NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| APT60M80JVR | Advanced Power Technology | N-Channel enhancement mode power MOSFET |
2 pages, |
Original |  |
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| APT60M80JVR | Microsemi Corporation | Power MOS V MOSFET |
4 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: APT60M80JVR 600V 55A 0.080 POWER MOS V ® S S Power MOS V® is a new generation of high , RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. APT60M80JVR UNIT , Rev A 8-2002 Symbol DYNAMIC CHARACTERISTICS Symbol APT60M80JVR Characteristic Test , Performance Curves APT60M80JVR 180 6.5V Graph Deleted ID, DRAIN CURRENT (AMPERES) 160 15 &10V , APT60M80JVR 70,000 220 100 100uS Ciss C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES ... | Original |
4 pages, |
l 7251 3.1 l 7251 APT60M80JVR APT60M80JVR abstract |
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| Abstract: APT60M80JVR 600V 55A 0.080W POWER MOS V ® S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds , RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. APT60M80JVR UNIT , 050-7251 Rev - 12-2001 Symbol DYNAMIC CHARACTERISTICS Symbol APT60M80JVR Characteristic ... | Original |
2 pages, |
l 7251 3.1 SOT-227 Package APT60M80JVR APT60M80JVR abstract |
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| Ixys Corp. Part | Ixys Description | Industry Part | Manufacturer | Description | Type |
| IXFN70N60Q2 Buy | VDSS (V)=600, ID@TC=25°C(A)=70, RDS(on) max @TJ=25°C(Ohm)=0.0800 | APT60M80JVR Buy | Advanced Power Technology | VDSS (V)=600, ID@TC=25°C(A)=55, RDS(on) max @TJ=25°C(Ohm)=0.0800 | Close |
| IXKN75N60C Buy | VDSS (V)=600, ID@TC=25°C(A)=75, RDS(on) max @TJ=25°C(Ohm)=0.0360 | APT60M80JVR Buy | Advanced Power Technology | VDSS (V)=600, ID@TC=25°C(A)=55, RDS(on) max @TJ=25°C(Ohm)=0.0800 | Close |