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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

AV smd transistor

Catalog Datasheet MFG & Type PDF Document Tags

transistor 2N2222 SMD

Abstract: capacitor 2200 uF BLF4G10LS-160 UHF power LDMOS transistor Rev. 01 - 19 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at , common source class-AB test circuit. Mode of operation f VDS PL PL(AV) Gp D ACPR400 ACPR600 , Semiconductors UHF power LDMOS transistor 1.3 Applications I RF power amplifiers for GSM, GSM EDGE and , BLF4G10LS-160 NXP Semiconductors UHF power LDMOS transistor 6. Characteristics Table 6
NXP Semiconductors
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transistor 2N2222 SMD capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor

capacitor 2200 uF

Abstract: transistor 2N2222 SMD BLF4G10-160 UHF power LDMOS transistor Rev. 01 - 22 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at , common source class-AB test circuit. Mode of operation f VDS PL PL(AV) Gp D ACPR400 ACPR600 , UHF power LDMOS transistor 1.3 Applications I RF power amplifiers for GSM, GSM EDGE and CDMA base , June 2007 2 of 14 BLF4G10-160 NXP Semiconductors UHF power LDMOS transistor 6
NXP Semiconductors
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ACPR750 ACPR1980 R10 smd ELECTROLYTIC capacitor 2200 uF 1812-X7R 2N2222 78L08 IS-95

30RF35

Abstract: VJ1206Y104KXB BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 01 - 21 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base , ] [2] f (MHz) 2500 to 2700 VDS PL(AV) (V) 32 (W) 20 PL(p) Gp (W) 200 16 D ACPR885k , frequency range NXP Semiconductors BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor 2 , BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics
NXP Semiconductors
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30RF35 VJ1206Y104KXB smd transistor equivalent table ACPR885 2002/95/EC

BLF6G22LS-100

Abstract: RF35 BLF6G22LS-100 Power LDMOS transistor Rev. 3 - 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at , -carrier W-CDMA 2110 to 2170 28 25 [1] VDS PL(AV) D IMD3 ACPR (dB) (%) (dBc , Hazardous Substances (RoHS) BLF6G22LS-100 NXP Semiconductors Power LDMOS transistor 1.3 , transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol
NXP Semiconductors
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RF35
Abstract: BLF6G22LS-100 Power LDMOS transistor Rev. 3 â'" 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at , -carrier W-CDMA 2110 to 2170 28 25 18.2 [1] VDS PL(AV) Gp ηD IMD3 ACPR (% , -100 NXP Semiconductors Power LDMOS transistor 1.3 Applications Ì RF power amplifiers for W-CDMA , Semiconductors Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless NXP Semiconductors
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transistor D 1002

Abstract: BLF6G22LS-100 BLF6G22LS-100 Power LDMOS transistor Rev. 02 - 31 March 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at , -carrier W-CDMA 2110 to 2170 28 25 [1] VDS PL(AV) D IMD3 ACPR (dB) (%) (dBc , Hazardous Substances (RoHS) BLF6G22LS-100 NXP Semiconductors Power LDMOS transistor 1.3 , . 2010. All rights reserved. 2 of 12 BLF6G22LS-100 NXP Semiconductors Power LDMOS transistor
NXP Semiconductors
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transistor D 1002

BLF6G22LS-100

Abstract: RF35 BLF6G22LS-100 Power LDMOS transistor Rev. 01 - 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at , common source class-AB production test circuit. 2-carrier W-CDMA [1] f VDS PL(AV) Gp D , transistor 1.3 Applications I RF power amplifiers for W-CDMA base stations and multi carrier applications , Semiconductors Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless
NXP Semiconductors
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TRANSISTOR SMD BV

C5750X7R1H106M

Abstract: 30RF35 BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 01 - 11 November 2008 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base , performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation f VDS PL(AV , (RoHS) BLF6G38-100; BLF6G38LS-100 NXP Semiconductors WiMAX power LDMOS transistor 1.3 , -100; BLF6G38LS-100 NXP Semiconductors WiMAX power LDMOS transistor 5. Thermal characteristics Table 5
NXP Semiconductors
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C5750X7R1H106M 6G38LS-100

transistor 9575

Abstract: BLF6G10-160RN BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 01 - 20 January 2009 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station , at Tcase = 25 °C in a class-AB production test circuit. 2-carrier W-CDMA [1] f VDS PL(AV , ) BLF6G10(LS)-160RN NXP Semiconductors Power LDMOS transistor 1.3 Applications I RF power , NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal
NXP Semiconductors
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transistor 9575 smd transistor f3 65 Capacitor 27 p-F 1 w2 smd transistor CAPACITOR 330 NF 10LS-160RN

BLF6G10LS-160RN

Abstract: TRANSISTOR SMD BV BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 - 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station , at Tcase = 25 °C in a class-AB production test circuit. Mode of operation f VDS PL(AV , Semiconductors Power LDMOS transistor 1.3 Applications RF power amplifiers for GSM, GSM EDGE, W-CDMA and , LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol
NXP Semiconductors
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nxp TRANSISTOR SMD 13

BLF6G38S-25

Abstract: transistor equivalent table BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 3 - 11 March 2013 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station , (MHz) 3400 to 3600 VDS (V) 28 PL(AV) (W) 4.5 Gp (dB) 15 D (%) 24 ACPR885k ACPR1980k (dBc , -25; BLF6G38S-25 WiMAX power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj =
NXP Semiconductors
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transistor equivalent table BDS3/3/4.6-4S2 BDS3/3/4.6-4S2-Z
Abstract: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 â'" 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base , performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation f VDS PL(AV , substances (RoHS) BLF6G10(LS)-160RN NXP Semiconductors Power LDMOS transistor 1.3 Applications , BLF6G10(LS)-160RN NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5 NXP Semiconductors
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TRANSISTOR j412

Abstract: BLF6G38S-25 BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 01 - 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station , (MHz) 3400 to 3600 VDS (V) 28 PL(AV) (W) 4.5 Gp (dB) 15 D (%) 24 ACPR885k ACPR1980k (dBc , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 , 14 NXP Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 6
NXP Semiconductors
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TRANSISTOR j412 J412 - TRANSISTOR SMD

smd transistor 3400

Abstract: J412 - TRANSISTOR SMD BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 02 - 23 December 2008 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station , at Tcase = 25 °C in a class-AB production test circuit. Mode of operation f VDS PL(AV , Semiconductors WiMAX power LDMOS transistor 2. Pinning information Table 2. Pinning Pin , power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise
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smd transistor 3400 cdma QPSK modulation Walsh pilot C4532X7R1H475M 722 smd transistor

transistor K 1352

Abstract: C5750X7R1H106M BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 - 26 May 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station , at Tcase = 25 °C in a class-AB production test circuit. Mode of operation f VDS PL(AV) PL(p , Semiconductors WiMAX power LDMOS transistor 2. Pinning information Table 2. Pinning Pin , WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless
NXP Semiconductors
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transistor K 1352 TRANSISTOR K 135
Abstract: -23 Formed SMD Package CSA1162 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor , Continental Device India Limited Data Sheet â'"V CBO â'"V CEO â'"V EBO â'"IC Ptot Tj m ax. m ax. m ax. m ax. m ax. m ax. 50 50 5 150 150 150 hFE min. m ax. 70 400 â'"V CBO â'"V CEO â'"V EBO â'"IC â'"I B m ax. m ax. m ax. m ax. m ax. 50 50 5 150 30 V V V , voltage â'"V(BR)CEO min â'"IC = 1 mA; IB = 0 50 V Collector cut-off current â'"VCB = 50 V; IE = 0 Continental Device India
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CSA1162Y CSA1162GR C-120

C5750X7R1H106M

Abstract: smd transistor equivalent table BLF6G20LS-140 Power LDMOS transistor Rev. 01 - 27 February 2009 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at , common source class-AB production test circuit. 2-carrier W-CDMA [1] f VDS PL(AV) Gp D , Semiconductors Power LDMOS transistor 1.3 Applications I RF power amplifiers for GSM, GSM EDGE, W-CDMA and , transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol
NXP Semiconductors
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Abstract: BLF6G10LS-160 Power LDMOS transistor Rev. 01 - 29 September 2008 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at , VDS (V) 32 PL(AV) (W) 32 Gp (dB) 22 D (%) 27 ACPR (dBc) -42[1] Test signal: 3GPP; test , restriction of hazardous substances (RoHS) NXP Semiconductors BLF6G10LS-160 Power LDMOS transistor , 2008 2 of 10 NXP Semiconductors BLF6G10LS-160 Power LDMOS transistor 6. Characteristics NXP Semiconductors
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Abstract: BLF6G10S-45 Power LDMOS transistor Rev. 4 - 11 March 2013 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies , VDS (V) 28 PL(AV) (W) 1.0 Gp (dB) 23 D (%) 8 ACPR (dBc) 48.5[1] Test signal: 3GPP; test , restriction of hazardous substances (RoHS) NXP Semiconductors BLF6G10S-45 Power LDMOS transistor , Rev. 4 - 11 March 2013 2 of 11 NXP Semiconductors BLF6G10S-45 Power LDMOS transistor 6 NXP Semiconductors
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transistor BV-1 501

Abstract: smd 501 transistor BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 01 - 12 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station , at Tcase = 25 °C in a class-AB production test circuit. D 1-carrier N-CDMA[2] VDS PL(AV) PL , -50; BLF6G38LS-50 NXP Semiconductors WiMAX power LDMOS transistor I Compliant to Directive 2002/95/EC , transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter
NXP Semiconductors
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transistor BV-1 501 smd 501 transistor
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