APT83GU30B APT83GU30S MIL-STD-750 JESD24-1 00663F 0106F APT15DS30

APT83GU30S 300V ® POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using

APT83GU30B APT83GU30B APT83GU30S APT83GU30S 300V ® POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. · Low Conduction Loss D3PAK C G G C · SSOA rated E E C · Low Gate Charge G · Ultrafast Tail Current shutoff E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT83GU30B APT83GU30B_S VCES Collector-Emitter Voltage 300 VGE Gate-Emitter Voltage ±20 VGEM Gate-Emitter Voltage Transient ±30 IC1 Continuous Collector Current @ IC2 Continuous Collector Current @ TC = 100°C ICM Pulsed Collector Current UNIT SSOA PD TJ,TSTG TL 1 7 Volts 100 TC = 25°C Amps 83 295 @ TC = 150°C 295A @ 300V Switching Safe Operating Area @ TJ = 150°C Watts 543 Total Power Dissipation -55 to 150 Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) 300 VGE(TH) Gate Threshold Voltage I CES I GES MAX 4.5 6 Collector-Emitter On Voltage (VGE = 15V, I C = 45A, Tj = 25°C) 1.5 2.0 Collector-Emitter On Voltage (VGE = 15V, I C = 45A, Tj = 125°C) 1.5 3 (VCE = VGE, I C = 1mA, Tj = 25°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) 250 2 Gate-Emitter Leakage Current (VGE = ±20V) Volts µA 2500 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT nA 2-2004 BVCES VCE(ON) TYP Rev A MIN 050-7465 Characteristic / Test Conditions APT83GU30B APT83GU30B_S DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions VGE = 0V, VCE = 25V 406 Reverse Transfer Capacitance f = 1 MHz Gate Charge VGE = 15V 7.0 144 VCE = 150V 29 UNIT 31 Gate-to-Emitter Plateau Voltage MAX 4385 44 Input Capacitance Coes Output Capacitance Cres VGEP Qge TYP Capacitance Cies Qg MIN Total Gate Charge 3 Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge I C = 45A SSOA Switching Safe Operating Area TJ = 150°C, R G = 5, VGE = pF V nC 295 A 15V, L = 100µH,VCE = 300V td(on) tr td(off) tf Inductive Switching (25°C) VCC = 200V Current Fall Time Eon2 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy td(on) Turn-on Delay Time tf Eon1 Eon2 Eoff µJ 354 Inductive Switching (125°C) VCC = 200V 69 VGE = 15V 355 I C = 45A 226 Turn-off Delay Time Current Fall Time Turn-off Switching Energy 189 6 29 R G = 20 4 Turn-on Switching Energy (Diode) ns TBD TJ = +25°C 5 Current Rise Time Turn-on Switching Energy 29 R G = 20 4 Turn-on Switching Energy td(off) 122 Turn-off Delay Time Eon1 tr 308 I C = 45A Current Rise Time 69 VGE = 15V Turn-on Delay Time 5 ns TBD TJ = +125°C 287 6 µJ 503 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RJC Junction to Case (IGBT) 0.23 RJC Junction to Case (DIODE) N/A Package Weight 5.90 WT UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1 JESD24-1. (See Figures 21, 23.) 7 Countinous current limited by package lead temperature. 050-7465 Rev A 2-2004 APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES APT83GU30B APT83GU30B_S 60 60 VGE = 15V. 250µs PULSE TEST