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APT80GA60B Microsemi Corporation Insulated Gate Bipolar Transistor, 143A I(C), 600V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN visit Digikey Buy

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Part : APT80GA60B Supplier : Microsemi Manufacturer : NexGen Digital Stock : 314 Best Price : - Price Each : -
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APT80GA60B Datasheet

Part Manufacturer Description PDF Type
APT80GA60B Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 80; Original

APT80GA60B

Catalog Datasheet MFG & Type PDF Document Tags

power PFC

Abstract: MIC4452 APT80GA60B 600V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT , high frequency. ® FEATURES APT80GA60B G C E Single die IGBT TYPICAL APPLICATIONS , (off) tf APT80GA60B TJ = 25°C unless otherwise specified Min Typ Capacitance VGE = 0V
Microsemi
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MIC4452 power PFC phase shift resistance welding JESD24-1

APT80GA60B

Abstract: APT80GA60S Safe Operating Area Turn-On Delay Time APT80GA60B_S TJ = 25°C unless otherwise specified Test , , the specifications and information contained herein. Typical Performance Curves APT80GA60B_S , 100H APT80GA60B_S 300 30 80 VGE =15V,TJ=125°C 200 150 VGE =15V,TJ=25°C 100 50 , Energy Losses vs Junction Temperature Typical Performance Curves APT80GA60B_S 1000 Cies IC , 0 052-6323 Rev C ZJC, THERMAL IMPEDANCE (°C/W) 0.25 APT80GA60B_S 10% Gate Voltage
Microsemi
Original
APT80GA60S

APT80GA60B

Abstract: APT80GA60S - Collector Charge Switching Safe Operating Area Turn-On Delay Time APT80GA60B_S TJ = 25°C unless , Performance Curves APT80GA60B_S 150 300 TJ= 125°C = 15V 125 TJ= 55°C TJ= 150°C 100 TJ , 25°C, or 125°C RG = 4.7 L = 100H APT80GA60B_S 300 30 80 VGE =15V,TJ=125°C 200 , Performance Curves APT80GA60B_S 1000 Cies IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) 10000 , - 2009 FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL APT80GA60B_S 10% Gate Voltage TJ
Microsemi
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Abstract: APT80GA60B_S TJ = 25° unless otherwise specifi ed C Test Conditions Min Typ Capacitance VGE = , specifications and information contained herein. Typical Performance Curves APT80GA60B_S 150 300 TJ , ) VCE = 400V TJ = 25°C, or 125°C RG = 4.7Ω L = 100μH APT80GA60B_S 300 30 VGE = 15V , APT80GA60B_S 1000 Cies IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) 10000 100 1000 Coes 100 , Duration 052-6323 Rev D 6 - 2011 Z JC, THERMAL IMPEDANCE (°C/W) 0.25 APT80GA60B_S 10% Gate Microsemi
Original
Abstract: TJ = +125°C 23 27 158 78 840 751 21 31 194 132 1275 1112 240 APT80GA60B_S Min Typ 6390 580 63 , contained herein. 052-6323 Rev D 6 - 2011 Typical Performance Curves 150 V GE APT80GA60B_S , °C RG = 4.7 L = 100H 300 APT80GA60B_S td(ON), TURN-ON DELAY TIME (ns) VGE = 15V 250 VGE , Performance Curves 10000 1000 Cies IC, COLLECTOR CURRENT (A) APT80GA60B_S C, CAPACITANCE (pF) 100 , Pulse Duration 052-6323 Rev D 6 - 2011 APT80GA60B_S 10% Gate Voltage td(on) 90% Collector Microsemi
Original

single phase inverter IGBT

Abstract: wind inverter MOS 8 IGBT APT60DQ60BG 600 2.0V TO-247 2.8 APT80GA60B MOS 8 IGBT APT60DQ60BG
Microsemi
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APT60N60BCSG single phase inverter IGBT wind inverter Thunderbolt buck 800v igbt single phase inverter mosfet single phase full bridge inverter 50/60H 00E-07 00E-06 50E-06

SOT-227 lead frame

Abstract: 5kw smps full bridge S.M.P.S APT54GA60B APT68GA60B APT80GA60B APT102GA60B2 TO-220 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO
Microsemi
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SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG Fast Recovery Rectifiers mx gp 043 5kw SMPS full bridge MIL-PRF-19500 DO-41 RT100KP

smps 1000W

Abstract: 600V 300A igbt dc to dc boost converter APT36GA60B APT44GA60B APT54GA60B APT68GA60B APT80GA60B APT102GA60B2 APT27GA90K APT35GA90B APT43GA90B
Microsemi
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smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 10F-A

SP6-P

Abstract: N-channel MOSFET 800v 50a to-247 APT68GA60B APT80GA60B APT102GA60B2 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO-247 or
Microsemi
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N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN 2000W mosfet power inverter IGBT triple modules 100A APTES80DA120C3G APT30DQ60BCTG

VRF2933FL

Abstract: VRF164FL Gate-Emitter Charge Qgc SSOA td(on) tr td(off) tf APT80GA60B2D40_LD40 TJ = 25°C unless otherwise , Characteristic / Test Conditions APT80GA60B2D40_LD40 Maximum Average Forward Current (TC = 111°C, Duty , 160 20 TJ = -55°C 0 APT80GA60B2D40_LD40 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure , TJ = 25°C unless otherwise specified APT80GA60B2D40_LD40 Vr diF /dt Adjust +18V , APT80GA60B2D40 APT80GA60LD40 600V APT80GA60B2D40 High Speed PT IGBT POWER MOS 8® is a high
Microsemi
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VRF2933FL VRF164FL Non - Isolated Buck, application ARF463AP1 MS5-001-14