NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| APT6015LVFR | Advanced Power Technology | High voltage N-Channel enhancement mode power MOSFET |
4 pages, |
Original |  |
|
|||||
| APT6015LVFR | Microsemi Corporation | Power MOS V FREDFET |
4 pages, |
Original | |
|
|||||
| APT6015LVFR | N/A | Power MOS V, 600V 38A, MOS-FET N-Channel enhanced |
4 pages, |
Original | |
|
|||||
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: APT6015LVFR 600V POWER MOS V ® 38A 0.150W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect , ID All Ratings: TC = 25°C unless otherwise specified. APT6015LVFR Parameter UNIT Y R A , 050-5945 Rev- 1-2000 Symbol DYNAMIC CHARACTERISTICS Symbol APT6015LVFR Test Conditions , THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT6015LVFR 100 VGS=6V, 7V, 10V & 15V 5.5V ... | Original |
4 pages, |
APT6015LVFR APT6015LVFR abstract |
|
|||
| Abstract: APT6015B2VFR APT6015B2VFR APT6015LVFR 0.150 600V 38A POWER MOS V® FREDFET B2VFR T-MAXTM Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. · Fast Recovery Body Diode LVFR · Avalanche Energy Rated · Lower Leakage TO-264 · T-MAXTM or TO-264 Package D G ... | Original |
4 pages, |
APT6015B2VFR APT6015LVFR APT6015B2VFR abstract |
|
|||
| Abstract: APT6015B2VFR APT6015B2VFR APT6015LVFR 0.150 600V 38A POWER MOS V® FREDFET B2VFR T-MAXTM Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. · Fast Recovery Body Diode LVFR · Avalanche Energy Rated · Lower Leakage TO-264 · T-MAXTM or TO-264 Package D G ... | Original |
4 pages, |
APT6015LVFR APT6015B2VFR APT6015B2VFR abstract |
|
|||
| Abstract: 520 625 7500 8800 2500 3000 250 250 APT6015LVFR APT6011LVFR APT6011LVFR 500 0.100 0.085 ... | Original |
23 pages, |
h a 431 transistor APT10086BLC APT1208 APT12080LVR APT5015BVR APT5017BLC APT5017BVFR APT5040CN APT8065 ARF442 ARF443 APT1001RBVR 5017BVR 5020BN ISO9001 MIL-PRF-19500 ISO9001 abstract |
|
|||
| Abstract: APT100S20B APT8024LVFR APT8024LVFR APT6015LVFR APT6011LVFR APT6011LVFR APT5010LVFR APT5010LVFR APT50M85LVFR APT50M85LVFR APT50M80LVFR APT50M80LVFR APT30M40LVFR APT30M40LVFR APT20M22LVFR APT20M22LVFR ... | Original |
24 pages, |
THOMSON IGBT APT10078BLL APT10090BLL APT1201R4BLL APT12040 APT1208 APT5014BLL APT50M50JFLL APT6029BLL APT6038BLL mj 1504 transistor equivalent k1 4 3n APT1004 ARF443 ISO9001 MIL-PRF-19500 ISO9001 abstract |
|
|||
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| FQL40N50 | FQL40N50 Buy | APT6015LVFR Buy | Advanced Power Technology | Close | Power MOSFET | 500V N-Channel QFET |
| Ixys Corp. Part | Ixys Description | Industry Part | Manufacturer | Description | Type |
| IXFK48N60P Buy | VDSS (V)=600, ID@TC=25°C(A)=48, RDS(on) max @TJ=25°C(Ohm)=0.1400 | APT6015LVFR Buy | Advanced Power Technology | VDSS (V)=600, ID@TC=25°C(A)=38, RDS(on) max @TJ=25°C(Ohm)=0.1500 | Close |