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ATF-531P8-TR2 Broadcom Limited RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, PLASTIC, DFP-N, LCC-8 visit Digikey Buy
ATF-531P8-TR1 Broadcom Limited RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, PLASTIC, DFP-N, LCC-8 visit Digikey Buy
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ATF-531P8 Datasheet

Part Manufacturer Description PDF Type
ATF-531P8 Agilent Technologies High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm LPCC Package Original
ATF-531P8 Avago Technologies Single Voltage E-pHEMT Low Noise +38 dBm OIP3 in LPCC Original
ATF-531P8-BLK Agilent Technologies Enhancement Mode[1] Pseudomorphic HEMT in 2x2 mm2 LPCC[3] Package Original
ATF-531P8-BLK Agilent Technologies High Linearity Enhancement Mode Pseudomorphic HEMT in 2 x 2 Square (mm) LPCC Package Original
ATF-531P8-TR1 Agilent Technologies High Linearity Enhancement Mode Pseudomorphic HEMT in 2 x 2 Square (mm) LPCC Package Original
ATF-531P8-TR1 Agilent Technologies Enhancement Mode[1] Pseudomorphic HEMT in 2x2 mm2 LPCC[3] Package Original
ATF-531P8-TR1 Avago Technologies RF FETs, Discrete Semiconductor Products, IC PHEMT 2GHZ 4V 135MA 8-LPCC Original
ATF-531P8-TR2 Agilent Technologies Enhancement Mode[1] Pseudomorphic HEMT in 2x2 mm2 LPCC[3] Package Original
ATF-531P8-TR2 Agilent Technologies High Linearity Enhancement Mode Pseudomorphic HEMT in 2 x 2 Square (mm) LPCC Package Original
ATF-531P8-TR2 Avago Technologies RF FETs, Discrete Semiconductor Products, IC PHEMT 2GHZ 4V 135MA 8-LPCC Original

ATF-531P8

Catalog Datasheet MFG & Type PDF Document Tags

C882 TRANSISTOR

Abstract: ATF531P8 TouchstoneTM format. The ATF531P83.s2p file can be downloaded from the Avago Wireless Design Center web site , ATF-531P8 900 MHz High Linearity Amplifier Application Note 1372 Introduction This application , Amplifier using Enhancement Mode pHEMT ATF-531P8. The amplifier has a typical gain of 22 dB and an Output , in Figure 1. ATF-531P8 The ATF-531P8 E-pHEMT FET features a combination of industry-leading , amplifiers. The ATF-531P8 is specified on the datasheet at 2 GHz and 4V, 135 mA. The ATF-531P8 is ideally
Avago Technologies
Original
C882 TRANSISTOR ATF531P8 Avago Mounted Amplifiers Curtice BCV62B BCV62C AN-1222 ATF-54143 MTT-28 AN-1281 5988-9546EN

agilent pHEMT transistor

Abstract: transistor C715 using TouchstoneTM format. The ATF531P83.s2p file can be downloaded from the Agilent Wireless Design , Agilent ATF-531P8 E-pHEMT GaAs FET Low Noise Amplifier Design for 800 and 900 MHz Applications , high linearity. Besides having a very low typical noise figure (0.6 dB), the ATF-531P8 uses a 3 Volt bias and provides a +31 dBm intercept point at 40 mA drain current. In addition, the ATF-531P8 is an , voltage differential between the gate and source terminals. The ATF-531P8 is ideally suited to meet the
Agilent Technologies
Original
agilent pHEMT transistor transistor C715 agilent pHEMT transistor LNA LOW NOISE AMPLIFIER atf531 GaAs pHEMT Low Noise 2x2 vhf fet lna 5988-9545EN

transistor C715

Abstract: ATF531 TouchstoneTM format. The ATF531P83.s2p file can be downloaded from the Avago Wireless Design Center web site , ATF-531P8 E-pHEMT GaAs FET Low Noise Amplifier Design for 800 and 900 MHz Applications , linearity. Besides having a very low typical noise figure (0.6 dB), the ATF-531P8 uses a 3 Volt bias and provides a +31 dBm intercept point at 40 mA drain current. In addition, the ATF-531P8 is an enhancement , differential between the gate and source terminals. The ATF-531P8 is ideally suited to meet the needs of
Avago Technologies
Original
fet curtice mesfet fet

ATF-531P8

Abstract: Agilent ATF-531P8 Reliability Data Sheet Introduction Reliability Prediction Model The ATF-531P8 is fabricated with Agilent Technologies' new PHEMT C process. This process has been qualified at wafer level and a similar robustness was observed compared to other PHEMT processes. The Agilent ATF-531P8 was tested at various stress intervals for DC and RF functionality, i.e., Vds, Vgs , 1.0E+11 1.0E+12 MTTF (HOURS) Figure 1. ATF-531P8 Point MTTF vs. Channel Temperature Table 3
Agilent Technologies
Original
JESD22-A113-A 5988-7962EN

LL1608-FSR15J

Abstract: MCR01J000 ATF-531P8 1900 MHz High Linearity Amplifier Application Note 1320 Introduction Avago Technologies' ATF-531P8 is an enhancement mode PHEMT designed for low noise and high linearity applications. With a noise figure of 1.16 dB and OIP3 of 40 dBm, ATF-531P8 is well suited as a base station first or , to fully appreciate the performance of the ATF-531P8, a designer must first understand a few simple system level basics. For example, the ATF-531P8 may be designed into a CDMA, WCDMA or GSM base station
Avago Technologies
Original
IIP31 IIP32 LL1608-FSR15J MCR01J000 Tower Mounted Amplifiers Schematic 0805ZC105KATZA 1OIP31 OIP32 OIP31 5988-8237EN

ATF-531P8-BLK

Abstract: 0840 057 No. of Devices Container ATF-531P8-TR1 3000 7" Reel ATF-531P8-TR2 10000 13 , Agilent ATF-531P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3 , 's ATF-531P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead JEDEC-standard , applications ATF-531P8 Absolute Maximum Ratings[1] Symbol Parameter Units VDS Drain­Source , ATF-531P8 Electrical Specifications TA = 25°C, DC bias for RF parameters is Vds = 4V and Ids = 135 mA
Agilent Technologies
Original
MO229 0840 057 marking 0836 OIP350 5988-8407EN 5988-9990EN

ATF-531P8

Abstract: fet curtice nonlinear model L1 3PL 7 L3 Vds ATF-531P8 R7 Figure 1. ATF-531P83 850 ­ 900 MHz HLA Active Bias , using TouchstoneTM format. The ATF531P83.s2p file can be downloaded from the Agilent Wireless Design , Agilent ATF-531P8 900 MHz High Linearity Amplifier Application Note 1372 Introduction This , Amplifier using Enhancement Mode pHEMT ATF-531P8. The amplifier has a typical gain of 22 dB and an Output , in Figure 1. ATF-531P8 The ATF-531P8 E-pHEMT FET features a combination of industry-leading
Agilent Technologies
Original
fet curtice nonlinear model High Dynamic Range FET sot-89 DEMO-ATF-5X1P8 RG200D

150526

Abstract: sf128 www.agilent.com/view/rf Ordering Information Part Number ATF-531P8-TR1 ATF-531P8-TR2 ATF-531P8-BLK No. of , ATF-531P8 High Linearity Enhancement Mode[1] Pseudomorphic HEMT in 2x2 mm2 LPCC[3] Package Data Sheet Description Agilent Technologies's ATF531P8 is a single-voltage high linearity, low noise , divided by DC bias power. ATF-531P8 Absolute Maximum Ratings[1] Symbol Parameter Units VDS VGS V , been deembedded from actual measurements. ATF-531P8 Electrical Specifications TA = 25°C, DC
Avago Technologies
Original
150526 sf128
Abstract: www.agilent.com/view/rf Ordering Information Part Number ATF-531P8-TR1 ATF-531P8-TR2 ATF-531P8-BLK No. of , ATF-531P8 High Linearity Enhancement Mode[1] Pseudomorphic HEMT in 2x2 mm2 LPCC[3] Package Data Sheet Description Agilent Technologies's ATF531P8 is a single-voltage high linearity, low noise , divided by DC bias power. ATF-531P8 Absolute Maximum Ratings[1] Symbol Parameter Units VDS VGS V I , been deembedded from actual measurements. ATF-531P8 Electrical Specifications TA = 25°C, DC Avago Technologies
Original
AV02-0845EN

ATF-521P8

Abstract: ATF531P8 Low Noise and High Linearity Applications using the Agilent ATF-531P8 Application Note 1320 Introduction Agilent Technologies' ATF-531P8 is an enhancement mode PHEMT designed for low noise and high linearity applications. With a noise figure of 1.16 dB and OIP3 of 40 dBm, ATF-531P8 is well suited as a , fully appreciate the performance of the ATF-531P8, a designer must first understand a few simple system level basics. For example, the ATF531P8 may be designed into a CDMA, WCDMA or GSM base station
Agilent Technologies
Original
ATF-521P8 RK73H1J68R1F

wn 2308

Abstract: AT-2 Number No. of Devices Container ATF-531P8-TR1 3000 7" Reel ATF-531P8-TR2 10000 13 , Agilent ATF-531P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3 , 's ATF-531P8 is a sing le-volt age high linearity , lo w noise E-pHEMT housed in an 8-lead JEDEC-st , General purpose discrete E-pHEMT for other high linearity applications ATF-531P8 Absolute Maximum , ) VDS (V) 150 0.6 0.3 39 40 41 ATF-531P8 Electrical Specifications TA = 25°C, DC
Agilent Technologies
Original
wn 2308 AT-2 03-rf 048 5988-7935EN

03311704

Abstract: AV02-0845EN Devices Container ATF-531P8-TR1 3000 7" Reel ATF-531P8-TR2 10000 13"Reel ATF-531P8-BLK , ATF-531P8 High Linearity Enhancement Mode[1] Pseudomorphic HEMT in 2x2 mm2 LPCC[3] Package Data Sheet Description Features Avago Technologies' ATF531P8 is a single-voltage high linearity , . ATF-531P8 Absolute Maximum Ratings[1] Symbol Parameter Units VDS Drain­Source Voltage[2] V , been deembedded from actual measurements. ATF-531P8 Electrical Specifications TA = 25°C, DC
Avago Technologies
Original
03311704 133443 89829 0845en

ATF-531P8

Abstract: ATF-531P8-BLK 7" Reel ATF-531P8-TR2 10000 13"Reel ATF-531P8-BLK 100 antistatic bag 2 x 2 LPCC , ATF-531P8 High Linearity Enhancement Mode[1] Pseudomorphic HEMT in 2x2 mm2 LPCC[3] Package Data Sheet Description Features Agilent Technologies's ATF531P8 is a single-voltage high , . ATF-531P8 Absolute Maximum Ratings[1] Symbol Parameter Units VDS Drain­Source Voltage[2] V , been deembedded from actual measurements. ATF-531P8 Electrical Specifications TA = 25°C, DC
Avago Technologies
Original
AMPLI 741 low noise high frequency HEMT from agilent
Abstract: Information Part Number ATF-531P8-TR1 ATF-531P8-TR2 ATF-531P8-BLK No. of Devices 3000 10000 100 , Agilent ATF-531P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3 , Description Agilent Technologies's ATF-531P8 is a single-voltage high linearity, low noise E-pHEMT housed in , month of manufacture. ATF-531P8 Absolute Maximum Ratings[1] Symbol VDS VGS VGD IDS IGS Pdiss Pin , . 2 ATF-531P8 Electrical Specifications TA = 25°C, DC bias for RF parameters is Vds = 4V and Ids = Agilent Technologies
Original

MGA-72543

Abstract: wimax AVAGO TECHNOLOGIES WiMAX Designer Kit (ATWK-WX01) Contains 3 parts each of the following 32 part numbers: ATF-50189 MGA-30216 MGA-30316 ALM-31222 ALM-31322 ALM-32320 ALM-42216 ALM-42316 MGA-565P8 ABA-54563 ADA-4789 HSMP-3816 HSMP-3866 ATF-54143 ATF-55143 ATF-33143 MGA-645T6 MGA-655T6 MGA-675T6 MGA-632P8 MGA-14516 VMMK-1225 MGA-72543 MGA-71543 MGA-425P8 MGA-665P8 ATF-531P8 MGA-53589 IAM-92516 IAM-93516 HSMP-482B HSMP-4820 Avago's WiMAX Designer Kit. This kit has a broad mix of
-
Original
wimax 3866 transistor limiters

ku-band pll lnb

Abstract: mga-62563 -1322 MGA-53543 MGA-545P8 MGA-61563 4 ATF-52189 ATF-521P8 ATF-53189 ATF-531P8 ADA-4789 ATF , 0.62 E-pHEMT FET, SOT89 ATF-531P8 4/135 0.05 - 6 20 24.5 38 0.6 E-pHEMT FET , 40 0.62 E-pHEMT FET, SOT89 ATF-531P8 4/135 5/280 0.05 - 6 1.8 - 2.2 20 31.0 , 40 0.62 E-pHEMT FET, SOT89 ATF-531P8 4/135 0.05 - 6 20 24.5 38 0.6 , -521P8 4.5/200 2 17 26.5 42 1.5 E-pHEMT FET, LPCC ATF-531P8 4/135 2 20 24.5
Avago Technologies
Original
ku-band pll lnb mga-62563 MGA-68563 MMIC SOT 363 schottky diode 3 lead 5Ghz lna transistor datasheet MGA-631P8 ATF-58143 ALM-1222 ALM-1322 P-6545 AMMP-6530

ISDB-t modulator

Abstract: ku-band pll lnb -53543 MGA-545P8 MGA-61563 4 ATF-52189 ATF-521P8 ATF-53189 ATF-531P8 ADA-4789 RF Amplifier Typ , FET, SOT343 ATF-53189 4/135 0.05 - 6 15.5 23 40 0.62 E-pHEMT FET, SOT89 ATF-531P8 , ATF-531P8 4/135 0.05 - 6 20 24.5 38 0.6 E-pHEMT FET, LPCC ALM-1222 5/280 , -53543 MGA-545P8 ATF-52189 ATF-521P8 ATF-53189 ATF-531P8 ALM-1222 ADA-4789 ATF-50189 ATF-501P8 ATF , 26.5 42 1.5 E-pHEMT FET, LPCC ATF-531P8 4/135 2 20 24.5 38 0.6 E-pHEMT
Avago Technologies
Original
ISDB-t modulator HP 5082-3081 power fet 70 mil micro-X Package VCO 9GHZ 10GHZ MGA-30116 DC-2GHz MMIC amp 23 dB MGA-12516 MGA-135166 MGA-21108 AMMP-6120 AV00-0116EN AV00-0141EN

LNA ku-band

Abstract: ku-band pll lnb /dB2 @ 2GHz Device Type and Package LNA MGA-53543 MGA-52543 ATF-58143 ATF-54143 ATF-531P8 MGA-53543 MGA-82563 MGA-81563 ATF-521P8 ATF-531P8 ATF-501P8 ATF-511P8 MGA-53543 MGA , Type and Package Q1 ATF-58143 ATF-54143 ATF-541M4 ATF55143 ATF-551M4 ATF-531P8 3/30 3/60 , E-pHEMT FET, MiniPak E-pHEMT FET, LPCC Q2/Q3 MGA-53543 ATF-501P8 ATF-511P8 ATF-521P8 ATF-531P8 , Package Pre-Driver MGA-53543 ATF-501P8 ATF-511P8 ATF-521P8 ATF-531P8 5/54 4.5/280 4.5/200
Agilent Technologies
Original
LNA ku-band microwave transmitter 10GHz AT-64020 micro-X ceramic Package lna fet 900-1700MHz HSCH-9401 ATF-531P 5988-9866EN

AT-41435

Abstract: transistor D 2394 °C Case Temperature) Part Number New ATF-50189 New ATF-501P8 ATF-511P8 ATF-521P8 ATF-531P8
Agilent Technologies
Original
AT-30511 AT-30533 AT-31011 AT-31033 AT-32011 AT-32032 AT-41435 transistor D 2394 ATF pHEMT 5989-0925EN AT-41533 AT-41486
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