APTM20HM16FTG APT0502 APT0406 APT0501 - Datasheet Archive

 

Full - Bridge MOSFET Power Module Application · Welding converters · Switched Mode Power Supplies ·

 

APTM20HM16FTG APTM20HM16FTG Full - Bridge MOSFET Power Module Application · Welding converters · Switched Mode Power Supplies · Uninterruptible Power Supplies VBUS Q3 Features · Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged · Kelvin source for easy drive · Very low stray inductance - Symmetrical design - Lead frames for power connections · Internal thermistor for temperature monitoring · High level of integration G3 S1 OUT1 S3 OUT2 Q2 Q4 G2 G4 S2 S4 NTC1 NTC2 0/VBU S G3 G4 S3 S4 VBUS 0/VBUS OUT2 Benefits · Outstanding performance at high frequency operation · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Solderable terminals both for power and signal for easy PCB mounting · Low profile · RoHS Compliant OUT1 S1 S2 NTC2 G1 G2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 200 104 77 416 ±30 19 390 104 50 3000 Unit V A V m W A July, 2006 G1 mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 APT0502 on www.microsemi.com www.microsemi.com 1­6 APTM20HM16FTG APTM20HM16FTG ­ Rev 2 Q1 VDSS = 200V RDSon = 16m typ @ Tj = 25°C ID = 104A @ Tc = 25°C APTM20HM16FTG APTM20HM16FTG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain ­ Source on Resistance Gate Threshold Voltage Gate ­ Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate ­ Source Charge Qgd Gate ­ Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Min VGS = 10V, ID = 52A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz IS VSD dv/dt Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery trr Reverse Recovery Time Qrr Reverse Recovery Charge 16 3 Min VGS = 10V VBus = 100V ID =104A Typ 7220 2330 146 140 Unit Max Unit µA m V nA pF nC 67 32 Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 104A R G = 5 64 116 849 µJ 929 Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 104A, R G = 5 Test Conditions ns 88 Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 104A, R G = 5 936 µJ 986 Min Typ Tj = 25°C Max 104 77 1.3 5 230 Tj = 125°C 450 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 104A IS = - 104A VR = 133V diS/dt = 100A/µs Max 250 1000 19 5 ±100 53 Source - Drain diode ratings and characteristics Symbol Typ Tj = 25°C Tj = 125°C Tj = 25°C 0.9 Tj = 125°C 3.4 Unit A V V/ns ns µC July, 2006 IDSS Characteristic dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 104A di/dt 700A/µs VR VDSS Tj 150°C www.microsemi.com 2­6 APTM20HM16FTG APTM20HM16FTG ­ Rev 2 Symbol APTM20HM16FTG APTM20HM16FTG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 250 200 150 100 TJ=25°C 50 T J=125°C 6.5V 0 0 4 8 12 16 20 24 28 0 VDS, Drain to Source Voltage (V) 1.2 Normalized to V GS=10V @ 52A 1.1 1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 120 RDS(on) vs Drain Current ID, DC Drain Current (A) VGS=10V 1 VGS=20V 0.9 0.8 100 80 60 40 20 0 0 25 50 75 100 125 150 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com July, 2006 RDS(on) Drain to Source ON Resistance TJ=-55°C 0 4­6 APTM20HM16FTG APTM20HM16FTG ­ Rev 2 ID, Drain Current (A) Transfert Characteristics 300 ID, Drain Current (A) 700 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) VGS=10V ID= 52A 2.0 1.5 1.0 0.5 0.0 -50 -25 25 50 75 100 125 150 Maximum Safe Operating Area 1.1 1.0 0.9 0.8 0.7 0.6 limited by RDSon 100 100µs 1ms 10 Single pulse TJ=150°C TC=25°C 10ms 100ms 1 -50 -25 0 25 50 75 100 125 150 1 TC, Case Temperature (°C) VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss 1000 Crss 100 0 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 I D=104A V DS=40V 12 TJ =25°C VDS=100V 10 8 VDS=160V 6 4 2 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 0 20 40 60 80 100 120 140 160 Gate Charge (nC) July, 2006 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 1000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) Threshold Voltage vs Temperature 1.2 ON resistance vs Temperature 2.5 www.microsemi.com 5­6 APTM20HM16FTG APTM20HM16FTG ­ Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM20HM16FTG APTM20HM16FTG APTM20HM16FTG APTM20HM16FTG Delay Times vs Current Rise and Fall times vs Current 160 120 VDS=133V RG=5 T J=125°C L=100µH 60 40 120 tr and tf (ns) t d(on) and td(off) (ns) t d(off) 80 t d(on) 100 80 tr 60 20 0 0 0 25 50 75 100 125 150 175 I D, Drain Current (A) 0 25 50 75 100 125 150 175 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 3 2 VDS=133V RG=5 T J=125°C L=100µH Switching Energy (mJ) 1.5 Eoff Eon 1 0.5 Eoff 0 VDS=133V ID=104A T J=125°C L=100µH 2.5 2 Eoff 1.5 Eon 1 0.5 0 25 50 75 100 125 150 175 0 I D, Drain Current (A) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 250 200 ZCS 150 VDS=133V D=50% RG=5 TJ=125°C TC=75°C 100 50 ZVS Hard switching 0 25 38 50 63 75 5 10 15 20 25 30 35 40 45 50 Gate Resistance (Ohms) 300 Frequency (kHz) tf 40 20 Eon and Eoff (mJ) V DS=133V R G=5 T J=125°C L=100µH 140 100 88 1000 100 TJ =150°C TJ =25°C 10 100 I D, Drain Current (A) 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6­6 APTM20HM16FTG APTM20HM16FTG ­ Rev 2 July, 2006 VSD, Source to Drain Voltage (V)