APT56M60B2 APT56M60L 10E-7/VDS 60E-8/VDS 72E-10 MIC4452 - Datasheet Archive

 

APT56M60L 600V, 60A, 0.11 Max N-Channel MOSFET Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. A

 

APT56M60B2 APT56M60B2 APT56M60L APT56M60L 600V, 60A, 0.11 Max N-Channel MOSFET Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. T-MaxTM TO-264 APT56M60B2 APT56M60B2 APT56M60L APT56M60L D Single die MOSFET G S TYPICAL APPLICATIONS FEATURES · Fast switching with low EMI/RFI · PFC and other boost converter · Low RDS(on) · Buck converter · Ultra low Crss for improved noise immunity · Two switch forward (asymmetrical bridge) · Low gate charge · Single switch forward · Avalanche energy rated · Flyback · RoHS compliant · Inverters Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 60 Continuous Drain Current @ TC = 100°C 38 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 1580 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 28 A 1 210 Thermal and Mechanical Characteristics Symbol Min Characteristic Typ Max Unit W PD Total Power Dissipation @ TC = 25°C 1040 RJC Junction to Case Thermal Resistance 0.12 RCS Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range -55 150 °C Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight 0.22 oz 6.2 g 10 Torque in·lbf 1.1 N·m Mounting Torque ( TO-264 Package), 4-40 or M3 screw MicrosemiWebsite-http://www.microsemi.com 04-2009 WT 300 Rev E TL 050-8086 TJ,TSTG °C/W 0.11 Static Characteristics TJ = 25°C unless otherwise specified Test Conditions Symbol Drain-Source Breakdown Voltage VBR(DSS)/TJ Breakdown Voltage Temperature Coefficient RDS(on) Drain-Source On Resistance VGS(th) 3 VDS = 600V Symbol Ciss 100 500 ±100 Min Test Conditions VDS = 50V, ID = 28A Input Capacitance Reverse Transfer Capacitance Coss 0.11 5 Unit V V/°C V mV/°C µA nA TJ = 25°C unless otherwise specified Forward Transconductance Crss 0.57 0.09 4 -10 VGS = ±30V Parameter gfs Max TJ = 125°C Gate-Source Leakage Current Dynamic Characteristics Typ TJ = 25°C VGS = 0V Zero Gate Voltage Drain Current IGSS 3 VGS = VDS, ID = 2.5mA Threshold Voltage Temperature Coefficient IDSS 600 VGS = 10V, ID = 28A Gate-Source Threshold Voltage VGS(th)/TJ Min VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA Parameter VBR(DSS) APT56M60B2 APT56M60B2_L Output Capacitance 4 Effective Output Capacitance, Charge Related Co(er) 5 Max 55 11300 115 1040 VGS = 0V, VDS = 25V f = 1MHz Co(cr) Typ Effective Output Capacitance, Energy Related Unit S pF 550 VGS = 0V, VDS = 0V to 400V Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tr td(off) tf Current Rise Time Turn-Off Delay Time 285 280 60 120 65 75 190 60 VGS = 0 to 10V, ID = 28A, VDS = 300V Resistive Switching VDD = 400V, ID = 28A RG = 2.2 6 , VGG = 15V Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge dv/dt Peak Recovery dv/dt Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) Min Typ D Max Unit 60 A G 210 S ISD = 28A, TJ = 25°C, VGS = 0V ISD = 28A 3 diSD/dt = 100A/µs, TJ = 25°C ISD 28A, di/dt 1000A/µs, VDD = 100V, TJ = 125°C 1.0 745 19 V ns µC 8 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 4.03mH, RG = 25, IAS = 28A. 04-2009 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -1.10E-7/VDS 10E-7/VDS^2 + 4.60E-8/VDS 60E-8/VDS + 1.72E-10 72E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452 MIC4452) 050-8086 Rev E Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT56M60B2 APT56M60B2_L 90 250 V GS = 10V T = 125°C J 80 V TJ = -55°C ID, DRIAN CURRENT (A) 150 TJ = 25°C 100 50 TJ = 150°C 60 6V 50 40 30 5.5V 20 10 TJ = 125°C 0 0 0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 5V 4.5V 0 NORMALIZED TO VDS> ID(ON) x RDS(ON) MAX. 180 2.5 250µSEC. PULSE TEST @