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APT54GA60B Microsemi Corporation Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 54;
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6 pages,
210.32 Kb

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APT54GA60BD30 Microsemi Corporation Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 54;
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9 pages,
236.77 Kb

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Catalog Search Results

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Abstract: APT54GA60B 600V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT , high frequency. ® FEATURES APT54GA60B G C E Single die IGBT TYPICAL APPLICATIONS , (off) tf APT54GA60B TJ = 25°C unless otherwise specified Min Typ Capacitance VGE = 0V ... Original
datasheet

2 pages,
115.36 Kb

MIC4452 APT54GA60B APT54GA60B abstract
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Abstract: (off) tf Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time APT54GA60B_S , Typical Performance Curves APT54GA60B_S 100 75 TJ= 125°C 50 25 0 2 4 6 8V , DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) APT54GA60B_S 200 21 19 VGE = 15V 18 17 , Junction Temperature Typical Performance Curves APT54GA60B_S 10000 500 IC, COLLECTOR , 052-6328 Rev D ZJC, THERMAL IMPEDANCE (°C/W) 0.35 APT54GA60B_S 10% Gate Voltage TJ = 125°C ... Original
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6 pages,
210.32 Kb

MIC4452 APT54GA60S APT54GA60B APT54GA60B abstract
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Abstract: APT54GA60B APT68GA60B APT68GA60B APT80GA60B APT80GA60B APT102GA60B2 APT102GA60B2 TO-220 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO-247 , 23 36 27 31 APT28GA60BD15 APT28GA60BD15 APT36GA60BD15 APT36GA60BD15 APT44GA60BD30 APT44GA60BD30 APT47GA60JD40 APT47GA60JD40 APT54GA60BD30 ... Original
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36 pages,
3034.92 Kb

3000w smps APTGT50DH120TG Full bridge SMPS sot-227 footprint ARF1500 smps 2000W ARF476FL SP6-P ARF463AG APT30GT60BRG 1000w inverter MOSFET VRF2933 1000W solar inverter DRF1400 datasheet abstract
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Abstract: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi's High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic contamination. These and other defects lead to early life failures, and screening for them is particularly important in large die devices. The stress tests that constitute Microsemi's high-reliabil ... Original
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45 pages,
2472.73 Kb

power 3000w PFC 3000w smps 450 watt smps Design 5kw smps full bridge S.M.P.S DIODE TVS 170v Fast Recovery Rectifiers mx gp 043 igbt 600v, dual INFINEON TVS diode process Microsemi Catalog 110v smps circuits 1500w tvs diode SMD DO215AA datasheet abstract
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Abstract: HS1838 APT35DL120HJ APT36GA60B APT36GA60B APT44GA60B APT44GA60B APT54GA60B APT68GA60B APT68GA60B APT80GA60B APT80GA60B APT102GA60B2 APT102GA60B2 APT27GA90K APT27GA90K APT35GA90B APT35GA90B APT43GA90B APT43GA90B , 27 31 APT28GA60BD15 APT28GA60BD15 APT36GA60BD15 APT36GA60BD15 APT44GA60BD30 APT44GA60BD30 APT47GA60JD40 APT47GA60JD40 APT54GA60BD30 APT60GA60JD60 APT60GA60JD60 ... Original
datasheet

40 pages,
2007.54 Kb

APT100S20B 500w half bridge smps 2000w pfc igbt buck converter 2000w DRF1400 FAST RECOVERY DIODE dual 20a 600 to247 SP6-P SMPS 1000w IGBT REFERENCE DESIGN silicon carbide JFET SiC JFET 1000w Induction motor inverter MOSFET resonant converter for welding datasheet abstract
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Abstract: APT54GA60BD30 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through , technologies. Low APT54GA60BD30 gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise , td(on) tr td(off) tf APT54GA60BD30 TJ = 25°C unless otherwise specified Typ 350 f = , otherwise specified. MAXIMUM RATINGS Symbol Characteristic / Test Conditions APT54GA60BD30 Maximum , APT54GA60BD30 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage ... Original
datasheet

5 pages,
135.71 Kb

MIC4452 APT54GA60BD30 APT30GT60BR 600v 30a IGBT APT54GA60BD30 abstract
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Abstract: Gate-Emitter Charge Qgc SSOA td(on) tr td(off) tf APT54GA60B_SD30 TJ = 25°C unless otherwise , Performance Curves APT54GA60B_SD30 350 100 GE = 15V TJ= 25°C 75 TJ= 125°C TJ= 150°C 50 , ) td(ON), TURN-ON DELAY TIME (ns) APT54GA60B_SD30 200 21 19 VGE = 15V 18 17 16 15 160 , Typical Performance Curves APT54GA60B_SD30 10000 500 IC, COLLECTOR CURRENT (A) C , 052-6339 Rev B 2 - 2009 FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL APT54GA60B_SD30 10% Gate ... Original
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9 pages,
240.16 Kb

SD30 MIC4452 APT54GA60SD30 APT54GA60BD30 APT54GA60B APT54GA60BD30 abstract
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Abstract: Gate-Emitter Charge Qgc SSOA td(on) tr td(off) tf APT54GA60B_SD30 TJ = 25°C unless otherwise , Performance Curves APT54GA60B_SD30 350 100 GE = 15V TJ= 25°C 75 TJ= 125°C TJ= 150°C 50 , ) td(ON), TURN-ON DELAY TIME (ns) APT54GA60B_SD30 200 21 19 VGE = 15V 18 17 16 15 160 , Junction Temperature Typical Performance Curves APT54GA60B_SD30 10000 500 IC, COLLECTOR , Rev C ZJC, THERMAL IMPEDANCE (°C/W) 0.35 APT54GA60B_SD30 10% Gate Voltage 90% td(on ... Original
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9 pages,
236.78 Kb

SD30 MIC4452 APT54GA60SD30 APT54GA60BD30 APT54GA60B APT54GA60BD30 abstract
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Abstract: NEW IN THIS ISSUE! Digital Signal Processors, iCoupler®, iMEMS® and iSensorTM . . . . . 805, 2707, 2768-2769 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455 SiC MESFETs, SiC Diodes and XLamp® LEDs. . . . . . . . . . . Pages 578, 1353, 2839 3. 6E (Detailed Index - See Pages 3-24) Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 Active RF Product and Antennas . . . . . . . . . . . . 569-635 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . ... Original
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2896 pages,
143404.98 Kb

Seiko Epson Printer LQ 300 II bipolar transistor 2sc 4977 circuit diagram wireless spy camera OS 430 NR - 14d, VARISTOR 562j 1000V capacitor 600va ups circuit diagrams Burr-Brown IC ina118u free i ball 450 watt smps repairing sim 300 gsm module VR 0511 600va numeric ups circuit diagrams schematic diagram atx Power supply 500w datasheet abstract
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