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APT54GA60B Microsemi Corporation Insulated Gate Bipolar Transistor, 96A I(C), 600V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN
APT54GA60BD30 Microsemi Corporation Insulated Gate Bipolar Transistor, 96A I(C), 600V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN

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Part : APT54GA60BD30 Supplier : Microsemi Manufacturer : Richardson RFPD Stock : - Best Price : $5.24 Price Each : $5.45
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APT54GA60B Datasheet

Part Manufacturer Description PDF Type
APT54GA60B Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 54; Original
APT54GA60BD30 Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 54; Original

APT54GA60B

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: APT54GA60B 600V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT , high frequency. ® FEATURES APT54GA60B G C E Single die IGBT TYPICAL APPLICATIONS , (off) tf APT54GA60B TJ = 25°C unless otherwise specified Min Typ Capacitance VGE = 0V Microsemi
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MIC4452 JESD24-1
Abstract: 534 466 16 21 146 145 891 838 APT54GA60B_S Min Typ 4130 350 45 158 26 52 A nC pF Parameter , Rev C 2 - 2009 Typical Performance Curves 100 V GE APT54GA60B_S 350 TJ= 25°C 300 IC , ) VCE = 400V TJ = 25°C, or 125°C RG = 4.7 L = 100H APT54GA60B_S 160 VGE =15V,TJ=125°C 120 , Curves 10000 Cies IC, COLLECTOR CURRENT (A) 100 C, CAPACITANCE (pF) 500 APT54GA60B_S 1000 10 , 2009 APT54GA60B_S 10% Gate Voltage td(on) 90% TJ = 125°C APT30DQ60 tr V CC IC V CE Microsemi
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APT54GA60S
Abstract: 534 466 16 21 146 145 891 838 APT54GA60B_S Min Typ 4130 350 45 158 26 52 A nC pF Parameter , Rev E 6 - 2011 Typical Performance Curves 100 V GE APT54GA60B_S 350 TJ= 25°C 300 IC , °C RG = 4.7 L = 100H APT54GA60B_S 160 VGE =15V,TJ=125°C 120 80 VGE =15V,TJ=25°C 40 , Curves 10000 Cies IC, COLLECTOR CURRENT (A) 100 C, CAPACITANCE (pF) 500 APT54GA60B_S 1000 10 , Pulse Duration 052-6328 Rev E 6 - 2011 APT54GA60B_S 10% Gate Voltage td(on) 90% TJ = 125 Microsemi
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igbt 16A
Abstract: Area Turn-On Delay Time APT54GA60B_S TJ = 25° unless otherwise specifi ed C Test Conditions , APT54GA60B_S 100 GE = 15V TJ= 25°C TJ= 55°C 75 TJ= 125°C TJ= 150°C 50 25 10V , td(OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) APT54GA60B_S 200 21 19 , ) FIGURE 16, Switching Energy Losses vs Junction Temperature Typical Performance Curves APT54GA60B_S , APT54GA60B_S 10% Gate Voltage TJ = 125°C 90% td(on) APT30DQ60 tr V CE IC V CC 5 Microsemi
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Abstract: (off) tf Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time APT54GA60B_S , . Typical Performance Curves APT54GA60B_S 100 75 TJ= 125°C 50 25 0 2 4 6 8V , DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) APT54GA60B_S 200 21 19 VGE = 15V 18 17 , Junction Temperature Typical Performance Curves APT54GA60B_S 10000 500 IC, COLLECTOR , 052-6328 Rev D ZJC, THERMAL IMPEDANCE (°C/W) 0.35 APT54GA60B_S 10% Gate Voltage TJ = 125 Microsemi
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Abstract: APT36GA60B APT44GA60B APT54GA60B APT68GA60B APT80GA60B APT102GA60B2 APT27GA90K APT35GA90B APT43GA90B , 27 31 APT28GA60BD15 APT36GA60BD15 APT44GA60BD30 APT47GA60JD40 APT54GA60BD30 APT60GA60JD60 Microsemi
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SOT-227 lead frame 5kw smps full bridge S.M.P.S 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 PLAD15KP SMBx6.0A MIL-PRF-19500 DO-41 RT100KP
Abstract: APT54GA60B APT68GA60B APT80GA60B APT102GA60B2 TO-220 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO , 23 36 27 31 APT28GA60BD15 APT36GA60BD15 APT44GA60BD30 APT47GA60JD40 APT54GA60BD30 Microsemi
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SP6-P N-channel MOSFET 800v 50a to-247 DRF1400 SMPS 1000w IGBT REFERENCE DESIGN semiconductors cross reference APT10026L2FLLG 10F-A
Abstract: 19 23 T-MAX® (DU Diode) ISOTOP® (DU Diode) APT36GA60B APT44GA60B APT54GA60B , -247 or D3 TO-247 or D3 TO-247 or D3 APT36GA60BD15 APT44GA60BD30 APT54GA60BD30 APT60GA60JD60 Microsemi
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smps 1000W 600V 300A igbt dc to dc boost converter smps 500w half bridge DRF1300 1000w inverter MOSFET APT30GT60BRG
Abstract: Switching (125°C) VCC = 400V VGE = 15V IC = 32A RG = 4.74 TJ = +125°C 161 APT54GA60B_SD30 Min Typ 4130 , Rev D 6 - 2011 Typical Performance Curves 100 V GE APT54GA60B_SD30 350 TJ= 25°C 300 IC , APT54GA60B_SD30 160 VGE =15V,TJ=125°C 120 80 VGE =15V,TJ=25°C 40 VCE = 400V RG = 4.7 L = 100H , (A) 100 C, CAPACITANCE (pF) 500 APT54GA60B_SD30 1000 10 Coes 100 1 Cres 10 0 100 , D 6 - 2011 APT54GA60B_SD30 10% Gate Voltage td(on) 90% TJ = 125°C APT30DQ60 tr V CC Microsemi
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VRF2933FL VRF164FL ARF463AP1 Non - Isolated Buck, application MS5-001-14
Abstract: Gate-Emitter Charge Qgc SSOA td(on) tr td(off) tf APT54GA60B_SD30 TJ = 25°C unless otherwise , Performance Curves APT54GA60B_SD30 350 100 GE = 15V TJ= 25°C 75 TJ= 125°C TJ= 150°C 50 , ) td(ON), TURN-ON DELAY TIME (ns) APT54GA60B_SD30 200 21 19 VGE = 15V 18 17 16 15 160 , Typical Performance Curves APT54GA60B_SD30 10000 500 IC, COLLECTOR CURRENT (A) C , . 052-6339 Rev B 2 - 2009 FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL APT54GA60B_SD30 10% Gate Microsemi
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LE79Q2281 Dimming LED aplications Dimming LED Driver aplications GC4600 LED Driver aplications PIONEER mos car amplifier ic CATALOG
Abstract: APT54GA60BD30 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through , technologies. Low APT54GA60BD30 gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise , td(on) tr td(off) tf APT54GA60BD30 TJ = 25°C unless otherwise specified Typ 350 f = , otherwise specified. MAXIMUM RATINGS Symbol Characteristic / Test Conditions APT54GA60BD30 Maximum , APT54GA60BD30 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage DigiKey Electronics Catalog
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schematic diagram atx Power supply 500w pioneer PAL 012A 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu LN086WP38 LN11WP23 LN11CP23 LN11WP24 LN11WP34 LN11WP38
Abstract: APT54GA60B_SD30 TJ = 25° unless otherwise specifi ed C Min Typ Capacitance VGE = 0V, VCE = 25V , APT54GA60B_SD30 350 100 IC, COLLECTOR CURRENT (A) GE = 15V TJ= 25°C TJ= 55°C 75 15V 13V , DELAY TIME (ns) APT54GA60B_SD30 200 21 19 VGE = 15V 18 17 16 15 160 VGE =15V,TJ , Energy Losses vs Junction Temperature Typical Performance Curves APT54GA60B_SD30 10000 500 , Pulse Duration 052-6339 Rev D Z JC, THERMAL IMPEDANCE (°C/W) 0.35 APT54GA60B_SD30 10 Microsemi
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APT54GA60SD30
Abstract: Gate-Emitter Charge Qgc SSOA td(on) tr td(off) tf APT54GA60B_SD30 TJ = 25°C unless otherwise , Performance Curves APT54GA60B_SD30 350 100 GE = 15V TJ= 25°C 75 TJ= 125°C TJ= 150°C 50 , ) td(ON), TURN-ON DELAY TIME (ns) APT54GA60B_SD30 200 21 19 VGE = 15V 18 17 16 15 160 , Junction Temperature Typical Performance Curves APT54GA60B_SD30 10000 500 IC, COLLECTOR , Rev C ZJC, THERMAL IMPEDANCE (°C/W) 0.35 APT54GA60B_SD30 10% Gate Voltage 90% td(on Microsemi
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SD30