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APT68GA60B2D40 Microsemi Corporation Insulated Gate Bipolar Transistor, 121A I(C), 600V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, TMAX-3 visit Digikey Buy
APT68GA60B Microsemi Corporation Insulated Gate Bipolar Transistor, 121A I(C), 600V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN visit Digikey Buy

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Part : APT68GA60B Supplier : Microsemi Manufacturer : NexGen Digital Stock : 73 Best Price : - Price Each : -
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APT68GA60B Datasheet

Part Manufacturer Description PDF Type
APT68GA60B Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 68; Original
APT68GA60B2D40 Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2.5; IC (A): 68; Original

APT68GA60B

Catalog Datasheet MFG & Type PDF Document Tags

APT68GA60B

Abstract: IGBT microsemi APT68GA60B 600V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT , high frequency. ® FEATURES APT68GA60B G C E Single die IGBT TYPICAL APPLICATIONS , ) tr td(off) tf APT68GA60B TJ = 25°C unless otherwise specified Min Typ Capacitance VGE
Microsemi
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MIC4452 IGBT microsemi JESD24-1
Abstract: +125°C 202 21 27 133 88 715 607 20 26 175 129 1117 1025 APT68GA60B_S Typ 5230 526 59 198 32 66 A nC , . 052-6326 Rev B 2 - 2009 Typical Performance Curves 120 100 80 60 40 20 0 V GE APT68GA60B_S 350 , 100H 250 APT68GA60B_S td(ON), TURN-ON DELAY TIME (ns) 200 VGE =15V,TJ=125°C 150 100 , , COLLECTOR CURRENT (A) 1000 APT68GA60B_S C, CAPACITANCE (pF) 100 1000 Coes 100 Cres 10 10 1 , THERMAL IMPEDANCE MODEL ZEXT .0584 .1809 052-6326 Rev B 2 - 2009 APT68GA60B_S 10% Gate Microsemi
Original
APT68GA60S

APT68GA60B

Abstract: APT68GA60S - Collector Charge Switching Safe Operating Area Turn-On Delay Time APT68GA60B_S TJ = 25°C unless , CURRENT (A) GE APT68GA60B_S 350 Typical Performance Curves 25 td(OFF), TURN-OFF DELAY TIME , = 15V 20 15 10 5 0 0 20 APT68GA60B_S 250 30 40 60 200 VGE =15V,TJ , , Switching Energy Losses vs Junction Temperature Typical Performance Curves APT68GA60B_S 1000 Cies , 052-6326 Rev C ZJC, THERMAL IMPEDANCE (°C/W) 0.30 APT68GA60B_S 10% Gate Voltage TJ = 125
Microsemi
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Abstract: APT68GA60B_S TJ = 25° unless otherwise specifi ed C Test Conditions Min Typ Capacitance VGE = , . Typical Performance Curves APT68GA60B_S 350 120 GE = 15V TJ= 125°C 100 TJ= 150 , ¼H VGE = 15V 20 15 10 5 0 0 20 APT68GA60B_S 250 30 40 60 200 VGE , APT68GA60B_S 1000 Cies IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) 10000 1000 Coes 100 , Pulse Duration 052-6326 Rev D 6 - 2011 Z JC, THERMAL IMPEDANCE (°C/W) 0.30 APT68GA60B_S Microsemi
Original

100c1a

Abstract: +125°C 202 21 27 133 88 715 607 20 26 175 129 1117 1025 APT68GA60B_S Typ 5230 526 59 198 32 66 A nC , . 052-6326 Rev D 6 - 2011 Typical Performance Curves 120 V GE APT68GA60B_S 350 300 TJ= 150°C IC , 250 APT68GA60B_S td(ON), TURN-ON DELAY TIME (ns) 25 200 VGE =15V,TJ=125°C 20 150 , APT68GA60B_S C, CAPACITANCE (pF) 100 1000 Coes 100 Cres 10 1 10 0 100 200 300 400 500 VCE , , Junction-To-Case vs Pulse Duration 052-6326 Rev D 6 - 2011 APT68GA60B_S 10% Gate Voltage td(on) 90% tr V
Microsemi
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100c1a

single phase inverter IGBT

Abstract: wind inverter Output Power (kW) APT60N60BCSG CoolMOS APT40DQ60BG 600 45m TO-247 2.5 APT68GA60B
Microsemi
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single phase inverter IGBT wind inverter Thunderbolt buck 800v igbt single phase inverter mosfet single phase full bridge inverter 50/60H 00E-07 00E-06 50E-06

smps 1000W

Abstract: 600V 300A igbt dc to dc boost converter APT54GA60B APT68GA60B APT80GA60B APT102GA60B2 TO-220 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO
Microsemi
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smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 10F-A

SOT-227 lead frame

Abstract: 5kw smps full bridge S.M.P.S APT36GA60B APT44GA60B APT54GA60B APT68GA60B APT80GA60B APT102GA60B2 APT27GA90K APT35GA90B APT43GA90B , APT68GA60B2D40 APT80GA60LD40 APT27GA90BD15 APT35GA90BD15 APT43GA90BD30 APT46GA90JD40 APT64GA90B2D30 APT80GA90LD40
Microsemi
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SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG Fast Recovery Rectifiers mx gp 043 5kw SMPS full bridge MIL-PRF-19500 DO-41 RT100KP

SP6-P

Abstract: N-channel MOSFET 800v 50a to-247 APT68GA60B APT80GA60B APT102GA60B2 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO-247 or , APT68GA60B2D40 APT80GA60LD40 TO-247 or D3 TO-247 or D3 TO-247 or D3 ISOTOP® T-MAX® or TO-264 TO
Microsemi
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N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN 2000W mosfet power inverter IGBT triple modules 100A APTES80DA120C3G APT30DQ60BCTG

VRF2933FL

Abstract: VRF164FL APT68GA60LD40 APT68GA60B2D40 600V APT68GA60LD40 High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide , , even APT68GA60B2D40 when switching at high frequency. TO -2 47 Combi (IGBT and Diode
Microsemi
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VRF2933FL VRF164FL Non - Isolated Buck, application ARF463AP1 MS5-001-14

LE79Q2281

Abstract: PLAD15KP SSOA td(on) tr td(off) tf APT68GA60B2D40_LD40 TJ = 25°C unless otherwise specified Typ , / Test Conditions APT68GA60B2D40_LD40 Maximum Average Forward Current (TC = 111°C, Duty Cycle = 0.5 , -55°C 0 APT68GA60B2D40_LD40 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction , otherwise specified APT68GA60B2D40_LD40 Vr diF /dt Adjust +18V APT40GT60BR 0V D.U.T. 30H , APT68GA60B2D40 APT68GA60LD40 600V APT68GA60B2D40 High Speed PT IGBT POWER MOS 8® is a high
Microsemi
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LE79Q2281 IC ZL70572 STK 084 power amplifier transistor SI 6822 LED Driver aplications GC4600

APT68GA60LD40

Abstract: APT68GA60B2D40 APT68GA60LD40 APT68GA60B2D40 600V High Speed PT IGBT APT68GA60LD40 POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent , , even APT68GA60B2D40 when switching at high frequency. TO -24 7 Combi (IGBT and Diode
Microsemi
Original

400v 20A ultra fast recovery diode

Abstract: TO-264 Jedec package outline APT68GA60LD40 APT68GA60B2D40 600V APT68GA60LD40 High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide , , even APT68GA60B2D40 when switching at high frequency. TO -24 7 Combi (IGBT and Diode
Microsemi
Original
400v 20A ultra fast recovery diode TO-264 Jedec package outline 80A bridge rectifier