AS176-59 AS165-59 10/99A - Datasheet Archive

GaAs IC High Isolation Positive Control SPDT Switch DC3.0 GHz AS176-59 Features MSOP-8 I Positive Voltage Control (0/+3 to

Preliminary GaAs IC High Isolation Positive Control SPDT Switch DC3.0 GHz AS176-59 AS176-59 Features MSOP-8 I Positive Voltage Control (0/+3 to +5 V) 0.0256 (0.65 mm) TYP. I High Isolation (50 dB @ 0.9, 1.9 GHz) 5 I Low DC Power Consumption PIN 1 INDICATOR I Ideal for Cellular, GSM, DCS,PCS, 3G and 2.4 GHz ISM Applications Description The AS176-59 AS176-59 is a GaAs FET IC SPDT switch packaged in a MSOP-8 plastic package for low cost, high isolation commercial applications. Ideal building block for base station dual band applications where synthesizer isolation is critical. Use in conjunction with the AS165-59 AS165-59 SPST switch to meet GSM synthesizer isolation requirements. 0.118 (3.00 mm) ± 0.004 (0.1 mm) SQ. PIN 1 0.012 (0.30 mm) 7.0° 0.038 (0.95 mm) TYP. 0.030 (0.75 mm) 0.017 (0.43 mm) 0.193 (4.90 mm) REF. + 0.006 (0.15 mm) - 0.002 (0.05 mm) 0.007 (0.18 mm) ± 0.005 (0.12 mm) 0.006 (0.15 mm) 0.002 (0.05 mm) 8.0° MAX. 0.028 (0.70 mm) 0.016 (0.40 mm) Electrical Specifications at 25°C (0, +3 V), (0, +5 V) Parameter1 Insertion Condition Loss3 Frequency2 DC1.0 DC2.0 DC2.5 DC3.0 Min. Typ. Max. Unit 0.7 0.8 0.8 0.9 GHz GHz GHz GHz 0.9 1.0 1.1 1.2 dB dB dB dB Isolation4 J1J2/J1J3 J1J2/J1J3 DC1.0 DC2.0 DC2.5 DC3.0 GHz GHz GHz GHz 45/50 41/38 29 22 50/55 45/42 34 27 dB dB dB dB Isolation5 J1J2/J1J3 DC1.0 DC2.0 DC2.5 DC3.0 GHz GHz GHz GHz 45/50 47 36 30 50/55 52 40 35 dB dB dB dB VSWR6 DC2.0 GHz DC3.0 GHz 1.3:1 1.5:1 1.5:1 1.8:1 Typ. Max. Operating Characteristics at 25°C (0, +5 V) Parameter Condition Switching Characteristics7 Intermodulation Intercept Point (IP3) Two-tone Input Power +5 dBm +3 V +5 V Frequency Rise, Fall (10/90% or 90/10% RF) On, Off (50% CTL to 90/10% RF) Video Feedthru Control Voltages Min. Unit 60 100 50 0.53.0 GHz 0.53.0 GHz ns ns mV +41 +45 dBm dBm VLow = 0 to 0.2 V @ 20 µA Max. VHigh = +3 V @ 100 µA Max. to +5 V @ 200 µA Max. VS = VHigh ± 0.2 V 1. All measurements made in a 50 system, unless otherwise specified. 2. DC = 300 kHz. 3. Insertion loss changes by 0.003 dB/°C. 4. Pin 4: N/C. 5. Pin 4: GND. 6. Insertion loss state. 7. Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidth. Alpha Industries, Inc. [781] 935-5150 · Fax [617] 824-4579 · Email sales@alphaind.com · www.alphaind.com Specifications subject to change without notice. 10/99A 10/99A 1 GaAs IC High Isolation Positive Control SPDT Switch DC3.0 GHz AS176-59 AS176-59 Typical Performance Data (0, +5 V) 2.0 -0.2 1.8 -0.4 VSWR (dB) Insertion Loss (dB) 0.0 -0.6 J1J3 -0.8 J1J2 -1.0 1.6 1.4 J1J2 1.2 J1J3 -1.2 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0 2.5 Frequency (GHz) Insertion Loss vs. Frequency VSWR vs. Frequency -25 -30 -30 -35 -35 -40 Isolation (dB) -20 -25 Isolation (dB) -20 J1J3 -45 J1J2 -50 -55 -40 -45 J1J2 -50 -55 -60 J1J3 -60 -65 -65 -70 -70 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0 2.5 Frequency (GHz) Isolation vs. Frequency Pin 4: GND Truth Table Absolute Maximum Ratings V1 V2 0 VHigh J1J2 J1J3 VHigh Isolation Insertion Loss 0 Insertion Loss Isolation Characteristic RF Input Power Value 1 W Max. > 500 MHz 0/+8 V Control Supply Voltage +8 V Control Voltage VHigh = +3 V to +5 V. -0.2 V, +8 V Operating Temperature J2 8 1 7 -65°C to +150°C JC 25°C/W GND 6 2 V2 CBL -40°C to +85°C Storage Temperature Pin Out V1 GND CBL 3 CBL 5 4 N/C J3 CBL = 47 pF. 2 3.0 Frequency (GHz) Isolation vs. Frequency Pin 4: N/C J1 3.0 Frequency (GHz) Alpha Industries, Inc. [781] 935-5150 · Fax [617] 824-4579 · Email sales@alphaind.com · www.alphaind.com Specifications subject to change without notice. 10/99A 10/99A