diodes - N AUER PHILIPS/DISCRETE BAS 11/BAS 12 CHARACTERISTICS T: = 25 °C unless otherwise , passivateci avalanche diodes - N AUER PHILIPS/DISCRETE BAS 11/BAS 12 rtot (mW) 1,42 200 300 S 100 200 , m OOEbl^ 1L7 â  APX Product specification Silicon glass passivateci avalanche diodes N AMER
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NC5R 5B131 DDSL16 MBC053

BAX12A

Abstract: BAX12 equivalent DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12; BAX12A Controlled avalanche diodes , specification Controlled avalanche diodes BAX12; BAX12A FEATURES DESCRIPTION · Hermetically sealed leaded glass SOD27 (DO-35) package The BAX12 and BAX12A are controlled avalanche diodes , Philips Semiconductors Product specification Controlled avalanche diodes BAX12; BAX12A , avalanche diodes BAX12; BAX12A GRAPHICAL DATA MBG455 500 IF MBG463 600 handbook
Philips Semiconductors
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MAM246 BAX12 equivalent DO35 G1.L SCA74

MARKING BYD77D

Abstract: MARKING BYD77g specification Epitaxial avalanche diodes BYD77 series DESCRIPTION Rectifier diodes in hermetically sealed , avalanche diodes BYD77 series LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). , Epitaxial avalanche diodes BYD77 series THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE , avalanche diodes BYD77 series CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER ,   bbSB^Bl 0D2bb32 3bD «Ã'PX Product specification Epitaxial avalanche diodes BYD77 series (A) Vp (V
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MARKING BYD77D MARKING BYD77g BYD77 DIODE MCD591 MMPS specification of BYD77 DIODE
Abstract: specification BYD71 series Epitaxial avalanche diodes DESCRIPTION Rectifier diodes in , Product specification Epitaxial avalanche diodes BYD71 series LIMITING VALUES In accordance with , P X Epitaxial avalanche diodes Product specification BYD71 series N AMER PHILIPS/DISCRETE ,   APX Epitaxial avalanche diodes Product specification BYD71 series N AHER PHILIPS/DISCRETE , Epitaxial avalanche diodes BYD71 series N AUER PHILIPS/DISCRETE hit T > MCDS67 0 0.25 -
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53T31 MBB168 S3131 UBC053
Abstract: Schottky Barrier Diodes (Axial) 79 EZ0150 Avalanche Diodes with built-in Thyristor 110 FML , RH 1A Fast-Recovery Rectifier Diodes (Axial) 28 R 2M Avalanche Diodes 112 RH 1B , -53 Schottky Barrier Diodes (Surface Mount) 82 RM 25 Avalanche Doides 112 RU 30Y , 26 Avalanche Doides 112 RU 30Z Fast-Recovery Rectifier Diodes (Axial) 35 SFPJ , (Axial) 49 RY 23 Avalanche Diodes 112 SHV-12EN High-Voltage Rectifier Diodes 26 Sanken Electric
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AG01A AG01Y AG01Z FMB-29 FMB-29L FMB-32

1N60S2

Abstract: lna 382 VOLTAGE AVALANCHE DIODES 600 mw - 2.8 to 10.0 volts CODI's proprietary BiTaxial process creates a major breakthrough in the design of low voltage avalanche zener diodes. The small number of crystal dislocations and , new CODI low voltage avalanche diodes. MECHANICAL CHARACTERISTICS: DO-7 Package MAXIMUM RATINGS , 00574 D T-U-/I TO DeT|i77S47D Q0D0S74 t - LOW NOISE AVALANCHE DIODES LNA328 thru LNA3100 GLA28 , ~({ -/( io DF( 177SH7D 000DS7S fl LOW NOISE AVALANCHE DIODES LNA328 thru LNA3100 GLA28 thru GLA100
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1N60S2 lna 382 diode zener ZL 20 177S470 0D0GS73 LNA328LNA3 177S47D D000S7

high power fast recovery diodes

Abstract: V). Avalanche Diodes Avalanche diodes or surge-voltageproof rectifier diodes of the series DSA , overvoltage net works. In addition, if avalanche diodes are put in series for high voltage applications, the , (page 29) manufactured in quantity are assembled with avalanche diodes. Fig. 1: Current and voltage , Diodes Diodes for High Switching Frequencies Fast Recovery Epitaxial Diodes (FRED) Power , wheeling diodes. At increasing switch ing frequencies, the proper functioning and efficiency of the power
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high power fast recovery diodes

stud type diodes

Abstract: DWEP V). Avalanche Diodes Avalanche diodes or surge-voltageproof rectifier diodes of the series DSA , overvoltage net works. In addition, if avalanche diodes are put in series for high voltage applications, the , (page 24) manufactured in quantity are assem bled with avalanche diodes. Glasspassivation , Diodes Diodes for High Switching Frequencies Fast Recovery Epitaxial Diodes (FRED) Diodes for General Purpose Applications Rectifier Diodes Power switches (IGBT, MOSFET, BJT, GTO) for applications
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stud type diodes DWEP

marking 5b philips

Abstract: BAS11 glass passivateci avalanche diodes T-G7-Ì5 BAS11/BAS12 PHILIPS INTERNATIONAL SbE D DESCRIPTION QUICK , specification Silicon glass passivateci avalanche diodes Tâ'"07-15 BAS 11/BAS 12 PHILIPS INTERNATIONAL 5bE T , Silicon glass passivateci avalanche DAOH,/DAO,n diodes BAS11/BAS12 "PHILIPS INTERNATIONAL StE 3 , passivateci avalanche diodes BAS 11/BAS 12 philips international SbE D (mWl 100 200 300 lF(AV)(mA) 100 200 , Product specification -t-07â'"15 - Silicon glass passivated avalanche BAS11/BAS12 diodes PHILIPS
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marking 5b philips ScansUX40 0QM0141 DD4D14 0D4D147

normal diode

Abstract: 1400V Diode AN5370 Application Note AN5370 Using Avalanche Diodes Without Sharing Capacitors Application , and mA at elevated temperatures but with avalanche diodes reverse currents of greater than 1 A are , VOLTAGE Avalanche diodes are used in series to make high voltage strings. Due to their avalanche , criteria for avalanche diodes used in a string is that they should have the same repetitive voltage , diodes will contain diodes with different reverse leakage and differing avalanche voltage levels
Dynex
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MZ0409W normal diode 1400V Diode slow diode snap-off diode AN5370-1

60000-3-2

Abstract: 500 watt smps circuit diagram VISHAY Vishay Semiconductors Sinterglass Avalanche Diodes for Power-Factor-Correction (PFC , Sinterglass Avalanche Diode series of PFC Sinterglass Avalanche Diodes. VLINE RMS [V] VRRM [V] 110 , line voltage levels Preferred types for the mains sinterglass avalanche diodes and the boost sinterglass avalanche diodes are listed in Tables 6 and Table 7. Mains Sinterglass Avalanche Diodes (4 , BYW56 400 W BYW86 Table 6.Selection Guide for the mains sinterglass avalanche diodes Document
Vishay Semiconductors
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60000-3-2 500 watt smps circuit diagram BT51K BT51 BYW55 Electronic ballast circuit diagram 230 v 20 w EN61000-3-2 BYV27-600 SF4004 BYV28-600 BYV27-200 BYV26C
Abstract: EPITAXIAL AVALANCHE DIODES The PHS1001 series devices are glass-passivated epitaxial silicon rectifier diodes in hermetically sealed glass envelopes. These devices feature low forward voltage drop, very , r 46 K/W Epitaxial avalanche diodes N AMER PHILIPS/DISCRETE _ , 100 °C. â \ r 700 July 1987 PHS1Q01 SERIES Epitaxial avalanche diodes N AMER PH IL , Epitaxial avalanche diodes 1 ' 1 1 _ 102 10 PHS1001 SERIES V r (V ) 103 Fig -
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DD11L7T PHS1002 PHS1003 7Z77551 S1Q01 T-03-/3
Abstract: V). Avalanche Diodes Avalanche diodes or surge-voltageproof rectifier diodes of the series DSA , voltage rectifier module 3 (page 25) manufactured in quantity ar< assem bled with avalanche diodes. Fig , Diodes Diodes for High Switching Frequencies Fast Recovery Epitaxial Diodes (FRED) Power , wheeling diodes. At increasing switch ing frequencies, the proper functioning and efficiency of the power , by Qfr, lR Mand trr - figure 1). With optimized ultra-fast switching diodes, the development engineer -
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