APT51M50J E145592 65E-7/VDS 51E-8/VDS 03E-10 MIC4452 - Datasheet Archive

 

500V, 51A, 0.075 Max N-Channel MOSFET S S Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. A

 

APT51M50J APT51M50J 500V, 51A, 0.075 Max N-Channel MOSFET S S Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. D G SO 2 T- 27 "UL Recognized" file # E145592 E145592 ISOTOP ® D APT51M50J APT51M50J Single die MOSFET G S TYPICAL APPLICATIONS FEATURES · Fast switching with low EMI/RFI · PFC and other boost converter · Low RDS(on) · Buck converter · Ultra low Crss for improved noise immunity · Two switch forward (asymmetrical bridge) · Low gate charge · Single switch forward · Avalanche energy rated · Flyback · RoHS compliant · Inverters Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 51 Continuous Drain Current @ TC = 100°C 32 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 1580 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 37 A 1 230 Thermal and Mechanical Characteristics Min Typ Max Unit W PD Total Power Dissipation @ TC = 25°C 480 RJC Junction to Case Thermal Resistance 0.26 RCS Case to Sink Thermal Resistance, Flat, Greased Surface TJ,TSTG Operating and Storage Junction Temperature Range VIsolation RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) °C/W 0.15 -55 150 °C V 2500 Torque 1.03 Package Weight oz 29.2 WT g 10 in·lbf 1.1 N·m Terminals and Mounting Screws. MicrosemiWebsite-http://www.microsemi.com Rev D 5-2009 Characteristic 050-8083 Symbol Static Characteristics TJ = 25°C unless otherwise specified Test Conditions Symbol Drain-Source Breakdown Voltage VBR(DSS)/TJ Breakdown Voltage Temperature Coefficient RDS(on) Drain-Source On Resistance VGS(th) 3 VDS = 500V Symbol Ciss 100 500 ±100 Min Test Conditions VDS = 50V, ID = 37A Input Capacitance Reverse Transfer Capacitance Coss 0.075 5 Unit V V/°C V mV/°C µA nA TJ = 25°C unless otherwise specified Forward Transconductance Crss 0.60 0.064 4 -10 VGS = ±30V Parameter gfs Max TJ = 125°C Gate-Source Leakage Current Dynamic Characteristics Typ TJ = 25°C VGS = 0V Zero Gate Voltage Drain Current IGSS 3 VGS = VDS, ID = 2.5mA Threshold Voltage Temperature Coefficient IDSS 500 VGS = 10V, ID = 37A Gate-Source Threshold Voltage VGS(th)/TJ Min VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA Parameter VBR(DSS) APT51M50J APT51M50J Output Capacitance 4 Effective Output Capacitance, Charge Related Co(er) 5 Max 55 11600 160 1250 VGS = 0V, VDS = 25V f = 1MHz Co(cr) Typ Effective Output Capacitance, Energy Related Unit S pF 725 VGS = 0V, VDS = 0V to 333V Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tr td(off) tf Current Rise Time Turn-Off Delay Time 365 290 65 130 45 55 120 39 VGS = 0 to 10V, ID = 37A, VDS = 250V Resistive Switching VDD = 333V, ID = 37A RG = 2.2 6 , VGG = 15V Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge dv/dt Peak Recovery dv/dt Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) Min Typ D Max Unit 51 A G 230 S ISD = 37A, TJ = 25°C, VGS = 0V ISD = 37A 3 diSD/dt = 100A/µs, TJ = 25°C ISD 37A, di/dt 1000A/µs, VDD = 333V, TJ = 125°C 1 695 17 V ns µC 8 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 2.31mH, RG = 25, IAS = 37A. 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 050-8083 Rev D 5-2009 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -1.65E-7/VDS 65E-7/VDS^2 + 5.51E-8/VDS 51E-8/VDS + 2.03E-10 03E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452 MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT51M50J APT51M50J 140 300 V GS = 10V T = 125°C J TJ = -55°C 200 TJ = 25°C 150 100 TJ = 150°C 50 ID, DRIAN CURRENT (A) 250 = 7,8 & 10V GS 100 6V 80 60 40 5V 20 4.5V TJ = 125°C 0 0 0 5 10 15 20 25 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 0 Figure 2, Output Characteristics 250 NORMALIZED TO VDS> ID(ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @