| Contextual Datasheet Results |
1 - 50 of about 601 for Alpha Omega.. |
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First line: AOZ1360 Programmable Current-Limited Load Switch Preliminary DATASHEET Specifications subject change General Description Abstract: .. AOZ1360 Preliminary Data Sheet Rev0 1 Alpha and Omega Semiconductor Confidential. General Description The AOZ1360 is a member of Alpha and Omega Semiconductor’s high-side load switch family .. datasheet abstract.. |
892.29 Kb |
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First line: AO4498L N-Channel Enhancement Mode Field Effect Transistor General Description AO4498L combines advanced Abstract: .. Alpha & Omega Semiconductor, Ltd. www.aosmd.com. AO4498L. Symbol Min Typ Max Units. BVDSS 30 36.5 V. VDS=30V, VGS=0V 1. TJ=55°C 5. IGSS 100 nA. VGS th Gate Threshold Voltage 1.3 1.8 2.5 V. ID ON 140 A. 4 .. datasheet abstract.. |
143.91 Kb |
6 Pages
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First line: July AO4701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Abstract: .. Alpha & Omega Semiconductor, Ltd.. AO4701. Symbol Min Typ Max Units. BVDSS -30 V. -1. TJ=55°C -5. IGSS ±100 nA. VGS th -0.7 -1 -1.3 V. ID ON -25 A. 42.5 49. TJ=125°C 74. 54 64 mΩ. 83 120 mΩ. gFS 7 11 S. VSD -0.75 -1 V. IS .. datasheet abstract.. |
177.77 Kb |
8 Pages |
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First line: AO4410 N-Channel Enhancement Mode Field Effect Transistor General Description AO4410 uses advanced Abstract: .. Alpha & Omega Semiconductor, Ltd.. AO4410. Symbol Min Typ Max Units. BVDSS 30 V. 1. TJ=55°C 5. IGSS 100 nA. VGS th 0.8 1.1 1.5 V. ID ON 80 A. 4.7 5.5. TJ=125°C 6.9. 5.2 6.2 mΩ. gFS 102 S. VSD 0.64 1 V. IS 4.5 A. Ciss 9130 .. datasheet abstract.. |
302.51 Kb |
6 Pages |
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First line: AO6402 N-Channel Enhancement Mode Field Effect Transistor General Description AO6402 uses advanced Abstract: .. Alpha & Omega Semiconductor, Ltd.. AO6402. Symbol Min Typ Max Units. BVDSS 30 V. 1. TJ=55°C 5. IGSS 100 nA. VGS th 1 1.9 3 V. ID ON 20 A. 22.5 28. TJ=125°C 31.3 38. 34.5 42 mΩ. gFS 10 15.4 S. VSD 0.76 1 V. IS 3 A. Ciss 680 .. datasheet abstract.. |
171.36 Kb |
6 Pages |
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First line: July AO6800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description AO6800 Abstract: .. Alpha & Omega Semiconductor, Ltd.. AO6800. Symbol Min Typ Max Units. BVDSS 30 V. 1. TJ=55°C 5. IGSS 100 nA. VGS th 0.6 1 1.4 V. ID ON 20 A. 50 60. TJ=125°C 66 80. 60 75 mΩ. 88 115 mΩ. gFS 7.8 S. VSD 0.8 1 V. IS 1.5 A. Ciss 390 .. datasheet abstract.. |
231.16 Kb |
6 Pages |
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First line: March AO6408 N-Channel Enhancement Mode Field Effect Transistor General Description AO6408 uses Abstract: .. Alpha & Omega Semiconductor, Ltd.. AO6408. Symbol Min Typ Max Units. BVDSS 20 V. 10. TJ=55°C 25. IGSS ±10 μA. BVGSO ±12 V. VGS th 0.5 0.75 1 V. ID ON 30 A. 11 14. TJ=125°C 14.3 17. 12.6 16 mΩ. 16.5 22 mΩ. 23.4 30 mΩ. gFS .. datasheet abstract.. |
176.73 Kb |
6 Pages |
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First line: July AO6400 N-Channel Enhancement Mode Field Effect Transistor General Description AO6400 uses Abstract: .. Alpha & Omega Semiconductor, Ltd.. AO6400. Symbol Min Typ Max Units. BVDSS 30 V. 1. TJ=55°C 5. IGSS 100 nA. VGS th 0.7 1.1 1.4 V. ID ON 35 A. 22.3 28. TJ=125°C 31.5 39. 26.8 33 mΩ. 42.8 52 mΩ. gFS 10 15 S. VSD 0.71 1 V. IS .. datasheet abstract.. |
277.89 Kb |
6 Pages |
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First line: AO6405 P-Channel Enhancement Mode Field Effect Transistor General Description AO6405 uses advanced Abstract: .. Alpha & Omega Semiconductor, Ltd.. AO6405. Symbol Min Typ Max Units. BVDSS -30 V. -1. TJ=55°C -5. IGSS ±100 nA. VGS th -1 -1.8 -3 V. ID ON -10 A. 39 52. TJ=125°C 54 70. 67 87 mΩ. gFS 6 8.6 S. VSD -0.77 -1 V. IS -2.8 A. Ciss .. datasheet abstract.. |
228.64 Kb |
6 Pages |
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First line: AOD4140 N-Channel SDMOS POWER Transistor General Description AOD4140 fabricated with SDMOS trench Abstract: .. Alpha & Omega Semiconductor, Ltd. www.aosmd.com. AOD4140. Symbol Min Typ Max Units. BVDSS 25 V. 10. TJ=55°C 50. IGSS 100 nA. VGS th 1 2 3 V. ID ON 120 A. 5.7 7. TJ=125°C 8.6 10.5. 11 14 mΩ. gFS 50 S. VSD 0.7 1 V. IS 55 .. datasheet abstract.. |
198.65 Kb |
7 Pages
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First line: AO4728L N-Channel Enhancement Mode Field Effect Transistor SRFET General Description SRFET AO4728L Abstract: .. Alpha & Omega Semiconductor, Ltd. www.aosmd.com. AO4728L. Symbol Min Typ Max Units. BVDSS 30 V. VDS=30V, VGS=0V 0.1. TJ=125°C 20. IGSS 0.1 μA. VGS th Gate Threshold Voltage 1.2 1.8 2.2 V. ID ON 146 A. 3 .. datasheet abstract.. |
163.33 Kb |
7 Pages
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First line: AOB420 AOB420L Green Product N-Channel Enhancement Mode Field Effect Transistor General Description Abstract: .. Alpha & Omega Semiconductor, Ltd.. AOB420, AOB420L. Symbol Min Typ Max Units. BVDSS 30 V. 1. TJ=55°C 5. IGSS 100 nA. VGS th 1.5 2.15 2.5 V. ID ON 110 A. 5.05 6.5. TJ=125°C 7.7 11. 8.2 10 mΩ. gFS 60 S. VSD 0.72 1 V. IS .. datasheet abstract.. |
321.38 Kb |
8 Pages 
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First line: AO4408 N-Channel Enhancement Mode Field Effect Transistor General Description AO4408 uses advanced Abstract: .. Alpha & Omega Semiconductor, Ltd.. AO4408. Symbol Min Typ Max Units. BVDSS 30 V. 1. TJ=55°C 5. IGSS 100 nA. VGS th 1 1.5 2.5 V. ID ON 40 A. 10.5 14. TJ=125°C 16 21. 13 16.5 mΩ. gFS 30 48 S. VSD 0.76 1 V. IS 4.5 A. Ciss 1020 .. datasheet abstract.. |
271.1 Kb |
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First line: March AO4406 N-Channel Enhancement Mode Field Effect Transistor General Description AO4406 uses Abstract: .. Alpha & Omega Semiconductor, Ltd.. AO4406. Symbol Min Typ Max Units. BVDSS 30 V. 1. TJ=55°C 5. IGSS 100 nA. VGS th 0.8 1 1.5 V. ID ON 60 A. 11.5 14. TJ=125°C 16 19.2. 13.5 16.5 mΩ. 19.5 26 mΩ. gFS 25 38 S. VSD 0.83 1 V. IS .. datasheet abstract.. |
222.9 Kb |
7 Pages |
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First line: July AOD414 N-Channel Enhancement Mode Field Effect Transistor General Description AOD414 uses Abstract: .. Alpha & Omega Semiconductor, Ltd.. AOD414. Symbol Min Typ Max Units. BVDSS 30 V. 1. TJ=55°C 5. IGSS 100 nA. VGS th 1.2 1.8 2.4 V. ID ON 110 A. 4.2 5.2. TJ=125°C 6 7.5. 5.6 7 mΩ. gFS 85 S. VSD 0.7 1 V. IS 85 A. Ciss 6060 pF .. datasheet abstract.. |
214.06 Kb |
7 Pages |
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First line: AOD406 N-Channel Enhancement Mode Field Effect Transistor General Description AOD406 uses advanced Abstract: .. Alpha & Omega Semiconductor, Ltd.. AOD406. Symbol Min Typ Max Units. BVDSS 30 V. 1. TJ=55°C 5. IGSS 100 nA. VGS th 0.8 1.1 1.5 V. ID ON 100 A. 4 5. TJ=125°C 5.8 7. 4.6 5.7 mΩ. gFS 102 S. VSD 0.64 1 V. IS 85 A. Ciss 9130 pF .. datasheet abstract.. |
215.86 Kb |
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First line: July AOD412 N-Channel Enhancement Mode Field Effect Transistor General Description AOD412 uses Abstract: .. Alpha & Omega Semiconductor, Ltd.. AOD412. Symbol Min Typ Max Units. BVDSS 30 V. 1. TJ=55°C 5. IGSS 100 nA. VGS th 1.5 2.15 2.5 V. ID ON 85 A. 5.5 7. TJ=125°C 8.8 11. 8.25 10.5 mΩ. gFS 60 S. VSD 0.72 1 V. IS 85 A. Ciss 1320 .. datasheet abstract.. |
259.21 Kb |
7 Pages |
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First line: July AOD404 N-Channel Enhancement Mode Field Effect Transistor General Description AOD404 uses Abstract: .. Alpha & Omega Semiconductor, Ltd.. AOD404. Symbol Min Typ Max Units. BVDSS 30 V. 1. TJ=55°C 5. IGSS 100 nA. VGS th 1 1.6 2 V. ID ON 85 A. 5.4 7. TJ=125°C 8.4 10.5. 6.6 8 mΩ. gFS 60 S. VSD 0.74 1 V. IS 85 A. Ciss 2100 pF. Coss .. datasheet abstract.. |
312.59 Kb |
7 Pages |
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First line: AO4410 AO4410L Lead-Free N-Channel Enhancement Mode Field Effect Transistor Abstract: .. Alpha & Omega Semiconductor, Ltd.. AO4410, AO4410L. Symbol Min Typ Max Units. BVDSS 30 V. 0.005 1. TJ=55°C 5. IGSS 100 nA. VGS th 0.8 1.1 1.5 V. ID ON 80 A. 4.7 5.5. TJ=125°C 6.4 7.4. 5.2 6.2 mΩ. gFS 102 S. VSD 0.64 .. datasheet abstract.. |
261.86 Kb |
7 Pages
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First line: AO4407 AO4407L Lead-Free P-Channel Enhancement Mode Field Effect Transistor General Description Abstract: .. Alpha & Omega Semiconductor, Ltd.. AO4407, AO4407L. Symbol Min Typ Max Units. BVDSS -30 V. -1. TJ=55°C -5. IGSS ±100 nA. VGS th -1.7 -2.5 -3 V. ID ON 60 A. 11 14. TJ=125°C 15 19. 10 13 mΩ. 24 mΩ. gFS 26 S. VSD -0.72 - .. datasheet abstract.. |
227.3 Kb |
7 Pages
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First line: AOTF470 N-Channel Enhancement Mode Field Effect Transistor General Description AOTF470 uses advanced Abstract: .. Alpha & Omega Semiconductor, Ltd. www.aosmd.com. AOTF470. Symbol Min Typ Max Units. BVDSS 75 V. 1. TJ=55°C 5. IGSS 1 uA. VGS th 2 2.7 4 V. ID ON 200 A. 9.8 11.5. TJ=125°C 16.0 19.0. gFS Transconductance 90 S .. datasheet abstract.. |
72.35 Kb |
5 Pages
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First line: AOT5N60 600V N-Channel MOSFET formerly engineering part number AOT9604 General Description AOT5N60 Abstract: .. Alpha & Omega Semiconductor, Ltd. www.aosmd.com. AOT5N60. Symbol Min Typ Max Units. 600 V. 700 V. BVDSS /∆TJ 0.65. V/ oC. 1. 10. IGSS ±100 nA. VGS th 3 3.9 5 V. RDS ON 1.44 1.8 Ω. gFS 7.7 S. VSD 0.76 1 V. IS 5 A. ISM 16 A .. datasheet abstract.. |
160.99 Kb |
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First line: AON4420L N-Channel Enhancement Mode Field Effect Transistor General Description AON4420L combines advanced Abstract: .. Alpha & Omega Semiconductor, Ltd. www.aosmd.com. AON4420L. Symbol Min Typ Max Units. BVDSS 30 V. 1. TJ = 55°C 5. IGSS ±100 nA. VGS th 1.4 1.9 2.5 V. ID ON 50 A. 16 20. TJ=125°C 27. 21 26. gFS 30 S. VSD 0.75 1 V. IS 3 A. Ciss .. datasheet abstract.. |
144.42 Kb |
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First line: AOB440 N-Channel Enhancement Mode Field Effect Transistor General Description AOB440 uses advanced Abstract: .. Alpha & Omega Semiconductor, Ltd. www.aosmd.com. AOB440. Symbol Min Typ Max Units. BVDSS 60 V. 10. TJ=55°C 50. IGSS 100 nA. VGS th 2 3 4 V. ID ON 150 A. 6.3 7.5. TJ=125°C 10.5 13. gFS Transconductance 90 S. VSD .. datasheet abstract.. |
82.78 Kb |
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First line: AO6402A N-Channel Enhancement Mode Field Effect Transistor General Description AO6402A / L uses advanced Abstract: .. Alpha & Omega Semiconductor, Ltd. www.aosmd.com. AO6402A. Symbol Min Typ Max Units. BVDSS 30 V. 1. TJ=55°C 5. IGSS 100 nA. VGS th 1 1.6 2.5 V. ID ON 30 A. 22.5 27. TJ=125°C 32 39. 32.5 40 mΩ. gFS 20 S. VSD 0.75 1 V. IS .. datasheet abstract.. |
275.81 Kb |
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First line: AO4490 N-Channel Enhancement Mode Field Effect Transistor General Description AO4490 / L uses advanced Abstract: .. Alpha & Omega Semiconductor, Ltd. www.aosmd.com. AO4490. Symbol Min Typ Max Units. BVDSS 30 V. 1. TJ=55°C 5. IGSS 10 μA. VGS th 1.4 1.8 2.5 V. ID ON 120 A. 6 7.2. TJ=125°C 8.5 10. 8 10mΩ. gFS 55 S. VSD 0.70 1.0 V. IS .. datasheet abstract.. |
125.42 Kb |
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First line: AO4430 N-Channel Enhancement Mode Field Effect Transistor General Description AO4430 / L uses advanced Abstract: .. Alpha & Omega Semiconductor, Ltd. www.aosmd.com. AO4430. Symbol Min Typ Max Units. BVDSS 30 V. 1. TJ=55°C 5. IGSS 100 nA. VGS th 1 1.8 2.5 V. ID ON 80 A. 4.7 5.5. TJ=125°C 6.5 8. 6.2 7.5 mΩ. gFS 82 S. VSD 0.7 1 V. IS 4 .. datasheet abstract.. |
276.22 Kb |
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First line: AOU460 N-Channel Enhancement Mode Field Effect Transistor General Description AOU460 uses advanced Abstract: .. Alpha & Omega Semiconductor, Ltd.. AOU460. Symbol Min Typ Max Units. BVDSS 25 V. 0.01 1. TJ=55°C 5. IGSS 100 nA. VGS th 1 1.8 2.5 V. ID ON 70 A. 12 14. TJ=125°C 17.7. 20 24 mΩ. gFS 18.9 S. VSD 0.74 1 V. IS 25 A. Ciss 830 1000 .. datasheet abstract.. |
68.53 Kb |
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First line: AOU456 N-Channel Enhancement Mode Field Effect Transistor General Description AOU456 uses advanced Abstract: .. Alpha & Omega Semiconductor, Ltd.. AOU456. Symbol Min Typ Max Units. BVDSS 25 V. 0.01 1. TJ=55°C 5. IGSS 100 nA. VGS th 1 1.74 3 V. ID ON 100 A. 5.5 7. TJ=125°C 8. 8.5 10. gFS 45 S. VSD 0.74 1 V. IS 50 A. Ciss 1850 2220 pF .. datasheet abstract.. |
66.09 Kb |
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First line: AOU454 N-Channel Enhancement Mode Field Effect Transistor General Description AOU454 uses advanced Abstract: .. Alpha & Omega Semiconductor, Ltd.. AOU454. Symbol Min Typ Max Units. BVDSS 40 V. 1. TJ=55°C 5. IGSS ±100 nA. VGS th 1 2.3 3 V. ID ON 30 A. 25 33. TJ=125°C 39 52. 34 47 mΩ. gFS 25 S. VSD 0.76 1 V. IS 12 A. Ciss 404 pF. Coss 95 .. datasheet abstract.. |
66.72 Kb |
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First line: AOU452 N-Channel Enhancement Mode Field Effect Transistor General Description AOU452 uses advanced Abstract: .. Alpha & Omega Semiconductor, Ltd.. AOU452. Symbol Min Typ Max Units. BVDSS 25 V. 1. TJ=55°C 5. IGSS 100 nA. VGS th 1 1.8 3 V. ID ON 100 A. 7 9. TJ=125°C 10 12. 12 15 mΩ. gFS 35 S. VSD 0.72 1 V. IS 55 A. Ciss 1230 1476 pF. Coss .. datasheet abstract.. |
68.46 Kb |
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First line: AOU438 N-Channel Enhancement Mode Field Effect Transistor General Description AOU438 uses advanced Abstract: .. Alpha & Omega Semiconductor, Ltd.. AOU438. Symbol Min Typ Max Units. BVDSS 30 V. 1. TJ=55°C 5. IGSS 100 nA. VGS th 1 1.8 3 V. ID ON 85 A. 3.5 4.5. TJ=125°C 5.4 6.5. 5.4 6.5 mΩ. gFS 106 S. VSD 0.72 1 V. IS 85 A. Ciss 3200 3840 .. datasheet abstract.. |
62.66 Kb |
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First line: AOU436 N-Channel Enhancement Mode Field Effect Transistor General Description AOU436 uses advanced Abstract: .. Alpha & Omega Semiconductor, Ltd.. AOU436. Symbol Min Typ Max Units. BVDSS 30 V. 1. TJ=55°C 5. IGSS 100 nA. VGS th 1 1.8 3 V. ID ON 85 A. 5.4 8.5. TJ=125°C 8.1 9.7. 9.8 14 mΩ. gFS 88 S. VSD 0.71 1 V. IS 85 A. Ciss 1520 1825 .. datasheet abstract.. |
67.58 Kb |
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First line: AOU414 N-Channel Enhancement Mode Field Effect Transistor General Description AOU414 uses advanced Abstract: .. Alpha & Omega Semiconductor, Ltd.. AOU414. Symbol Min Typ Max Units. BVDSS 30 V. 0.005 1. TJ=55°C 5. IGSS 100 nA. VGS th 1.2 1.8 2.4 V. ID ON 200 A. 4.7 5.7. TJ=125°C 6.5 8. 6 7.5 mΩ. gFS 85 S. VSD 0.7 1 V. IS 85 A. Ciss 6060 .. datasheet abstract.. |
59.69 Kb |
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First line: AOU413 P-Channel Enhancement Mode Field Effect Transistor General Description AOU413 uses advanced Abstract: .. Alpha & Omega Semiconductor, Ltd.. AOU413. Symbol Min Typ Max Units. BVDSS -40 V. -1. TJ=55°C -5. IGSS ±100 nA. VGS th -1 -1.9 -3 V. ID ON -30 A. 36 45. TJ=125°C 56 70. 51 69 mΩ. gFS 16 S. VSD -0.75 -1 V. IS -12 A. Ciss 657 .. datasheet abstract.. |
61.12 Kb |
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First line: AOU412 N-Channel Enhancement Mode Field Effect Transistor General Description AOU412 uses advanced Abstract: .. Alpha & Omega Semiconductor, Ltd.. AOU412. Symbol Min Typ Max Units. BVDSS 30 V. 0.005 1. TJ=55°C 5. IGSS 100 nA. VGS th 1.5 2.15 2.5 V. ID ON 85 A. 5.7 7.5. TJ=125°C 8.4 10. 8.7 11 mΩ. gFS 60 S. VSD 0.72 1 V. IS 85 A. Ciss .. datasheet abstract.. |
60.93 Kb |
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First line: AOU408 N-Channel Enhancement Mode Field Effect Transistor General Description AOU408 uses advanced Abstract: .. Alpha & Omega Semiconductor, Ltd.. AOU408. Symbol Min Typ Max Units. BVDSS 105 V. 1. TJ=55°C 5. IGSS 100 nA. VGS th 2.5 3.2 4 V. ID ON 100 A. 21.5 28. TJ=125°C 32 40. 24 31 mΩ. gFS 50 S. VSD 0.73 1 V. IS 55 A. Ciss 2038 2445 .. datasheet abstract.. |
64.15 Kb |
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First line: AOU404 N-Channel Enhancement Mode Field Effect Transistor General Description AOU404 uses advanced Abstract: .. Alpha & Omega Semiconductor, Ltd.. AOU404. Symbol Min Typ Max Units. BVDSS 75 V. 1. TJ=55°C 5. IGSS 100 nA. VGS th 1 2.4 3 V. ID ON 20 A. 100 130. TJ=125°C 180 220. 105 140 mΩ. 120 165 mΩ. gFS 9 S. VSD 0.79 1 V. IS 10 A. Ciss .. datasheet abstract.. |
66.54 Kb |
5 Pages
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First line: AOU403 P-Channel Enhancement Mode Field Effect Transistor General Description AOU403 uses advanced Abstract: .. Alpha & Omega Semiconductor, Ltd.. AOU403. Symbol Min Typ Max Units. BVDSS -60 V. -0.003 -1. TJ=55°C -5. IGSS ±100 nA. VGS th -1.5 -2.1 -3 V. ID ON -30 A. 91 115. TJ=125°C 150. 114 150 mΩ. gFS 12.8 S. VSD -0.76 -1 .. datasheet abstract.. |
62.75 Kb |
5 Pages
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First line: AOU402 N-Channel Enhancement Mode Field Effect Transistor General Description AOU402 uses advanced Abstract: .. Alpha & Omega Semiconductor, Ltd.. AOU402. Symbol Min Typ Max Units. BVDSS 60 V. 1. TJ=55°C 5. IGSS 100 nA. VGS th 1 2.4 3 V. ID ON 30 A. 47 60. TJ=125°C 85. 67 85 mΩ. gFS 14 S. VSD 0.74 1 V. IS 12 A. Ciss 385 540 pF. Coss 55 .. datasheet abstract.. |
67.85 Kb |
5 Pages
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First line: AOU401 P-Channel Enhancement Mode Field Effect Transistor General Description AOU401 uses advanced Abstract: .. Alpha & Omega Semiconductor, Ltd.. AOU401. Symbol Min Typ Max Units. BVDSS -60 V. -0.003 -1. TJ=55°C -5. IGSS ±100 nA. VGS th -1.2 -1.9 -2.4 V. ID ON -60 A. 32 40. TJ=125°C 53. 43 55 mΩ. gFS 32 S. VSD -0.73 -1 V. IS - .. datasheet abstract.. |
69.86 Kb |
5 Pages
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First line: AOU400 N-Channel Enhancement Mode Field Effect Transistor General Description AOU400 uses advanced Abstract: .. Alpha & Omega Semiconductor, Ltd.. AOU400. Symbol Min Typ Max Units. BVDSS 60 V. 1. TJ=55°C 5. IGSS 100 nA. VGS th 1 2.1 3 V. ID ON 60 A. 16 20. TJ=125°C 31. 20 25 mΩ. gFS 5.6 S. VSD 0.74 1 V. IS 4 A. Ciss 1920 2300 pF. Coss .. datasheet abstract.. |
64.31 Kb |
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First line: AOT428 N-Channel Enhancement Mode Field Effect Transistor General Description AOT428 uses advanced Abstract: .. Alpha & Omega Semiconductor, Ltd.. AOT428. Symbol Min Typ Max Units. BVDSS 75 V. 0.02 1. TJ=55°C 5. IGSS 100 nA. VGS th 2 3.4 4.5 V. ID ON 200 A. 9.1 11. TJ=125°C 15.5 20. gFS 100 S. VSD 0.7 1 V. IS 55 A. Ciss 3790 4900 .. datasheet abstract.. |
73.99 Kb |
5 Pages
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First line: AOT404 N-Channel Enhancement Mode Field Effect Transistor General Description AOT404 uses advanced Abstract: .. Alpha Omega Semiconductor, Ltd.. AOT404. Symbol Min Typ Max Units. BVDSS 105 V. 1. TJ=55°C 5. IGSS 100 nA. VGS th 2.5 3.2 4 V. ID ON 100 A. 21.5 28. TJ=125°C 44 53. 24 31 mΩ. gFS 50 S. VSD 0.73 1 V. IS 55 A. Ciss 2038 2445 .. datasheet abstract.. |
63.6 Kb |
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First line: AOT402 N-Channel Enhancement Mode Field Effect Transistor General Description AOT402 uses advanced Abstract: .. Alpha & Omega Semiconductor, Ltd.. AOT402. Symbol Min Typ Max Units. BVDSS 105 V. 1. TJ=55°C 5. IGSS 100 nA. VGS th 2 3.3 4 V. ID ON 200 A. 6.9 8.6. TJ=125°C 12.8 15. 7.9 10 mΩ. gFS 88 S. VSD 0.7 1 V. IS 110 A. Ciss 7.7 10 .. datasheet abstract.. |
64.41 Kb |
5 Pages
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First line: AOT400 N-Channel Enhancement Mode Field Effect Transistor General Description AOT400 uses advanced Abstract: .. Alpha & Omega Semiconductor, Ltd.. AOT400. Symbol Min Typ Max Units. BVDSS 75 V. 1. TJ=55°C 5. IGSS 100 nA. VGS th 2 2.8 4 V. ID ON 200 A. 4.2 4.7. TJ=125°C 7.2 8.2. 4.6 5.2 mΩ. 106. 200. VSD 0.7 1 V. IS 110 A. Ciss 8390 10500 .. datasheet abstract.. |
66.28 Kb |
5 Pages
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First line: AOT462 N-Channel Enhancement Mode Field Effect Transistor General Description AOT462 uses advanced Abstract: .. Alpha & Omega Semiconductor, Ltd. www.aosmd.com. AOT462. Symbol Min Typ Max Units. BVDSS 60 V. 1. TJ=55°C 5. IGSS 100 nA. VGS th 2 3.1 4 V. ID ON 120 A. 14.5 18. TJ=125°C 25 30. gFS Transconductance 50 S. VSD 0 .. datasheet abstract.. |
64.93 Kb |
5 Pages
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First line: AOT460 N-Channel Enhancement Mode Field Effect Transistor General Description AOT460 uses advanced Abstract: .. Alpha & Omega Semiconductor, Ltd. www.aosmd.com. AOT460. Symbol Min Typ Max Units. BVDSS 60 V. 10. TJ=55°C 50. IGSS 100 nA. VGS th 2 2.95 4 V. ID ON 250 A. 6.3 7.5. TJ=125°C 10.5 13. gFS Transconductance 90 .. datasheet abstract.. |
67.53 Kb |
5 Pages
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First line: AO4447 P-Channel Enhancement Mode Field Effect Transistor General Description AO4447 uses advanced Abstract: .. Alpha & Omega Semiconductor, Ltd.. AO4447. Symbol Min Typ Max Units. BVDSS -30 V. -1. TJ=55°C -10. IGSS ±10 μA. VGS th -1 -1.3 -1.6 V. ID ON -60 A. 6.7 8. TJ=125°C 9.4 12. 9.2 12 mΩ. gFS 60 S. VSD -0.69 -1 V. IS 5.5 A. Ciss .. datasheet abstract.. |
590.68 Kb |
7 Pages
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First line: AOT430 N-Channel Enhancement Mode Field Effect Transistor General Description AOT430 uses advanced Abstract: .. Alpha & Omega Semiconductor, Ltd.. AOT430. Symbol Min Typ Max Units. BVDSS 75 V. 1. TJ=55°C 5. IGSS 1 uA. VGS th 2 2.7 4 V. ID ON 200 A. 9.8 11.5. TJ=125°C 16.0 19.0. gFS Transconductance 90 S. VSD 0.7 1 V. IS 80 A. Ciss .. datasheet abstract.. |
72.24 Kb |
5 Pages
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