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APT54GA60BD30 Microsemi Corporation Insulated Gate Bipolar Transistor, 96A I(C), 600V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN visit Digikey Buy

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Part : APT54GA60BD30 Supplier : Microsemi Manufacturer : Richardson RFPD Stock : - Best Price : $4.61 Price Each : $4.73
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APT54GA60BD30 Datasheet

Part Manufacturer Description PDF Type
APT54GA60BD30 Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 54; Original

APT54GA60BD30

Catalog Datasheet MFG & Type PDF Document Tags

600v 30a IGBT

Abstract: Fast Recovery Bridge Rectifier, 60A, 600V APT54GA60BD30 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through , technologies. Low APT54GA60BD30 gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise , td(on) tr td(off) tf APT54GA60BD30 TJ = 25°C unless otherwise specified Typ 350 f = , otherwise specified. MAXIMUM RATINGS Symbol Characteristic / Test Conditions APT54GA60BD30 Maximum , APT54GA60BD30 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage
Microsemi
Original
600v 30a IGBT Fast Recovery Bridge Rectifier, 60A, 600V APT30GT60BR MIC4452

APT54GA60B

Abstract: APT54GA60BD30 APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30 -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies , - APT54GA60BD30 ing in low EMI, even when switching at high frequency. Combi (IGBT and Diode) ® FEATURES
Microsemi
Original
APT54GA60B SD30
Abstract: APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBT ® TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30 -24 7 achieved through leading technology silicon design and lifetime control processes. A D 3 PAK reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies , - APT54GA60BD30 ing in low EMI, even when switching at high frequency. Combi (IGBT and Diode) FEATURES Microsemi
Original

APT54GA60B

Abstract: APT54GA60BD30 APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30 -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies , - APT54GA60BD30 ing in low EMI, even when switching at high frequency. Combi (IGBT and Diode) ® FEATURES
Microsemi
Original
Abstract: APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30 -24 7 achieved through leading technology silicon design and lifetime control processes. A D 3 PAK reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide , capacitance of the poly-silicone gate structure help control di/dt during switching, result- APT54GA60BD30 ing Microsemi
Original

SOT-227 lead frame

Abstract: 5kw smps full bridge S.M.P.S 23 36 27 31 APT28GA60BD15 APT36GA60BD15 APT44GA60BD30 APT47GA60JD40 APT54GA60BD30
Microsemi
Original
SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG Fast Recovery Rectifiers mx gp 043 5kw SMPS full bridge MIL-PRF-19500 DO-41 RT100KP

smps 1000W

Abstract: 600V 300A igbt dc to dc boost converter 27 31 APT28GA60BD15 APT36GA60BD15 APT44GA60BD30 APT47GA60JD40 APT54GA60BD30 APT60GA60JD60
Microsemi
Original
smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 10F-A

SP6-P

Abstract: N-channel MOSFET 800v 50a to-247 -247 or D3 TO-247 or D3 TO-247 or D3 APT36GA60BD15 APT44GA60BD30 APT54GA60BD30 APT60GA60JD60
Microsemi
Original
N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN 2000W mosfet power inverter IGBT triple modules 100A APTES80DA120C3G APT30DQ60BCTG