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APT54GA60B Datasheet

Part Manufacturer Description PDF Type Ordering
APT54GA60B Microsemi Corporation Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 54;
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6 pages,
210.32 Kb

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APT54GA60BD30 Microsemi Corporation Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 54;
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9 pages,
236.77 Kb

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APT54GA60B

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Abstract: APT54GA60B 600V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT , high frequency. ® FEATURES APT54GA60B G C E Single die IGBT TYPICAL APPLICATIONS , (off) tf APT54GA60B TJ = 25°C unless otherwise specified Min Typ Capacitance VGE = 0V ... Original
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2 pages,
115.36 Kb

MIC4452 APT54GA60B APT54GA60B abstract
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Abstract: 534 466 16 21 146 145 891 838 APT54GA60B_S Min Typ 4130 350 45 158 26 52 A nC pF Parameter , Rev E 6 - 2011 Typical Performance Curves 100 V GE APT54GA60B_S 350 TJ= 25°C 300 IC , RG = 4.7 L = 100H APT54GA60B_S 160 VGE =15V,TJ=125°C 120 80 VGE =15V,TJ=25°C 40 , Curves 10000 Cies IC, COLLECTOR CURRENT (A) 100 C, CAPACITANCE (pF) 500 APT54GA60B_S 1000 10 , Pulse Duration 052-6328 Rev E 6 - 2011 APT54GA60B_S 10% Gate Voltage td(on) 90% TJ = 125°C ... Original
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6 pages,
223.35 Kb

igbt 16A APT54GA60B APT54GA60S APT54GA60B abstract
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Abstract: 534 466 16 21 146 145 891 838 APT54GA60B_S Min Typ 4130 350 45 158 26 52 A nC pF Parameter , Rev C 2 - 2009 Typical Performance Curves 100 V GE APT54GA60B_S 350 TJ= 25°C 300 IC , ) VCE = 400V TJ = 25°C, or 125°C RG = 4.7 L = 100H APT54GA60B_S 160 VGE =15V,TJ=125°C 120 , Curves 10000 Cies IC, COLLECTOR CURRENT (A) 100 C, CAPACITANCE (pF) 500 APT54GA60B_S 1000 10 , 2009 APT54GA60B_S 10% Gate Voltage td(on) 90% TJ = 125°C APT30DQ60 APT30DQ60 tr V CC IC V CE ... Original
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6 pages,
212.18 Kb

APT54GA60B APT54GA60S APT54GA60B abstract
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Abstract: (off) tf Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time APT54GA60B_S , Typical Performance Curves APT54GA60B_S 100 75 TJ= 125°C 50 25 0 2 4 6 8V , DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) APT54GA60B_S 200 21 19 VGE = 15V 18 17 , Junction Temperature Typical Performance Curves APT54GA60B_S 10000 500 IC, COLLECTOR , 052-6328 Rev D ZJC, THERMAL IMPEDANCE (°C/W) 0.35 APT54GA60B_S 10% Gate Voltage TJ = 125°C ... Original
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6 pages,
210.32 Kb

MIC4452 APT54GA60S APT54GA60B APT54GA60B abstract
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Abstract: APTGT50DH120TG APT54GA60B APT68GA60B APT68GA60B APT80GA60B APT80GA60B APT102GA60B2 APT102GA60B2 TO-220 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO-247 , 23 36 27 31 APT28GA60BD15 APT28GA60BD15 APT36GA60BD15 APT36GA60BD15 APT44GA60BD30 APT44GA60BD30 APT47GA60JD40 APT47GA60JD40 APT54GA60BD30 ... Original
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36 pages,
3034.92 Kb

3000w smps ARF1500 smps 2000W push pull converter 1000W output ARF476FL ARF463AG 3000w inverter mosfet circuit APT150GN60B2G 1000W solar inverter 1000W solar power inverter VRF2933 APT30GT60BRG 1000w inverter MOSFET datasheet abstract
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Abstract: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi's High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic contamination. These and other defects lead to early life failures, and screening for them is particularly important in large die devices. The stress tests that constitute Microsemi's high-reliabil ... Original
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45 pages,
2472.73 Kb

INFINEON TVS diode process Microsemi Catalog 3kw pfc 1500w tvs diode SMD smd parts nomenclature tutorial smps 3kw PLAD15KP PFC 1.5kw SMBx6.0A DO215AA 1.5ke series Fast Recovery Rectifiers mx gp 043 5kw smps full bridge S.M.P.S datasheet abstract
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Abstract: simens APT35DL120HJ APTES80DA120C3G APT36GA60B APT36GA60B APT44GA60B APT44GA60B APT54GA60B APT68GA60B APT68GA60B APT80GA60B APT80GA60B APT102GA60B2 APT102GA60B2 APT27GA90K APT27GA90K APT35GA90B APT35GA90B APT43GA90B APT43GA90B , 27 31 APT28GA60BD15 APT28GA60BD15 APT36GA60BD15 APT36GA60BD15 APT44GA60BD30 APT44GA60BD30 APT47GA60JD40 APT47GA60JD40 APT54GA60BD30 APT60GA60JD60 APT60GA60JD60 ... Original
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40 pages,
2007.54 Kb

dc-dc converter 380V push pull converter 1000W output smps 2500w APT80F60J APT47N60BC3G 45A, 1200v n-channel npt series igbt APT8014L2LLLG APT97N65 9 PIN TO249 APT30GF60JU2 IGBT triple modules 100A semiconductors cross reference datasheet abstract
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Abstract: APT54GA60BD30 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through , technologies. Low APT54GA60BD30 gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise , td(on) tr td(off) tf APT54GA60BD30 TJ = 25°C unless otherwise specified Typ 350 f = , otherwise specified. MAXIMUM RATINGS Symbol Characteristic / Test Conditions APT54GA60BD30 Maximum , APT54GA60BD30 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage ... Original
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5 pages,
135.71 Kb

MIC4452 APT54GA60BD30 APT30GT60BR 600v 30a IGBT APT54GA60BD30 abstract
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Abstract: NEW IN THIS ISSUE! Digital Signal Processors, iCoupler®, iMEMS® and iSensorTM . . . . . 805, 2707, 2768-2769 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455 SiC MESFETs, SiC Diodes and XLamp® LEDs. . . . . . . . . . . Pages 578, 1353, 2839 3. 6E (Detailed Index - See Pages 3-24) Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 Active RF Product and Antennas . . . . . . . . . . . . 569-635 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . ... Original
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2896 pages,
143404.98 Kb

circuit diagram wireless spy camera sim 300 gsm module VR 0511 equivalent amplifier for STA540 600va ups circuit diagrams transistor 13001 B 8d 600va numeric ups circuit diagrams schematic diagram atx Power supply 500w datasheet abstract
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Abstract: Gate-Emitter Charge Qgc SSOA td(on) tr td(off) tf APT54GA60B_SD30 TJ = 25°C unless otherwise , Performance Curves APT54GA60B_SD30 350 100 GE = 15V TJ= 25°C 75 TJ= 125°C TJ= 150°C 50 , ) td(ON), TURN-ON DELAY TIME (ns) APT54GA60B_SD30 200 21 19 VGE = 15V 18 17 16 15 160 , Junction Temperature Typical Performance Curves APT54GA60B_SD30 10000 500 IC, COLLECTOR , Rev C ZJC, THERMAL IMPEDANCE (°C/W) 0.35 APT54GA60B_SD30 10% Gate Voltage 90% td(on ... Original
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9 pages,
236.78 Kb

SD30 MIC4452 APT54GA60SD30 APT54GA60BD30 APT54GA60B APT54GA60BD30 abstract
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