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APTGT200DA120G Microsemi Corporation Insulated Gate Bipolar Transistor, 280A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP6, 5 PIN visit Digikey Buy

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Part : APTGT200DA120G Supplier : Microsemi Manufacturer : NexGen Digital Stock : 2 Best Price : - Price Each : -
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APTGT200DA120G Datasheet

Part Manufacturer Description PDF Type
APTGT200DA120G Microsemi Boost chopper Fast Trench + Field Stop IGBT Power Module Original

APTGT200DA120G

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: APTGT200DA120G Boost chopper Fast Trench + Field Stop IGBT® Power Module VBUS VCES = 1200V , APTGT200DA120G â'" Rev 1 Symbol VCES APTGT200DA120G All ratings @ Tj = 25°C unless otherwise specified , APTGT200DA120G â'" Rev 1 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGT200DA120G , www.microsemi.com www.microsemi.com 3-5 APTGT200DA120G â'" Rev 1 July, 2006 SP6 Package outline (dimensions in mm) APTGT200DA120G Typical Performance Curve Output Characteristics (VGE =15V) Output Microsemi
Original
Abstract: APTGT200DA120G Boost chopper Fast Trench + Field Stop IGBT3 Power Module VBUS CR1 OUT , www.microsemi.com www.microsemi.com 1-6 APTGT200DA120G â'" Rev 2 October, 2012 Symbol VCES APTGT200DA120G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol , www.microsemi.com Max 350 600 Unit V µA A 2.1 V ns µC mJ 2-6 APTGT200DA120G â'" Rev 2 October, 2012 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGT200DA120G Microsemi
Original
APT0502

APT0502

Abstract: APT0601 APTGT200DA120G Boost chopper Fast Trench + Field Stop IGBT® Power Module VBUS VCES = 1200V , APTGT200DA120G ­ Rev 1 OUT Features · Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low , integration APTGT200DA120G All ratings @ Tj = 25°C unless otherwise specified ICES Zero Gate , Characteristic mJ 2-5 APTGT200DA120G ­ Rev 1 Electrical Characteristics APTGT200DA120G Thermal , www.microsemi.com www.microsemi.com 3-5 APTGT200DA120G ­ Rev 1 July, 2006 SP6 Package outline
Microsemi
Original
APT0601

sot-227 footprint

Abstract: VRF2933 APTGT150DA120D3G APTGT150DA120TG APTGT200DA120G APTGT200DA120D3G APTGT300DA120G APTGT300DA120D3G
Microsemi
Original
sot-227 footprint VRF2933 APT35GP120JDQ2 ARF1511 DRF1200 SP6-P

smps 1000W

Abstract: 600V 300A igbt dc to dc boost converter APTGT150DA120D1G APTGT150DA120TG APTGT200DA120G APTGT200DA120D3G APTGT300DA120G APTGT300DA120D3G
Microsemi
Original
smps 1000W 600V 300A igbt dc to dc boost converter DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 10F-A

SP6-P

Abstract: N-channel MOSFET 800v 50a to-247 APTGT100DA120TG APTGT150DA120G APTGT150DA120D1G N/A N/A APTGT150DA120TG APTGT200DA120G APTGT200DA120D3G
Microsemi
Original
N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN 2000W mosfet power inverter IGBT triple modules 100A APTES80DA120C3G APT30DQ60BCTG