APTGT100A120T APT0406 - Datasheet Archive

 

Phase leg Fast Trench + Field Stop IGBT® Power Module G1 E1 OUT Q2 G2 E2 0/VBU S NTC1 G2 OUT E2 VBUS OUT 0/VBUS E1 E2 NTC2 G1

 

APTGT100A120T APTGT100A120T Phase leg Fast Trench + Field Stop IGBT® Power Module G1 E1 OUT Q2 G2 E2 0/VBU S NTC1 G2 OUT E2 VBUS OUT 0/VBUS E1 E2 NTC2 G1 G2 NTC1 Features · Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated · Kelvin emitter for easy drive · Very low stray inductance - Symmetrical design - Lead frames for power connections · High level of integration · Internal thermistor for temperature monitoring Benefits · Stable temperature behavior · Very rugged · Solderable terminals for easy PCB mounting · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Easy paralleling due to positive TC of VCEsat · Low profile Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate ­ Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1200 140 100 200 ±20 480 Tj = 125°C 200A @ 1100V TC = 25°C TC = 80°C TC = 25°C Unit V A May, 2005 Q1 Application · Welding converters · Switched Mode Power Supplies · Uninterruptible Power Supplies · Motor control V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website ­ http://www.advancedpower.com 1-5 APTGT100A120T APTGT100A120T ­ Rev 0 NTC2 VBUS VCES = 1200V IC = 100A @ Tc = 80°C APTGT100A120T APTGT100A120T All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate ­ Emitter Leakage Current Dynamic Characteristics Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Turn-on Delay Time Rise Time Td(off) Tf Eon Eoff Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 100A Tj = 125°C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz 1.4 5.0 Min Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 100A R G = 3.9 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 100A R G = 3.9 Test Conditions Maximum Reverse Leakage Current VR=1200V IF(A V) Maximum Average Forward Current 50% duty cycle VF Diode Forward Voltage IF = 100A VGE = 0V trr Reverse Recovery Time IF = 100A VR = 600V Qrr Reverse Recovery Charge di/dt =2000A/µs 1.7 2.0 5.8 Typ 7200 400 300 260 30 420 Max Unit 500 2.1 µA 6.5 400 V nA Max Unit V pF ns 70 290 50 ns 520 90 10 10 Min 1200 Typ Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C 100 1.6 1.6 Tj = 25°C 170 Tj = 125°C Tj = 25°C Tj = 125°C 280 9 18 mJ Max 250 500 Unit V µA A 2.1 V ns µC May, 2005 IRM Typ APT website ­ http://www.advancedpower.com 2-5 APTGT100A120T APTGT100A120T ­ Rev 0 Symbol Cies Coes Cres Td(on) Tr Td(off) Min APTGT100A120T APTGT100A120T Temperature sensor NTC (see application note APT0406 APT0406 on www.advancedpower.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = Min R 25 Unit k K Min Typ Max 0.26 0.48 Unit T: Thermistor temperature Symbol Characteristic VISOL TJ TSTG TC Torque Wt Max 1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25 Thermal and package characteristics RthJC Typ 50 3952 IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol